DE102008026144B4 - Kristallzüchtungsofen mit Konvektionskühlungsstruktur - Google Patents

Kristallzüchtungsofen mit Konvektionskühlungsstruktur Download PDF

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Publication number
DE102008026144B4
DE102008026144B4 DE102008026144A DE102008026144A DE102008026144B4 DE 102008026144 B4 DE102008026144 B4 DE 102008026144B4 DE 102008026144 A DE102008026144 A DE 102008026144A DE 102008026144 A DE102008026144 A DE 102008026144A DE 102008026144 B4 DE102008026144 B4 DE 102008026144B4
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DE
Germany
Prior art keywords
heating element
boiler room
crystal growing
growing furnace
furnace according
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Expired - Fee Related
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DE102008026144A
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German (de)
English (en)
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DE102008026144A1 (de
Inventor
Shiow-Jeng Lew
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Green Energy Technology Inc
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Green Energy Technology Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Furnace Details (AREA)
DE102008026144A 2007-12-21 2008-05-30 Kristallzüchtungsofen mit Konvektionskühlungsstruktur Expired - Fee Related DE102008026144B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW096149221 2007-12-21
TW096149221A TW200928018A (en) 2007-12-21 2007-12-21 Crystal-growing furnace with convectional cooling structure

Publications (2)

Publication Number Publication Date
DE102008026144A1 DE102008026144A1 (de) 2009-06-25
DE102008026144B4 true DE102008026144B4 (de) 2013-02-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008026144A Expired - Fee Related DE102008026144B4 (de) 2007-12-21 2008-05-30 Kristallzüchtungsofen mit Konvektionskühlungsstruktur

Country Status (4)

Country Link
US (1) US8062423B2 (https=)
JP (1) JP4986964B2 (https=)
DE (1) DE102008026144B4 (https=)
TW (1) TW200928018A (https=)

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TW200928018A (en) * 2007-12-21 2009-07-01 Green Energy Technology Inc Crystal-growing furnace with convectional cooling structure
TW200932963A (en) * 2008-01-29 2009-08-01 Green Energy Technology Inc Crystal growing furnace with heating improvement structure
KR100902859B1 (ko) * 2009-02-17 2009-06-16 (주) 썸백엔지니어링 태양전지용 실리콘 제조용 캐스팅 장치
IT1396761B1 (it) * 2009-10-21 2012-12-14 Saet Spa Metodo e dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio
CN101949056B (zh) * 2010-09-25 2013-01-30 王敬 在坩埚侧壁底端设置有保温部件的定向凝固炉
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
TWI539039B (zh) * 2012-01-26 2016-06-21 希利柯爾材料股份有限公司 矽的純化方法
CN104583464A (zh) * 2012-06-25 2015-04-29 希利柯尔材料股份有限公司 用于纯化硅的耐火坩埚的表面的衬里以及使用该坩埚进行熔化和进一步定向凝固以纯化硅熔融体的方法
CN103014851B (zh) * 2012-12-25 2016-01-27 南昌大学 一种生产定向凝固多晶硅锭的方法
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
GB201319671D0 (en) 2013-11-07 2013-12-25 Ebner Ind Ofenbau Controlling a temperature of a crucible inside an oven
CN103615891B (zh) * 2013-11-20 2016-10-05 合肥日新高温技术有限公司 一种真空气氛高压碳板炉
TWM485251U (zh) * 2014-04-03 2014-09-01 Globalwafers Co Ltd 晶體生長裝置及其保溫罩
CN105648525B (zh) * 2014-11-17 2018-07-10 镇江荣德新能源科技有限公司 用于多晶硅定向凝固工艺的多晶炉
TWI614473B (zh) * 2015-07-20 2018-02-11 茂迪股份有限公司 長晶爐設備
US20180347071A1 (en) * 2015-07-27 2018-12-06 Corner Star Limited Systems and methods for low-oxygen crystal growth using a double-layer continuous czochralski process
CN105088338A (zh) * 2015-08-14 2015-11-25 晶科能源有限公司 一种多晶铸锭炉及排气装置
CN105671633A (zh) * 2016-02-03 2016-06-15 陈鸽 一种改变载气流向的引流装置
US10689010B2 (en) * 2016-12-22 2020-06-23 Etran, Inc. Elevated transportation system
CN107523865A (zh) * 2017-09-28 2017-12-29 浙江晶盛机电股份有限公司 一种定向水冷散热的节能型高效多晶硅铸锭炉
JP7186534B2 (ja) 2018-07-25 2022-12-09 昭和電工株式会社 結晶成長装置
CN108842180A (zh) * 2018-08-24 2018-11-20 常州四杰机械科技有限公司 一种准单晶铸锭炉下炉体机构
CN109295495B (zh) * 2018-11-19 2020-08-04 江苏斯力康科技有限公司 利于控制定向凝固平直液固界面的温场调控机构
CN110184651A (zh) * 2019-07-17 2019-08-30 晶科能源有限公司 一种多晶铸锭炉
CN112857039B (zh) * 2021-03-06 2023-08-15 陕西万豪钛金特材科技有限公司 一种基于合金熔炼的烧结炉及冷却方法
CN114455591B (zh) * 2022-01-18 2023-08-18 山西宏晟利隆科技有限公司 一种工业制造二氧化硅设备

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JP2000319094A (ja) * 1999-04-30 2000-11-21 Mitsubishi Materials Corp 結晶シリコン製造装置
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US20070044707A1 (en) * 2005-08-25 2007-03-01 Frederick Schmid System and method for crystal growing
US20070283882A1 (en) * 2006-06-13 2007-12-13 Young Sang Cho Manufacturing equipment for polysilicon ingot

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TW200928018A (en) * 2007-12-21 2009-07-01 Green Energy Technology Inc Crystal-growing furnace with convectional cooling structure
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US6299682B1 (en) * 1998-02-25 2001-10-09 Mitsubishi Materials Corporation Method for producing silicon ingot having directional solidification structure and apparatus for producing the same
JP2000319094A (ja) * 1999-04-30 2000-11-21 Mitsubishi Materials Corp 結晶シリコン製造装置
JP2001048696A (ja) * 1999-08-06 2001-02-20 Mitsubishi Materials Corp 結晶シリコン製造装置
US20070044707A1 (en) * 2005-08-25 2007-03-01 Frederick Schmid System and method for crystal growing
US20070283882A1 (en) * 2006-06-13 2007-12-13 Young Sang Cho Manufacturing equipment for polysilicon ingot

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Also Published As

Publication number Publication date
JP2009150637A (ja) 2009-07-09
US8062423B2 (en) 2011-11-22
JP4986964B2 (ja) 2012-07-25
US20090158995A1 (en) 2009-06-25
DE102008026144A1 (de) 2009-06-25
TWI363109B (https=) 2012-05-01
TW200928018A (en) 2009-07-01

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