DE102006046297A1 - Halbleiterlaser - Google Patents

Halbleiterlaser Download PDF

Info

Publication number
DE102006046297A1
DE102006046297A1 DE102006046297A DE102006046297A DE102006046297A1 DE 102006046297 A1 DE102006046297 A1 DE 102006046297A1 DE 102006046297 A DE102006046297 A DE 102006046297A DE 102006046297 A DE102006046297 A DE 102006046297A DE 102006046297 A1 DE102006046297 A1 DE 102006046297A1
Authority
DE
Germany
Prior art keywords
semiconductor laser
absorber zone
absorber
semiconductor
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102006046297A
Other languages
German (de)
English (en)
Inventor
Christoph Eichler
Christian Rumbolz
Alfred Lell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102006046297A priority Critical patent/DE102006046297A1/de
Priority to EP07017398A priority patent/EP1906498A1/de
Priority to JP2007251152A priority patent/JP2008091910A/ja
Priority to US11/906,410 priority patent/US20080089374A1/en
Publication of DE102006046297A1 publication Critical patent/DE102006046297A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE102006046297A 2006-09-29 2006-09-29 Halbleiterlaser Withdrawn DE102006046297A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE102006046297A DE102006046297A1 (de) 2006-09-29 2006-09-29 Halbleiterlaser
EP07017398A EP1906498A1 (de) 2006-09-29 2007-09-05 Halbleiterlaser mit Absorberzone zur Dämpfung höherer Moden
JP2007251152A JP2008091910A (ja) 2006-09-29 2007-09-27 半導体レーザ
US11/906,410 US20080089374A1 (en) 2006-09-29 2007-10-01 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006046297A DE102006046297A1 (de) 2006-09-29 2006-09-29 Halbleiterlaser

Publications (1)

Publication Number Publication Date
DE102006046297A1 true DE102006046297A1 (de) 2008-04-03

Family

ID=38667082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006046297A Withdrawn DE102006046297A1 (de) 2006-09-29 2006-09-29 Halbleiterlaser

Country Status (4)

Country Link
US (1) US20080089374A1 (https=)
EP (1) EP1906498A1 (https=)
JP (1) JP2008091910A (https=)
DE (1) DE102006046297A1 (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025922A1 (de) * 2008-05-30 2009-12-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
DE102011100175A1 (de) * 2011-05-02 2012-11-08 Osram Opto Semiconductors Gmbh Laserlichtquelle
DE102011103952A1 (de) * 2011-06-10 2012-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
DE102012106687A1 (de) * 2012-07-24 2014-02-13 Osram Opto Semiconductors Gmbh Steglaser
DE102012109175A1 (de) * 2012-09-27 2014-04-17 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102012111512A1 (de) * 2012-11-28 2014-05-28 Osram Opto Semiconductors Gmbh Halbleiterstreifenlaser
DE102013223499A1 (de) * 2013-11-18 2015-05-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Breitstreifenlaser und Verfahren zum Herstellen eines Breitstreifenlasers
DE102016106495A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE112017000994B4 (de) * 2016-02-25 2024-08-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserbarren mit gräben
DE102011123129B4 (de) * 2011-05-02 2025-04-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit Modenfilterstruktur
DE112020003385B4 (de) * 2019-08-13 2025-08-14 Nlight, Inc. Verfahren, System und Vorrichtung zur Unterdrückung von Moden höherer Ordnung

