DE10081315T1 - Tetrahydrofuran-addierte Gruppe II-ß-Diketonat-Komplexe als Ausgangsreagenzien für chemisches Aufdampfen - Google Patents
Tetrahydrofuran-addierte Gruppe II-ß-Diketonat-Komplexe als Ausgangsreagenzien für chemisches AufdampfenInfo
- Publication number
- DE10081315T1 DE10081315T1 DE10081315T DE10081315T DE10081315T1 DE 10081315 T1 DE10081315 T1 DE 10081315T1 DE 10081315 T DE10081315 T DE 10081315T DE 10081315 T DE10081315 T DE 10081315T DE 10081315 T1 DE10081315 T1 DE 10081315T1
- Authority
- DE
- Germany
- Prior art keywords
- tetrahydrofuran
- vapor deposition
- chemical vapor
- added group
- starting reagents
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003153 chemical reaction reagent Substances 0.000 title 1
- 238000005229 chemical vapour deposition Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/003—Compounds containing elements of Groups 2 or 12 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/321,637 US6218518B1 (en) | 1990-07-06 | 1999-05-28 | Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition |
PCT/US2000/012543 WO2000073314A1 (en) | 1999-05-28 | 2000-05-08 | TETRAHYROFURAN-ADDUCTED GROUP II β-DIKETONATE COMPLEXES AS SOURCE REAGENTS FOR CHEMICAL VAPOR DEPOSITION |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10081315T1 true DE10081315T1 (de) | 2001-08-30 |
DE10081315C2 DE10081315C2 (de) | 2003-12-18 |
Family
ID=23251381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10081315T Expired - Fee Related DE10081315C2 (de) | 1999-05-28 | 2000-05-08 | Tetrahydrofuran-addierte Gruppe II-ß-Diketonat-Komplexe als Ausgangsreagenzien für chemisches Aufdampfen |
Country Status (7)
Country | Link |
---|---|
US (2) | US6218518B1 (de) |
JP (1) | JP2003501360A (de) |
KR (1) | KR20010072098A (de) |
AU (1) | AU4828700A (de) |
DE (1) | DE10081315C2 (de) |
GB (1) | GB2358395B (de) |
WO (1) | WO2000073314A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7323581B1 (en) | 1990-07-06 | 2008-01-29 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
US6218518B1 (en) * | 1990-07-06 | 2001-04-17 | Advanced Technology Materials, Inc. | Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition |
JP3582437B2 (ja) * | 1999-12-24 | 2004-10-27 | 株式会社村田製作所 | 薄膜製造方法及びそれに用いる薄膜製造装置 |
US6620956B2 (en) | 2001-11-16 | 2003-09-16 | Applied Materials, Inc. | Nitrogen analogs of copper II β-diketonates as source reagents for semiconductor processing |
US6960675B2 (en) * | 2003-10-14 | 2005-11-01 | Advanced Technology Materials, Inc. | Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
US7323228B1 (en) * | 2003-10-29 | 2008-01-29 | Lsi Logic Corporation | Method of vaporizing and ionizing metals for use in semiconductor processing |
TWI421366B (zh) | 2006-03-10 | 2014-01-01 | Advanced Tech Materials | 鈦酸鹽、鑭酸鹽及鉭酸鹽電介質薄膜之原子層沉積及化學氣相沉積用之前驅體組成物 |
US20110060165A1 (en) * | 2006-12-05 | 2011-03-10 | Advanced Technology Materials, Inc. | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
WO2008088563A2 (en) * | 2007-01-17 | 2008-07-24 | Advanced Technology Materials, Inc. | Precursor compositions for ald/cvd of group ii ruthenate thin films |
US20080286464A1 (en) * | 2007-05-16 | 2008-11-20 | Air Products And Chemicals, Inc. | Group 2 Metal Precursors For Depositing Multi-Component Metal Oxide Films |
US8247617B2 (en) * | 2007-05-16 | 2012-08-21 | Air Products And Chemicals, Inc. | Group 2 metal precursors for depositing multi-component metal oxide films |
US8455049B2 (en) * | 2007-08-08 | 2013-06-04 | Advanced Technology Materials, Inc. | Strontium precursor for use in chemical vapor deposition, atomic layer deposition and rapid vapor deposition |
US20090275164A1 (en) * | 2008-05-02 | 2009-11-05 | Advanced Technology Materials, Inc. | Bicyclic guanidinates and bridging diamides as cvd/ald precursors |
