DE112007000520T5 - Halbleiterscheibenbearbeitungsverfahren - Google Patents

Halbleiterscheibenbearbeitungsverfahren Download PDF

Info

Publication number
DE112007000520T5
DE112007000520T5 DE112007000520T DE112007000520T DE112007000520T5 DE 112007000520 T5 DE112007000520 T5 DE 112007000520T5 DE 112007000520 T DE112007000520 T DE 112007000520T DE 112007000520 T DE112007000520 T DE 112007000520T DE 112007000520 T5 DE112007000520 T5 DE 112007000520T5
Authority
DE
Germany
Prior art keywords
semiconductor wafer
wafer
thickness
processing
dicing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112007000520T
Other languages
German (de)
English (en)
Inventor
Takayuki Mitaka-shi Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Seimitsu Co Ltd
Original Assignee
Tokyo Seimitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Publication of DE112007000520T5 publication Critical patent/DE112007000520T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE112007000520T 2006-03-03 2007-02-16 Halbleiterscheibenbearbeitungsverfahren Withdrawn DE112007000520T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006-058330 2006-03-03
JP2006058330A JP2007235068A (ja) 2006-03-03 2006-03-03 ウェーハ加工方法
PCT/JP2007/052825 WO2007099787A1 (ja) 2006-03-03 2007-02-16 ウェーハ加工方法

Publications (1)

Publication Number Publication Date
DE112007000520T5 true DE112007000520T5 (de) 2009-01-15

Family

ID=38458900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112007000520T Withdrawn DE112007000520T5 (de) 2006-03-03 2007-02-16 Halbleiterscheibenbearbeitungsverfahren

Country Status (5)

Country Link
US (1) US20090011571A1 (enExample)
JP (1) JP2007235068A (enExample)
KR (1) KR20080098633A (enExample)
DE (1) DE112007000520T5 (enExample)
WO (1) WO2007099787A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP2011171382A (ja) * 2010-02-16 2011-09-01 Disco Corp 分割方法
JP2013008831A (ja) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014209523A (ja) * 2013-04-16 2014-11-06 株式会社ディスコ ウェーハの加工方法
JP2014212282A (ja) * 2013-04-22 2014-11-13 株式会社ディスコ ウェーハの加工方法
CN105742329A (zh) * 2016-03-07 2016-07-06 京东方科技集团股份有限公司 显示面板及其制造方法和显示装置
JP6717758B2 (ja) 2017-01-10 2020-07-01 ファナック株式会社 複合加工方法及び複合加工プログラム
CN111052341A (zh) * 2017-08-28 2020-04-21 东京毅力科创株式会社 基板处理系统和基板处理方法
JP7157301B2 (ja) * 2017-11-06 2022-10-20 株式会社東京精密 ウェーハの加工方法
JP2019012850A (ja) * 2018-10-03 2019-01-24 株式会社東京精密 ウェハ加工方法及びウェハ加工システム
JP2020088323A (ja) * 2018-11-30 2020-06-04 株式会社ディスコ ウェーハ製造装置
JP2019169719A (ja) * 2019-04-25 2019-10-03 株式会社東京精密 レーザ加工システム
JP2019192937A (ja) * 2019-07-05 2019-10-31 株式会社東京精密 ウェーハ加工システム及びウェーハ加工方法
WO2023209897A1 (ja) * 2022-04-27 2023-11-02 ヤマハ発動機株式会社 ウエハ加工装置、半導体チップの製造方法および半導体チップ
WO2023209871A1 (ja) * 2022-04-27 2023-11-02 ヤマハ発動機株式会社 ウエハ加工装置、半導体チップの製造方法および半導体チップ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002192367A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2002192368A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工装置
JP2002192371A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002192369A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002192370A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2002205180A (ja) 2000-09-13 2002-07-23 Hamamatsu Photonics Kk レーザ加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030064579A1 (en) * 2001-09-27 2003-04-03 Masafumi Miyakawa Surface protecting adhesive film for semiconductor wafer and protecting method for semiconductor wafer using said adhesive film
EP3252806B1 (en) * 2002-03-12 2019-10-09 Hamamatsu Photonics K.K. Substrate dividing method
JP4509573B2 (ja) * 2002-03-12 2010-07-21 浜松ホトニクス株式会社 半導体基板、半導体チップ、及び半導体デバイスの製造方法
KR100486290B1 (ko) * 2002-12-23 2005-04-29 삼성전자주식회사 반도체 패키지 조립방법 및 반도체 패키지 공정의보호테이프 제거장치
JP2004241443A (ja) * 2003-02-03 2004-08-26 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4494728B2 (ja) * 2003-05-26 2010-06-30 株式会社ディスコ 非金属基板の分割方法
JP2005302982A (ja) * 2004-04-12 2005-10-27 Nitto Denko Corp 半導体チップの製造方法
JPWO2006008824A1 (ja) * 2004-07-16 2008-05-01 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002192367A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2002192368A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工装置
JP2002192371A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002192369A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP2002192370A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法
JP2002205180A (ja) 2000-09-13 2002-07-23 Hamamatsu Photonics Kk レーザ加工方法

Also Published As

Publication number Publication date
WO2007099787A1 (ja) 2007-09-07
KR20080098633A (ko) 2008-11-11
US20090011571A1 (en) 2009-01-08
JP2007235068A (ja) 2007-09-13

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Legal Events

Date Code Title Description
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20110901