DE10138585A1 - Speicherzelle - Google Patents
SpeicherzelleInfo
- Publication number
- DE10138585A1 DE10138585A1 DE10138585A DE10138585A DE10138585A1 DE 10138585 A1 DE10138585 A1 DE 10138585A1 DE 10138585 A DE10138585 A DE 10138585A DE 10138585 A DE10138585 A DE 10138585A DE 10138585 A1 DE10138585 A1 DE 10138585A1
- Authority
- DE
- Germany
- Prior art keywords
- drain
- source
- control gate
- memory cell
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000002347 injection Methods 0.000 claims abstract description 38
- 239000007924 injection Substances 0.000 claims abstract description 38
- 238000003860 storage Methods 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 5
- 210000004027 cell Anatomy 0.000 description 63
- 108091006146 Channels Proteins 0.000 description 38
- 239000002800 charge carrier Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 102100037807 GATOR complex protein MIOS Human genes 0.000 description 3
- 101000950705 Homo sapiens GATOR complex protein MIOS Proteins 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10138585A DE10138585A1 (de) | 2001-08-06 | 2001-08-06 | Speicherzelle |
| JP2003522178A JP4481004B2 (ja) | 2001-08-06 | 2002-07-26 | メモリーセルおよびメモリーセルに書込みを行う方法 |
| EP02767055A EP1415349A2 (de) | 2001-08-06 | 2002-07-26 | Speicherzelle |
| PCT/DE2002/002759 WO2003017374A2 (de) | 2001-08-06 | 2002-07-26 | Speicherzelle |
| CNA028154541A CN1539170A (zh) | 2001-08-06 | 2002-07-26 | 记忆胞元 |
| KR1020047001792A KR100679775B1 (ko) | 2001-08-06 | 2002-07-26 | 메모리 셀 및 그 프로그래밍 방법 |
| TW091117675A TW556320B (en) | 2001-08-06 | 2002-08-06 | Memory cell |
| US10/779,557 US6998672B2 (en) | 2001-08-06 | 2004-02-06 | Memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10138585A DE10138585A1 (de) | 2001-08-06 | 2001-08-06 | Speicherzelle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10138585A1 true DE10138585A1 (de) | 2003-03-06 |
Family
ID=7694577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10138585A Ceased DE10138585A1 (de) | 2001-08-06 | 2001-08-06 | Speicherzelle |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6998672B2 (enExample) |
| EP (1) | EP1415349A2 (enExample) |
| JP (1) | JP4481004B2 (enExample) |
| KR (1) | KR100679775B1 (enExample) |
| CN (1) | CN1539170A (enExample) |
| DE (1) | DE10138585A1 (enExample) |
| TW (1) | TW556320B (enExample) |
| WO (1) | WO2003017374A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7184315B2 (en) * | 2003-11-04 | 2007-02-27 | Micron Technology, Inc. | NROM flash memory with self-aligned structural charge separation |
| US7202523B2 (en) | 2003-11-17 | 2007-04-10 | Micron Technology, Inc. | NROM flash memory devices on ultrathin silicon |
| JP2008053270A (ja) * | 2006-08-22 | 2008-03-06 | Nec Electronics Corp | 半導体記憶装置、及びその製造方法 |
| KR100846393B1 (ko) * | 2007-03-30 | 2008-07-15 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156188A (ja) * | 1999-03-08 | 2001-06-08 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| DE10036911A1 (de) * | 2000-07-28 | 2002-02-14 | Infineon Technologies Ag | Multi-Bit-Speicherzelle und Verfahren zur Herstellung |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6418270A (en) * | 1987-07-13 | 1989-01-23 | Oki Electric Ind Co Ltd | Semiconductor memory device |
| US5219774A (en) * | 1988-05-17 | 1993-06-15 | Xicor, Inc. | Deposited tunneling oxide |
