DE102016007777A1 - Verfahren mit Porositätseinstellung zur Bildung eines Polierkissens - Google Patents

Verfahren mit Porositätseinstellung zur Bildung eines Polierkissens Download PDF

Info

Publication number
DE102016007777A1
DE102016007777A1 DE102016007777.8A DE102016007777A DE102016007777A1 DE 102016007777 A1 DE102016007777 A1 DE 102016007777A1 DE 102016007777 A DE102016007777 A DE 102016007777A DE 102016007777 A1 DE102016007777 A1 DE 102016007777A1
Authority
DE
Germany
Prior art keywords
pores
polishing pad
surfactant
inner cylindrical
cylindrical chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102016007777.8A
Other languages
German (de)
English (en)
Inventor
Yuhua Tong
Andrew Wank
Diego Lugo
Marc R. Stack
David Michael Veneziale
Marty DeGroot
George C. Jacob
Jeffrey B. Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102016007777A1 publication Critical patent/DE102016007777A1/de
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009—Tools not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
    • B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
    • B29C41/12—Spreading-out the material on a substrate, e.g. on the surface of a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/736—Grinding or polishing equipment

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102016007777.8A 2015-06-26 2016-06-24 Verfahren mit Porositätseinstellung zur Bildung eines Polierkissens Withdrawn DE102016007777A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/751,328 US10005172B2 (en) 2015-06-26 2015-06-26 Controlled-porosity method for forming polishing pad
US14/751,328 2015-06-26

Publications (1)

Publication Number Publication Date
DE102016007777A1 true DE102016007777A1 (de) 2016-12-29

Family

ID=57537555

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016007777.8A Withdrawn DE102016007777A1 (de) 2015-06-26 2016-06-24 Verfahren mit Porositätseinstellung zur Bildung eines Polierkissens

Country Status (7)

Country Link
US (1) US10005172B2 (enExample)
JP (1) JP6870927B2 (enExample)
KR (1) KR102514354B1 (enExample)
CN (1) CN107695903B (enExample)
DE (1) DE102016007777A1 (enExample)
FR (1) FR3037833B1 (enExample)
TW (1) TWI704976B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10144115B2 (en) 2015-06-26 2018-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US9776300B2 (en) 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
US10092998B2 (en) 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US10086494B2 (en) * 2016-09-13 2018-10-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High planarization efficiency chemical mechanical polishing pads and methods of making
US10208154B2 (en) 2016-11-30 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Formulations for chemical mechanical polishing pads and CMP pads made therewith
TWI642516B (zh) * 2017-10-02 2018-12-01 智勝科技股份有限公司 研磨墊以及研磨方法
US10464187B2 (en) * 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
US20230390970A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314029B2 (en) 2007-03-27 2012-11-20 Toyo Tire & Rubber Co., Ltd. Process for producing polyurethane foam

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1916330A1 (de) 1969-03-29 1970-10-08 Richard Zippel & Co Kg Farbspr Anlage zur Herstellung von grossen oder kompliziert geformten Formteilen aus fluessigen Mehrkomponenten-Kunststoffen
US3705821A (en) 1970-08-07 1972-12-12 Bayer Ag Process and apparatus for applying polyurethane foam-forming composition
US3954544A (en) 1974-06-20 1976-05-04 Thomas Hooker Foam applying apparatus
DE2538437C3 (de) 1975-08-29 1980-05-08 Elastogran Maschinenbau Gmbh & Co, 8021 Strasslach Mischvorrichtung für Mehrkomponentenkunststoffe mit Poren- oder Zellenstruktur, insbesondere Polyurethan
US4158535A (en) 1977-01-25 1979-06-19 Olin Corporation Generation of polyurethane foam
US5163584A (en) 1990-12-18 1992-11-17 Polyfoam Products, Inc. Method and apparatus for mixing and dispensing foam with injected low pressure gas
US6315820B1 (en) 1999-10-19 2001-11-13 Ford Global Technologies, Inc. Method of manufacturing thin metal alloy foils
WO2001064396A1 (en) * 2000-02-28 2001-09-07 Rodel Holdings, Inc. Polishing pad surface texture formed by solid phase droplets
KR100495404B1 (ko) * 2002-09-17 2005-06-14 한국포리올 주식회사 임베디드 액상 미소요소를 함유하는 연마 패드 및 그 제조방법
US7311862B2 (en) * 2002-10-28 2007-12-25 Cabot Microelectronics Corporation Method for manufacturing microporous CMP materials having controlled pore size
JP3776428B2 (ja) 2002-12-27 2006-05-17 株式会社加平 ポリウレタン発泡体シート及びそれを用いた積層体シートの製造方法
CN1765423A (zh) * 2005-11-07 2006-05-03 四川大学 生物活性多孔支架材料的制备方法
DE102005058292A1 (de) 2005-12-07 2007-06-14 Hennecke Gmbh Verfahren und Vorrichtung zur Herstellung von beschichteten Formteilen
JP5308637B2 (ja) * 2007-07-11 2013-10-09 東洋ゴム工業株式会社 研磨パッド
US20090094900A1 (en) 2007-10-15 2009-04-16 Ppg Industries Ohio, Inc. Method of forming a polyurea polyurethane elastomer containing chemical mechanical polishing pad
US20130012108A1 (en) * 2009-12-22 2013-01-10 Naichao Li Polishing pad and method of making the same
KR101485073B1 (ko) * 2010-09-15 2015-01-22 주식회사 엘지화학 지지 패드용 폴리우레탄 수지 조성물 및 이를 이용한 폴리우레탄 지지 패드
CN102875769A (zh) * 2011-07-15 2013-01-16 株式会社Lg化学 聚氨酯树脂组合物及聚氨酯支撑垫片
US8709114B2 (en) * 2012-03-22 2014-04-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing chemical mechanical polishing layers
US20150038066A1 (en) * 2013-07-31 2015-02-05 Nexplanar Corporation Low density polishing pad
US9421666B2 (en) * 2013-11-04 2016-08-23 Applied Materials, Inc. Printed chemical mechanical polishing pad having abrasives therein
US9993907B2 (en) * 2013-12-20 2018-06-12 Applied Materials, Inc. Printed chemical mechanical polishing pad having printed window
TWM494688U (zh) * 2014-01-09 2015-02-01 Chuang-Mao Wang ３ｄ列印機成型基板

