DE10357919A1 - Abbildungs-Anordnung und Verfahren zu deren Herstellung - Google Patents
Abbildungs-Anordnung und Verfahren zu deren Herstellung Download PDFInfo
- Publication number
- DE10357919A1 DE10357919A1 DE10357919A DE10357919A DE10357919A1 DE 10357919 A1 DE10357919 A1 DE 10357919A1 DE 10357919 A DE10357919 A DE 10357919A DE 10357919 A DE10357919 A DE 10357919A DE 10357919 A1 DE10357919 A1 DE 10357919A1
- Authority
- DE
- Germany
- Prior art keywords
- light blocking
- blocking element
- dielectric barrier
- barrier
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 238000000034 method Methods 0.000 title description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 69
- 230000000903 blocking effect Effects 0.000 claims abstract description 69
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 230000005855 radiation Effects 0.000 description 18
- 238000000059 patterning Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000002059 diagnostic imaging Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002594 fluoroscopy Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005787 opaque polymer Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8057—Optical shielding
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/322117 | 2002-12-17 | ||
| US10/322,117 US7307301B2 (en) | 2002-12-17 | 2002-12-17 | Imaging array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10357919A1 true DE10357919A1 (de) | 2004-07-29 |
Family
ID=32393011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10357919A Ceased DE10357919A1 (de) | 2002-12-17 | 2003-12-11 | Abbildungs-Anordnung und Verfahren zu deren Herstellung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7307301B2 (https=) |
| JP (1) | JP2004200692A (https=) |
| DE (1) | DE10357919A1 (https=) |
| FR (1) | FR2848728B1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8053777B2 (en) * | 2005-03-31 | 2011-11-08 | General Electric Company | Thin film transistors for imaging system and method of making the same |
| JP5280671B2 (ja) * | 2006-12-20 | 2013-09-04 | 富士フイルム株式会社 | 画像検出器および放射線検出システム |
| TWI424574B (zh) * | 2009-07-28 | 2014-01-21 | Prime View Int Co Ltd | 數位ｘ光探測面板及其製作方法 |
| US8633486B2 (en) | 2010-07-09 | 2014-01-21 | Casio Computer Co., Ltd. | Transistor structure and light emitting apparatus |
| TW201218367A (en) * | 2010-09-14 | 2012-05-01 | Casio Computer Co Ltd | Transistor structure, manufacturing method of transistor structure, and light emitting apparatus |
| US9052399B2 (en) | 2011-12-30 | 2015-06-09 | Saint-Gobain Ceramics & Plastics, Inc. | Scintillator pixel array with reduced cross talk |
| CN103247640B (zh) * | 2012-02-13 | 2016-04-06 | 群康科技(深圳)有限公司 | 主动矩阵式影像感测面板及装置 |
| CN103972249B (zh) * | 2013-02-05 | 2017-04-12 | 群创光电股份有限公司 | 主动矩阵式影像感测面板及装置 |
| KR101442962B1 (ko) * | 2013-03-04 | 2014-09-23 | 주식회사 동부하이텍 | 이미지 센서 |
| CN104078421B (zh) * | 2013-03-29 | 2018-01-30 | 北京京东方光电科技有限公司 | 非晶硅光电二极管基板的制造方法、基板及半导体装置 |
| TWI538177B (zh) * | 2014-04-15 | 2016-06-11 | 友達光電股份有限公司 | 光感應裝置及其製作方法 |
| CN107894671B (zh) * | 2017-11-03 | 2021-01-08 | 惠科股份有限公司 | 一种阵列基板和阵列基板的制造方法 |
| KR102517730B1 (ko) * | 2017-12-27 | 2023-04-03 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기 패널과 이를 포함하는 엑스레이 시스템 |
| CN108376688A (zh) * | 2018-04-28 | 2018-08-07 | 京东方科技集团股份有限公司 | 一种感光组件及其制备方法、阵列基板、显示装置 |
| CN120111980A (zh) * | 2025-02-26 | 2025-06-06 | 京东方科技集团股份有限公司 | 一种探测基板、制备方法和探测装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3142327B2 (ja) | 1991-02-05 | 2001-03-07 | 株式会社東芝 | 固体撮像装置及びその製造方法 |
| JPH04321273A (ja) * | 1991-04-19 | 1992-11-11 | Fuji Xerox Co Ltd | イメージセンサ |
| US5435608A (en) | 1994-06-17 | 1995-07-25 | General Electric Company | Radiation imager with common passivation dielectric for gate electrode and photosensor |
| US5517031A (en) | 1994-06-21 | 1996-05-14 | General Electric Company | Solid state imager with opaque layer |
| JPH0837288A (ja) * | 1994-07-22 | 1996-02-06 | Fuji Xerox Co Ltd | 画像読取装置 |
| US5835177A (en) * | 1995-10-05 | 1998-11-10 | Kabushiki Kaisha Toshiba | Array substrate with bus lines takeout/terminal sections having multiple conductive layers |
| TW384412B (en) | 1995-11-17 | 2000-03-11 | Semiconductor Energy Lab | Display device |
| JPH09275202A (ja) | 1996-04-05 | 1997-10-21 | Canon Inc | 光検出装置 |
| US5838054A (en) | 1996-12-23 | 1998-11-17 | General Electric Company | Contact pads for radiation imagers |
| US6066883A (en) | 1998-03-16 | 2000-05-23 | Xerox Corporation | Guarding for a CMOS photosensor chip |
| US6031248A (en) * | 1998-04-28 | 2000-02-29 | Xerox Corporation | Hybrid sensor pixel architecture |
| JP3796072B2 (ja) * | 1999-08-04 | 2006-07-12 | シャープ株式会社 | 透過型液晶表示装置 |
| US6396046B1 (en) * | 1999-11-02 | 2002-05-28 | General Electric Company | Imager with reduced FET photoresponse and high integrity contact via |
-
2002
- 2002-12-17 US US10/322,117 patent/US7307301B2/en not_active Expired - Fee Related
-
2003
- 2003-12-10 FR FR0314449A patent/FR2848728B1/fr not_active Expired - Fee Related
- 2003-12-11 DE DE10357919A patent/DE10357919A1/de not_active Ceased
- 2003-12-16 JP JP2003417404A patent/JP2004200692A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2848728B1 (fr) | 2008-02-22 |
| JP2004200692A (ja) | 2004-07-15 |
| US20040115857A1 (en) | 2004-06-17 |
| US7307301B2 (en) | 2007-12-11 |
| FR2848728A1 (fr) | 2004-06-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8128 | New person/name/address of the agent |
Representative=s name: RUEGER UND KOLLEGEN, 73728 ESSLINGEN |
|
| 8110 | Request for examination paragraph 44 | ||
| R016 | Response to examination communication | ||
| R016 | Response to examination communication | ||
| R002 | Refusal decision in examination/registration proceedings | ||
| R003 | Refusal decision now final |
Effective date: 20130412 |