| US5270559A (en) * | 1990-10-15 | 1993-12-14 | California Institute Of Technology | Method and apparatus for making highly accurate potential well adjustments in CCD's |
| US5284784A (en) * | 1991-10-02 | 1994-02-08 | National Semiconductor Corporation | Buried bit-line source-side injection flash memory cell |
| JPH0613627A (ja) * | 1991-10-08 | 1994-01-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US5910912A (en) * | 1992-10-30 | 1999-06-08 | International Business Machines Corporation | Flash EEPROM with dual-sidewall gate |
| US6057575A (en) * | 1996-03-18 | 2000-05-02 | Integrated Memory Technologies, Inc. | Scalable flash EEPROM memory cell, method of manufacturing and operation thereof |
| US5963806A (en) * | 1996-12-09 | 1999-10-05 | Mosel Vitelic, Inc. | Method of forming memory cell with built-in erasure feature |
| JP3264365B2 (ja) * | 1997-03-28 | 2002-03-11 | ローム株式会社 | 不揮発性記憶素子 |
| US5900657A (en) * | 1997-05-19 | 1999-05-04 | National Semiconductor Corp. | MOS switch that reduces clock feed through in a switched capacitor circuit |
| US6281545B1 (en) * | 1997-11-20 | 2001-08-28 | Taiwan Semiconductor Manufacturing Company | Multi-level, split-gate, flash memory cell |
| US6091101A (en) * | 1998-03-30 | 2000-07-18 | Worldwide Semiconductor Manufacturing Corporation | Multi-level flash memory using triple well |
| US5991204A (en) * | 1998-04-15 | 1999-11-23 | Chang; Ming-Bing | Flash eeprom device employing polysilicon sidewall spacer as an erase gate |
| US6043530A (en) * | 1998-04-15 | 2000-03-28 | Chang; Ming-Bing | Flash EEPROM device employing polysilicon sidewall spacer as an erase gate |
| US6093945A (en) * | 1998-07-09 | 2000-07-25 | Windbond Electronics Corp. | Split gate flash memory with minimum over-erase problem |
| US6107139A (en) * | 1998-07-17 | 2000-08-22 | Worldwide Semiconductor Manufacturing Corporation | Method for making a mushroom shaped DRAM capacitor |
| KR100297720B1 (ko) * | 1998-10-19 | 2001-08-07 | 윤종용 | 플래쉬메모리셀및그제조방법 |
| US6313500B1 (en) * | 1999-01-12 | 2001-11-06 | Agere Systems Guardian Corp. | Split gate memory cell |
| US6228695B1 (en) * | 1999-05-27 | 2001-05-08 | Taiwan Semiconductor Manufacturing Company | Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gate |
| US6388293B1 (en) * | 1999-10-12 | 2002-05-14 | Halo Lsi Design & Device Technology, Inc. | Nonvolatile memory cell, operating method of the same and nonvolatile memory array |
| JP2001148434A (ja) * | 1999-10-12 | 2001-05-29 | New Heiro:Kk | 不揮発性メモリセルおよびその使用方法、製造方法ならびに不揮発性メモリアレイ |
| US6504207B1 (en) * | 2000-06-30 | 2003-01-07 | International Business Machines Corporation | Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same |
-
2001
- 2001-08-06 DE DE10138585A patent/DE10138585A1/de not_active Ceased
-
2002
- 2002-07-26 CN CNA028154541A patent/CN1539170A/zh active Pending
- 2002-07-26 WO PCT/DE2002/002759 patent/WO2003017374A2/de not_active Ceased
- 2002-07-26 EP EP02767055A patent/EP1415349A2/de not_active Withdrawn
- 2002-07-26 JP JP2003522178A patent/JP4481004B2/ja not_active Expired - Fee Related
- 2002-07-26 KR KR1020047001792A patent/KR100679775B1/ko not_active Expired - Fee Related
- 2002-08-06 TW TW091117675A patent/TW556320B/zh not_active IP Right Cessation
-
2004
- 2004-02-06 US US10/779,557 patent/US6998672B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001156188A (ja) * | 1999-03-08 | 2001-06-08 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| US6335554B1 (en) * | 1999-03-08 | 2002-01-01 | Kabushiki Kaisha Toshiba | Semiconductor Memory |
