DE102010014667A1 - Leuchtdiodenchip mit Stromaufweitungsschicht - Google Patents

Leuchtdiodenchip mit Stromaufweitungsschicht Download PDF

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Publication number
DE102010014667A1
DE102010014667A1 DE102010014667A DE102010014667A DE102010014667A1 DE 102010014667 A1 DE102010014667 A1 DE 102010014667A1 DE 102010014667 A DE102010014667 A DE 102010014667A DE 102010014667 A DE102010014667 A DE 102010014667A DE 102010014667 A1 DE102010014667 A1 DE 102010014667A1
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DE
Germany
Prior art keywords
layer
current spreading
light
emitting diode
diode chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102010014667A
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German (de)
English (en)
Inventor
Dr. Sundgren Petrus
Elmar Baur
Dr. Hohenadler Martin
Dr. Hofmann Clemens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102010014667A priority Critical patent/DE102010014667A1/de
Priority to PCT/EP2011/055566 priority patent/WO2011128277A1/de
Priority to CN201180018587.3A priority patent/CN102834937B/zh
Priority to US13/640,037 priority patent/US20130126920A1/en
Priority to KR1020127029623A priority patent/KR20130060189A/ko
Priority to JP2013504213A priority patent/JP5943904B2/ja
Priority to CN201510504954.0A priority patent/CN105206731B/zh
Priority to EP11714027.7A priority patent/EP2559076B1/de
Priority to EP16181773.9A priority patent/EP3131127B1/de
Publication of DE102010014667A1 publication Critical patent/DE102010014667A1/de
Priority to US14/830,616 priority patent/US9853188B2/en
Priority to JP2015206284A priority patent/JP6124973B2/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE102010014667A 2010-04-12 2010-04-12 Leuchtdiodenchip mit Stromaufweitungsschicht Withdrawn DE102010014667A1 (de)

Priority Applications (11)

Application Number Priority Date Filing Date Title
DE102010014667A DE102010014667A1 (de) 2010-04-12 2010-04-12 Leuchtdiodenchip mit Stromaufweitungsschicht
JP2013504213A JP5943904B2 (ja) 2010-04-12 2011-04-08 電流拡散層を有する発光ダイオードチップ
CN201180018587.3A CN102834937B (zh) 2010-04-12 2011-04-08 具有电流扩展层的发光二极管芯片
US13/640,037 US20130126920A1 (en) 2010-04-12 2011-04-08 Light-Emitting Diode Chip with Current Spreading Layer
KR1020127029623A KR20130060189A (ko) 2010-04-12 2011-04-08 전류 확산 층을 구비한 발광 다이오드 칩
PCT/EP2011/055566 WO2011128277A1 (de) 2010-04-12 2011-04-08 Leuchtdiodenchip mit stromaufweitungsschicht
CN201510504954.0A CN105206731B (zh) 2010-04-12 2011-04-08 具有电流扩展层的发光二极管芯片
EP11714027.7A EP2559076B1 (de) 2010-04-12 2011-04-08 Leuchtdiodenchip mit stromaufweitungsschicht
EP16181773.9A EP3131127B1 (de) 2010-04-12 2011-04-08 Leuchtdiodenchip mit stromaufweitungsschicht
US14/830,616 US9853188B2 (en) 2010-04-12 2015-08-19 Light-emitting diode chip with current spreading layer
JP2015206284A JP6124973B2 (ja) 2010-04-12 2015-10-20 電流拡散層を有する発光ダイオードチップ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102010014667A DE102010014667A1 (de) 2010-04-12 2010-04-12 Leuchtdiodenchip mit Stromaufweitungsschicht

Publications (1)

Publication Number Publication Date
DE102010014667A1 true DE102010014667A1 (de) 2011-10-13

Family

ID=44123194

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010014667A Withdrawn DE102010014667A1 (de) 2010-04-12 2010-04-12 Leuchtdiodenchip mit Stromaufweitungsschicht

Country Status (7)