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008058436B4 (de) * 2008-11-21 2019-03-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaserchip
DE102009015314B4 (de) * 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
JP2011243939A (ja) * 2010-01-20 2011-12-01 Panasonic Corp 窒化物半導体レーザ装置
JP5697907B2 (ja) * 2010-06-25 2015-04-08 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
DE102012103549B4 (de) 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
JP6191610B2 (ja) * 2012-09-25 2017-09-06 日本電気株式会社 高次モードフィルタ
JP6566034B2 (ja) * 2015-07-28 2019-08-28 ソニー株式会社 発光素子
DE102015119226A1 (de) * 2015-11-09 2017-05-11 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
CN110114945B (zh) * 2016-10-28 2023-06-06 恩耐公司 用于高阶模式抑制的方法、系统和设备
DE102018125496A1 (de) * 2018-10-15 2020-04-16 Osram Opto Semiconductors Gmbh Halbleiterlaser und Herstellungsverfahren für Halbleiterlaser
JP6940572B2 (ja) * 2019-01-29 2021-09-29 シャープ株式会社 窒化物半導体レーザ素子および半導体レーザ装置
DE102019103909A1 (de) 2019-02-15 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Laserdiode und Verfahren für deren Herrstellung
DE102019106536B4 (de) * 2019-03-14 2024-11-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode
US11828934B1 (en) 2019-07-10 2023-11-28 X Development Llc High-dispersion optical components and methods for making the same
US11011884B1 (en) * 2019-08-29 2021-05-18 X Development Llc Systems and methods for designing optical devices having mode selective facets
US11455443B1 (en) 2019-08-29 2022-09-27 X Development Llc Methods and systems for designing image processing devices
US11604957B1 (en) 2019-09-20 2023-03-14 X Development Llc Methods for designing hybrid neural networks having physical and digital components
US12061851B1 (en) 2019-12-18 2024-08-13 X Development Llc Systems and methods for designing photonic computational architectures
US11092746B1 (en) 2019-12-18 2021-08-17 X Development Llc Post-fabrication photonic performance tuning
US11835715B1 (en) 2019-12-19 2023-12-05 X Development Llc Multimodal photonic components
US11842129B1 (en) 2020-05-28 2023-12-12 X Development Llc Finite floating-point numerical simulation and optimization

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6141365A (en) * 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
JP2002131713A (ja) * 2000-10-19 2002-05-09 Mitsubishi Electric Corp 光半導体デバイス
DE10105722A1 (de) * 2001-02-08 2002-09-05 Osram Opto Semiconductors Gmbh Halbleiter-Laser
US20040047381A1 (en) * 2001-04-12 2004-03-11 Tsuyoshi Tojo Semiconductor laser device
US20040245537A1 (en) * 2001-09-21 2004-12-09 Toshiyuki Kawakami Gan-based semiconductor laser device
US20050201438A1 (en) * 2002-09-17 2005-09-15 Silke Traut Method for making a high power semiconductor laser diode
US20060131603A1 (en) * 2004-12-17 2006-06-22 Samsung Electro-Mechanics Co., Ltd. Semiconductor laser diode