| DE10036911A1 (de) * | 2000-07-28 | 2002-02-14 | Infineon Technologies Ag | Multi-Bit-Speicherzelle und Verfahren zur Herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004538662A (ja) | 2004-12-24 |
| KR20040023718A (ko) | 2004-03-18 |
| WO2003017374A3 (de) | 2003-05-30 |
| JP4481004B2 (ja) | 2010-06-16 |
| WO2003017374A2 (de) | 2003-02-27 |
| US20040183125A1 (en) | 2004-09-23 |
| EP1415349A2 (de) | 2004-05-06 |
| US6998672B2 (en) | 2006-02-14 |
| KR100679775B1 (ko) | 2007-02-06 |
| TW556320B (en) | 2003-10-01 |
| CN1539170A (zh) | 2004-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE10129958B4 (de) | Speicherzellenanordnung und Herstellungsverfahren | |
| DE69733630T2 (de) | EEPROM-und NVRAM-Niederspannungstransistoren und Verfahren zur Herstellung | |
| DE102006021070B4 (de) | Halbleitervorrichtungen mit tiefen Grabenisolationsstrukturen und Verfahren zu deren Anfertigung | |
| DE10328577B4 (de) | Nichtflüchtige Speicherzelle und Herstellungsverfahren | |
| DE69527388T2 (de) | EEPROM-Zelle mit Isolationstransistor und Betriebs- und Herstellungsverfahren | |
| DE10326771B4 (de) | Integrierte Speicherschaltung und Verfahren zum Bilden einer integrierten Speicherschaltung | |
| DE4114344C2 (de) | Herstellungsverfahren und Aufbau einer nicht-flüchtigen Halbleiterspeichereinrichtung mit einer Speicherzellenanordnung und einem peripheren Schaltkreis | |
| DE19747776C2 (de) | Flash-Halbleiterspeicher mit Stapelgate und Verfahren zu dessen Herstellung | |
| DE102004043517B4 (de) | Halbleiterspeicherbauelement mit Speicherzellen mit Floating-Gate-Elektrode und Herstellungsverfahren | |
| DE102005006734A1 (de) | Transistorgatestruktur und Herstellungsverfahren | |
| DE10258194B4 (de) | Halbleiterspeicher mit Charge-trapping-Speicherzellen und Herstellungsverfahren | |
| DE102007052217A1 (de) | Integrierter Schaltkreis mit NAND-Speicherzellen-Strängen | |
| DE112006000208B4 (de) | Speicherbauelement mit trapezförmigen Bitleitungen und Verfahren zur Herstellung desselben, und Array von Speicherelementen | |
| WO2004017417A1 (de) | Feldeffekttransistor, zugehörige verwendung und zugehöriges herstellungsverfahren | |
| WO2004107435A1 (de) | Nrom-halbleiterspeichervorrichtung und herstellungsverfahren | |
| DE10333549B3 (de) | Charge-Trapping-Speicherzelle | |
| EP1518277B1 (de) | Verfahren zur herstellung eines nrom-speicherzellenfeldes | |
| DE102006007714A1 (de) | Nichtflüchtiges Speicherbauelement und Verfahren zur Herstellung desselben | |
| DE10226964A1 (de) | Verfahren zur Herstellung einer NROM-Speicherzellenanordnung | |
| DE10138585A1 (de) | Speicherzelle | |
| EP1512179A1 (de) | Verfahren zur herstellung von nrom-speicherzellen mit grabentransistoren | |
| DE69330401T2 (de) | EEPROM-Zelle mit doppelter Polysiliziumschicht und ihr Herstellungsverfahren | |
| DE10054172C2 (de) | Halbleiter-Speicherzelle mit einer in einem Graben angeordneten Floating-Gate-Elektrode und Verfahren zu deren Herstellung | |
| DE10296955T5 (de) | Halbleitervorrichtung bzw. Halbleiterbauelement und Herstellungsverfahren dafür | |
| DE19929618B4 (de) | Verfahren zur Herstellung einer nichtflüchtigen Halbleiter-Speicherzelle mit separatem Tunnelfenster |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8131 | Rejection |