DE102011079382B4 - Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske - Google Patents
Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske Download PDFInfo
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- DE102011079382B4 DE102011079382B4 DE102011079382.8A DE102011079382A DE102011079382B4 DE 102011079382 B4 DE102011079382 B4 DE 102011079382B4 DE 102011079382 A DE102011079382 A DE 102011079382A DE 102011079382 B4 DE102011079382 B4 DE 102011079382B4
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
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- Health & Medical Sciences (AREA)
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- General Health & Medical Sciences (AREA)
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- Theoretical Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011079382.8A DE102011079382B4 (de) | 2011-07-19 | 2011-07-19 | Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske |
| TW101124888A TWI560515B (en) | 2011-07-19 | 2012-07-11 | Method and apparatus for analyzing and for removing a defect of an euv photomask |
| KR1020147004175A KR101668927B1 (ko) | 2011-07-19 | 2012-07-16 | Euv 포토마스크의 결함을 분석하고 제거하기 위한 방법 및 장치 |
| PCT/EP2012/063881 WO2013010976A2 (en) | 2011-07-19 | 2012-07-16 | Method and apparatus for analyzing and for removing a defect of an euv photomask |
| CN201280035818.6A CN103703415B (zh) | 2011-07-19 | 2012-07-16 | 用于分析和去除极紫外光掩模的缺陷的方法和装置 |
| JP2014520624A JP2014521230A (ja) | 2011-07-19 | 2012-07-16 | Euvフォトマスクの欠陥を解析かつ除去する方法及び装置 |
| US14/137,731 US10060947B2 (en) | 2011-07-19 | 2013-12-20 | Method and apparatus for analyzing and for removing a defect of an EUV photomask |
| JP2016029117A JP6342436B2 (ja) | 2011-07-19 | 2016-02-18 | Euvフォトマスクの欠陥を解析かつ除去する方法及び装置 |
| US15/837,657 US20180106831A1 (en) | 2011-07-19 | 2017-12-11 | Method and apparatus for analyzing and for removing a defect of an euv photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011079382.8A DE102011079382B4 (de) | 2011-07-19 | 2011-07-19 | Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102011079382A1 DE102011079382A1 (de) | 2013-01-24 |
| DE102011079382B4 true DE102011079382B4 (de) | 2020-11-12 |
Family
ID=47501920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102011079382.8A Active DE102011079382B4 (de) | 2011-07-19 | 2011-07-19 | Verfahren und Vorrichtung zum Analysieren und zum Beseitigen eines Defekts einer EUV Maske |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US10060947B2 (enExample) |
| JP (2) | JP2014521230A (enExample) |
| KR (1) | KR101668927B1 (enExample) |
| CN (1) | CN103703415B (enExample) |
| DE (1) | DE102011079382B4 (enExample) |
| TW (1) | TWI560515B (enExample) |
| WO (1) | WO2013010976A2 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10384238B2 (en) | 2007-09-17 | 2019-08-20 | Rave Llc | Debris removal in high aspect structures |
| US8953869B2 (en) * | 2012-06-14 | 2015-02-10 | Kla-Tencor Corporation | Apparatus and methods for inspecting extreme ultra violet reticles |
| US9261775B2 (en) | 2013-03-11 | 2016-02-16 | Carl Zeiss Sms Gmbh | Method for analyzing a photomask |
| DE102013225936B4 (de) * | 2013-12-13 | 2021-02-18 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Korrelieren von Abbildungen einer photolithographischen Maske |
| DE102014211362B4 (de) * | 2014-06-13 | 2018-05-09 | Carl Zeiss Smt Gmbh | Verfahren zum Analysieren eines optischen Elements für den EUV-Wellenlängenbereich |
| US9500468B2 (en) | 2014-08-25 | 2016-11-22 | Board Of Trustees Of Michigan State University | Scanning interferometry technique for through-thickness evaluation in multi-layered transparent structures |
| DE102014217907B4 (de) | 2014-09-08 | 2018-12-20 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen einer Maske für den extrem ultra-violetten Wellenlängenbereich und Maske |
| JP6394544B2 (ja) * | 2015-09-04 | 2018-09-26 | 信越化学工業株式会社 | フォトマスクブランクの欠陥検査方法、選別方法及び製造方法 |
| JP6546826B2 (ja) * | 2015-10-08 | 2019-07-17 | 株式会社日立パワーソリューションズ | 欠陥検査方法、及びその装置 |
| DE102016203094B4 (de) * | 2016-02-26 | 2022-02-10 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum dauerhaften Reparieren von Defekten fehlenden Materials einer photolithographischen Maske |
| DE102016205941B4 (de) * | 2016-04-08 | 2020-11-05 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Analysieren eines Defekts einer fotolithographischen Maske oder eines Wafers |
| TWI770024B (zh) * | 2016-05-20 | 2022-07-11 | 美商瑞弗股份有限公司 | 決定粒子及從基板移除之粒子的組成物的方法 |
| US10082470B2 (en) * | 2016-09-27 | 2018-09-25 | Kla-Tencor Corporation | Defect marking for semiconductor wafer inspection |
| DE102016224690B4 (de) * | 2016-12-12 | 2020-07-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen eines Elements einer photolithographischen Maske für den EUV-Bereich |
| DE102017203841B4 (de) | 2017-03-08 | 2025-07-17 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Ermitteln einer Reparaturform zum Bearbeiten eines Defekts einer photolithographischen Maske |
| DE102017203879B4 (de) * | 2017-03-09 | 2023-06-07 | Carl Zeiss Smt Gmbh | Verfahren zum Analysieren einer defekten Stelle einer photolithographischen Maske |
| DE102017205629B4 (de) | 2017-04-03 | 2024-10-31 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren von Defekten einer photolithographischen Maske für den EUV-Bereich |
| TWI755453B (zh) * | 2017-05-18 | 2022-02-21 | 美商克萊譚克公司 | 鑑定一光微影光罩合格性之方法及系統 |
| US10748272B2 (en) * | 2017-05-18 | 2020-08-18 | Applied Materials Israel Ltd. | Measuring height difference in patterns on semiconductor wafers |
| JP2018205458A (ja) * | 2017-06-01 | 2018-12-27 | 凸版印刷株式会社 | Euvブランク及びeuvマスクの欠陥検査装置、欠陥検査方法、euvマスクの製造方法 |
| DE102017211957A1 (de) | 2017-07-12 | 2019-01-17 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Untersuchen einer Messspitze eines Rastersondenmikroskops |
| KR102370458B1 (ko) | 2017-07-21 | 2022-03-04 | 칼 짜이스 에스엠티 게엠베하 | 포토리소그래피 마스크의 과잉 재료의 폐기를 위한 방법 및 장치 |
| DE102017212848A1 (de) * | 2017-07-26 | 2019-01-31 | Carl Zeiss Sms Ltd. | Verfahren und Vorrichtung zum Kompensieren von Defekten eines Maskenrohlings |
| US20190056651A1 (en) * | 2017-08-21 | 2019-02-21 | Globalfoundries Inc. | Euv patterning using photomask substrate topography |
| DE102017215995B4 (de) * | 2017-09-11 | 2021-05-12 | Carl Zeiss Smt Gmbh | Verfahren zur Untersuchung von photolithographischen Masken |
| US10997706B2 (en) * | 2017-09-29 | 2021-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reticle backside inspection method |
| DE102017220872B4 (de) * | 2017-11-22 | 2022-02-03 | Carl Zeiss Smt Gmbh | Verfahren und System zur Qualifizierung einer Maske für die Mikrolithographie |
| KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| DE102018207880A1 (de) * | 2018-05-18 | 2019-11-21 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Bewerten einer unbekannten Auswirkung von Defekten eines Elements eines Photolithographieprozesses |
| DE102018207882A1 (de) | 2018-05-18 | 2019-11-21 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zur Analyse eines Elements eines Photolithographieprozesses mit Hilfe eines Transformationsmodells |
| DE102018114005A1 (de) * | 2018-06-12 | 2019-12-12 | Carl Zeiss Jena Gmbh | Materialprüfung von optischen Prüflingen |
| US11367783B2 (en) | 2018-08-17 | 2022-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device |
| US10866197B2 (en) * | 2018-09-20 | 2020-12-15 | KLA Corp. | Dispositioning defects detected on extreme ultraviolet photomasks |
| DE102018218129B4 (de) * | 2018-10-23 | 2023-10-12 | Carl Zeiss Sms Ltd. | Verfahren zum Bestimmen von Positionen einer Vielzahl von Pixeln, die in ein Substrat einer photolithographischen Maske eingebracht werden sollen |
| US10824080B2 (en) | 2018-10-31 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to reduce native defect printability |
