DE102016007771A1 - Verfahren zur Herstellung einer Polierschicht für ein chemisch-mechanisches Polierkissen - Google Patents

Verfahren zur Herstellung einer Polierschicht für ein chemisch-mechanisches Polierkissen Download PDF

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Publication number
DE102016007771A1
DE102016007771A1 DE102016007771.9A DE102016007771A DE102016007771A1 DE 102016007771 A1 DE102016007771 A1 DE 102016007771A1 DE 102016007771 A DE102016007771 A DE 102016007771A DE 102016007771 A1 DE102016007771 A1 DE 102016007771A1
Authority
DE
Germany
Prior art keywords
inner cylindrical
cylindrical chamber
pressurized gas
liquid component
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102016007771.9A
Other languages
German (de)
English (en)
Inventor
David Michael Veneziale
Bainian Qian
Teresa Brugarolas Brufau
Julia KOZHUKH
Yuhua Tong
Jeffrey B. Miller
Diego Lugo
George C. Jacob
Marty DeGroot
Andrew Wank
Fengji Yeh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Global Technologies LLC
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Dow Global Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/751,423 external-priority patent/US10105825B2/en
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Dow Global Technologies LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102016007771A1 publication Critical patent/DE102016007771A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009—Tools not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/22—Rubbers synthetic or natural
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polyurethanes Or Polyureas (AREA)
DE102016007771.9A 2015-06-26 2016-06-24 Verfahren zur Herstellung einer Polierschicht für ein chemisch-mechanisches Polierkissen Withdrawn DE102016007771A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/751,423 US10105825B2 (en) 2015-06-26 2015-06-26 Method of making polishing layer for chemical mechanical polishing pad
US14/751,423 2015-06-26
US15/163,213 2016-05-24
US15/163,213 US10144115B2 (en) 2015-06-26 2016-05-24 Method of making polishing layer for chemical mechanical polishing pad

Publications (1)

Publication Number Publication Date
DE102016007771A1 true DE102016007771A1 (de) 2016-12-29

Family

ID=57537134

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102016007771.9A Withdrawn DE102016007771A1 (de) 2015-06-26 2016-06-24 Verfahren zur Herstellung einer Polierschicht für ein chemisch-mechanisches Polierkissen

Country Status (7)

Country Link
US (1) US10144115B2 (enExample)
JP (1) JP6783563B2 (enExample)
KR (1) KR102548640B1 (enExample)
CN (1) CN107695904A (enExample)
DE (1) DE102016007771A1 (enExample)
FR (1) FR3037837B1 (enExample)
TW (1) TWI705992B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10092998B2 (en) 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US9776300B2 (en) 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
TWI642516B (zh) * 2017-10-02 2018-12-01 智勝科技股份有限公司 研磨墊以及研磨方法
KR102674356B1 (ko) * 2019-06-19 2024-06-11 주식회사 쿠라레 연마 패드, 연마 패드의 제조 방법 및 연마 방법
KR102293781B1 (ko) * 2019-11-11 2021-08-25 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법
US11772230B2 (en) * 2021-01-21 2023-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith

Citations (1)

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Publication number Priority date Publication date Assignee Title
US8314029B2 (en) 2007-03-27 2012-11-20 Toyo Tire & Rubber Co., Ltd. Process for producing polyurethane foam

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US3705821A (en) 1970-08-07 1972-12-12 Bayer Ag Process and apparatus for applying polyurethane foam-forming composition
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DE2538437C3 (de) 1975-08-29 1980-05-08 Elastogran Maschinenbau Gmbh & Co, 8021 Strasslach Mischvorrichtung für Mehrkomponentenkunststoffe mit Poren- oder Zellenstruktur, insbesondere Polyurethan
US4158535A (en) 1977-01-25 1979-06-19 Olin Corporation Generation of polyurethane foam
US5110081A (en) * 1990-09-26 1992-05-05 Lang Jr William O Vibration-isolating mount
US5163584A (en) 1990-12-18 1992-11-17 Polyfoam Products, Inc. Method and apparatus for mixing and dispensing foam with injected low pressure gas
US6315820B1 (en) 1999-10-19 2001-11-13 Ford Global Technologies, Inc. Method of manufacturing thin metal alloy foils
US7214757B2 (en) * 2000-03-09 2007-05-08 Eastman Kodak Company Polyurethane elastomers and shaped articles prepared therefrom
CN1318469C (zh) * 2002-11-18 2007-05-30 东省A&T株式会社 具有微孔的聚氨酯泡沫的制备方法和由此获得的抛光垫
JP3776428B2 (ja) 2002-12-27 2006-05-17 株式会社加平 ポリウレタン発泡体シート及びそれを用いた積層体シートの製造方法
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
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US10105825B2 (en) 2015-06-26 2018-10-23 Rohm and Haas Electronics Materials CMP Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US9776300B2 (en) 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
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Also Published As

Publication number Publication date
KR102548640B1 (ko) 2023-06-28
JP6783563B2 (ja) 2020-11-11
FR3037837B1 (fr) 2020-05-22
US10144115B2 (en) 2018-12-04
FR3037837A1 (enExample) 2016-12-30
KR20170001625A (ko) 2017-01-04
JP2017013224A (ja) 2017-01-19
TW201700557A (zh) 2017-01-01
TWI705992B (zh) 2020-10-01
US20160375555A1 (en) 2016-12-29
CN107695904A (zh) 2018-02-16

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