DE102015114177A1 - Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers - Google Patents

Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers Download PDF

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Publication number
DE102015114177A1
DE102015114177A1 DE102015114177.9A DE102015114177A DE102015114177A1 DE 102015114177 A1 DE102015114177 A1 DE 102015114177A1 DE 102015114177 A DE102015114177 A DE 102015114177A DE 102015114177 A1 DE102015114177 A1 DE 102015114177A1
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Germany
Prior art keywords
boron
silicon
type
doping
source material
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Withdrawn
Application number
DE102015114177.9A
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German (de)
English (en)
Inventor
Nico Caspary
Hans-Joachim Schulze
Helmut Öfner
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Infineon Technologies AG
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Infineon Technologies AG
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Publication date
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Priority to DE102015114177.9A priority Critical patent/DE102015114177A1/de
Priority to JP2016164702A priority patent/JP2017063187A/ja
Priority to US15/247,200 priority patent/US20170062568A1/en
Publication of DE102015114177A1 publication Critical patent/DE102015114177A1/de
Priority to US15/820,770 priority patent/US10566424B2/en
Priority to US16/773,225 priority patent/US10957767B2/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/035—Etching a recess in the emitter region 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/045—Manufacture or treatment of PN junction diodes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE102015114177.9A 2015-08-26 2015-08-26 Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers Withdrawn DE102015114177A1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE102015114177.9A DE102015114177A1 (de) 2015-08-26 2015-08-26 Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
JP2016164702A JP2017063187A (ja) 2015-08-26 2016-08-25 半導体デバイス、シリコンウェハ、及びシリコンウェハの製造方法
US15/247,200 US20170062568A1 (en) 2015-08-26 2016-08-25 Semiconductor device, silicon wafer and method of manufacturing a silicon wafer
US15/820,770 US10566424B2 (en) 2015-08-26 2017-11-22 Semiconductor device, silicon wafer and method of manufacturing a silicon wafer
US16/773,225 US10957767B2 (en) 2015-08-26 2020-01-27 Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102015114177.9A DE102015114177A1 (de) 2015-08-26 2015-08-26 Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers

Publications (1)

Publication Number Publication Date
DE102015114177A1 true DE102015114177A1 (de) 2017-03-02

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Family Applications (1)

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DE102015114177.9A Withdrawn DE102015114177A1 (de) 2015-08-26 2015-08-26 Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers

Country Status (3)

Country Link
US (3) US20170062568A1 (https=)
JP (1) JP2017063187A (https=)
DE (1) DE102015114177A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020120933A1 (de) 2020-08-07 2022-02-10 Infineon Technologies Ag Verfahren zum herstellen von cz-siliziumwafern

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
DE102016015475B3 (de) * 2016-12-28 2018-01-11 3-5 Power Electronics GmbH IGBT Halbleiterstruktur
DE212018000097U1 (de) * 2017-01-25 2019-07-31 Rohm Co., Ltd. Halbleitervorrichtung
US10431462B2 (en) * 2017-02-15 2019-10-01 Lam Research Corporation Plasma assisted doping on germanium
JP7173312B2 (ja) 2019-05-16 2022-11-16 富士電機株式会社 半導体装置および半導体装置の製造方法
US11450734B2 (en) * 2019-06-17 2022-09-20 Fuji Electric Co., Ltd. Semiconductor device and fabrication method for semiconductor device
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
JP7215599B2 (ja) 2019-12-18 2023-01-31 富士電機株式会社 半導体装置および半導体装置の製造方法
CN115280471A (zh) 2020-03-13 2022-11-01 三菱电机株式会社 半导体装置及其制造方法
WO2021186944A1 (ja) * 2020-03-17 2021-09-23 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法
JP7834977B2 (ja) 2021-09-15 2026-03-25 富士電機株式会社 半導体装置および製造方法
US12495596B2 (en) 2021-09-15 2025-12-09 Fuji Electric Co., Ltd. Semiconductor device and manufacturing method
US20230112094A1 (en) * 2021-10-11 2023-04-13 Globalwafers Co., Ltd. Modeling thermal donor formation and target resistivity for single crystal silicon ingot production

Citations (3)

* Cited by examiner, † Cited by third party
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DE102012020785A1 (de) * 2012-10-23 2014-04-24 Infineon Technologies Ag Erhöhung der Dotierungseffizienz bei Protonenbestrahlung
DE102013216195A1 (de) * 2013-08-14 2015-02-19 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
DE202015102716U1 (de) * 2014-05-28 2015-06-15 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Siliziumstab

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JPS59190292A (ja) * 1983-04-08 1984-10-29 Shin Etsu Handotai Co Ltd 半導体シリコン単結晶の抵抗率制御方法
JPS61163188A (ja) * 1985-01-14 1986-07-23 Komatsu Denshi Kinzoku Kk シリコン単結晶引上法における不純物のド−プ方法
JP2837903B2 (ja) * 1989-12-27 1998-12-16 新日本製鐵株式会社 シリコン単結晶の製造方法
JP2550739B2 (ja) * 1990-02-23 1996-11-06 住友金属工業株式会社 結晶成長方法
JPH1029894A (ja) * 1996-07-15 1998-02-03 Hitachi Ltd 単結晶シリコンの比抵抗調整方法および単結晶シリコン製造装置
JP2000077350A (ja) 1998-08-27 2000-03-14 Mitsubishi Electric Corp 電力用半導体装置及びその製造方法
JP4618944B2 (ja) * 2001-08-06 2011-01-26 シャープ株式会社 結晶シートの製造装置、および結晶シートの製造方法
JP4380204B2 (ja) * 2003-04-10 2009-12-09 株式会社Ｓｕｍｃｏ シリコン単結晶及び単結晶育成方法
DE102005026408B3 (de) * 2005-06-08 2007-02-01 Infineon Technologies Ag Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone
US7651566B2 (en) 2007-06-27 2010-01-26 Fritz Kirscht Method and system for controlling resistivity in ingots made of compensated feedstock silicon
JP2011093778A (ja) * 2009-09-29 2011-05-12 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハおよびシリコン単結晶の製造方法
US8766413B2 (en) 2009-11-02 2014-07-01 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
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Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
DE102012020785A1 (de) * 2012-10-23 2014-04-24 Infineon Technologies Ag Erhöhung der Dotierungseffizienz bei Protonenbestrahlung
DE102013216195A1 (de) * 2013-08-14 2015-02-19 Infineon Technologies Ag Verfahren zur Nachdotierung einer Halbleiterscheibe
DE202015102716U1 (de) * 2014-05-28 2015-06-15 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Siliziumstab

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020120933A1 (de) 2020-08-07 2022-02-10 Infineon Technologies Ag Verfahren zum herstellen von cz-siliziumwafern

Also Published As

Publication number Publication date
US10566424B2 (en) 2020-02-18
US20180097064A1 (en) 2018-04-05
US10957767B2 (en) 2021-03-23
US20170062568A1 (en) 2017-03-02
US20200161424A1 (en) 2020-05-21
JP2017063187A (ja) 2017-03-30

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