FR3037185A1 - - Google Patents

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Publication number
FR3037185A1
FR3037185A1 FR1654982A FR1654982A FR3037185A1 FR 3037185 A1 FR3037185 A1 FR 3037185A1 FR 1654982 A FR1654982 A FR 1654982A FR 1654982 A FR1654982 A FR 1654982A FR 3037185 A1 FR3037185 A1 FR 3037185A1
Authority
FR
France
Prior art keywords
layer
ferromagnetic layer
magnet
ferromagnetic
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1654982A
Other languages
English (en)
French (fr)
Other versions
FR3037185B1 (fr
Inventor
Jordan A Katine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Western Digital Technologies Inc
Original Assignee
HGST Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HGST Netherlands BV filed Critical HGST Netherlands BV
Publication of FR3037185A1 publication Critical patent/FR3037185A1/fr
Application granted granted Critical
Publication of FR3037185B1 publication Critical patent/FR3037185B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
FR1654982A 2015-06-02 2016-06-01 Dispositif a commutation d'anisotropie magnetique commande en tension utilisant un film de polarisation ferromagnetique externe. Expired - Fee Related FR3037185B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14728788 2015-06-02
US14/728,788 US9620562B2 (en) 2015-06-02 2015-06-02 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film

Publications (2)

Publication Number Publication Date
FR3037185A1 true FR3037185A1 (enExample) 2016-12-09
FR3037185B1 FR3037185B1 (fr) 2019-10-25

Family

ID=56410819

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1654982A Expired - Fee Related FR3037185B1 (fr) 2015-06-02 2016-06-01 Dispositif a commutation d'anisotropie magnetique commande en tension utilisant un film de polarisation ferromagnetique externe.

Country Status (8)

Country Link
US (1) US9620562B2 (enExample)
JP (1) JP2016225633A (enExample)
KR (1) KR101869149B1 (enExample)
CN (1) CN106374035B (enExample)
DE (1) DE102016006651A1 (enExample)
FR (1) FR3037185B1 (enExample)
GB (1) GB2539102B (enExample)
TW (1) TWI602331B (enExample)

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US10103317B2 (en) 2015-01-05 2018-10-16 Inston, Inc. Systems and methods for implementing efficient magnetoelectric junctions
US10217798B2 (en) 2015-01-13 2019-02-26 Inston, Inc. Systems and methods for implementing select devices constructed from 2D materials
US9978931B2 (en) 2015-02-13 2018-05-22 Inston Inc. Systems and methods for implementing robust magnetoelectric junctions
US20170033281A1 (en) * 2015-07-29 2017-02-02 Inston Inc. Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components
WO2018005699A1 (en) 2016-06-28 2018-01-04 Inston Inc. Systems for implementing word line pulse techniques in magnetoelectric junctions
US10998490B2 (en) 2017-04-28 2021-05-04 National Institute Of Advanced Industrial Science And Technology Magnetic element
US10861527B2 (en) 2017-06-27 2020-12-08 Inston, Inc. Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory
WO2019006037A1 (en) 2017-06-27 2019-01-03 Inston, Inc. REDUCTION OF WRITE ERROR RATE IN MAGNETOELECTRIC RAM
JP2019057601A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 磁気記憶装置
US10593866B2 (en) * 2018-06-27 2020-03-17 Globalfoundries Singapore Pte. Ltd. Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
JP7005452B2 (ja) * 2018-07-30 2022-01-21 株式会社東芝 磁気記憶装置
US10636962B2 (en) 2018-08-21 2020-04-28 Qualcomm Incorporated Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data
US11195991B2 (en) * 2018-09-27 2021-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory assisted devices and methods of making
EP3671874B1 (en) 2018-12-21 2022-06-22 IMEC vzw Zero-field switching for sot technology
CN110061127B (zh) * 2019-05-20 2023-08-08 中国科学院微电子研究所 磁隧道结的形成方法及磁阻式随机存储器
CN112310274A (zh) * 2019-07-31 2021-02-02 中电海康集团有限公司 自旋轨道矩磁性存储单元及其制备方法
US11069390B2 (en) * 2019-09-06 2021-07-20 Wisconsin Alumni Research Foundation Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
WO2022046237A1 (en) * 2020-08-27 2022-03-03 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US12093812B2 (en) 2020-10-02 2024-09-17 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
US11729996B2 (en) 2021-07-30 2023-08-15 International Business Machines Corporation High retention eMRAM using VCMA-assisted writing
JP2023074096A (ja) * 2021-11-17 2023-05-29 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果メモリ、メモリアレイ及びメモリシステム
US12471497B2 (en) 2022-01-25 2025-11-11 International Business Machines Corporation Magnetic tunnel junction device with magnetoelectric assist
US12620426B2 (en) * 2022-03-21 2026-05-05 International Business Machines Corporation Deterministic voltage-controlled magnetic anisotropy (VCMA) MRAM with spin-transfer torque (STT) MRAM assistance
WO2025074925A1 (ja) * 2023-10-03 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 記憶装置および電子機器
CN121454427B (zh) * 2026-01-06 2026-04-10 苏州凌存科技有限公司 电压控制磁各向异性系数的测量方法及测量装置

