KR102548640B1 - 화학적 기계적 연마 패드용 연마층의 제조 방법 - Google Patents

화학적 기계적 연마 패드용 연마층의 제조 방법 Download PDF

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Publication number
KR102548640B1
KR102548640B1 KR1020160078654A KR20160078654A KR102548640B1 KR 102548640 B1 KR102548640 B1 KR 102548640B1 KR 1020160078654 A KR1020160078654 A KR 1020160078654A KR 20160078654 A KR20160078654 A KR 20160078654A KR 102548640 B1 KR102548640 B1 KR 102548640B1
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South Korea
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cylindrical chamber
inner cylindrical
supply port
liquid component
pressurized gas
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KR20170001625A (ko
Inventor
데이비드 미카엘 베네지알레
바이니안 퀴안
테레사 브루갈로라스 브루파우
줄리아 코주크
유화 통
제프리 비. 밀러
디에고 루고
조지 씨. 제이콥
마티 더블유. 디그루트
앤드류 완크
펭지 예
Original Assignee
다우 글로벌 테크놀로지스 엘엘씨
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
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Priority claimed from US14/751,423 external-priority patent/US10105825B2/en
Application filed by 다우 글로벌 테크놀로지스 엘엘씨, 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 filed Critical 다우 글로벌 테크놀로지스 엘엘씨
Publication of KR20170001625A publication Critical patent/KR20170001625A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/009—Tools not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/22—Rubbers synthetic or natural
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polyurethanes Or Polyureas (AREA)
KR1020160078654A 2015-06-26 2016-06-23 화학적 기계적 연마 패드용 연마층의 제조 방법 Active KR102548640B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/751,423 US10105825B2 (en) 2015-06-26 2015-06-26 Method of making polishing layer for chemical mechanical polishing pad
US14/751,423 2015-06-26
US15/163,213 US10144115B2 (en) 2015-06-26 2016-05-24 Method of making polishing layer for chemical mechanical polishing pad
US15/163,213 2016-05-24

Publications (2)

Publication Number Publication Date
KR20170001625A KR20170001625A (ko) 2017-01-04
KR102548640B1 true KR102548640B1 (ko) 2023-06-28

Family

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KR1020160078654A Active KR102548640B1 (ko) 2015-06-26 2016-06-23 화학적 기계적 연마 패드용 연마층의 제조 방법

Country Status (7)

Country Link
US (1) US10144115B2 (enExample)
JP (1) JP6783563B2 (enExample)
KR (1) KR102548640B1 (enExample)
CN (1) CN107695904A (enExample)
DE (1) DE102016007771A1 (enExample)
FR (1) FR3037837B1 (enExample)
TW (1) TWI705992B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9776300B2 (en) 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
US10092998B2 (en) 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
TWI642516B (zh) * 2017-10-02 2018-12-01 智勝科技股份有限公司 研磨墊以及研磨方法
JP7514234B2 (ja) * 2019-06-19 2024-07-10 株式会社クラレ 研磨パッド、研磨パッドの製造方法及び研磨方法
KR102293781B1 (ko) * 2019-11-11 2021-08-25 에스케이씨솔믹스 주식회사 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법
US11772230B2 (en) * 2021-01-21 2023-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Formulations for high porosity chemical mechanical polishing pads with high hardness and CMP pads made therewith

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JP2006502300A (ja) 2002-11-18 2006-01-19 ドン ソン エイ アンド ティ カンパニー リミテッド 微細気孔が含まれたポリウレタン発泡体の製造方法及びそれから製造された研磨パッド
JP2013535810A (ja) * 2010-07-08 2013-09-12 ネクスプラナー コーポレイション 半導体基板を研磨するための軟質研磨パッド
JP2014233834A (ja) * 2013-05-31 2014-12-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 軟質かつコンディショニング可能な化学機械ウィンドウ研磨パッド

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US3705821A (en) 1970-08-07 1972-12-12 Bayer Ag Process and apparatus for applying polyurethane foam-forming composition
US3954544A (en) 1974-06-20 1976-05-04 Thomas Hooker Foam applying apparatus
DE2538437C3 (de) 1975-08-29 1980-05-08 Elastogran Maschinenbau Gmbh & Co, 8021 Strasslach Mischvorrichtung für Mehrkomponentenkunststoffe mit Poren- oder Zellenstruktur, insbesondere Polyurethan
US4158535A (en) 1977-01-25 1979-06-19 Olin Corporation Generation of polyurethane foam
US5110081A (en) * 1990-09-26 1992-05-05 Lang Jr William O Vibration-isolating mount
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US9776300B2 (en) 2015-06-26 2017-10-03 Rohm And Haas Electronic Materials Cmp Holdings Inc. Chemical mechanical polishing pad and method of making same
US9586305B2 (en) 2015-06-26 2017-03-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad and method of making same
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US10092998B2 (en) 2015-06-26 2018-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of making composite polishing layer for chemical mechanical polishing pad
US10005172B2 (en) 2015-06-26 2018-06-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Controlled-porosity method for forming polishing pad
US9630293B2 (en) 2015-06-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad composite polishing layer formulation
US10105825B2 (en) 2015-06-26 2018-10-23 Rohm and Haas Electronics Materials CMP Holdings, Inc. Method of making polishing layer for chemical mechanical polishing pad
US9457449B1 (en) 2015-06-26 2016-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with composite polishing layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006502300A (ja) 2002-11-18 2006-01-19 ドン ソン エイ アンド ティ カンパニー リミテッド 微細気孔が含まれたポリウレタン発泡体の製造方法及びそれから製造された研磨パッド
JP2013535810A (ja) * 2010-07-08 2013-09-12 ネクスプラナー コーポレイション 半導体基板を研磨するための軟質研磨パッド
JP2014233834A (ja) * 2013-05-31 2014-12-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 軟質かつコンディショニング可能な化学機械ウィンドウ研磨パッド

Also Published As

Publication number Publication date
JP2017013224A (ja) 2017-01-19
DE102016007771A1 (de) 2016-12-29
KR20170001625A (ko) 2017-01-04
TW201700557A (zh) 2017-01-01
US10144115B2 (en) 2018-12-04
JP6783563B2 (ja) 2020-11-11
FR3037837A1 (enExample) 2016-12-30
US20160375555A1 (en) 2016-12-29
CN107695904A (zh) 2018-02-16
FR3037837B1 (fr) 2020-05-22
TWI705992B (zh) 2020-10-01

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