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314029B2 (en) 2007-03-27 2012-11-20 Toyo Tire & Rubber Co., Ltd. Process for producing polyurethane foam

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ASTM-Testverfahren D4274-11

Also Published As

Publication number Publication date
FR3037833A1 (fr) 2016-12-30
US20160375550A1 (en) 2016-12-29
KR20170001624A (ko) 2017-01-04
CN107695903A (zh) 2018-02-16
KR102514354B1 (ko) 2023-03-28
TW201700215A (zh) 2017-01-01
CN107695903B (zh) 2020-02-28
JP2017052077A (ja) 2017-03-16
FR3037833B1 (fr) 2019-09-20
US10005172B2 (en) 2018-06-26
JP6870927B2 (ja) 2021-05-12
TWI704976B (zh) 2020-09-21

Similar Documents

Publication Publication Date Title
DE102016007777A1 (de) Verfahren mit Porositätseinstellung zur Bildung eines Polierkissens
DE102016007767A1 (de) Formulierung für eine verbundpolierschicht für ein chemisch-mechanisches polierkissen
KR102359116B1 (ko) 실리콘 웨이퍼의 화학적 기계적 연마 방법
DE102013018258A1 (de) Weiches und konditionierbares chemisch-mechanisches Polierkissen
DE102007024460B4 (de) Chemisch-mechanisches Polierkissen
DE102016007772A1 (de) Verfahren zur Herstellung einer Verbundpolierschicht für ein chemisch-mechanisches Polierkissen
DE102017008616A1 (de) Chemisch-mechanische Polierkissen mit hoher Planarisierungseffizienz und Verfahren zu deren Herstellung
DE102015003240A1 (de) Chemisch-mechanisches polierkissen mit polierschicht und fenster
DE102015006980A1 (de) Chemisch-Mechanisches Polierverfahren
DE102014007027A1 (de) Weiches und konditionierbares chemisch-mechanisches Fensterpolierkissen
DE102014007024A1 (de) Weicher und konditionierbarer chemisch-mechanischer Polierkissenstapel
DE102014007002A1 (de) Chemisch-mechanischer Mehrschicht-Polierkissenstapel mit weicher und konditionierbarer Polierschicht
DE102016007771A1 (de) Verfahren zur Herstellung einer Polierschicht für ein chemisch-mechanisches Polierkissen
DE102018004452A1 (de) Chemisch-mechanische Polierkissen für eine verbesserte Entfernungsgeschwindigkeit und Planarisierung
DE102015004786A1 (de) Chemisch-mechanisches Polierkissen
DE102016012533A1 (de) Chemisch-mechanisches Polierverfahren
DE102015003200A1 (de) Weiches und konditionierbares chemisch-mechanisches polierkissen mit fenster
DE102015016424A1 (de) CMP-Gießverfahren mit eingestellter Viskosität
DE102015016427A1 (de) Gießverfahren für ein CMP-Kissen mit eingestellter Expansion
US10105825B2 (en) Method of making polishing layer for chemical mechanical polishing pad
DE102015016425A1 (de) Polyurethan-Polierkissen mit hoher Stabilität
DE102022122010A1 (de) Komprimierbares, nicht-netzförmiges polyharnstoff-polierkissen
DE102018003387A1 (de) Verfahren zur Herstellung von chemisch-mechanischen Polierschichten mit verbesserter Einheitlichkeit
DE102016007775A1 (de) Chemisch-mechanisches Polierkissen und Verfahren zu dessen Herstellung
DE102022122023A1 (de) Heterogenes fluorpolymergemisch-polierkissen

Legal Events

Date Code Title Description
R005 Application deemed withdrawn due to failure to request examination