KR20080098633A - 웨이퍼 가공방법 - Google Patents

웨이퍼 가공방법 Download PDF

Info

Publication number
KR20080098633A
KR20080098633A KR1020087021346A KR20087021346A KR20080098633A KR 20080098633 A KR20080098633 A KR 20080098633A KR 1020087021346 A KR1020087021346 A KR 1020087021346A KR 20087021346 A KR20087021346 A KR 20087021346A KR 20080098633 A KR20080098633 A KR 20080098633A
Authority
KR
South Korea
Prior art keywords
wafer
grinding
tape
back surface
machining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087021346A
Other languages
English (en)
Korean (ko)
Inventor
다까유끼 가네꼬
Original Assignee
가부시키가이샤 토쿄 세이미쯔
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 토쿄 세이미쯔 filed Critical 가부시키가이샤 토쿄 세이미쯔
Publication of KR20080098633A publication Critical patent/KR20080098633A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020087021346A 2006-03-03 2007-02-16 웨이퍼 가공방법 Ceased KR20080098633A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006058330A JP2007235068A (ja) 2006-03-03 2006-03-03 ウェーハ加工方法
JPJP-P-2006-00058330 2006-03-03

Publications (1)

Publication Number Publication Date
KR20080098633A true KR20080098633A (ko) 2008-11-11

Family

ID=38458900

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087021346A Ceased KR20080098633A (ko) 2006-03-03 2007-02-16 웨이퍼 가공방법

Country Status (5)

Country Link
US (1) US20090011571A1 (enExample)
JP (1) JP2007235068A (enExample)
KR (1) KR20080098633A (enExample)
DE (1) DE112007000520T5 (enExample)
WO (1) WO2007099787A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP2011171382A (ja) * 2010-02-16 2011-09-01 Disco Corp 分割方法
JP2013008831A (ja) * 2011-06-24 2013-01-10 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2014209523A (ja) * 2013-04-16 2014-11-06 株式会社ディスコ ウェーハの加工方法
JP2014212282A (ja) * 2013-04-22 2014-11-13 株式会社ディスコ ウェーハの加工方法
CN105742329A (zh) * 2016-03-07 2016-07-06 京东方科技集团股份有限公司 显示面板及其制造方法和显示装置
JP6717758B2 (ja) 2017-01-10 2020-07-01 ファナック株式会社 複合加工方法及び複合加工プログラム
CN111052341A (zh) * 2017-08-28 2020-04-21 东京毅力科创株式会社 基板处理系统和基板处理方法
JP7157301B2 (ja) * 2017-11-06 2022-10-20 株式会社東京精密 ウェーハの加工方法
JP2019012850A (ja) * 2018-10-03 2019-01-24 株式会社東京精密 ウェハ加工方法及びウェハ加工システム
JP2020088323A (ja) * 2018-11-30 2020-06-04 株式会社ディスコ ウェーハ製造装置
JP2019169719A (ja) * 2019-04-25 2019-10-03 株式会社東京精密 レーザ加工システム
JP2019192937A (ja) * 2019-07-05 2019-10-31 株式会社東京精密 ウェーハ加工システム及びウェーハ加工方法
WO2023209897A1 (ja) * 2022-04-27 2023-11-02 ヤマハ発動機株式会社 ウエハ加工装置、半導体チップの製造方法および半導体チップ
WO2023209871A1 (ja) * 2022-04-27 2023-11-02 ヤマハ発動機株式会社 ウエハ加工装置、半導体チップの製造方法および半導体チップ

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
JP2002192371A (ja) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP3722731B2 (ja) 2000-09-13 2005-11-30 浜松ホトニクス株式会社 レーザ加工方法
JP4762458B2 (ja) 2000-09-13 2011-08-31 浜松ホトニクス株式会社 レーザ加工装置
JP3626442B2 (ja) 2000-09-13 2005-03-09 浜松ホトニクス株式会社 レーザ加工方法
US20030064579A1 (en) * 2001-09-27 2003-04-03 Masafumi Miyakawa Surface protecting adhesive film for semiconductor wafer and protecting method for semiconductor wafer using said adhesive film
EP3252806B1 (en) * 2002-03-12 2019-10-09 Hamamatsu Photonics K.K. Substrate dividing method
JP4509573B2 (ja) * 2002-03-12 2010-07-21 浜松ホトニクス株式会社 半導体基板、半導体チップ、及び半導体デバイスの製造方法
KR100486290B1 (ko) * 2002-12-23 2005-04-29 삼성전자주식회사 반도체 패키지 조립방법 및 반도체 패키지 공정의보호테이프 제거장치
JP2004241443A (ja) * 2003-02-03 2004-08-26 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4494728B2 (ja) * 2003-05-26 2010-06-30 株式会社ディスコ 非金属基板の分割方法
JP2005302982A (ja) * 2004-04-12 2005-10-27 Nitto Denko Corp 半導体チップの製造方法
JPWO2006008824A1 (ja) * 2004-07-16 2008-05-01 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
DE112007000520T5 (de) 2009-01-15
WO2007099787A1 (ja) 2007-09-07
US20090011571A1 (en) 2009-01-08
JP2007235068A (ja) 2007-09-13

Similar Documents

Publication Publication Date Title
KR20080103982A (ko) 웨이퍼 가공방법
KR20080098633A (ko) 웨이퍼 가공방법
WO2007091670A1 (ja) ウェーハ加工装置及び方法
US6863590B2 (en) Wafer planarization apparatus
CN109801834B (zh) 晶片的生成方法和晶片生成装置
US7462094B2 (en) Wafer grinding method
CN109216159B (zh) 晶片生成装置
KR102482218B1 (ko) 웨이퍼 생성 장치
JP5604186B2 (ja) 加工装置
JP7483069B2 (ja) 基板搬送システム
JP2010023119A (ja) 半導体基板の平坦化装置および平坦化方法
KR20130018552A (ko) 웨이퍼 가공 방법
JP4895671B2 (ja) 加工装置
JP4505789B2 (ja) チップ製造方法
JP2008155292A (ja) 基板の加工方法および加工装置
US11673229B2 (en) Processing apparatus
CN107403738B (zh) 去疵性的评价方法
KR102520523B1 (ko) 웨이퍼의 가공 방법
JP6887016B2 (ja) ゲッタリング層形成装置、ゲッタリング層形成方法及びコンピュータ記憶媒体
JP2018093042A (ja) ウエーハ加工装置及びウエーハの加工方法
JP4850666B2 (ja) ウエーハの加工装置
JP6979608B2 (ja) 研削装置及び研削方法
JP2010023163A (ja) 加工装置
JP2024122174A (ja) 保持テーブルの洗浄方法及び加工装置
JP2022028781A (ja) 亀裂進展装置及び亀裂進展方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000