DE1012697B - p-s-n- und p-i-n-Gleichrichter - Google Patents
p-s-n- und p-i-n-GleichrichterInfo
- Publication number
- DE1012697B DE1012697B DES41476A DES0041476A DE1012697B DE 1012697 B DE1012697 B DE 1012697B DE S41476 A DES41476 A DE S41476A DE S0041476 A DES0041476 A DE S0041476A DE 1012697 B DE1012697 B DE 1012697B
- Authority
- DE
- Germany
- Prior art keywords
- central zone
- rectifier
- highly doped
- thickness
- areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 241000947853 Vibrionales Species 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- -1 Example Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/50—PIN diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL201810D NL201810A (enrdf_load_stackoverflow) | 1954-11-08 | ||
| NL104352D NL104352C (enrdf_load_stackoverflow) | 1954-11-08 | ||
| DES41476A DE1012697B (de) | 1954-11-08 | 1954-11-08 | p-s-n- und p-i-n-Gleichrichter |
| CH338244D CH338244A (de) | 1954-11-08 | 1955-11-01 | p-n-Gleichrichter mit Mittelzone |
| FR1140397D FR1140397A (fr) | 1954-11-08 | 1955-11-07 | Redresseur de type p-n à zone médiane |
| GB31951/55A GB798359A (en) | 1954-11-08 | 1955-11-08 | Improvements in or relating to p-i-n rectifiers |
| US565144A US2843516A (en) | 1954-11-08 | 1956-02-13 | Semiconductor junction rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES41476A DE1012697B (de) | 1954-11-08 | 1954-11-08 | p-s-n- und p-i-n-Gleichrichter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1012697B true DE1012697B (de) | 1957-07-25 |
Family
ID=7484001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES41476A Pending DE1012697B (de) | 1954-11-08 | 1954-11-08 | p-s-n- und p-i-n-Gleichrichter |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH338244A (enrdf_load_stackoverflow) |
| DE (1) | DE1012697B (enrdf_load_stackoverflow) |
| FR (1) | FR1140397A (enrdf_load_stackoverflow) |
| GB (1) | GB798359A (enrdf_load_stackoverflow) |
| NL (2) | NL104352C (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1093021B (de) * | 1959-01-24 | 1960-11-17 | Telefunken Gmbh | Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen |
| DE1127489B (de) * | 1958-06-18 | 1962-04-12 | Western Electric Co | Halbleiterdiode zur Spannungsbegrenzung |
| DE1255134B (de) * | 1959-01-14 | 1967-11-30 | Shockley Transistor Corp | Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens |
-
0
- NL NL201810D patent/NL201810A/xx unknown
- NL NL104352D patent/NL104352C/xx active
-
1954
- 1954-11-08 DE DES41476A patent/DE1012697B/de active Pending
-
1955
- 1955-11-01 CH CH338244D patent/CH338244A/de unknown
- 1955-11-07 FR FR1140397D patent/FR1140397A/fr not_active Expired
- 1955-11-08 GB GB31951/55A patent/GB798359A/en not_active Expired
Non-Patent Citations (1)
| Title |
|---|
| None * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1127489B (de) * | 1958-06-18 | 1962-04-12 | Western Electric Co | Halbleiterdiode zur Spannungsbegrenzung |
| DE1255134B (de) * | 1959-01-14 | 1967-11-30 | Shockley Transistor Corp | Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens |
| DE1255134C2 (de) * | 1959-01-14 | 1973-04-05 | Shockley Transistor Corp | Verfahren zum Erzeugen von Schwingungen oder Leistungsverstaerken von elektrischen Impulsen und Mchrschichtendiode zur Durchfuehrung des Verfahrens |
| DE1093021B (de) * | 1959-01-24 | 1960-11-17 | Telefunken Gmbh | Pnip- bzw. npin-Drifttransistor fuer hohe Frequenzen |
Also Published As
| Publication number | Publication date |
|---|---|
| GB798359A (en) | 1958-07-16 |
| NL201810A (enrdf_load_stackoverflow) | |
| CH338244A (de) | 1959-05-15 |
| NL104352C (enrdf_load_stackoverflow) | |
| FR1140397A (fr) | 1957-07-19 |
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