CN101535525B - 一种防止聚合物在cvd反应腔室的排气管线中形成的方法及装置 - Google Patents

一种防止聚合物在cvd反应腔室的排气管线中形成的方法及装置 Download PDF

Info

Publication number
CN101535525B
CN101535525B CN2007800159887A CN200780015988A CN101535525B CN 101535525 B CN101535525 B CN 101535525B CN 2007800159887 A CN2007800159887 A CN 2007800159887A CN 200780015988 A CN200780015988 A CN 200780015988A CN 101535525 B CN101535525 B CN 101535525B
Authority
CN
China
Prior art keywords
chamber
low frequency
gas
vent line
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800159887A
Other languages
English (en)
Chinese (zh)
Other versions
CN101535525A (zh
Inventor
D·K·卡尔森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101535525A publication Critical patent/CN101535525A/zh
Application granted granted Critical
Publication of CN101535525B publication Critical patent/CN101535525B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CN2007800159887A 2006-05-16 2007-05-15 一种防止聚合物在cvd反应腔室的排气管线中形成的方法及装置 Expired - Fee Related CN101535525B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/435,065 2006-05-16
US11/435,065 US20070267143A1 (en) 2006-05-16 2006-05-16 In situ cleaning of CVD system exhaust
PCT/US2007/068948 WO2007137035A2 (en) 2006-05-16 2007-05-15 In situ cleaning of cvd system exhaust

Publications (2)

Publication Number Publication Date
CN101535525A CN101535525A (zh) 2009-09-16
CN101535525B true CN101535525B (zh) 2012-12-19

Family

ID=38659696

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800159887A Expired - Fee Related CN101535525B (zh) 2006-05-16 2007-05-15 一种防止聚合物在cvd反应腔室的排气管线中形成的方法及装置

Country Status (7)

Country Link
US (2) US20070267143A1 (https=)
JP (1) JP5269770B2 (https=)
KR (1) KR101046969B1 (https=)
CN (1) CN101535525B (https=)
DE (1) DE112007001223T5 (https=)
TW (1) TWI388689B (https=)
WO (1) WO2007137035A2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009043848A1 (de) 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
KR101590661B1 (ko) * 2010-09-13 2016-02-01 도쿄엘렉트론가부시키가이샤 액처리 장치, 액처리 방법 및 기억 매체
KR101855217B1 (ko) 2010-12-30 2018-05-08 비코 인스트루먼츠 인코포레이티드 캐리어 연장부를 이용한 웨이퍼 처리
WO2012128783A1 (en) * 2011-03-22 2012-09-27 Applied Materials, Inc. Liner assembly for chemical vapor deposition chamber
CN102615068B (zh) * 2012-03-26 2015-05-20 中微半导体设备(上海)有限公司 Mocvd设备的清洁方法
US20130276702A1 (en) * 2012-04-24 2013-10-24 Applied Materials, Inc. Gas reclamation and abatement system for high volume epitaxial silicon deposition system
US9388493B2 (en) 2013-01-08 2016-07-12 Veeco Instruments Inc. Self-cleaning shutter for CVD reactor
CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
JP5605464B2 (ja) * 2013-06-25 2014-10-15 東京エレクトロン株式会社 成膜装置及びそのクリーニング方法
US11414759B2 (en) 2013-11-29 2022-08-16 Taiwan Semiconductor Manufacturing Co., Ltd Mechanisms for supplying process gas into wafer process apparatus
CN103938177B (zh) * 2014-05-07 2015-12-30 南昌黄绿照明有限公司 可用氯气在线清洗的非钎焊mocvd喷头
KR102372893B1 (ko) 2014-12-04 2022-03-10 삼성전자주식회사 발광 소자 제조용 화학 기상 증착 장치
JP6625891B2 (ja) 2016-02-10 2019-12-25 株式会社日立ハイテクノロジーズ 真空処理装置
TWI609988B (zh) * 2016-07-21 2018-01-01 台灣積體電路製造股份有限公司 製程設備及化學氣相沉積製程
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
JP7080140B2 (ja) * 2018-09-06 2022-06-03 東京エレクトロン株式会社 基板処理装置
CN111069192A (zh) * 2018-10-22 2020-04-28 北京北方华创微电子装备有限公司 原位清洗装置和半导体处理设备
KR102421233B1 (ko) 2020-02-03 2022-07-18 주식회사 제이엔케이 화학기상증착 장치
KR102368157B1 (ko) 2020-02-03 2022-03-02 주식회사 제이엔케이 화학기상증착 장치
KR20250155606A (ko) 2023-03-14 2025-10-30 어플라이드 머티어리얼스, 인코포레이티드 개선된 프로세스 챔버 세정