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US5729410A (en) 1996-11-27 1998-03-17 International Business Machines Corporation Magnetic tunnel junction device with longitudinal biasing
US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
US6114719A (en) 1998-05-29 2000-09-05 International Business Machines Corporation Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
US8755222B2 (en) * 2003-08-19 2014-06-17 New York University Bipolar spin-transfer switching
JP4575136B2 (ja) * 2004-12-20 2010-11-04 株式会社東芝 磁気記録素子、磁気記録装置、および情報の記録方法
US7285836B2 (en) * 2005-03-09 2007-10-23 Maglabs, Inc. Magnetic random access memory with stacked memory cells having oppositely-directed hard-axis biasing
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
US7777261B2 (en) 2005-09-20 2010-08-17 Grandis Inc. Magnetic device having stabilized free ferromagnetic layer
US8058696B2 (en) * 2006-02-25 2011-11-15 Avalanche Technology, Inc. High capacity low cost multi-state magnetic memory
JP2008135432A (ja) * 2006-11-27 2008-06-12 Tdk Corp トンネル磁気抵抗効果素子及びその製造方法
JP2008171882A (ja) * 2007-01-09 2008-07-24 Sony Corp 記憶素子及びメモリ
JP4435189B2 (ja) * 2007-02-15 2010-03-17 株式会社東芝 磁気記憶素子及び磁気記憶装置
FR2914482B1 (fr) * 2007-03-29 2009-05-29 Commissariat Energie Atomique Memoire magnetique a jonction tunnel magnetique
EP2015307B8 (en) * 2007-07-13 2013-05-15 Hitachi Ltd. Magnetoresistive device
JP5077019B2 (ja) * 2008-03-31 2012-11-21 Ｔｄｋ株式会社 磁気記憶装置
US8039913B2 (en) * 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US9728240B2 (en) 2009-04-08 2017-08-08 Avalanche Technology, Inc. Pulse programming techniques for voltage-controlled magnetoresistive tunnel junction (MTJ)
US9196332B2 (en) * 2011-02-16 2015-11-24 Avalanche Technology, Inc. Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
WO2012159078A2 (en) * 2011-05-19 2012-11-22 The Regents Of The University Of California Voltage-controlled magnetic anisotropy (vcma) switch and magneto-electric memory (meram)
US9293694B2 (en) * 2011-11-03 2016-03-22 Ge Yi Magnetoresistive random access memory cell with independently operating read and write components
WO2014022304A1 (en) 2012-07-30 2014-02-06 The Regents Of The University Of California Multiple-bits-per-cell voltage-controlled magnetic memory
CN104704564B (zh) 2012-08-06 2017-05-31 康奈尔大学 磁性纳米结构中基于自旋霍尔扭矩效应的电栅控式三端子电路及装置
US8988923B2 (en) 2012-09-11 2015-03-24 The Regents Of The University Of California Nonvolatile magneto-electric random access memory circuit with burst writing and back-to-back reads
US9036407B2 (en) 2012-12-07 2015-05-19 The Regents Of The University Of California Voltage-controlled magnetic memory element with canted magnetization

Also Published As

Publication number Publication date
US9620562B2 (en) 2017-04-11
CN106374035B (zh) 2019-11-26
FR3037185B1 (fr) 2019-10-25
GB2539102A (en) 2016-12-07
GB2539102B (en) 2019-09-11
GB201609565D0 (en) 2016-07-13
KR101869149B1 (ko) 2018-06-19
CN106374035A (zh) 2017-02-01
US20160358973A1 (en) 2016-12-08
TW201705568A (zh) 2017-02-01
KR20160142255A (ko) 2016-12-12
DE102016006651A1 (de) 2016-12-08
TWI602331B (zh) 2017-10-11
JP2016225633A (ja) 2016-12-28

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Owner name: WESTERN DIGITAL TECHNOLOGIES, INC., US

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