Country Link
US (2) US20130126920A1 (https=)
EP (2) EP3131127B1 (https=)
JP (2) JP5943904B2 (https=)
KR (1) KR20130060189A (https=)
CN (2) CN102834937B (https=)
DE (1) DE102010014667A1 (https=)
WO (1) WO2011128277A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014114524A1 (de) * 2013-01-28 2014-07-31 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip mit einer ald-schicht verkapselt und entsprechendes verfahren zur herstellung
EP2903027A1 (de) * 2014-01-30 2015-08-05 AZUR SPACE Solar Power GmbH LED-Halbleiterbauelement
DE102015011635A1 (de) 2015-09-11 2017-03-16 Azur Space Solar Power Gmbh lnfrarot-LED
DE102015118041A1 (de) * 2015-10-22 2017-04-27 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010014667A1 (de) * 2010-04-12 2011-10-13 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Stromaufweitungsschicht
JP2016054260A (ja) 2014-09-04 2016-04-14 株式会社東芝 半導体発光素子
DE102017101637A1 (de) * 2017-01-27 2018-08-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102017104144B9 (de) * 2017-02-28 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Leuchtdioden
TWI635626B (zh) * 2017-10-19 2018-09-11 友達光電股份有限公司 發光裝置
US20210288222A1 (en) * 2020-03-11 2021-09-16 Lumileds Llc Light Emitting Diode Devices With Common Electrode
US11942507B2 (en) 2020-03-11 2024-03-26 Lumileds Llc Light emitting diode devices
US11735695B2 (en) * 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
US11848402B2 (en) 2020-03-11 2023-12-19 Lumileds Llc Light emitting diode devices with multilayer composite film including current spreading layer
US11569415B2 (en) 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
CN113793887B (zh) * 2021-08-24 2025-03-25 天津三安光电有限公司 Led外延结构及其制备方法、led芯片及其制备方法
CN116978999B (zh) * 2023-09-22 2024-01-02 南昌凯捷半导体科技有限公司 一种电流限域Micro-LED芯片及其制作方法

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Publication number Priority date Publication date Assignee Title
US6426518B1 (en) 1999-01-05 2002-07-30 Rohm Co., Ltd. Semiconductor light emitting device
DE102007022947A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102007023878A1 (de) * 2007-05-23 2008-11-27 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102008010296A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED mit Stromaufweitungsschicht

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426518B1 (en) 1999-01-05 2002-07-30 Rohm Co., Ltd. Semiconductor light emitting device
DE102007022947A1 (de) * 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102007023878A1 (de) * 2007-05-23 2008-11-27 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102008010296A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh LED mit Stromaufweitungsschicht

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014114524A1 (de) * 2013-01-28 2014-07-31 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip mit einer ald-schicht verkapselt und entsprechendes verfahren zur herstellung
US9761770B2 (en) 2013-01-28 2017-09-12 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production
EP2903027A1 (de) * 2014-01-30 2015-08-05 AZUR SPACE Solar Power GmbH LED-Halbleiterbauelement
US9299886B2 (en) 2014-01-30 2016-03-29 Azur Space Solar Power Gmbh LED semiconductor component
DE102015011635A1 (de) 2015-09-11 2017-03-16 Azur Space Solar Power Gmbh lnfrarot-LED
US10211370B2 (en) 2015-09-11 2019-02-19 Azur Space Solar Power Gmbh Infrared LED
DE102015011635B4 (de) * 2015-09-11 2020-10-08 Azur Space Solar Power Gmbh lnfrarot-LED
DE102015118041A1 (de) * 2015-10-22 2017-04-27 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
US10283676B2 (en) 2015-10-22 2019-05-07 Osram Opto Semiconductors Gmbh Light-emitting diode chip with one of a mirror layer and an adhesion-promoting layer for high efficiency and long service life
DE102015118041B4 (de) * 2015-10-22 2026-01-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip

Also Published As

Publication number Publication date
JP2016048785A (ja) 2016-04-07
CN102834937B (zh) 2015-08-26
JP5943904B2 (ja) 2016-07-05
US9853188B2 (en) 2017-12-26
US20130126920A1 (en) 2013-05-23
CN102834937A (zh) 2012-12-19
CN105206731A (zh) 2015-12-30
JP2013524547A (ja) 2013-06-17
EP3131127A1 (de) 2017-02-15
EP2559076B1 (de) 2016-09-21
KR20130060189A (ko) 2013-06-07
WO2011128277A1 (de) 2011-10-20
US20150357516A1 (en) 2015-12-10
CN105206731B (zh) 2018-01-19
JP6124973B2 (ja) 2017-05-10
EP3131127B1 (de) 2018-01-31
EP2559076A1 (de) 2013-02-20

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee