DE69330401T2 - EEPROM-Zelle mit doppelter Polysiliziumschicht und ihr Herstellungsverfahren - Google Patents

EEPROM-Zelle mit doppelter Polysiliziumschicht und ihr Herstellungsverfahren

Info

Publication number
DE69330401T2
DE69330401T2 DE69330401T DE69330401T DE69330401T2 DE 69330401 T2 DE69330401 T2 DE 69330401T2 DE 69330401 T DE69330401 T DE 69330401T DE 69330401 T DE69330401 T DE 69330401T DE 69330401 T2 DE69330401 T2 DE 69330401T2
Authority
DE
Germany
Prior art keywords
manufacturing process
polysilicon layer
eeprom cell
double polysilicon
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330401T
Other languages
English (en)
Other versions
DE69330401D1 (de
Inventor
Federico Pio
Carlo Riva
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=8215122&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69330401(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Publication of DE69330401D1 publication Critical patent/DE69330401D1/de
Application granted granted Critical
Publication of DE69330401T2 publication Critical patent/DE69330401T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
DE69330401T 1993-02-19 1993-02-19 EEPROM-Zelle mit doppelter Polysiliziumschicht und ihr Herstellungsverfahren Expired - Fee Related DE69330401T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830062A EP0612108B1 (de) 1993-02-19 1993-02-19 EEPROM-Zelle mit doppelter Polysiliziumschicht und ihr Herstellungsverfahren

Publications (2)

Publication Number Publication Date
DE69330401D1 DE69330401D1 (de) 2001-08-09
DE69330401T2 true DE69330401T2 (de) 2002-06-06

Family

ID=8215122

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330401T Expired - Fee Related DE69330401T2 (de) 1993-02-19 1993-02-19 EEPROM-Zelle mit doppelter Polysiliziumschicht und ihr Herstellungsverfahren

Country Status (2)

Country Link
EP (1) EP0612108B1 (de)
DE (1) DE69330401T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8383476B2 (en) 2010-09-23 2013-02-26 Globalfoundries Singapore Pte. Ltd. EEPROM cell
US8383475B2 (en) 2010-09-23 2013-02-26 Globalfoundries Singapore Pte. Ltd. EEPROM cell

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6127224A (en) * 1997-12-31 2000-10-03 Stmicroelectronics, S.R.L. Process for forming a non-volatile memory cell with silicided contacts
EP0930655A1 (de) * 1997-12-31 1999-07-21 STMicroelectronics S.r.l. Festwertspeicherzelle und deren Herstellungsverfahren
US6235586B1 (en) * 1999-07-13 2001-05-22 Advanced Micro Devices, Inc. Thin floating gate and conductive select gate in situ doped amorphous silicon material for NAND type flash memory device applications
US6218689B1 (en) 1999-08-06 2001-04-17 Advanced Micro Devices, Inc. Method for providing a dopant level for polysilicon for flash memory devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479203A (en) * 1981-11-16 1984-10-23 Motorola, Inc. Electrically erasable programmable read only memory cell
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
US4852062A (en) * 1987-09-28 1989-07-25 Motorola, Inc. EPROM device using asymmetrical transistor characteristics
JP2645122B2 (ja) * 1989-01-20 1997-08-25 株式会社東芝 不揮発性半導体メモリ
US5081054A (en) * 1989-04-03 1992-01-14 Atmel Corporation Fabrication process for programmable and erasable MOS memory device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8383476B2 (en) 2010-09-23 2013-02-26 Globalfoundries Singapore Pte. Ltd. EEPROM cell
US8383475B2 (en) 2010-09-23 2013-02-26 Globalfoundries Singapore Pte. Ltd. EEPROM cell
DE102011082803B4 (de) * 2010-09-23 2020-03-12 Globalfoundries Singapore Pte. Ltd. Verfahren zur Herstellung einer Speicherzelle und Speicherzelle
DE102011082851B4 (de) * 2010-09-23 2020-03-19 Globalfoundries Singapore Pte. Ltd. Bauelement umfassend eine Zelle mit einem ersten Transistor und einem zweiten Transistor in Reihenschaltung

Also Published As

Publication number Publication date
DE69330401D1 (de) 2001-08-09
EP0612108A1 (de) 1994-08-24
EP0612108B1 (de) 2001-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee