DE1085969B - Verfahren und Vorrichtung zur Oberflaechenbehandlung von Halbleiterbauelementen mit mehreren Elektroden und mindestens einem pn-UEbergang - Google Patents
Verfahren und Vorrichtung zur Oberflaechenbehandlung von Halbleiterbauelementen mit mehreren Elektroden und mindestens einem pn-UEbergangInfo
- Publication number
- DE1085969B DE1085969B DES59948A DES0059948A DE1085969B DE 1085969 B DE1085969 B DE 1085969B DE S59948 A DES59948 A DE S59948A DE S0059948 A DES0059948 A DE S0059948A DE 1085969 B DE1085969 B DE 1085969B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor component
- steam
- stream
- condensate
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 14
- 238000004381 surface treatment Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 5
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000654 additive Substances 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 239000002585 base Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thermistors And Varistors (AREA)
- Weting (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL241711D NL241711A (en, 2012) | 1958-09-23 | ||
| DES59948A DE1085969B (de) | 1958-09-23 | 1958-09-23 | Verfahren und Vorrichtung zur Oberflaechenbehandlung von Halbleiterbauelementen mit mehreren Elektroden und mindestens einem pn-UEbergang |
| FR802975A FR1233331A (fr) | 1958-09-23 | 1959-08-17 | Procédé de traitement superficiel d'éléments semi-conducteurs possédant plusieurs électrodes et ayan au moins une jonction p-n |
| GB2818859A GB861624A (en) | 1958-09-23 | 1959-08-18 | Improvements in or relating to the surface treatment of semi-conductor elements |
| CH7829559A CH371188A (de) | 1958-09-23 | 1959-09-16 | Verfahren zur Oberflächenbehandlung von Halbleiterelementen mit mehreren Elektroden und mindestens einem p-n-Übergang |
| BE582909A BE582909A (fr) | 1958-09-23 | 1959-09-22 | Procédé de traitement superficiel d'éléments semi-conducteurs possédant plusieurs électrodes et ayant au moins une jonction p-n |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES59948A DE1085969B (de) | 1958-09-23 | 1958-09-23 | Verfahren und Vorrichtung zur Oberflaechenbehandlung von Halbleiterbauelementen mit mehreren Elektroden und mindestens einem pn-UEbergang |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1085969B true DE1085969B (de) | 1960-07-28 |
Family
ID=7493712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES59948A Pending DE1085969B (de) | 1958-09-23 | 1958-09-23 | Verfahren und Vorrichtung zur Oberflaechenbehandlung von Halbleiterbauelementen mit mehreren Elektroden und mindestens einem pn-UEbergang |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE582909A (en, 2012) |
| CH (1) | CH371188A (en, 2012) |
| DE (1) | DE1085969B (en, 2012) |
| FR (1) | FR1233331A (en, 2012) |
| GB (1) | GB861624A (en, 2012) |
| NL (1) | NL241711A (en, 2012) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1114786A (fr) * | 1954-03-05 | 1956-04-17 | Western Electric Co | Fabrication de corps semi-conducteurs |
| FR1129942A (fr) * | 1954-04-01 | 1957-01-29 | Philips Nv | Procédé de fabrication de corps semi-conducteurs à partir de substances pouvant être chauffées sans se décomposer |
| DE1036394B (de) | 1954-05-27 | 1958-08-14 | Western Electric Co | Verfahren zur Erzeugung einer pn-Verbindung in einem p-Typ-Koerper aus Silizium |
-
0
- NL NL241711D patent/NL241711A/xx unknown
-
1958
- 1958-09-23 DE DES59948A patent/DE1085969B/de active Pending
-
1959
- 1959-08-17 FR FR802975A patent/FR1233331A/fr not_active Expired
- 1959-08-18 GB GB2818859A patent/GB861624A/en not_active Expired
- 1959-09-16 CH CH7829559A patent/CH371188A/de unknown
- 1959-09-22 BE BE582909A patent/BE582909A/fr unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1114786A (fr) * | 1954-03-05 | 1956-04-17 | Western Electric Co | Fabrication de corps semi-conducteurs |
| FR1129942A (fr) * | 1954-04-01 | 1957-01-29 | Philips Nv | Procédé de fabrication de corps semi-conducteurs à partir de substances pouvant être chauffées sans se décomposer |
| DE1036394B (de) | 1954-05-27 | 1958-08-14 | Western Electric Co | Verfahren zur Erzeugung einer pn-Verbindung in einem p-Typ-Koerper aus Silizium |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1233331A (fr) | 1960-10-12 |
| NL241711A (en, 2012) | |
| GB861624A (en) | 1961-02-22 |
| CH371188A (de) | 1963-08-15 |
| BE582909A (fr) | 1960-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69505048T2 (de) | Herstellungsmethode für Halbleiterelemente in einer aktiven Schicht auf einem Trägersubstrat | |
| DE2142146A1 (de) | Halbleiteranordnung und Verfahren zur Herstellung einer derartigen Anordnung | |
| DE69528515T2 (de) | Herstellungsmethode eines oberflächen-montierbaren bauteils und dieser selbst | |
| DE1927646B2 (de) | Verfahren zur herstellung einer halbleiteranordnung | |
| DE1018555B (de) | Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere einer Kristalldiode oder eines Transistors, deren halbleitender Koerper mit wenigstens einer aufgeschmolzenen Elektrode versehen ist | |
| DE1052572B (de) | Elektrodensystem, das einen halbleitenden Einkristall mit wenigstens zwei Teilen verschiedener Leitungsart enthaelt, z. B. Kristalldiode oder Transistor | |
| DE2332822B2 (de) | Verfahren zum Herstellen von diffundierten, kontaktierten und oberflächenpassivierten Halbleiterbauelementen aus Halbleiterscheiben aus Silizium | |
| DE112015006571T5 (de) | Verfahren zum herstellen einer halbleiteranordnung | |
| DE2162445B2 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE1194500B (de) | Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen | |
| DE1170555B (de) | Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps | |
| DE1278023B (de) | Halbleiterschaltelement und Verfahren zu seiner Herstellung | |
| AT211873B (de) | Verfahren zur Oberflächenbehandlung von Halbleiterelementen mit mehreren Elektroden und mindestens einem p-n-Übergang | |
| DE1085969B (de) | Verfahren und Vorrichtung zur Oberflaechenbehandlung von Halbleiterbauelementen mit mehreren Elektroden und mindestens einem pn-UEbergang | |
| DE1282195B (de) | Halbleiterbauelement mit gesinterter Traeger-Zwischenplatte | |
| DE1182750B (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE2207012C2 (de) | Verfahren zur Kontaktierung von Halbleiterbauelementen | |
| EP0693772B1 (de) | Verfahren zum Kontaktieren von SIPOS passivierten Halbleiteranordnungen | |
| DE1964546A1 (de) | Verfahren zur Herstellung von Halbleitervorrichtungen | |
| DE1137140B (de) | Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung | |
| DE1564707C3 (de) | Verfahren zum Herstellen eines mit pn-Übergang versehenen Halbleiterbauelements | |
| DE1090326B (de) | Verfahren zur Herstellung eines Transistors mit drei Zonen aus verschiedenen Halbleitermaterialien abwechselnden Leitungstyps | |
| DE1564146A1 (de) | Halbleiterbauelement und Verfahren zum Herstellen | |
| DE3032461C2 (en, 2012) | ||
| DE1285625B (de) | Verfahren zur Herstellung eines Halbleiterbauelements |