DE10257203B8 - Lastansteuerungsschaltung unter Verwendung einer Freilaufdiode - Google Patents
Lastansteuerungsschaltung unter Verwendung einer Freilaufdiode Download PDFInfo
- Publication number
- DE10257203B8 DE10257203B8 DE10257203A DE10257203A DE10257203B8 DE 10257203 B8 DE10257203 B8 DE 10257203B8 DE 10257203 A DE10257203 A DE 10257203A DE 10257203 A DE10257203 A DE 10257203A DE 10257203 B8 DE10257203 B8 DE 10257203B8
- Authority
- DE
- Germany
- Prior art keywords
- drive circuit
- freewheeling diode
- load drive
- load
- freewheeling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7804—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
- H01L29/7805—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode in antiparallel, e.g. freewheel diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
- Power Conversion In General (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP01-373129 | 2001-12-06 | ||
JP2001373129 | 2001-12-06 | ||
JP2002300627A JP3891090B2 (ja) | 2001-12-06 | 2002-10-15 | 還流ダイオードおよび負荷駆動回路 |
JP02-300627 | 2002-10-15 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE10257203A1 DE10257203A1 (de) | 2004-04-29 |
DE10257203B4 DE10257203B4 (de) | 2012-10-04 |
DE10257203B8 true DE10257203B8 (de) | 2012-12-13 |
Family
ID=26624920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10257203A Expired - Fee Related DE10257203B8 (de) | 2001-12-06 | 2002-12-06 | Lastansteuerungsschaltung unter Verwendung einer Freilaufdiode |
Country Status (4)
Country | Link |
---|---|
US (1) | US6829152B2 (de) |
JP (1) | JP3891090B2 (de) |
CN (1) | CN1245800C (de) |
DE (1) | DE10257203B8 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7130205B2 (en) * | 2002-06-12 | 2006-10-31 | Michigan State University | Impedance source power converter |
DE10336512B4 (de) * | 2002-08-08 | 2015-12-17 | Denso Corporation | Ansteuerungsvorrichtung für eine PWM-Steuerung von zwei induktiven Lasten mit reduzierter Erzeugung von elektrischen Störungen |
JP3964399B2 (ja) * | 2004-03-09 | 2007-08-22 | カルソニックカンセイ株式会社 | 電動モータ駆動装置 |
JP4807768B2 (ja) * | 2004-06-23 | 2011-11-02 | ルネサスエレクトロニクス株式会社 | パワートランジスタ装置及びそれを用いたパワー制御システム |
JP2006114619A (ja) * | 2004-10-13 | 2006-04-27 | Furukawa Electric Co Ltd:The | フライホイールダイオード |
TW200631296A (en) * | 2004-11-15 | 2006-09-01 | Toshiba Kk | Power conversion apparatus |
JP4317825B2 (ja) * | 2005-02-25 | 2009-08-19 | 三菱重工業株式会社 | インバータ装置 |
JP4321491B2 (ja) * | 2005-05-17 | 2009-08-26 | トヨタ自動車株式会社 | 電圧駆動型半導体素子の駆動装置 |
JP5101001B2 (ja) * | 2005-11-04 | 2012-12-19 | 東芝キヤリア株式会社 | インバータ装置 |
JP4772542B2 (ja) | 2006-03-15 | 2011-09-14 | 株式会社東芝 | 電力変換装置 |
JP2007288094A (ja) * | 2006-04-20 | 2007-11-01 | Fuji Electric Device Technology Co Ltd | Igbtとそれを駆動するゲート駆動回路 |
JP4372812B2 (ja) * | 2007-07-23 | 2009-11-25 | トヨタ自動車株式会社 | 半導体スイッチング素子の駆動制御装置 |
