DE102019118470A1 - Leseschaltung für magnettunnelübergangs-(magnetic tunneling junction - mtj)-speicher - Google Patents
Leseschaltung für magnettunnelübergangs-(magnetic tunneling junction - mtj)-speicher Download PDFInfo
- Publication number
- DE102019118470A1 DE102019118470A1 DE102019118470.3A DE102019118470A DE102019118470A1 DE 102019118470 A1 DE102019118470 A1 DE 102019118470A1 DE 102019118470 A DE102019118470 A DE 102019118470A DE 102019118470 A1 DE102019118470 A1 DE 102019118470A1
- Authority
- DE
- Germany
- Prior art keywords
- mtj
- resistance
- transistor
- pull
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1693—Timing circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862751994P | 2018-10-29 | 2018-10-29 | |
| US62/751,994 | 2018-10-29 | ||
| US16/502,430 US10867652B2 (en) | 2018-10-29 | 2019-07-03 | Read circuit for magnetic tunnel junction (MTJ) memory |
| US16/502,430 | 2019-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102019118470A1 true DE102019118470A1 (de) | 2020-04-30 |
Family
ID=70327255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102019118470.3A Pending DE102019118470A1 (de) | 2018-10-29 | 2019-07-09 | Leseschaltung für magnettunnelübergangs-(magnetic tunneling junction - mtj)-speicher |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US10867652B2 (zh) |
| KR (1) | KR102266211B1 (zh) |
| CN (1) | CN111105834B (zh) |
| DE (1) | DE102019118470A1 (zh) |
| TW (1) | TWI720641B (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10957849B2 (en) * | 2018-05-24 | 2021-03-23 | Applied Materials, Inc. | Magnetic tunnel junctions with coupling-pinning layer lattice matching |
| US10839879B2 (en) * | 2018-09-27 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Read techniques for a magnetic tunnel junction (MTJ) memory device with a current mirror |
| US10867652B2 (en) | 2018-10-29 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Read circuit for magnetic tunnel junction (MTJ) memory |
| KR102651232B1 (ko) | 2019-07-18 | 2024-03-25 | 삼성전자주식회사 | 자기접합 메모리 장치 및 자기접합 메모리 장치의 데이터 리드 방법 |
| US10998024B2 (en) * | 2019-07-31 | 2021-05-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for enhancing tunnel magnetoresistance in memory device |
| US11145347B1 (en) * | 2020-05-21 | 2021-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and memory circuit |
| JP2023043732A (ja) * | 2021-09-16 | 2023-03-29 | キオクシア株式会社 | 磁気記憶装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6754123B2 (en) * | 2002-10-01 | 2004-06-22 | Hewlett-Packard Development Company, Lp. | Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having diode isolation |
| US6839263B2 (en) * | 2003-02-05 | 2005-01-04 | Hewlett-Packard Development Company, L.P. | Memory array with continuous current path through multiple lines |
| US7161861B2 (en) * | 2004-11-15 | 2007-01-09 | Infineon Technologies Ag | Sense amplifier bitline boost circuit |
| US8027206B2 (en) | 2009-01-30 | 2011-09-27 | Qualcomm Incorporated | Bit line voltage control in spin transfer torque magnetoresistive random access memory |
| US8270208B2 (en) * | 2010-02-08 | 2012-09-18 | International Business Machines Corporation | Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor |
| WO2013147728A1 (en) | 2012-03-25 | 2013-10-03 | Intel Corporation | Methods and systems to read a magnetic tunnel junction (mtj) based memory cell based on a pulsed read current |
| US8953370B2 (en) * | 2013-02-21 | 2015-02-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory cell with decoupled read/write path |
| US9153307B2 (en) * | 2013-09-09 | 2015-10-06 | Qualcomm Incorporated | System and method to provide a reference cell |
| US20150070983A1 (en) * | 2013-09-09 | 2015-03-12 | Yoshinori Kumura | Magnetic memory device |
| WO2017111851A1 (en) * | 2015-12-24 | 2017-06-29 | Intel Corporation | Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same |
| US10854259B2 (en) * | 2018-06-29 | 2020-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asynchronous read circuit using delay sensing in magnetoresistive random access memory (MRAM) |
| US10867652B2 (en) * | 2018-10-29 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Read circuit for magnetic tunnel junction (MTJ) memory |
-
2019
- 2019-07-03 US US16/502,430 patent/US10867652B2/en active Active
- 2019-07-09 DE DE102019118470.3A patent/DE102019118470A1/de active Pending
- 2019-10-04 KR KR1020190123306A patent/KR102266211B1/ko active IP Right Grant
- 2019-10-05 TW TW108136150A patent/TWI720641B/zh active
- 2019-10-28 CN CN201911029164.6A patent/CN111105834B/zh active Active
-
2020
- 2020-12-03 US US17/110,624 patent/US11342016B2/en active Active
-
2022
- 2022-05-19 US US17/748,560 patent/US11862218B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20220277782A1 (en) | 2022-09-01 |
| TW202029191A (zh) | 2020-08-01 |
| TWI720641B (zh) | 2021-03-01 |
| KR20200050368A (ko) | 2020-05-11 |
| CN111105834B (zh) | 2022-01-04 |
| CN111105834A (zh) | 2020-05-05 |
| US20200135252A1 (en) | 2020-04-30 |
| US11862218B2 (en) | 2024-01-02 |
| US20210090631A1 (en) | 2021-03-25 |
| US11342016B2 (en) | 2022-05-24 |
| US10867652B2 (en) | 2020-12-15 |
| KR102266211B1 (ko) | 2021-06-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication |