DE10296331B4 - Speichersystem zum Speichern von Daten und Verfahren zum Liefern von Leistung innerhalb eines Speichersystems - Google Patents
Speichersystem zum Speichern von Daten und Verfahren zum Liefern von Leistung innerhalb eines Speichersystems Download PDFInfo
- Publication number
- DE10296331B4 DE10296331B4 DE10296331T DE10296331T DE10296331B4 DE 10296331 B4 DE10296331 B4 DE 10296331B4 DE 10296331 T DE10296331 T DE 10296331T DE 10296331 T DE10296331 T DE 10296331T DE 10296331 B4 DE10296331 B4 DE 10296331B4
- Authority
- DE
- Germany
- Prior art keywords
- memory
- memory blocks
- blocks
- charge pump
- block
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 21
- 230000015654 memory Effects 0.000 claims abstract description 333
- 238000013500 data storage Methods 0.000 claims abstract description 31
- 238000010248 power generation Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000004913 activation Effects 0.000 claims description 11
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 3
- 238000012806 monitoring device Methods 0.000 claims description 3
- 230000009849 deactivation Effects 0.000 claims 4
- 230000001276 controlling effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000006399 behavior Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Power Sources (AREA)
- Dram (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/785,915 US6577535B2 (en) | 2001-02-16 | 2001-02-16 | Method and system for distributed power generation in multi-chip memory systems |
| US09/785,915 | 2001-02-16 | ||
| PCT/US2002/003618 WO2002067269A2 (en) | 2001-02-16 | 2002-02-08 | Method and system for distributed power generation in multi-chip memory systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE10296331T1 DE10296331T1 (de) | 2003-12-24 |
| DE10296331B4 true DE10296331B4 (de) | 2008-07-24 |
Family
ID=25137008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10296331T Expired - Fee Related DE10296331B4 (de) | 2001-02-16 | 2002-02-08 | Speichersystem zum Speichern von Daten und Verfahren zum Liefern von Leistung innerhalb eines Speichersystems |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6577535B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP3755764B2 (cg-RX-API-DMAC7.html) |
| DE (1) | DE10296331B4 (cg-RX-API-DMAC7.html) |
| GB (1) | GB2388692B (cg-RX-API-DMAC7.html) |
| TW (1) | TW550571B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2002067269A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (96)
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| US6803805B2 (en) * | 2002-04-09 | 2004-10-12 | International Business Machines Corporation | Distributed DC voltage generator for system on chip |
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| DE60221140T2 (de) * | 2002-12-30 | 2008-03-20 | Stmicroelectronics S.R.L., Agrate Brianza | Versorgungsarchitektur für die Einspeisespannung von mehreren Speichermodulen |
| US7107469B2 (en) * | 2003-07-11 | 2006-09-12 | International Business Machines Corporation | Power down processing islands |
| US8429313B2 (en) * | 2004-05-27 | 2013-04-23 | Sandisk Technologies Inc. | Configurable ready/busy control |
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| US7129763B1 (en) | 2004-11-08 | 2006-10-31 | Western Digital Technologies, Inc. | Adjusting power consumption of digital circuitry by generating frequency error representing error in propagation delay |
| US7222248B2 (en) * | 2005-02-22 | 2007-05-22 | International Business Machines Corporation | Method of switching voltage islands in integrated circuits when a grid voltage at a reference location is within a specified range |
| US7482792B2 (en) * | 2005-06-14 | 2009-01-27 | Intel Corporation | IC with fully integrated DC-to-DC power converter |
| WO2007002531A2 (en) * | 2005-06-22 | 2007-01-04 | Thunder Creative Technologies, Inc. | Point-of-load power conditioning for memory modules |
| TWI319160B (en) | 2005-07-11 | 2010-01-01 | Via Tech Inc | Memory card capable of supporting various voltage supply and control chip and method of supporting voltage thereof |
| US7317630B2 (en) * | 2005-07-15 | 2008-01-08 | Atmel Corporation | Nonvolatile semiconductor memory apparatus |
| US7598630B2 (en) | 2005-07-29 | 2009-10-06 | Intel Corporation | IC with on-die power-gating circuit |
| US20070126494A1 (en) * | 2005-12-06 | 2007-06-07 | Sandisk Corporation | Charge pump having shunt diode for improved operating efficiency |
| US20070139099A1 (en) * | 2005-12-16 | 2007-06-21 | Sandisk Corporation | Charge pump regulation control for improved power efficiency |
| US7372320B2 (en) * | 2005-12-16 | 2008-05-13 | Sandisk Corporation | Voltage regulation with active supplemental current for output stabilization |
| US7486060B1 (en) | 2006-03-30 | 2009-02-03 | Western Digital Technologies, Inc. | Switching voltage regulator comprising a cycle comparator for dynamic voltage scaling |
| US20070229149A1 (en) * | 2006-03-30 | 2007-10-04 | Sandisk Corporation | Voltage regulator having high voltage protection |
| US7639531B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
| US7568135B2 (en) | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
| US7613043B2 (en) | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
| US7511646B2 (en) | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
| US7852690B2 (en) | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
| US7551486B2 (en) | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
| US7639542B2 (en) | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
| US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
| US7701797B2 (en) | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
| US7551383B1 (en) | 2006-06-28 | 2009-06-23 | Western Digital Technologies, Inc. | Adjusting voltage delivered to disk drive circuitry based on a selected zone |
| US7434018B2 (en) * | 2006-07-31 | 2008-10-07 | Infineon Technologies North America Corp. | Memory system |
| US7554311B2 (en) * | 2006-07-31 | 2009-06-30 | Sandisk Corporation | Hybrid charge pump regulation |
| US7368979B2 (en) | 2006-09-19 | 2008-05-06 | Sandisk Corporation | Implementation of output floating scheme for hv charge pumps |
| TWI360129B (en) * | 2006-09-29 | 2012-03-11 | Sandisk Corp | Method of operating a removable nonvolatile memory |
| US7656735B2 (en) * | 2006-09-29 | 2010-02-02 | Sandisk Corporation | Dual voltage flash memory methods |
| US7675802B2 (en) * | 2006-09-29 | 2010-03-09 | Sandisk Corporation | Dual voltage flash memory card |
| US7330019B1 (en) | 2006-10-31 | 2008-02-12 | Western Digital Technologies, Inc. | Adjusting on-time for a discontinuous switching voltage regulator |
| US7949887B2 (en) | 2006-11-01 | 2011-05-24 | Intel Corporation | Independent power control of processing cores |
| US8397090B2 (en) * | 2006-12-08 | 2013-03-12 | Intel Corporation | Operating integrated circuit logic blocks at independent voltages with single voltage supply |
| US7477092B2 (en) * | 2006-12-29 | 2009-01-13 | Sandisk Corporation | Unified voltage generation apparatus with improved power efficiency |
| US7440342B2 (en) | 2006-12-29 | 2008-10-21 | Sandisk Corporation | Unified voltage generation method with improved power efficiency |
| US7613051B2 (en) | 2007-03-14 | 2009-11-03 | Apple Inc. | Interleaving charge pumps for programmable memories |
| US7580298B2 (en) * | 2007-03-30 | 2009-08-25 | Sandisk 3D Llc | Method for managing electrical load of an electronic device |
| US7515488B2 (en) * | 2007-03-30 | 2009-04-07 | Sandisk 3D Llc | Method for load-based voltage generation |
| US7558129B2 (en) * | 2007-03-30 | 2009-07-07 | Sandisk 3D Llc | Device with load-based voltage generation |
| US7580296B2 (en) * | 2007-03-30 | 2009-08-25 | Sandisk 3D Llc | Load management for memory device |