| EP3770652A1 (en) * | 2019-07-23 | 2021-01-27 | ETH Zurich | Diffractive optical element |
| TWI743565B (zh) * | 2019-09-24 | 2021-10-21 | 美商微相科技股份有限公司 | 用於euv微影製程之光罩表面檢測方法及其光罩組件 |
| US11119404B2 (en) * | 2019-10-10 | 2021-09-14 | Kla Corporation | System and method for reducing printable defects on extreme ultraviolet pattern masks |
| DE102020201482B4 (de) | 2020-02-06 | 2024-06-27 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich |
| DE102020208883B4 (de) | 2020-07-16 | 2023-06-15 | Carl Zeiss Smt Gmbh | Verfahren und Computerprogramm zur Reparatur einer Maske für die Lithographie |
| DE102020208980A1 (de) * | 2020-07-17 | 2022-01-20 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zum Reparieren eines Defekts einer lithographischen Maske |
| CN112632889B (zh) * | 2020-12-17 | 2022-10-14 | 上海集成电路装备材料产业创新中心有限公司 | 一种改善鳍式器件衬底图形不平坦对光刻聚焦影响的方法 |
| KR20220127004A (ko) | 2021-03-10 | 2022-09-19 | 삼성전자주식회사 | 확률론적 콘투어 예측 시스템 및 확률론적 콘투어 예측 시스템의 제공 방법 및 확률론적 콘투어 예측 시스템을 이용한 EUV(Extreme Ultra violet) 마스크의 제공 방법 |
| DE102021203075A1 (de) | 2021-03-26 | 2022-09-29 | Carl Zeiss Smt Gmbh | Verfahren, vorrichtung und computerprogramm zur reparatur eines maskendefekts |
| US20230306579A1 (en) * | 2022-03-28 | 2023-09-28 | Intel Corporation | Registration metrology tool using darkfield and phase contrast imaging |
| JP2024025232A (ja) | 2022-08-10 | 2024-02-26 | キオクシア株式会社 | 検査装置および検査方法 |
| DE102023130586A1 (de) * | 2023-11-06 | 2025-05-08 | Carl Zeiss Smt Gmbh | Verfahren zum Untersuchen eines Rohlings einer Photomaske für die Mikrolithographie |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011161243A1 (en) * | 2010-06-23 | 2011-12-29 | Carl Zeiss Sms Gmbh | Method and apparatus for analyzing and / or repairing of an euv mask defect |
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| JPH0621783B2 (ja) * | 1986-04-21 | 1994-03-23 | 三菱重工業株式会社 | 機械部品の疲労・余寿命評価法 |
| US6235434B1 (en) | 1998-12-08 | 2001-05-22 | Euv Llc | Method for mask repair using defect compensation |
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-
2011
- 2011-07-19 DE DE102011079382.8A patent/DE102011079382B4/de active Active
-
2012
- 2012-07-11 TW TW101124888A patent/TWI560515B/zh active
- 2012-07-16 KR KR1020147004175A patent/KR101668927B1/ko active Active
- 2012-07-16 WO PCT/EP2012/063881 patent/WO2013010976A2/en not_active Ceased
- 2012-07-16 CN CN201280035818.6A patent/CN103703415B/zh active Active
- 2012-07-16 JP JP2014520624A patent/JP2014521230A/ja active Pending
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2013
- 2013-12-20 US US14/137,731 patent/US10060947B2/en active Active
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2016
- 2016-02-18 JP JP2016029117A patent/JP6342436B2/ja active Active
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2017
- 2017-12-11 US US15/837,657 patent/US20180106831A1/en not_active Abandoned
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011161243A1 (en) * | 2010-06-23 | 2011-12-29 | Carl Zeiss Sms Gmbh | Method and apparatus for analyzing and / or repairing of an euv mask defect |
Non-Patent Citations (1)
| Title |
|---|
| Jonckheere, R.; [u.a.]: Evidence of printing blank-related defects on EUV masks, missed by blank inspection. In: Proceedings of SPIE, Vol. 7985, 2010, S.79850W-1-10 * |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011079382A1 (de) | 2013-01-24 |
| WO2013010976A2 (en) | 2013-01-24 |
| US20140165236A1 (en) | 2014-06-12 |
| US20180106831A1 (en) | 2018-04-19 |
| US10060947B2 (en) | 2018-08-28 |
| CN103703415A (zh) | 2014-04-02 |
| CN103703415B (zh) | 2016-11-09 |
| TWI560515B (en) | 2016-12-01 |
| JP6342436B2 (ja) | 2018-06-13 |
| KR101668927B1 (ko) | 2016-10-24 |
| JP2016103041A (ja) | 2016-06-02 |
| TW201310165A (zh) | 2013-03-01 |
| WO2013010976A3 (en) | 2013-03-14 |
| KR20140056279A (ko) | 2014-05-09 |
| JP2014521230A (ja) | 2014-08-25 |
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