DE102019118470A1 - Leseschaltung für magnettunnelübergangs-(magnetic tunneling junction - mtj)-speicher - Google Patents

Leseschaltung für magnettunnelübergangs-(magnetic tunneling junction - mtj)-speicher Download PDF

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Publication number
DE102019118470A1
DE102019118470A1 DE102019118470.3A DE102019118470A DE102019118470A1 DE 102019118470 A1 DE102019118470 A1 DE 102019118470A1 DE 102019118470 A DE102019118470 A DE 102019118470A DE 102019118470 A1 DE102019118470 A1 DE 102019118470A1
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DE
Germany
Prior art keywords
mtj
resistance
transistor
pull
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102019118470.3A
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German (de)
English (en)
Inventor
Gaurav Gupta
Zhiqiang Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of DE102019118470A1 publication Critical patent/DE102019118470A1/de
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1693—Timing circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
DE102019118470.3A 2018-10-29 2019-07-09 Leseschaltung für magnettunnelübergangs-(magnetic tunneling junction - mtj)-speicher Pending DE102019118470A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862751994P 2018-10-29 2018-10-29
US62/751,994 2018-10-29
US16/502,430 2019-07-03
US16/502,430 US10867652B2 (en) 2018-10-29 2019-07-03 Read circuit for magnetic tunnel junction (MTJ) memory

Publications (1)

Publication Number Publication Date
DE102019118470A1 true DE102019118470A1 (de) 2020-04-30

Family

ID=70327255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102019118470.3A Pending DE102019118470A1 (de) 2018-10-29 2019-07-09 Leseschaltung für magnettunnelübergangs-(magnetic tunneling junction - mtj)-speicher

Country Status (5)

Country Link
US (3) US10867652B2 (zh)
KR (1) KR102266211B1 (zh)
CN (1) CN111105834B (zh)
DE (1) DE102019118470A1 (zh)
TW (1) TWI720641B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10957849B2 (en) * 2018-05-24 2021-03-23 Applied Materials, Inc. Magnetic tunnel junctions with coupling-pinning layer lattice matching
US10839879B2 (en) * 2018-09-27 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Read techniques for a magnetic tunnel junction (MTJ) memory device with a current mirror
US10867652B2 (en) 2018-10-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Read circuit for magnetic tunnel junction (MTJ) memory
KR102651232B1 (ko) 2019-07-18 2024-03-25 삼성전자주식회사 자기접합 메모리 장치 및 자기접합 메모리 장치의 데이터 리드 방법
US10998024B2 (en) * 2019-07-31 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method for enhancing tunnel magnetoresistance in memory device
US11145347B1 (en) * 2020-05-21 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and memory circuit

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6754123B2 (en) * 2002-10-01 2004-06-22 Hewlett-Packard Development Company, Lp. Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having diode isolation
US6839263B2 (en) * 2003-02-05 2005-01-04 Hewlett-Packard Development Company, L.P. Memory array with continuous current path through multiple lines
US7161861B2 (en) * 2004-11-15 2007-01-09 Infineon Technologies Ag Sense amplifier bitline boost circuit
US8027206B2 (en) 2009-01-30 2011-09-27 Qualcomm Incorporated Bit line voltage control in spin transfer torque magnetoresistive random access memory
US8270208B2 (en) * 2010-02-08 2012-09-18 International Business Machines Corporation Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor
EP2831880B1 (en) 2012-03-25 2017-03-15 Intel Corporation Methods and systems to read a magnetic tunnel junction (mtj) based memory cell based on a pulsed read current
US8953370B2 (en) * 2013-02-21 2015-02-10 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell with decoupled read/write path
US9153307B2 (en) * 2013-09-09 2015-10-06 Qualcomm Incorporated System and method to provide a reference cell
US20150070983A1 (en) * 2013-09-09 2015-03-12 Yoshinori Kumura Magnetic memory device
CN108292701B (zh) * 2015-12-24 2022-12-13 英特尔公司 具有增强隧穿磁阻比的存储器单元、包括其的存储器设备和系统
US10854259B2 (en) * 2018-06-29 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM)
US10867652B2 (en) * 2018-10-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Read circuit for magnetic tunnel junction (MTJ) memory

Also Published As

Publication number Publication date
US20210090631A1 (en) 2021-03-25
US11342016B2 (en) 2022-05-24
CN111105834A (zh) 2020-05-05
KR20200050368A (ko) 2020-05-11
US20200135252A1 (en) 2020-04-30
TW202029191A (zh) 2020-08-01
TWI720641B (zh) 2021-03-01
KR102266211B1 (ko) 2021-06-21
US20220277782A1 (en) 2022-09-01
US10867652B2 (en) 2020-12-15
CN111105834B (zh) 2022-01-04
US11862218B2 (en) 2024-01-02

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