DE102008045410B4 (de) * | 2007-09-05 | 2019-07-11 | Denso Corporation | Halbleitervorrichtung mit IGBT mit eingebauter Diode und Halbleitervorrichtung mit DMOS mit eingebauter Diode |
JP5298679B2 (ja) * | 2008-07-17 | 2013-09-25 | サンケン電気株式会社 | 共振型スイッチング電源装置、及びそのデッドタイム調整方法 |
JP5476737B2 (ja) * | 2009-02-24 | 2014-04-23 | 日産自動車株式会社 | 半導体装置 |
JP4977165B2 (ja) | 2009-04-01 | 2012-07-18 | トヨタ自動車株式会社 | 3相ブラシレスモータのノイズ低減構造 |
DE102009060346A1 (de) * | 2009-12-24 | 2011-06-30 | Merten GmbH & Co. KG, 51674 | Elektrische Schaltung zum Schalten und/oder Dimmen von Lasten |
JP2012005295A (ja) * | 2010-06-18 | 2012-01-05 | Minebea Co Ltd | モータ駆動回路 |
JP5530296B2 (ja) * | 2010-08-05 | 2014-06-25 | 矢崎総業株式会社 | 負荷制御装置 |
US8674713B2 (en) | 2010-10-21 | 2014-03-18 | Tektronix, Inc. | Zero ampere level current data correction for a power device under test |
JP5552691B2 (ja) * | 2010-10-28 | 2014-07-16 | トランスフォーム・ジャパン株式会社 | レギュレータ回路 |
TW201225510A (en) * | 2010-12-07 | 2012-06-16 | xiang-yu Li | Safe motor energy recycling device |
JP5344005B2 (ja) * | 2011-06-07 | 2013-11-20 | 株式会社豊田自動織機 | スイッチング回路 |
JP5413472B2 (ja) | 2011-06-15 | 2014-02-12 | 株式会社デンソー | 半導体装置 |
WO2014049808A1 (ja) * | 2012-09-28 | 2014-04-03 | 株式会社日立製作所 | 電力変換装置 |
US9065445B2 (en) * | 2012-12-17 | 2015-06-23 | Continental Automotive Systems, Inc. | Voltage clamp assist circuit |
US9362859B2 (en) * | 2013-09-25 | 2016-06-07 | General Electric Company | System and method for controlling switching elements within a single-phase bridge circuit |
US9768693B2 (en) * | 2013-11-14 | 2017-09-19 | Tm4 Inc. | Compensation circuit, commutation cell and power converter controlling turn-on and turn-off of a power electronic switch |
JP2015122676A (ja) * | 2013-12-25 | 2015-07-02 | ボッシュ株式会社 | 駆動回路 |
JP2015154591A (ja) * | 2014-02-14 | 2015-08-24 | ローム株式会社 | ゲート駆動回路および電源装置 |
CN104052433A (zh) * | 2014-03-21 | 2014-09-17 | 郑州士奇测控技术有限公司 | 一种新型无线随钻测斜仪用脉冲发生器驱动装置 |
US20170070223A1 (en) * | 2015-06-11 | 2017-03-09 | KSR IP Holdings, LLC | Dv/dt control in mosfet gate drive |
CN104953991A (zh) * | 2015-06-23 | 2015-09-30 | 东南大学 | 带电平自举和电荷泵电路的双n-mosfet推动级的igbt驱动电路及时序控制方法 |
JP6528575B2 (ja) * | 2015-07-17 | 2019-06-12 | 富士電機株式会社 | 半導体スイッチング装置 |
JP6601086B2 (ja) * | 2015-09-16 | 2019-11-06 | 富士電機株式会社 | 半導体装置及びその製造方法 |
DE102016100224B3 (de) * | 2016-01-07 | 2017-05-24 | Lisa Dräxlmaier GmbH | Schaltvorrichtung, Verfahren und Herstellungsverfahren |
US10164614B2 (en) | 2016-03-31 | 2018-12-25 | Analog Devices Global Unlimited Company | Tank circuit and frequency hopping for isolators |
DE102016212211B4 (de) * | 2016-07-05 | 2019-02-21 | Siemens Aktiengesellschaft | Kurzschlusserkennung |
JP6862722B2 (ja) * | 2016-09-01 | 2021-04-21 | 富士電機株式会社 | 電力変換装置 |
US10122357B2 (en) * | 2016-11-14 | 2018-11-06 | Ford Global Technologies, Llc | Sensorless temperature compensation for power switching devices |
FR3058850B1 (fr) * | 2016-11-15 | 2020-02-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Commutateur de puissance comportant une pluralite de transistors a effet de champ montes en parallele |
CN106712562A (zh) * | 2016-12-15 | 2017-05-24 | 宁波央腾汽车电子有限公司 | 一种感性负载电路及消除电流尖峰的方法 |
US10193544B2 (en) * | 2017-04-21 | 2019-01-29 | Ford Global Technologies, Llc | Minimizing ringing in wide band gap semiconductor devices |
EP3503365B1 (de) * | 2017-12-22 | 2020-06-10 | GE Energy Power Conversion Technology Limited | Verfahren und einrichtung zur ansteuerung von mosfet-schaltmodulen |
GB2580155A (en) * | 2018-12-21 | 2020-07-15 | Comet Ag | Radiofrequency power amplifier |
JP7300370B2 (ja) * | 2019-11-05 | 2023-06-29 | 株式会社日立製作所 | 半導体装置の駆動装置および駆動方法、並びに電力変換装置 |
KR20220077804A (ko) * | 2020-12-02 | 2022-06-09 | 현대모비스 주식회사 | 스위칭전류센싱시의 옵셋보상 장치 및 방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0082422A1 (de) * | 1981-12-23 | 1983-06-29 | Siemens Aktiengesellschaft | Beschaltung für einen Leistungs-Feldeffekttransistor |
Family Cites Families (10)
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---|---|---|---|---|
JPS61237513A (ja) * | 1985-04-12 | 1986-10-22 | Mitsubishi Electric Corp | 電界効果型トランジスタの駆動回路 |
US5012381A (en) * | 1989-09-13 | 1991-04-30 | Motorola, Inc. | Motor drive circuit with reverse-battery protection |
JP3808116B2 (ja) * | 1995-04-12 | 2006-08-09 | 富士電機デバイステクノロジー株式会社 | 高耐圧ic |
JP3067601B2 (ja) | 1995-08-02 | 2000-07-17 | 株式会社デンソー | 電動モータの制御装置 |
GB9521332D0 (en) * | 1995-10-18 | 1995-12-20 | Switched Reluctance Drives Ltd | Current control circuit for a reluctance machine |
JP3615004B2 (ja) * | 1996-12-12 | 2005-01-26 | 株式会社デンソー | 電力変換装置 |
JP3462032B2 (ja) * | 1997-03-04 | 2003-11-05 | 株式会社東芝 | 電力変換装置 |
US6291298B1 (en) * | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
JP2001008494A (ja) * | 1999-06-22 | 2001-01-12 | Denso Corp | ブリッジ形電力変換回路 |
JP3812353B2 (ja) * | 2001-03-19 | 2006-08-23 | 株式会社日立製作所 | 半導体電力変換装置 |
-
2002
- 2002-10-15 JP JP2002300627A patent/JP3891090B2/ja not_active Expired - Fee Related
- 2002-12-06 US US10/310,967 patent/US6829152B2/en not_active Expired - Lifetime
- 2002-12-06 CN CNB021557209A patent/CN1245800C/zh not_active Expired - Fee Related
- 2002-12-06 DE DE10257203A patent/DE10257203B8/de not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0082422A1 (de) * | 1981-12-23 | 1983-06-29 | Siemens Aktiengesellschaft | Beschaltung für einen Leistungs-Feldeffekttransistor |
Also Published As
Publication number | Publication date |
---|---|
US6829152B2 (en) | 2004-12-07 |
JP2003235240A (ja) | 2003-08-22 |
CN1245800C (zh) | 2006-03-15 |
CN1424822A (zh) | 2003-06-18 |
DE10257203B4 (de) | 2012-10-04 |
JP3891090B2 (ja) | 2007-03-07 |
US20030107905A1 (en) | 2003-06-12 |
DE10257203A1 (de) | 2004-04-29 |
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