DE10131123A1 - Photoresistzusammensetzung, die einen Photoradikalbildner und einen Photosäurebildner enthält - Google Patents
Photoresistzusammensetzung, die einen Photoradikalbildner und einen Photosäurebildner enthältInfo
- Publication number
- DE10131123A1 DE10131123A1 DE10131123A DE10131123A DE10131123A1 DE 10131123 A1 DE10131123 A1 DE 10131123A1 DE 10131123 A DE10131123 A DE 10131123A DE 10131123 A DE10131123 A DE 10131123A DE 10131123 A1 DE10131123 A1 DE 10131123A1
- Authority
- DE
- Germany
- Prior art keywords
- photoresist
- photoresist composition
- diphenyl
- triflate
- composition according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 104
- 239000000203 mixture Substances 0.000 title claims abstract description 57
- 239000002253 acid Substances 0.000 title claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 17
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 239000003960 organic solvent Substances 0.000 claims abstract description 7
- -1 alkyl radical Chemical class 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 235000010290 biphenyl Nutrition 0.000 claims description 6
- 239000004305 biphenyl Substances 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 6
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 claims description 6
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- PHSXOZKMZYKHLY-UHFFFAOYSA-N 2-hydroxyethyl bicyclo[2.2.1]hept-2-ene-5-carboxylate Chemical compound C1C2C(C(=O)OCCO)CC1C=C2 PHSXOZKMZYKHLY-UHFFFAOYSA-N 0.000 claims description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 150000001925 cycloalkenes Chemical class 0.000 claims description 3
- 125000005574 norbornylene group Chemical group 0.000 claims description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 3
- ZLZZZUYVKRXMRS-UHFFFAOYSA-N (4-benzhydrylphenyl) trifluoromethanesulfonate Chemical compound O(S(=O)(=O)C(F)(F)F)C1=CC=C(C(C2=CC=CC=C2)C2=CC=CC=C2)C=C1 ZLZZZUYVKRXMRS-UHFFFAOYSA-N 0.000 claims description 2
- VUBUXALTYMBEQO-UHFFFAOYSA-N 2,2,3,3,3-pentafluoro-1-phenylpropan-1-one Chemical compound FC(F)(F)C(F)(F)C(=O)C1=CC=CC=C1 VUBUXALTYMBEQO-UHFFFAOYSA-N 0.000 claims description 2
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 claims description 2
- MCVRAVYDLNZUCY-UHFFFAOYSA-N 2-methylhept-5-enoic acid Chemical compound CC=CCCC(C)C(O)=O MCVRAVYDLNZUCY-UHFFFAOYSA-N 0.000 claims description 2
- FYGUSUBEMUKACF-UHFFFAOYSA-N bicyclo[2.2.1]hept-2-ene-5-carboxylic acid Chemical compound C1C2C(C(=O)O)CC1C=C2 FYGUSUBEMUKACF-UHFFFAOYSA-N 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- BZBMBZJUNPMEBD-UHFFFAOYSA-N tert-butyl bicyclo[2.2.1]hept-2-ene-5-carboxylate Chemical compound C1C2C(C(=O)OC(C)(C)C)CC1C=C2 BZBMBZJUNPMEBD-UHFFFAOYSA-N 0.000 claims description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 claims description 2
- CYJIAJHBQYSDNE-UHFFFAOYSA-N [4-(2-methylpropyl)-2,3-diphenylphenyl] trifluoromethanesulfonate Chemical compound C=1C=CC=CC=1C=1C(CC(C)C)=CC=C(OS(=O)(=O)C(F)(F)F)C=1C1=CC=CC=C1 CYJIAJHBQYSDNE-UHFFFAOYSA-N 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- 150000003254 radicals Chemical class 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- WJYYHJOAZPZSQG-UHFFFAOYSA-N (4-methoxy-2,3-diphenylphenyl) trifluoromethanesulfonate Chemical compound C=1C=CC=CC=1C=1C(OC)=CC=C(OS(=O)(=O)C(F)(F)F)C=1C1=CC=CC=C1 WJYYHJOAZPZSQG-UHFFFAOYSA-N 0.000 description 1
