DE102017100997A1 - Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers - Google Patents

Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers Download PDF

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Publication number
DE102017100997A1
DE102017100997A1 DE102017100997.3A DE102017100997A DE102017100997A1 DE 102017100997 A1 DE102017100997 A1 DE 102017100997A1 DE 102017100997 A DE102017100997 A DE 102017100997A DE 102017100997 A1 DE102017100997 A1 DE 102017100997A1
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Prior art keywords
semiconductor laser
optical element
diffractive optical
semiconductor
optically active
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DE102017100997.3A
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German (de)
English (en)
Inventor
Hubert Halbritter
Andreas Plössl
Roland Heinrich Enzmann
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102017100997.3A priority Critical patent/DE102017100997A1/de
Priority to DE112018000431.7T priority patent/DE112018000431B4/de
Priority to CN202111030865.9A priority patent/CN113872048B/zh
Priority to DE112018008245.8T priority patent/DE112018008245B4/de
Priority to CN201880007155.4A priority patent/CN110192312B/zh
Priority to PCT/EP2018/050459 priority patent/WO2018134086A1/de
Priority to JP2019527306A priority patent/JP6970748B2/ja
Priority to US16/343,989 priority patent/US10797469B2/en
Priority to TW107101877A priority patent/TWI687006B/zh
Publication of DE102017100997A1 publication Critical patent/DE102017100997A1/de
Priority to JP2021177494A priority patent/JP7232883B2/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
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    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE102017100997.3A 2017-01-19 2017-01-19 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers Withdrawn DE102017100997A1 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102017100997.3A DE102017100997A1 (de) 2017-01-19 2017-01-19 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
PCT/EP2018/050459 WO2018134086A1 (de) 2017-01-19 2018-01-09 Halbleiterlaser und verfahren zur herstellung eines solchen halbleiterlasers
CN202111030865.9A CN113872048B (zh) 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法
DE112018008245.8T DE112018008245B4 (de) 2017-01-19 2018-01-09 Halbleiterlaser und verfahren zur herstellung eines solchen halbleiterlasers
CN201880007155.4A CN110192312B (zh) 2017-01-19 2018-01-09 半导体激光器和用于制造这种半导体激光器的方法
DE112018000431.7T DE112018000431B4 (de) 2017-01-19 2018-01-09 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
JP2019527306A JP6970748B2 (ja) 2017-01-19 2018-01-09 半導体レーザおよびそのような半導体レーザの製造方法
US16/343,989 US10797469B2 (en) 2017-01-19 2018-01-09 Semiconductor laser and method for producing such a semiconductor laser
TW107101877A TWI687006B (zh) 2017-01-19 2018-01-18 半導體雷射及此種半導體雷射之製造方法
JP2021177494A JP7232883B2 (ja) 2017-01-19 2021-10-29 半導体レーザおよびそのような半導体レーザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102017100997.3A DE102017100997A1 (de) 2017-01-19 2017-01-19 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers

Publications (1)

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DE102017100997A1 true DE102017100997A1 (de) 2018-07-19

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DE102017100997.3A Withdrawn DE102017100997A1 (de) 2017-01-19 2017-01-19 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
DE112018008245.8T Active DE112018008245B4 (de) 2017-01-19 2018-01-09 Halbleiterlaser und verfahren zur herstellung eines solchen halbleiterlasers
DE112018000431.7T Active DE112018000431B4 (de) 2017-01-19 2018-01-09 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers

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DE112018008245.8T Active DE112018008245B4 (de) 2017-01-19 2018-01-09 Halbleiterlaser und verfahren zur herstellung eines solchen halbleiterlasers
DE112018000431.7T Active DE112018000431B4 (de) 2017-01-19 2018-01-09 Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers

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US (1) US10797469B2 (https=)
JP (2) JP6970748B2 (https=)
CN (2) CN110192312B (https=)
DE (3) DE102017100997A1 (https=)
TW (1) TWI687006B (https=)
WO (1) WO2018134086A1 (https=)

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WO2020064892A1 (de) * 2018-09-27 2020-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauelement mit saphirträger und dessen herstellungsverfahren
DE102019100794A1 (de) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Laservorrichtung und verfahren zur herstellung einer laservorrichtung
DE102019104986A1 (de) * 2019-02-27 2020-08-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102020118159A1 (de) 2020-07-09 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laservorrichtung
US11251587B2 (en) 2017-06-02 2022-02-15 Osram Oled Gmbh Laser diode and method for manufacturing a laser diode
US11316084B2 (en) 2017-09-26 2022-04-26 Osram Oled Gmbh Radiation-emitting semiconductor component and method for producing radiation-emitting semiconductor component

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US10535799B2 (en) 2017-05-09 2020-01-14 Epistar Corporation Semiconductor device
CN109845082B (zh) 2017-09-22 2021-01-19 Oppo广东移动通信有限公司 电源提供电路、电源提供设备以及控制方法
US11025033B2 (en) 2019-05-21 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bump bonding structure to mitigate space contamination for III-V dies and CMOS dies
US20220109287A1 (en) * 2020-10-01 2022-04-07 Vixar, Inc. Metalens Array and Vertical Cavity Surface Emitting Laser Systems and Methods
JP2022082100A (ja) * 2020-11-20 2022-06-01 国立大学法人東京工業大学 光偏向デバイス
DE102022103260A1 (de) * 2022-02-11 2023-08-17 Ams-Osram International Gmbh Laserbauelement
FR3146242B1 (fr) * 2023-02-27 2025-02-14 Soitec Silicon On Insulator Structure semi-conductrice pour former des diodes laser a cavite verticale
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WO2018134086A1 (de) 2018-07-26
JP2022009737A (ja) 2022-01-14
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DE112018000431A5 (de) 2019-09-26
US20190245326A1 (en) 2019-08-08

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