DE1113033B - Verfahren zur Begrenzung der Legierungs-flaeche von in einen Halbleiterkristall einzulegierendem Elektrodenmaterial - Google Patents
Verfahren zur Begrenzung der Legierungs-flaeche von in einen Halbleiterkristall einzulegierendem ElektrodenmaterialInfo
- Publication number
- DE1113033B DE1113033B DEN18166A DEN0018166A DE1113033B DE 1113033 B DE1113033 B DE 1113033B DE N18166 A DEN18166 A DE N18166A DE N0018166 A DEN0018166 A DE N0018166A DE 1113033 B DE1113033 B DE 1113033B
- Authority
- DE
- Germany
- Prior art keywords
- crystal
- electrode material
- alloyed
- shows
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 51
- 238000000034 method Methods 0.000 title claims description 19
- 239000007772 electrode material Substances 0.000 title claims description 15
- 239000000956 alloy Substances 0.000 title claims description 9
- 229910045601 alloy Inorganic materials 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000005275 alloying Methods 0.000 claims description 9
- 238000007788 roughening Methods 0.000 claims description 5
- 238000005488 sandblasting Methods 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 description 15
- 229910052738 indium Inorganic materials 0.000 description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 14
- 239000011324 bead Substances 0.000 description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL238257 | 1959-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1113033B true DE1113033B (de) | 1961-08-24 |
| DE1113033C2 DE1113033C2 (uk) | 1962-03-08 |
Family
ID=19751673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN18166A Granted DE1113033B (de) | 1959-04-17 | 1960-04-13 | Verfahren zur Begrenzung der Legierungs-flaeche von in einen Halbleiterkristall einzulegierendem Elektrodenmaterial |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH385350A (uk) |
| DE (1) | DE1113033B (uk) |
| FR (1) | FR1267807A (uk) |
| GB (1) | GB925743A (uk) |
| NL (1) | NL238257A (uk) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
-
0
- NL NL238257D patent/NL238257A/xx unknown
-
1960
- 1960-04-13 DE DEN18166A patent/DE1113033B/de active Granted
- 1960-04-14 GB GB1339560A patent/GB925743A/en not_active Expired
- 1960-04-14 CH CH429460A patent/CH385350A/de unknown
- 1960-04-15 FR FR824581A patent/FR1267807A/fr not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
Also Published As
| Publication number | Publication date |
|---|---|
| CH385350A (de) | 1964-12-15 |
| NL238257A (uk) | |
| GB925743A (en) | 1963-05-08 |
| FR1267807A (fr) | 1961-07-28 |
| DE1113033C2 (uk) | 1962-03-08 |
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