JP5077019B2 - 磁気記憶装置 - Google Patents
磁気記憶装置 Download PDFInfo
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- JP5077019B2 JP5077019B2 JP2008089601A JP2008089601A JP5077019B2 JP 5077019 B2 JP5077019 B2 JP 5077019B2 JP 2008089601 A JP2008089601 A JP 2008089601A JP 2008089601 A JP2008089601 A JP 2008089601A JP 5077019 B2 JP5077019 B2 JP 5077019B2
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- magnetization
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
2 磁気抵抗効果素子
3 磁場印加部
4 電源供給部
21 磁化自由層
22 スペーサ層
23 磁化固定層
Claims (3)
- 磁化固定層、磁化自由層、および前記磁化固定層と前記磁化自由層との間に配設された非磁性スペーサー層を備えた磁気抵抗効果素子と、前記磁化自由層に磁場を印加する磁場印加部と、前記磁化固定層と前記磁化自由層との間に交流電流が重畳された直流電流を供給する電流供給部とを備え、
前記電流供給部は、前記磁気抵抗効果素子についての前記磁化自由層の磁化の固有振動数を含む周波数範囲内で前記交流電流の周波数をスイープさせる磁気記憶装置。 - 前記磁気抵抗効果素子を複数備え、前記電流供給部は、当該各磁気抵抗効果素子についての前記固有振動数を含む周波数範囲内で前記交流電流の周波数をスイープさせる請求項1記載の磁気記憶装置。
- 前記磁場印加部は、永久磁石を備えて構成されて、前記磁場の強さを一定に維持する請求項1または2記載の磁気記憶装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008089601A JP5077019B2 (ja) | 2008-03-31 | 2008-03-31 | 磁気記憶装置 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2008089601A JP5077019B2 (ja) | 2008-03-31 | 2008-03-31 | 磁気記憶装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009245500A JP2009245500A (ja) | 2009-10-22 |
JP5077019B2 true JP5077019B2 (ja) | 2012-11-21 |
Family
ID=41307224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008089601A Active JP5077019B2 (ja) | 2008-03-31 | 2008-03-31 | 磁気記憶装置 |
Country Status (1)
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JP (1) | JP5077019B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106256003B (zh) | 2014-03-13 | 2019-07-05 | 东芝存储器株式会社 | 可变变化存储器及其写入方法 |
US9620562B2 (en) * | 2015-06-02 | 2017-04-11 | Western Digital Technologies, Inc. | Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film |
KR102522620B1 (ko) | 2016-11-29 | 2023-04-19 | 삼성전자주식회사 | 자기 메모리 소자 및 자기 메모리 소자의 쓰기 방법 |
US10916286B2 (en) | 2018-08-17 | 2021-02-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Assisted write method for MRAM testing and field applications |
JP7341926B2 (ja) | 2020-03-11 | 2023-09-11 | 株式会社東芝 | 磁気センサ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007105358A1 (ja) * | 2006-03-02 | 2007-09-20 | Kyoto University | 強磁性ドットのコア回転素子及び強磁性ドットのコア利用情報記憶素子 |
JP2008305827A (ja) * | 2007-06-05 | 2008-12-18 | Fujitsu Ltd | 磁気メモリ及び磁気メモリの書込み方法 |
JP5177487B2 (ja) * | 2007-09-19 | 2013-04-03 | 国立大学法人電気通信大学 | 強磁性ドットのコア反転方法、コアの向き制御方法、強磁性ドットのコア利用素子 |
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2008
- 2008-03-31 JP JP2008089601A patent/JP5077019B2/ja active Active
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Publication number | Publication date |
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JP2009245500A (ja) | 2009-10-22 |
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