TWI704976B - 孔隙度受控之拋光墊形成法 - Google Patents

孔隙度受控之拋光墊形成法 Download PDF

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Publication number
TWI704976B
TWI704976B TW105118459A TW105118459A TWI704976B TW I704976 B TWI704976 B TW I704976B TW 105118459 A TW105118459 A TW 105118459A TW 105118459 A TW105118459 A TW 105118459A TW I704976 B TWI704976 B TW I704976B
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TW
Taiwan
Prior art keywords
pores
polishing pad
surfactant
liquid polymer
inner cylindrical
Prior art date
Application number
TW105118459A
Other languages
English (en)
Chinese (zh)
Other versions
TW201700215A (zh
Inventor
玉華 童
安德魯 汪克
迪耶戈 盧戈
馬克Ｒ 史塔克
大衛 麥克 凡尼札爾
馬提Ｗ 狄羅特
喬治Ｃ 雅各
傑弗瑞Ｂ 米勒
Original Assignee
美商陶氏全球科技責任有限公司
美商羅門哈斯電子材料Ｃｍｐ控股公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 美商陶氏全球科技責任有限公司, 美商羅門哈斯電子材料Ｃｍｐ控股公司 filed Critical 美商陶氏全球科技責任有限公司
Publication of TW201700215A publication Critical patent/TW201700215A/zh
Application granted granted Critical
Publication of TWI704976B publication Critical patent/TWI704976B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009—Tools not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
    • B29C41/02—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of definite length, i.e. discrete articles
    • B29C41/12—Spreading-out the material on a substrate, e.g. on the surface of a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/736—Grinding or polishing equipment

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW105118459A 2015-06-26 2016-06-13 孔隙度受控之拋光墊形成法 TWI704976B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/751,328 2015-06-26
US14/751,328 US10005172B2 (en) 2015-06-26 2015-06-26 Controlled-porosity method for forming polishing pad

Publications (2)

Publication Number Publication Date
TW201700215A TW201700215A (zh) 2017-01-01
TWI704976B true TWI704976B (zh) 2020-09-21

Family

ID=57537555

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105118459A TWI704976B (zh) 2015-06-26 2016-06-13 孔隙度受控之拋光墊形成法

Country Status (7)

Country Link
US (1) US10005172B2 (enExample)
JP (1) JP6870927B2 (enExample)
KR (1) KR102514354B1 (enExample)
CN (1) CN107695903B (enExample)
DE (1) DE102016007777A1 (enExample)
FR (1) FR3037833B1 (enExample)
TW (1) TWI704976B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9776300B2 (en) 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
US10092998B2 (en) 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US10144115B2 (en) 2015-06-26 2018-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US10086494B2 (en) * 2016-09-13 2018-10-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High planarization efficiency chemical mechanical polishing pads and methods of making
US10208154B2 (en) 2016-11-30 2019-02-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Formulations for chemical mechanical polishing pads and CMP pads made therewith
TWI642516B (zh) * 2017-10-02 2018-12-01 智勝科技股份有限公司 研磨墊以及研磨方法
US10464187B2 (en) * 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
US20230390970A1 (en) * 2022-06-02 2023-12-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making low specific gravity polishing pads

Citations (4)

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TW201130656A (en) * 2009-12-22 2011-09-16 3M Innovative Properties Co Polishing pad and method of making the same
TWM494688U (zh) * 2014-01-09 2015-02-01 Chuang-Mao Wang ３ｄ列印機成型基板
TW201509595A (zh) * 2013-07-31 2015-03-16 Nexplanar Corp 低密度拋光墊
US20150174826A1 (en) * 2013-12-20 2015-06-25 Applied Materials, Inc. Printed chemical mechanical polishing pad having controlled porosity

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Publication number Priority date Publication date Assignee Title
TW201130656A (en) * 2009-12-22 2011-09-16 3M Innovative Properties Co Polishing pad and method of making the same
TW201509595A (zh) * 2013-07-31 2015-03-16 Nexplanar Corp 低密度拋光墊
US20150174826A1 (en) * 2013-12-20 2015-06-25 Applied Materials, Inc. Printed chemical mechanical polishing pad having controlled porosity
TWM494688U (zh) * 2014-01-09 2015-02-01 Chuang-Mao Wang ３ｄ列印機成型基板

Also Published As

Publication number Publication date
US20160375550A1 (en) 2016-12-29
KR102514354B1 (ko) 2023-03-28
CN107695903A (zh) 2018-02-16
JP2017052077A (ja) 2017-03-16
JP6870927B2 (ja) 2021-05-12
FR3037833A1 (fr) 2016-12-30
FR3037833B1 (fr) 2019-09-20
CN107695903B (zh) 2020-02-28
US10005172B2 (en) 2018-06-26
DE102016007777A1 (de) 2016-12-29
TW201700215A (zh) 2017-01-01
KR20170001624A (ko) 2017-01-04

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