DE102016006651A1 - Schaltvorrichtung mit spannungsgesteuerter magnetanisotropie, die einen externen ferromagnetischen vormagnetisierungsfilm verwendet - Google Patents

Schaltvorrichtung mit spannungsgesteuerter magnetanisotropie, die einen externen ferromagnetischen vormagnetisierungsfilm verwendet Download PDF

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Publication number
DE102016006651A1
DE102016006651A1 DE102016006651.2A DE102016006651A DE102016006651A1 DE 102016006651 A1 DE102016006651 A1 DE 102016006651A1 DE 102016006651 A DE102016006651 A DE 102016006651A DE 102016006651 A1 DE102016006651 A1 DE 102016006651A1
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layer
ferromagnetic layer
magnet
ferromagnetic
substrate
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DE102016006651.2A
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German (de)
English (en)
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Jordan A. Katine
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SanDisk Technologies LLC
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HGST Netherlands BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
DE102016006651.2A 2015-06-02 2016-06-02 Schaltvorrichtung mit spannungsgesteuerter magnetanisotropie, die einen externen ferromagnetischen vormagnetisierungsfilm verwendet Ceased DE102016006651A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/728,788 2015-06-02
US14/728,788 US9620562B2 (en) 2015-06-02 2015-06-02 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film

Publications (1)

Publication Number Publication Date
DE102016006651A1 true DE102016006651A1 (de) 2016-12-08

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DE102016006651.2A Ceased DE102016006651A1 (de) 2015-06-02 2016-06-02 Schaltvorrichtung mit spannungsgesteuerter magnetanisotropie, die einen externen ferromagnetischen vormagnetisierungsfilm verwendet

Country Status (8)

Country Link
US (1) US9620562B2 (enExample)
JP (1) JP2016225633A (enExample)
KR (1) KR101869149B1 (enExample)
CN (1) CN106374035B (enExample)
DE (1) DE102016006651A1 (enExample)
FR (1) FR3037185B1 (enExample)
GB (1) GB2539102B (enExample)
TW (1) TWI602331B (enExample)

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US9978931B2 (en) 2015-02-13 2018-05-22 Inston Inc. Systems and methods for implementing robust magnetoelectric junctions
US20170033281A1 (en) * 2015-07-29 2017-02-02 Inston Inc. Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components
WO2018005699A1 (en) 2016-06-28 2018-01-04 Inston Inc. Systems for implementing word line pulse techniques in magnetoelectric junctions
JP6820572B2 (ja) * 2017-04-28 2021-01-27 国立研究開発法人産業技術総合研究所 磁気記憶装置
US10460786B2 (en) 2017-06-27 2019-10-29 Inston, Inc. Systems and methods for reducing write error rate in magnetoelectric random access memory through pulse sharpening and reverse pulse schemes
US10861527B2 (en) 2017-06-27 2020-12-08 Inston, Inc. Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory
JP2019057601A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 磁気記憶装置
US10593866B2 (en) * 2018-06-27 2020-03-17 Globalfoundries Singapore Pte. Ltd. Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
JP7005452B2 (ja) * 2018-07-30 2022-01-21 株式会社東芝 磁気記憶装置
US10636962B2 (en) 2018-08-21 2020-04-28 Qualcomm Incorporated Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data
US11195991B2 (en) * 2018-09-27 2021-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory assisted devices and methods of making
EP3671874B1 (en) 2018-12-21 2022-06-22 IMEC vzw Zero-field switching for sot technology
CN110061127B (zh) * 2019-05-20 2023-08-08 中国科学院微电子研究所 磁隧道结的形成方法及磁阻式随机存储器
CN112310274A (zh) * 2019-07-31 2021-02-02 中电海康集团有限公司 自旋轨道矩磁性存储单元及其制备方法
US11069390B2 (en) * 2019-09-06 2021-07-20 Wisconsin Alumni Research Foundation Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
WO2022046237A1 (en) * 2020-08-27 2022-03-03 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US12093812B2 (en) 2020-10-02 2024-09-17 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
US11729996B2 (en) 2021-07-30 2023-08-15 International Business Machines Corporation High retention eMRAM using VCMA-assisted writing
JP2023074096A (ja) * 2021-11-17 2023-05-29 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果メモリ、メモリアレイ及びメモリシステム
US12471497B2 (en) 2022-01-25 2025-11-11 International Business Machines Corporation Magnetic tunnel junction device with magnetoelectric assist
US20230298646A1 (en) * 2022-03-21 2023-09-21 International Business Machines Corporation Deterministic voltage-controlled magnetic anisotropy (vcma) mram with spin-transfer torque (stt) mram assistance
WO2025074925A1 (ja) * 2023-10-03 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 記憶装置および電子機器

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Publication number Publication date
KR101869149B1 (ko) 2018-06-19
JP2016225633A (ja) 2016-12-28
FR3037185B1 (fr) 2019-10-25
US20160358973A1 (en) 2016-12-08
TWI602331B (zh) 2017-10-11
US9620562B2 (en) 2017-04-11
GB2539102A (en) 2016-12-07
KR20160142255A (ko) 2016-12-12
CN106374035B (zh) 2019-11-26
GB201609565D0 (en) 2016-07-13
GB2539102B (en) 2019-09-11
TW201705568A (zh) 2017-02-01
FR3037185A1 (enExample) 2016-12-09
CN106374035A (zh) 2017-02-01

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