- 125000006527 (C1-C5) alkyl group Chemical group 0.000 description 1
- AQTMPYCVJDXCIR-UHFFFAOYSA-N 2-hydroxyethyl bicyclo[2.2.2]oct-2-ene-5-carboxylate Chemical compound C1CC2C(C(=O)OCCO)CC1C=C2 AQTMPYCVJDXCIR-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- RFIHUFUZAHTZOQ-UHFFFAOYSA-N butyl bicyclo[2.2.1]hept-2-ene-5-carboxylate Chemical compound C1C2C(C(=O)OCCCC)CC1C=C2 RFIHUFUZAHTZOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229940070721 polyacrylate Drugs 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LXAWHMFHGHNIHC-UHFFFAOYSA-N sulfanyl trifluoromethanesulfonate Chemical compound FC(F)(F)S(=O)(=O)OS LXAWHMFHGHNIHC-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/117—Free radical
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/124—Carbonyl compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/126—Halogen compound containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000037228A KR100583095B1 (ko) | 2000-06-30 | 2000-06-30 | 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10131123A1 true DE10131123A1 (de) | 2002-02-14 |
Family
ID=19675463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10131123A Withdrawn DE10131123A1 (de) | 2000-06-30 | 2001-06-28 | Photoresistzusammensetzung, die einen Photoradikalbildner und einen Photosäurebildner enthält |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6692891B2 (enExample) |
| JP (1) | JP3875519B2 (enExample) |
| KR (1) | KR100583095B1 (enExample) |
| CN (1) | CN1241065C (enExample) |
| DE (1) | DE10131123A1 (enExample) |
| GB (1) | GB2364392B (enExample) |
| TW (1) | TWI225967B (enExample) |
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| CN101952269B (zh) * | 2007-10-10 | 2014-06-25 | 巴斯夫欧洲公司 | 锍盐引发剂 |
| JP5834630B2 (ja) * | 2011-02-04 | 2015-12-24 | 日立化成株式会社 | 樹脂組成物、感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 |
| JP5884961B2 (ja) * | 2011-04-27 | 2016-03-15 | 日産化学工業株式会社 | 光ラジカル重合開始剤を含む感光性レジスト下層膜形成組成物 |
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| EP2791187A4 (en) * | 2011-12-16 | 2015-07-15 | Univ Akron | SUBSTITUTED PHENACYLMOLECULES AND LIGHT-SENSITIVE POLYMERS |
| JP5772642B2 (ja) * | 2012-02-09 | 2015-09-02 | Jsr株式会社 | 硬化性樹脂組成物、表示素子用硬化膜、表示素子用硬化膜の形成方法及び表示素子 |
| WO2013119134A1 (en) * | 2012-10-16 | 2013-08-15 | Eugen Pavel | Photoresist with rare-earth sensitizers |
| MY201381A (en) | 2013-02-12 | 2024-02-21 | Carbon3D Inc | Continuous liquid interphase printing |
| JP6423801B2 (ja) | 2013-02-12 | 2018-11-14 | カーボン，インコーポレイテッド | ３次元製作のための方法および装置 |
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| US10239255B2 (en) | 2017-04-11 | 2019-03-26 | Molecule Corp | Fabrication of solid materials or films from a polymerizable liquid |
| EP3597694B1 (en) * | 2018-07-17 | 2023-10-11 | Shin-Etsu Chemical Co., Ltd. | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and black matrix |
