DE1050448B - - Google Patents

Info

Publication number
DE1050448B
DE1050448B DENDAT1050448D DE1050448DA DE1050448B DE 1050448 B DE1050448 B DE 1050448B DE NDAT1050448 D DENDAT1050448 D DE NDAT1050448D DE 1050448D A DE1050448D A DE 1050448DA DE 1050448 B DE1050448 B DE 1050448B
Authority
DE
Germany
Prior art keywords
buffer layer
reflector
layer
emitter
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DENDAT1050448D
Other languages
German (de)
English (en)
Publication date
Publication of DE1050448B publication Critical patent/DE1050448B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
DENDAT1050448D Pending DE1050448B (enrdf_load_stackoverflow)

Publications (1)

Publication Number Publication Date
DE1050448B true DE1050448B (enrdf_load_stackoverflow) 1959-02-12

Family

ID=590853

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT1050448D Pending DE1050448B (enrdf_load_stackoverflow)

Country Status (1)

Country Link
DE (1) DE1050448B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2513458A1 (de) * 1974-03-28 1975-10-02 Sony Corp Halbleiterbauelement
DE2516877A1 (de) * 1974-04-18 1975-10-23 Sony Corp Halbleiterbauelement
DE2515577A1 (de) * 1974-04-10 1975-10-23 Sony Corp Schaltungsanordnung mit einem transistor hoher eingangsimpedanz

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2513458A1 (de) * 1974-03-28 1975-10-02 Sony Corp Halbleiterbauelement
DE2515577A1 (de) * 1974-04-10 1975-10-23 Sony Corp Schaltungsanordnung mit einem transistor hoher eingangsimpedanz
DE2516877A1 (de) * 1974-04-18 1975-10-23 Sony Corp Halbleiterbauelement

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