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5219785A (en) * 1989-01-27 1993-06-15 Spectra Diode Laboratories, Inc. Method of forming current barriers in semiconductor lasers
US5974069A (en) * 1994-09-16 1999-10-26 Rohm Co., Ltd Semiconductor laser and manufacturing method thereof
JPH0936474A (ja) * 1995-07-14 1997-02-07 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
US5963573A (en) * 1997-08-25 1999-10-05 3M Innovative Properties Company Light absorbing layer for II-VI semiconductor light emitting devices
JPH1187850A (ja) * 1997-09-03 1999-03-30 Sharp Corp 窒化物系化合物半導体レーザ素子及びレーザ装置
JPH11112075A (ja) * 1997-09-30 1999-04-23 Fujitsu Ltd 半導体レーザ装置及びその製造方法
JP3653169B2 (ja) * 1998-01-26 2005-05-25 シャープ株式会社 窒化ガリウム系半導体レーザ素子
JPH11251685A (ja) * 1998-03-05 1999-09-17 Toshiba Corp 半導体レーザ
US6287946B1 (en) * 1999-05-05 2001-09-11 Hrl Laboratories, Llc Fabrication of low resistance, non-alloyed, ohmic contacts to InP using non-stoichiometric InP layers
JP4646093B2 (ja) * 1999-09-09 2011-03-09 シャープ株式会社 窒化物半導体レーザ素子およびその製造方法
JP2001148544A (ja) * 1999-09-10 2001-05-29 Sharp Corp 半導体発光素子
JP2002270967A (ja) * 2001-03-13 2002-09-20 Nichia Chem Ind Ltd 半導体レーザ素子
JP2002299765A (ja) * 2001-04-03 2002-10-11 Sony Corp 半導体レーザ素子及びその作製方法
JP2003007621A (ja) * 2001-06-21 2003-01-10 Nikko Materials Co Ltd ＧａＮ系化合物半導体結晶の製造方法
JP2003163419A (ja) * 2001-11-29 2003-06-06 Sanyo Electric Co Ltd 窒化物系半導体発光素子
EP1320158A1 (en) * 2001-12-13 2003-06-18 Agilent Technologies, Inc. (a Delaware corporation) Means of controlling dopant diffusion in a semiconductor heterostructure
WO2003075425A1 (fr) * 2002-03-01 2003-09-12 Sanyo Electric Co., Ltd. Element laser a semi-conducteur a base de nitrure
JP2004253776A (ja) * 2003-01-31 2004-09-09 Sharp Corp 半導体レーザ素子及び光学式情報記録装置
JP4830315B2 (ja) * 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子
JP4551121B2 (ja) * 2004-05-24 2010-09-22 シャープ株式会社 半導体レーザ装置
JP4193867B2 (ja) * 2006-05-02 2008-12-10 ソニー株式会社 ＧａＮ系半導体レーザの製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6141365A (en) * 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
JP2002131713A (ja) * 2000-10-19 2002-05-09 Mitsubishi Electric Corp 光半導体デバイス
DE10105722A1 (de) * 2001-02-08 2002-09-05 Osram Opto Semiconductors Gmbh Halbleiter-Laser
US20040047381A1 (en) * 2001-04-12 2004-03-11 Tsuyoshi Tojo Semiconductor laser device
US20040245537A1 (en) * 2001-09-21 2004-12-09 Toshiyuki Kawakami Gan-based semiconductor laser device
US20050201438A1 (en) * 2002-09-17 2005-09-15 Silke Traut Method for making a high power semiconductor laser diode
US20060131603A1 (en) * 2004-12-17 2006-06-22 Samsung Electro-Mechanics Co., Ltd. Semiconductor laser diode

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025922B4 (de) * 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
US8270451B2 (en) 2008-05-30 2012-09-18 Osram Opto Semiconductors Gmbh Edge emitting semiconductor laser having a phase structure
DE102008025922A1 (de) * 2008-05-30 2009-12-03 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur
DE102011123129B4 (de) * 2011-05-02 2025-04-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit Modenfilterstruktur
DE102011100175B4 (de) 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
US9048631B2 (en) 2011-05-02 2015-06-02 Osram Opto Semiconductors Gmbh Laser light source
DE102011100175A1 (de) * 2011-05-02 2012-11-08 Osram Opto Semiconductors Gmbh Laserlichtquelle
DE102011103952A1 (de) * 2011-06-10 2012-12-13 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser
US8995491B2 (en) 2011-06-10 2015-03-31 Osram Opto Semiconductors Gmbh Edge-emitting semiconductor laser
DE102011103952B4 (de) 2011-06-10 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierender Halbleiterlaser
DE102012106687A1 (de) * 2012-07-24 2014-02-13 Osram Opto Semiconductors Gmbh Steglaser
DE102012106687B4 (de) 2012-07-24 2019-01-24 Osram Opto Semiconductors Gmbh Steglaser
US9281656B2 (en) 2012-07-24 2016-03-08 Osram Opto Semiconductors Gmbh Ridge laser
DE102012109175A1 (de) * 2012-09-27 2014-04-17 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
US9531163B2 (en) 2012-09-27 2016-12-27 Osram Opto Semiconductors Gmbh Semiconductor laser diode
US9048630B2 (en) 2012-09-27 2015-06-02 Osram Opto Semiconductors Gmbh Semiconductor laser diode
DE102012109175B4 (de) 2012-09-27 2019-02-28 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US9054487B2 (en) 2012-11-28 2015-06-09 Osram Opto Semiconductors Gmbh Semiconductor stripe laser
US9673590B2 (en) 2012-11-28 2017-06-06 Osram Opto Semiconductors Gmbh Semiconductor stripe laser
DE102012111512A1 (de) * 2012-11-28 2014-05-28 Osram Opto Semiconductors Gmbh Halbleiterstreifenlaser
DE102012111512B4 (de) 2012-11-28 2021-11-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterstreifenlaser
DE102013223499B4 (de) * 2013-11-18 2016-10-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Breitstreifenlaser und Verfahren zum Herstellen eines Breitstreifenlasers
DE102013223499C5 (de) * 2013-11-18 2020-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Breitstreifenlaser und Verfahren zum Herstellen eines Breitstreifenlasers
DE102013223499A1 (de) * 2013-11-18 2015-05-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Breitstreifenlaser und Verfahren zum Herstellen eines Breitstreifenlasers
DE112017000994B4 (de) * 2016-02-25 2024-08-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserbarren mit gräben
US11201454B2 (en) 2016-04-08 2021-12-14 Osram Oled Gmbh Semiconductor laser
DE102016106495A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE112020003385B4 (de) * 2019-08-13 2025-08-14 Nlight, Inc. Verfahren, System und Vorrichtung zur Unterdrückung von Moden höherer Ordnung

Also Published As

Publication number Publication date
US20080089374A1 (en) 2008-04-17
JP2008091910A (ja) 2008-04-17
EP1906498A1 (de) 2008-04-02

Similar Documents

Publication Publication Date Title
DE102006046297A1 (de) Halbleiterlaser
DE102008014093B4 (de) Kantenemittierender Halbleiterlaserchip mit zumindest einer Strombarriere
DE102011100175B4 (de) Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102009019996B4 (de) DFB Laserdiode mit lateraler Kopplung für große Ausgangsleistungen
DE102012106687B4 (de) Steglaser
EP1883140B1 (de) LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
DE69534700T2 (de) Halbleiteranordnungen und verfahren
EP2191547B1 (de) Optoelektronisches bauelement
EP3719942A1 (de) Laserlichtquelle
WO2009082999A2 (de) Kantenemittierender halbleiterlaserchip mit einem strukturierten kontaktstreifen
EP2218153B1 (de) Verfahren zur herstellung eines strahlungsemittierenden bauelements und strahlungsemittierendes bauelement
EP2494665B1 (de) Kantenemittierender halbleiterlaser
DE102008055941A1 (de) Oberflächenemittierendes Halbleiterlaserbauelement mit einer vertikalen Emissionsrichtung
EP1883119B1 (de) Halbleiter-Schichtstruktur mit Übergitter
DE102016122147B4 (de) Halbleiterlaser
DE69928990T2 (de) Halbleiterlaser und Herstellungsverfahren
EP1873879B1 (de) Kantenemittierender Halbleiterlaser
DE20108607U1 (de) Halbleiter-Laser
DE102009019516A1 (de) Kantenemittierender Halbleiterlaser
EP4409701B1 (de) Kantenemittierende laserdiode mit erhöhter cod-schwelle
WO2011032841A2 (de) Kantenemittierender halbleiterlaser
DE102005036820A1 (de) Strahlungsemittierender Halbleiterkörper für einen vertikal emittierenden Laser und Verfahren zu dessen Herstellung
EP3568887A1 (de) Diodenlaser mit verbessertem modenprofil
EP2262067B1 (de) Optoelektronisches Halbleiterbauelement
DE102006042196A1 (de) Oberflächenemittierender Halbleiterkörper mit vertikaler Emissionsrichtung und stabilisierter Emissionswellenlänge

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
R005 Application deemed withdrawn due to failure to request examination

Effective date: 20131001