DE102005008346A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung Download PDF

Info

Publication number
DE102005008346A1
DE102005008346A1 DE200510008346 DE102005008346A DE102005008346A1 DE 102005008346 A1 DE102005008346 A1 DE 102005008346A1 DE 200510008346 DE200510008346 DE 200510008346 DE 102005008346 A DE102005008346 A DE 102005008346A DE 102005008346 A1 DE102005008346 A1 DE 102005008346A1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor element
peripheral
edge
central
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE200510008346
Other languages
German (de)
English (en)
Inventor
Takaaki Shirasawa
Tsuyoshi Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102005008346A1 publication Critical patent/DE102005008346A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE200510008346 2004-03-09 2005-02-23 Halbleitervorrichtung Withdrawn DE102005008346A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004/065341 2004-03-09
JP2004065341A JP4097613B2 (ja) 2004-03-09 2004-03-09 半導体装置

Publications (1)

Publication Number Publication Date
DE102005008346A1 true DE102005008346A1 (de) 2005-09-29

Family

ID=34909377

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200510008346 Withdrawn DE102005008346A1 (de) 2004-03-09 2005-02-23 Halbleitervorrichtung

Country Status (3)

Country Link
US (1) US20050199999A1 (https=)
JP (1) JP4097613B2 (https=)
DE (1) DE102005008346A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112013007670B4 (de) 2013-12-04 2023-07-06 Arigna Technology Ltd. Halbleitervorrichtung

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5168866B2 (ja) * 2006-09-28 2013-03-27 三菱電機株式会社 パワー半導体モジュール
US20080234953A1 (en) * 2007-03-22 2008-09-25 Ignowski James S Power estimation for a semiconductor device
JP5252819B2 (ja) * 2007-03-26 2013-07-31 三菱電機株式会社 半導体装置およびその製造方法
DE102007052630B4 (de) * 2007-11-05 2019-08-14 Infineon Technologies Ag Leistungshalbleitermodul mit Temperatursensor
US8057094B2 (en) * 2007-11-16 2011-11-15 Infineon Technologies Ag Power semiconductor module with temperature measurement
KR101013557B1 (ko) 2008-11-06 2011-02-14 주식회사 하이닉스반도체 플랙시블 반도체 패키지 및 이를 제조하기 위한 와이어 본딩 장치
JP5921055B2 (ja) * 2010-03-08 2016-05-24 ルネサスエレクトロニクス株式会社 半導体装置
WO2011155032A1 (ja) * 2010-06-09 2011-12-15 トヨタ自動車株式会社 クラック特定装置と半導体装置
CN102623416B (zh) * 2012-04-24 2015-09-02 苏州远创达科技有限公司 一种射频功放模块的功率器件无封装结构及其组装方法
US9941242B2 (en) 2012-04-24 2018-04-10 Innogration (Suzhou) Co., Ltd. Unpacked structure for power device of radio frequency power amplification module and assembly method therefor
CN102956605B (zh) * 2012-11-19 2016-03-23 苏州远创达科技有限公司 一种半导体部件及其制作方法
JP6272213B2 (ja) * 2014-11-26 2018-01-31 三菱電機株式会社 半導体装置
CN108604580B (zh) * 2016-02-04 2021-08-13 三菱电机株式会社 半导体装置
JP7037390B2 (ja) * 2018-02-27 2022-03-16 新電元工業株式会社 パワーモジュール
EP3637461B1 (en) * 2018-10-11 2025-06-04 ABB Schweiz AG Power electronic module
JP7088048B2 (ja) * 2019-01-30 2022-06-21 株式会社デンソー 半導体装置
JP2021005692A (ja) 2019-06-27 2021-01-14 株式会社デンソー 半導体装置
KR102602641B1 (ko) * 2023-02-15 2023-11-16 (주)아인테크놀러지 기판 크랙 검사장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3168874B2 (ja) * 1995-05-23 2001-05-21 富士電機株式会社 半導体装置
DE19534604C1 (de) * 1995-09-18 1996-10-24 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement mit mehreren Temperatursensoren zum Schutz vor Überlastung
JPH09148523A (ja) * 1995-11-21 1997-06-06 Toshiba Corp 半導体装置
US6345238B1 (en) * 1998-12-21 2002-02-05 Airpax Corporation, Llc Linear temperature sensor
US6137165A (en) * 1999-06-25 2000-10-24 International Rectifier Corp. Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
JP4089143B2 (ja) * 2000-08-30 2008-05-28 三菱電機株式会社 電力用半導体装置
JP3668708B2 (ja) * 2001-10-22 2005-07-06 株式会社日立製作所 故障検知システム
JP3886793B2 (ja) * 2001-12-03 2007-02-28 株式会社ルネサステクノロジ 半導体集積回路装置
US6914764B2 (en) * 2002-07-11 2005-07-05 International Business Machines Corporation On-chip thermal sensing circuit
US6786639B2 (en) * 2002-08-30 2004-09-07 International Business Machines Corporation Device for sensing temperature of an electronic chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112013007670B4 (de) 2013-12-04 2023-07-06 Arigna Technology Ltd. Halbleitervorrichtung

Also Published As

Publication number Publication date
JP4097613B2 (ja) 2008-06-11
JP2005259753A (ja) 2005-09-22
US20050199999A1 (en) 2005-09-15

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OP8 Request for examination as to paragraph 44 patent law
8139 Disposal/non-payment of the annual fee