| JP2009003991A (ja) * | 2007-06-19 | 2009-01-08 | Toshiba Corp | 半導体装置及び半導体メモリテスト装置 |
| US8044705B2 (en) * | 2007-08-28 | 2011-10-25 | Sandisk Technologies Inc. | Bottom plate regulation of charge pumps |
| US7733189B1 (en) | 2007-09-14 | 2010-06-08 | Western Digital Technologies, Inc. | Oscillator comprising foldover detection |
| US7586363B2 (en) * | 2007-12-12 | 2009-09-08 | Sandisk Corporation | Diode connected regulation of charge pumps |
| US7586362B2 (en) * | 2007-12-12 | 2009-09-08 | Sandisk Corporation | Low voltage charge pump with regulation |
| JP2009146499A (ja) * | 2007-12-13 | 2009-07-02 | Toshiba Corp | 不揮発性メモリカード |
| US7813212B2 (en) * | 2008-01-17 | 2010-10-12 | Mosaid Technologies Incorporated | Nonvolatile memory having non-power of two memory capacity |
| US7969235B2 (en) | 2008-06-09 | 2011-06-28 | Sandisk Corporation | Self-adaptive multi-stage charge pump |
| US20090302930A1 (en) * | 2008-06-09 | 2009-12-10 | Feng Pan | Charge Pump with Vt Cancellation Through Parallel Structure |
| US8085020B1 (en) | 2008-06-13 | 2011-12-27 | Western Digital Technologies, Inc. | Switching voltage regulator employing dynamic voltage scaling with hysteretic comparator |
| US8710907B2 (en) * | 2008-06-24 | 2014-04-29 | Sandisk Technologies Inc. | Clock generator circuit for a charge pump |
| US7683700B2 (en) | 2008-06-25 | 2010-03-23 | Sandisk Corporation | Techniques of ripple reduction for charge pumps |
| KR20100011292A (ko) * | 2008-07-24 | 2010-02-03 | 삼성전자주식회사 | 수직 스트링 상변화 메모리 소자 |
| KR100956780B1 (ko) * | 2008-09-09 | 2010-05-12 | 주식회사 하이닉스반도체 | 펌핑전압 발생 장치 |
| US8031549B2 (en) * | 2008-09-19 | 2011-10-04 | Freescale Semiconductor, Inc. | Integrated circuit having boosted array voltage and method therefor |
| US8742838B2 (en) * | 2008-10-20 | 2014-06-03 | The University Of Tokyo | Stacked structure with a voltage boosting supply circuit |
| US7795952B2 (en) * | 2008-12-17 | 2010-09-14 | Sandisk Corporation | Regulation of recovery rates in charge pumps |
| US7973592B2 (en) * | 2009-07-21 | 2011-07-05 | Sandisk Corporation | Charge pump with current based regulation |
| US8339183B2 (en) * | 2009-07-24 | 2012-12-25 | Sandisk Technologies Inc. | Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories |
| WO2011014158A1 (en) * | 2009-07-27 | 2011-02-03 | Hewlett-Packard Development Company, L.P. | Method and system for power-efficient and non-signal-degrading voltage regulation in memory subsystems |
| US8582374B2 (en) * | 2009-12-15 | 2013-11-12 | Intel Corporation | Method and apparatus for dynamically adjusting voltage reference to optimize an I/O system |
| US20110148509A1 (en) * | 2009-12-17 | 2011-06-23 | Feng Pan | Techniques to Reduce Charge Pump Overshoot |
| WO2012001917A1 (ja) | 2010-06-29 | 2012-01-05 | パナソニック株式会社 | 不揮発性記憶システム、メモリシステム用の電源回路、フラッシュメモリ、フラッシュメモリコントローラ、および不揮発性半導体記憶装置 |
| US8937404B1 (en) | 2010-08-23 | 2015-01-20 | Western Digital Technologies, Inc. | Data storage device comprising dual mode independent/parallel voltage regulators |
| US8294509B2 (en) | 2010-12-20 | 2012-10-23 | Sandisk Technologies Inc. | Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances |
| US8339185B2 (en) | 2010-12-20 | 2012-12-25 | Sandisk 3D Llc | Charge pump system that dynamically selects number of active stages |
| US8621258B2 (en) * | 2011-07-18 | 2013-12-31 | Maishi Electronic (Shanghai) Ltd. | Device for operating two memory cards in two sockets with different pin arrangements |
| US20130042063A1 (en) * | 2011-08-08 | 2013-02-14 | Chi Mei Communication Systems, Inc. | System and method for controlling dual memory cards |
| US8699247B2 (en) | 2011-09-09 | 2014-04-15 | Sandisk Technologies Inc. | Charge pump system dynamically reconfigurable for read and program |
| US8514628B2 (en) | 2011-09-22 | 2013-08-20 | Sandisk Technologies Inc. | Dynamic switching approach to reduce area and power consumption of high voltage charge pumps |