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042654A (en) * 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines
EP1145759A1 (en) * 1995-12-27 2001-10-17 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4263873A (en) * 1979-03-19 1981-04-28 George Christianson Animal litter and method of preparation
US4263872A (en) * 1980-01-31 1981-04-28 Rca Corporation Radiation heated reactor for chemical vapor deposition on substrates
JPS60114570A (ja) * 1983-11-25 1985-06-21 Canon Inc プラズマｃｖｄ装置の排気系
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US5451378A (en) * 1991-02-21 1995-09-19 The United States Of America As Represented By The Secretary Of The Navy Photon controlled decomposition of nonhydrolyzable ambients
FR2686347B1 (fr) * 1992-01-22 1994-10-07 Lorraine Carbone Procede de pyrolyse d'effluents fluides et dispositif correspondant.
US5916369A (en) 1995-06-07 1999-06-29 Applied Materials, Inc. Gas inlets for wafer processing chamber
US5454903A (en) * 1993-10-29 1995-10-03 Applied Materials, Inc. Plasma cleaning of a CVD or etch reactor using helium for plasma stabilization
RU95106478A (ru) * 1994-04-29 1997-01-20 Моторола Устройство и способ для разложения химических соединений
US5855677A (en) * 1994-09-30 1999-01-05 Applied Materials, Inc. Method and apparatus for controlling the temperature of reaction chamber walls
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6045618A (en) * 1995-09-25 2000-04-04 Applied Materials, Inc. Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment
US6194628B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US5963833A (en) * 1996-07-03 1999-10-05 Micron Technology, Inc. Method for cleaning semiconductor wafers and
US5788778A (en) * 1996-09-16 1998-08-04 Applied Komatsu Technology, Inc. Deposition chamber cleaning technique using a high power remote excitation source
US5827370A (en) * 1997-01-13 1998-10-27 Mks Instruments, Inc. Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace
US5743581A (en) * 1997-03-18 1998-04-28 Applied Materials Incorporated Semiconductor process chamber exhaust port quartz removal tool
US6153260A (en) * 1997-04-11 2000-11-28 Applied Materials, Inc. Method for heating exhaust gas in a substrate reactor
US6815633B1 (en) * 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
JP3500050B2 (ja) * 1997-09-08 2004-02-23 東京エレクトロン株式会社 不純物除去装置、膜形成方法及び膜形成システム
US6098637A (en) * 1998-03-03 2000-08-08 Applied Materials, Inc. In situ cleaning of the surface inside a vacuum processing chamber
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
US6368567B2 (en) * 1998-10-07 2002-04-09 Applied Materials, Inc. Point-of-use exhaust by-product reactor
JP3709432B2 (ja) * 1999-04-30 2005-10-26 アプライド マテリアルズ インコーポレイテッド 排ガス処理装置及び基板処理装置
KR100613674B1 (ko) * 1999-05-14 2006-08-21 동경 엘렉트론 주식회사 웨이퍼 처리 장치 및 처리 방법
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
US6572924B1 (en) * 1999-11-18 2003-06-03 Asm America, Inc. Exhaust system for vapor deposition reactor and method of using the same
US6596123B1 (en) * 2000-01-28 2003-07-22 Applied Materials, Inc. Method and apparatus for cleaning a semiconductor wafer processing system
KR100755241B1 (ko) * 2000-05-29 2007-09-04 가부시키가이샤 아도테쿠 프라즈마 테쿠노로지 피처리물처리장치 및 그것을 사용한 플라즈마설비
WO2002000962A1 (en) * 2000-06-28 2002-01-03 Mks Instruments, Inc. System and method for in-situ cleaning of process monitor of semi-conductor wafer fabricator
US6843258B2 (en) * 2000-12-19 2005-01-18 Applied Materials, Inc. On-site cleaning gas generation for process chamber cleaning
US7084832B2 (en) * 2001-10-09 2006-08-01 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US6902629B2 (en) * 2002-04-12 2005-06-07 Applied Materials, Inc. Method for cleaning a process chamber
US6923189B2 (en) * 2003-01-16 2005-08-02 Applied Materials, Inc. Cleaning of CVD chambers using remote source with cxfyoz based chemistry
KR100505670B1 (ko) * 2003-02-05 2005-08-03 삼성전자주식회사 부산물 제거용 고온 유체 공급 장치를 구비한 반도체 소자제조 장치
US6872909B2 (en) * 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
US7969096B2 (en) * 2006-12-15 2011-06-28 Mks Instruments, Inc. Inductively-coupled plasma source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1145759A1 (en) * 1995-12-27 2001-10-17 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6042654A (en) * 1998-01-13 2000-03-28 Applied Materials, Inc. Method of cleaning CVD cold-wall chamber and exhaust lines

Also Published As

Publication number Publication date
US20090044699A1 (en) 2009-02-19
TW200804619A (en) 2008-01-16
WO2007137035A2 (en) 2007-11-29
US20070267143A1 (en) 2007-11-22
KR20090016476A (ko) 2009-02-13
WO2007137035A3 (en) 2008-12-11
JP5269770B2 (ja) 2013-08-21
DE112007001223T5 (de) 2009-04-23
TWI388689B (zh) 2013-03-11
US8343317B2 (en) 2013-01-01
KR101046969B1 (ko) 2011-07-06
JP2009537993A (ja) 2009-10-29
CN101535525A (zh) 2009-09-16

Similar Documents

Publication Publication Date Title
CN101535525B (zh) 一种防止聚合物在cvd反应腔室的排气管线中形成的方法及装置
JP3897382B2 (ja) Ｃｖｄシステムの真空ラインのクリーニング方法及び装置
KR100495783B1 (ko) 기판처리장치의인-시튜진공라인을세척하기위한평행판장치
EP0839929B1 (en) Method and apparatus for minimizing deposition in an exhaust line
KR100271694B1 (ko) 기판 처리 장치로부터의 과플루오르 화합물 가스 방출을 감소시키기 위한 방법 및 장치
KR100767762B1 (ko) 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
KR100696030B1 (ko) 실리콘-산소-탄소 증착 프로세스의 기판 처리 챔버 배출 라인으로부터 잔류물을 제거하기 위한 방법
CN106575609A (zh) 调节远程等离子源以获得具有可重复蚀刻与沉积率的增进性能
JPH1171680A (ja) 基板処理装置と共に用いるための改良型遠隔マイクロ波プラズマソース用装置
TW536739B (en) Apparatus for exhaust white powder elimination in substrate processing

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: American California

Applicant after: Applied Materials Inc.

Address before: American California

Applicant before: Applied Materials Inc.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121219

Termination date: 20180515

CF01 Termination of patent right due to non-payment of annual fee