| NL2022372B1 (en) | 2018-12-17 | 2020-07-03 | What The Future Venture Capital Wtfvc B V | Process for producing a cured 3d product |
| WO2020185692A2 (en) | 2019-03-07 | 2020-09-17 | Northwestern University | Rapid, large volume, dead layer-free 3d printing |
| KR20220016453A (ko) | 2019-04-09 | 2022-02-09 | 아줄 쓰리디, 인크. | 적층 제조에 의해 생성되는 부분들을 신속하게 경화시키고 코팅하는 방법론들 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US245029A (en) * | 1881-08-02 | Sole-fastening staple | ||
| US4245029A (en) * | 1979-08-20 | 1981-01-13 | General Electric Company | Photocurable compositions using triarylsulfonium salts |
| US4968582A (en) * | 1988-06-28 | 1990-11-06 | Mcnc And University Of Nc At Charlotte | Photoresists resistant to oxygen plasmas |
| DE69128274T2 (de) * | 1990-11-05 | 1998-04-23 | Ciba Geigy Ag | Photopolymerisierbare Zusammensetzungen |
| JPH04349463A (ja) * | 1991-05-27 | 1992-12-03 | Nippon Telegr & Teleph Corp <Ntt> | ポジ型レジスト材料 |
| US5393642A (en) * | 1992-12-31 | 1995-02-28 | The University Of North Carolina At Charlotte | Ionic modification of organic resins and photoresists to produce photoactive etch resistant compositions |
| WO1997033198A1 (en) * | 1996-03-07 | 1997-09-12 | The B.F. Goodrich Company | Photoresist compositions comprising polycyclic polymers with acid labile pendant groups |
| KR100265597B1 (ko) * | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
| JP3802179B2 (ja) * | 1997-02-07 | 2006-07-26 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
| JP3832013B2 (ja) | 1997-03-17 | 2006-10-11 | Ｊｓｒ株式会社 | プラズマディスプレイパネル用螢光面の形成方法 |
| JPH1195435A (ja) * | 1997-09-17 | 1999-04-09 | Fuji Photo Film Co Ltd | ポジ型感光性着色組成物 |
| JPH11305433A (ja) * | 1998-04-21 | 1999-11-05 | Toppan Printing Co Ltd | 感光性組成物、感光性着色組成物及びその感光性着色組成物を用いたカラーフィルタ |
| KR100279497B1 (ko) * | 1998-07-16 | 2001-02-01 | 박찬구 | 술포늄 염의 제조방법 |
| KR20000056355A (ko) * | 1999-02-19 | 2000-09-15 | 김영환 | 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 |
| KR100481601B1 (ko) * | 1999-09-21 | 2005-04-08 | 주식회사 하이닉스반도체 | 광산 발생제와 함께 광염기 발생제를 포함하는 포토레지스트 조성물 |
-
2000
- 2000-06-30 KR KR1020000037228A patent/KR100583095B1/ko not_active Expired - Fee Related
-
2001
- 2001-06-12 US US09/879,325 patent/US6692891B2/en not_active Expired - Fee Related
- 2001-06-12 GB GB0114259A patent/GB2364392B/en not_active Expired - Fee Related
- 2001-06-21 TW TW090115057A patent/TWI225967B/zh not_active IP Right Cessation
- 2001-06-28 DE DE10131123A patent/DE10131123A1/de not_active Withdrawn
- 2001-06-29 CN CNB011188952A patent/CN1241065C/zh not_active Expired - Fee Related
- 2001-07-02 JP JP2001200816A patent/JP3875519B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2364392A (en) | 2002-01-23 |
| GB0114259D0 (en) | 2001-08-01 |
| US6692891B2 (en) | 2004-02-17 |
| KR20020002877A (ko) | 2002-01-10 |
| GB2364392B (en) | 2004-08-18 |
| US20020012873A1 (en) | 2002-01-31 |
| CN1330288A (zh) | 2002-01-09 |
| JP3875519B2 (ja) | 2007-01-31 |
| TWI225967B (en) | 2005-01-01 |
| KR100583095B1 (ko) | 2006-05-24 |
| JP2002082440A (ja) | 2002-03-22 |
| CN1241065C (zh) | 2006-02-08 |
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