DE102019201158B4 - Halbleiterbaugruppe - Google Patents

Halbleiterbaugruppe Download PDF

Info

Publication number
DE102019201158B4
DE102019201158B4 DE102019201158.6A DE102019201158A DE102019201158B4 DE 102019201158 B4 DE102019201158 B4 DE 102019201158B4 DE 102019201158 A DE102019201158 A DE 102019201158A DE 102019201158 B4 DE102019201158 B4 DE 102019201158B4
Authority
DE
Germany
Prior art keywords
sealing resin
semiconductor
semiconductor device
fuse portion
inner wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102019201158.6A
Other languages
German (de)
English (en)
Other versions
DE102019201158A1 (de
Inventor
Yoshitaka Otsubo
Masayuki Ando
Kota Ohara
Takamasa ODA
Takuro Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102019201158A1 publication Critical patent/DE102019201158A1/de
Application granted granted Critical
Publication of DE102019201158B4 publication Critical patent/DE102019201158B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/40Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/60Seals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/25Arrangements for cooling characterised by their materials
    • H10W40/255Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/80Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/15Containers comprising an insulating or insulated base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42Fillings
    • H10W76/47Solid or gel fillings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Fuses (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
DE102019201158.6A 2018-03-27 2019-01-30 Halbleiterbaugruppe Active DE102019201158B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018060114A JP6895126B2 (ja) 2018-03-27 2018-03-27 半導体パッケージ
JP2018-060114 2018-03-27

Publications (2)

Publication Number Publication Date
DE102019201158A1 DE102019201158A1 (de) 2019-10-02
DE102019201158B4 true DE102019201158B4 (de) 2022-01-27

Family

ID=67910315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102019201158.6A Active DE102019201158B4 (de) 2018-03-27 2019-01-30 Halbleiterbaugruppe

Country Status (4)

Country Link
US (1) US10593605B2 (https=)
JP (1) JP6895126B2 (https=)
CN (1) CN110310930B (https=)
DE (1) DE102019201158B4 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11527456B2 (en) * 2019-10-31 2022-12-13 Ut-Battelle, Llc Power module with organic layers
JP7209615B2 (ja) * 2019-11-13 2023-01-20 三菱電機株式会社 半導体装置
WO2021195871A1 (zh) * 2020-03-30 2021-10-07 华为技术有限公司 埋入式基板、电路板组件及电子设备
JP7735655B2 (ja) * 2020-10-15 2025-09-09 富士電機株式会社 半導体装置
JP7784974B2 (ja) * 2022-09-08 2025-12-12 三菱電機株式会社 半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19639279A1 (de) 1996-09-25 1998-04-02 Abb Daimler Benz Transp Schutzschaltung für ein abschaltbares Halbleiterbauelement
US5744860A (en) 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
JP2000138107A (ja) 1998-11-04 2000-05-16 Mitsubishi Materials Corp 半導体サージ吸収素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233953A (ja) * 1988-07-22 1990-02-05 Mitsubishi Electric Corp 半導体装置
JP3506733B2 (ja) * 1993-07-09 2004-03-15 ローム株式会社 安全ヒューズ付き面実装型電子部品の構造
JP3019679B2 (ja) * 1993-09-08 2000-03-13 富士電機株式会社 半導体装置の内部配線構造
JPH1012806A (ja) * 1996-06-24 1998-01-16 Toshiba Corp 半導体装置
JP3778268B2 (ja) * 2001-03-21 2006-05-24 オムロン株式会社 過電流遮断構造の製造方法
JP4615289B2 (ja) * 2004-11-12 2011-01-19 三菱電機株式会社 半導体装置
US20070075822A1 (en) * 2005-10-03 2007-04-05 Littlefuse, Inc. Fuse with cavity forming enclosure
JP2008235502A (ja) * 2007-03-20 2008-10-02 Mitsubishi Electric Corp 樹脂封止型半導体装置
CN104112730A (zh) * 2013-06-09 2014-10-22 广东美的制冷设备有限公司 智能功率模块及其制造方法
JP6916997B2 (ja) * 2016-03-17 2021-08-11 富士電機株式会社 半導体装置
JP6627698B2 (ja) * 2016-09-13 2020-01-08 三菱電機株式会社 半導体装置
JP2018060114A (ja) 2016-10-07 2018-04-12 キヤノン株式会社 投影型表示装置
US9865537B1 (en) * 2016-12-30 2018-01-09 Texas Instruments Incorporated Methods and apparatus for integrated circuit failsafe fuse package with arc arrest

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744860A (en) 1996-02-06 1998-04-28 Asea Brown Boveri Ag Power semiconductor module
DE19639279A1 (de) 1996-09-25 1998-04-02 Abb Daimler Benz Transp Schutzschaltung für ein abschaltbares Halbleiterbauelement
JP2000138107A (ja) 1998-11-04 2000-05-16 Mitsubishi Materials Corp 半導体サージ吸収素子

Also Published As

Publication number Publication date
JP2019175923A (ja) 2019-10-10
US20190304859A1 (en) 2019-10-03
JP6895126B2 (ja) 2021-06-30
DE102019201158A1 (de) 2019-10-02
CN110310930A (zh) 2019-10-08
US10593605B2 (en) 2020-03-17
CN110310930B (zh) 2023-06-30

Similar Documents

Publication Publication Date Title
DE102019201158B4 (de) Halbleiterbaugruppe
DE102009011233B4 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE10048377B4 (de) Halbleiter-Leistungsmodul mit elektrisch isolierender Wärmesenke und Verfahren zu seiner Herstellung
DE102008025705B4 (de) Leistungshalbleitervorrichtung
DE112017007994B4 (de) Elektrische Leistungswandlungsvorrichtung
DE102011077543B4 (de) Halbleitervorrichtung
DE19926128B4 (de) Leistungs-Halbleiterbauteil-Gehäuse
DE102004043523B4 (de) Halbleitervorrichtung mit Wärmeabstrahlplatte und Anheftteil
DE102017203024B4 (de) Leistungshalbleitermodul
DE10251248A1 (de) Leistungshalbleitervorrichtung
CH663491A5 (en) Electronic circuit module
DE112014005694T5 (de) Halbleitermodul
EP0889526A2 (de) Leistungshalbleitermodul mit geschlossenen Submodulen
DE112012007049B4 (de) Überspannungsschutzvorrichtung
DE1961314A1 (de) Geschuetztes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE102019002210A1 (de) Halbleiterleistungsmodul zu m schutz vor einem kurzschlussereignis
DE112020000206T5 (de) Halbleitermodul-Schaltkreisstruktur
DE112013006402B4 (de) Halbleitervorrichtung
DE69308497T2 (de) Schutzvorrichtung für Telekommunikationsanlagen
DE102018204764A1 (de) Halbleiter- packagesystem
DE10303103B4 (de) Halbleiterbauteil, insbesondere Leistungshalbleiterbauteil
DE102011000374A1 (de) Wasserdichte Struktur für Halbleitergehäuse
DE112022004779T5 (de) Halbleitervorrichtung
DE69713635T2 (de) Unter internem Druck zusammengesetzte Halbleiteranordnung mit einem Chip-Rahmen, der eine längere Kriechstrecke erlaubt
DE102019135274A1 (de) Leistungsmodul, Stromrichter und Kraftfahrzeugkomponente

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R084 Declaration of willingness to licence
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0023160000

Ipc: H10W0076400000