US8168811B2 (en) * | 2008-07-22 | 2012-05-01 | Advanced Technology Materials, Inc. | Precursors for CVD/ALD of metal-containing films |
US8663735B2 (en) * | 2009-02-13 | 2014-03-04 | Advanced Technology Materials, Inc. | In situ generation of RuO4 for ALD of Ru and Ru related materials |
US9373677B2 (en) | 2010-07-07 | 2016-06-21 | Entegris, Inc. | Doping of ZrO2 for DRAM applications |
US9443736B2 (en) | 2012-05-25 | 2016-09-13 | Entegris, Inc. | Silylene compositions and methods of use thereof |
US10186570B2 (en) | 2013-02-08 | 2019-01-22 | Entegris, Inc. | ALD processes for low leakage current and low equivalent oxide thickness BiTaO films |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4501602A (en) * | 1982-09-15 | 1985-02-26 | Corning Glass Works | Process for making sintered glasses and ceramics |
NL8901507A (nl) | 1989-06-14 | 1991-01-02 | Tno | Vluchtige aardkalimetaal-organische verbindingen en werkwijze voor de bereiding van gelaagde materialen met aardkalimetaaloxiden of -fluoriden uit deze verbindingen. |
US5280012A (en) * | 1990-07-06 | 1994-01-18 | Advanced Technology Materials Inc. | Method of forming a superconducting oxide layer by MOCVD |
US5225561A (en) * | 1990-07-06 | 1993-07-06 | Advanced Technology Materials, Inc. | Source reagent compounds for MOCVD of refractory films containing group IIA elements |
US5840897A (en) * | 1990-07-06 | 1998-11-24 | Advanced Technology Materials, Inc. | Metal complex source reagents for chemical vapor deposition |
US5820664A (en) * | 1990-07-06 | 1998-10-13 | Advanced Technology Materials, Inc. | Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same |
US5362328A (en) * | 1990-07-06 | 1994-11-08 | Advanced Technology Materials, Inc. | Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem |
US6218518B1 (en) * | 1990-07-06 | 2001-04-17 | Advanced Technology Materials, Inc. | Tetrahydrofuran-adducted group II β-diketonate complexes as source reagents for chemical vapor deposition |
US5453494A (en) * | 1990-07-06 | 1995-09-26 | Advanced Technology Materials, Inc. | Metal complex source reagents for MOCVD |
US5204314A (en) * | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
JP3488252B2 (ja) | 1991-10-02 | 2004-01-19 | 日本酸素株式会社 | 化学気相析出用有機金属錯体溶液 |
JP3094868B2 (ja) * | 1995-09-07 | 2000-10-03 | 三菱マテリアル株式会社 | 高純度誘電体薄膜の作製方法 |
JPH10324970A (ja) | 1997-03-28 | 1998-12-08 | Dowa Mining Co Ltd | Cvd用原料およびこれを用いた成膜法 |
JPH1174487A (ja) * | 1997-06-30 | 1999-03-16 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
1999
- 1999-05-28 US US09/321,637 patent/US6218518B1/en not_active Expired - Fee Related
-
2000
- 2000-05-08 DE DE10081315T patent/DE10081315C2/de not_active Expired - Fee Related
- 2000-05-08 GB GB0028323A patent/GB2358395B/en not_active Expired - Fee Related
- 2000-05-08 KR KR1020017001245A patent/KR20010072098A/ko not_active Application Discontinuation
- 2000-05-08 JP JP2001500639A patent/JP2003501360A/ja active Pending
- 2000-05-08 WO PCT/US2000/012543 patent/WO2000073314A1/en not_active Application Discontinuation
- 2000-05-08 AU AU48287/00A patent/AU4828700A/en not_active Abandoned
-
2001
- 2001-02-22 US US09/791,005 patent/US6504015B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20010007034A1 (en) | 2001-07-05 |
US6504015B2 (en) | 2003-01-07 |
US6218518B1 (en) | 2001-04-17 |
GB0028323D0 (en) | 2001-01-03 |
DE10081315C2 (de) | 2003-12-18 |
JP2003501360A (ja) | 2003-01-14 |
AU4828700A (en) | 2000-12-18 |
GB2358395A (en) | 2001-07-25 |
GB2358395B (en) | 2004-02-25 |
WO2000073314A1 (en) | 2000-12-07 |
KR20010072098A (ko) | 2001-07-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8607 | Notification of search results after publication | ||
8304 | Grant after examination procedure | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |