CN106374035B - 使用外部铁磁偏置膜的压控磁各向异性切换装置 - Google Patents

使用外部铁磁偏置膜的压控磁各向异性切换装置 Download PDF

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CN106374035B
CN106374035B CN201610826624.8A CN201610826624A CN106374035B CN 106374035 B CN106374035 B CN 106374035B CN 201610826624 A CN201610826624 A CN 201610826624A CN 106374035 B CN106374035 B CN 106374035B
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layer
ferromagnetic
ferromagnetic layer
magnetic
random access
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CN106374035A (zh
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J·A·凯坦
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SanDisk Technologies LLC
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HGST Netherlands BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN201610826624.8A 2015-06-02 2016-06-02 使用外部铁磁偏置膜的压控磁各向异性切换装置 Active CN106374035B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/728,788 2015-06-02
US14/728,788 US9620562B2 (en) 2015-06-02 2015-06-02 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film

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Publication Number Publication Date
CN106374035A CN106374035A (zh) 2017-02-01
CN106374035B true CN106374035B (zh) 2019-11-26

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US (1) US9620562B2 (enExample)
JP (1) JP2016225633A (enExample)
KR (1) KR101869149B1 (enExample)
CN (1) CN106374035B (enExample)
DE (1) DE102016006651A1 (enExample)
FR (1) FR3037185B1 (enExample)
GB (1) GB2539102B (enExample)
TW (1) TWI602331B (enExample)

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US9978931B2 (en) 2015-02-13 2018-05-22 Inston Inc. Systems and methods for implementing robust magnetoelectric junctions
US20170033281A1 (en) * 2015-07-29 2017-02-02 Inston Inc. Systems and Methods for Implementing Magnetoelectric Junctions Including Integrated Magnetization Components
CN109690675B (zh) 2016-06-28 2022-11-04 赢世通股份有限公司 一种可应用于磁电隧道结的新型字线脉冲写入方法
WO2018198713A1 (ja) * 2017-04-28 2018-11-01 国立研究開発法人産業技術総合研究所 磁気素子
US10861527B2 (en) 2017-06-27 2020-12-08 Inston, Inc. Systems and methods for optimizing magnetic torque and pulse shaping for reducing write error rate in magnetoelectric random access memory
WO2019006037A1 (en) 2017-06-27 2019-01-03 Inston, Inc. REDUCTION OF WRITE ERROR RATE IN MAGNETOELECTRIC RAM
JP2019057601A (ja) 2017-09-20 2019-04-11 東芝メモリ株式会社 磁気記憶装置
US10593866B2 (en) * 2018-06-27 2020-03-17 Globalfoundries Singapore Pte. Ltd. Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
JP7005452B2 (ja) * 2018-07-30 2022-01-21 株式会社東芝 磁気記憶装置
US10636962B2 (en) 2018-08-21 2020-04-28 Qualcomm Incorporated Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data
US11195991B2 (en) * 2018-09-27 2021-12-07 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic random access memory assisted devices and methods of making
EP3671874B1 (en) 2018-12-21 2022-06-22 IMEC vzw Zero-field switching for sot technology
CN110061127B (zh) * 2019-05-20 2023-08-08 中国科学院微电子研究所 磁隧道结的形成方法及磁阻式随机存储器
CN112310274A (zh) * 2019-07-31 2021-02-02 中电海康集团有限公司 自旋轨道矩磁性存储单元及其制备方法
US11069390B2 (en) * 2019-09-06 2021-07-20 Wisconsin Alumni Research Foundation Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal
CN111490156A (zh) * 2020-04-21 2020-08-04 浙江驰拓科技有限公司 自旋轨道力矩磁存储器件及其制备方法
WO2022046237A1 (en) * 2020-08-27 2022-03-03 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11276446B1 (en) 2020-08-27 2022-03-15 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US11264562B1 (en) 2020-08-27 2022-03-01 Western Digital Technologies, Inc. Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same
US12093812B2 (en) 2020-10-02 2024-09-17 Sandisk Technologies Llc Ultralow power inference engine with external magnetic field programming assistance
US11729996B2 (en) 2021-07-30 2023-08-15 International Business Machines Corporation High retention eMRAM using VCMA-assisted writing
JP2023074096A (ja) * 2021-11-17 2023-05-29 ソニーセミコンダクタソリューションズ株式会社 磁気抵抗効果メモリ、メモリアレイ及びメモリシステム
US12471497B2 (en) 2022-01-25 2025-11-11 International Business Machines Corporation Magnetic tunnel junction device with magnetoelectric assist
US20230298646A1 (en) * 2022-03-21 2023-09-21 International Business Machines Corporation Deterministic voltage-controlled magnetic anisotropy (vcma) mram with spin-transfer torque (stt) mram assistance
WO2025074925A1 (ja) * 2023-10-03 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 記憶装置および電子機器

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US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
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CN103563000A (zh) * 2011-05-19 2014-02-05 加利福尼亚大学董事会 电压控制的磁各向异性（vcma）开关和电磁存储器（meram）

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US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
US7230845B1 (en) * 2005-07-29 2007-06-12 Grandis, Inc. Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices
CN101345079A (zh) * 2007-07-13 2009-01-14 株式会社日立制作所 磁电阻器件
CN103563000A (zh) * 2011-05-19 2014-02-05 加利福尼亚大学董事会 电压控制的磁各向异性（vcma）开关和电磁存储器（meram）

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TW201705568A (zh) 2017-02-01
TWI602331B (zh) 2017-10-11
FR3037185B1 (fr) 2019-10-25
CN106374035A (zh) 2017-02-01
GB201609565D0 (en) 2016-07-13
KR101869149B1 (ko) 2018-06-19
FR3037185A1 (enExample) 2016-12-09
JP2016225633A (ja) 2016-12-28
KR20160142255A (ko) 2016-12-12
GB2539102B (en) 2019-09-11
US20160358973A1 (en) 2016-12-08
DE102016006651A1 (de) 2016-12-08
GB2539102A (en) 2016-12-07
US9620562B2 (en) 2017-04-11

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