| US8400212B1 (en) | 2011-09-22 | 2013-03-19 | Sandisk Technologies Inc. | High voltage charge pump regulation system with fine step adjustment |
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| US8836412B2 (en) | 2013-02-11 | 2014-09-16 | Sandisk 3D Llc | Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple |
| US8981835B2 (en) | 2013-06-18 | 2015-03-17 | Sandisk Technologies Inc. | Efficient voltage doubler |
| US9024680B2 (en) | 2013-06-24 | 2015-05-05 | Sandisk Technologies Inc. | Efficiency for charge pumps with low supply voltages |
| US9077238B2 (en) | 2013-06-25 | 2015-07-07 | SanDisk Technologies, Inc. | Capacitive regulation of charge pumps without refresh operation interruption |
| US9007046B2 (en) | 2013-06-27 | 2015-04-14 | Sandisk Technologies Inc. | Efficient high voltage bias regulation circuit |
| US9083231B2 (en) | 2013-09-30 | 2015-07-14 | Sandisk Technologies Inc. | Amplitude modulation for pass gate to improve charge pump efficiency |
| US9154027B2 (en) | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
| US9671855B2 (en) * | 2014-06-30 | 2017-06-06 | Micron Technology, Inc. | Apparatuses and methods of entering unselected memories into a different power mode during multi-memory operation |
| US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
| US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
| US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
| KR102430865B1 (ko) | 2015-10-02 | 2022-08-10 | 삼성전자주식회사 | 멀티 메모리 다이 구조에서 외부 파워에 대한 피크 전류 감소 기능을 갖는 반도체 메모리 장치 |
| KR20170062635A (ko) * | 2015-11-27 | 2017-06-08 | 삼성전자주식회사 | 멀티 메모리 다이 구조에서 피크 전류 감소 기능을 갖는 반도체 메모리 장치 |
| US10331575B2 (en) * | 2017-04-11 | 2019-06-25 | Integrated Silicon Solution, Inc. | Secured chip enable with chip disable |
| JP6482690B1 (ja) * | 2018-01-11 | 2019-03-13 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
| US10852807B2 (en) * | 2018-02-01 | 2020-12-01 | Microsoft Technology Licensing, Llc | Hybrid powering off of storage component memory cells |
| JP6535784B1 (ja) * | 2018-04-25 | 2019-06-26 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
| US10775424B2 (en) * | 2018-08-31 | 2020-09-15 | Micron Technology, Inc. | Capacitive voltage divider for monitoring multiple memory components |
| US10796773B1 (en) * | 2019-05-14 | 2020-10-06 | Micron Technolgy, Inc. | Memory devices including voltage generation systems |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5563825A (en) * | 1994-10-17 | 1996-10-08 | Sandisk Corporation | Programmable power generation circuit for flash eeprom memory systems |
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-
2001
- 2001-02-16 US US09/785,915 patent/US6577535B2/en not_active Expired - Lifetime
-
2002
- 2002-02-08 DE DE10296331T patent/DE10296331B4/de not_active Expired - Fee Related
- 2002-02-08 GB GB0318968A patent/GB2388692B/en not_active Expired - Fee Related
- 2002-02-08 JP JP2002566502A patent/JP3755764B2/ja not_active Expired - Fee Related
- 2002-02-08 WO PCT/US2002/003618 patent/WO2002067269A2/en not_active Ceased
- 2002-02-18 TW TW091102676A patent/TW550571B/zh not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5563825A (en) * | 1994-10-17 | 1996-10-08 | Sandisk Corporation | Programmable power generation circuit for flash eeprom memory systems |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002067269A2 (en) | 2002-08-29 |
| TW550571B (en) | 2003-09-01 |
| GB2388692A (en) | 2003-11-19 |
| JP3755764B2 (ja) | 2006-03-15 |
| JP2004526239A (ja) | 2004-08-26 |
| GB2388692B (en) | 2005-02-23 |
| GB0318968D0 (en) | 2003-09-17 |
| WO2002067269B1 (en) | 2003-08-07 |
| US20020141238A1 (en) | 2002-10-03 |
| WO2002067269A3 (en) | 2003-02-27 |
| US6577535B2 (en) | 2003-06-10 |
| DE10296331T1 (de) | 2003-12-24 |
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