DE1002087B - Gehaeuse fuer Richtleiter, Transistoren od. dgl. - Google Patents
Gehaeuse fuer Richtleiter, Transistoren od. dgl.Info
- Publication number
- DE1002087B DE1002087B DES44477A DES0044477A DE1002087B DE 1002087 B DE1002087 B DE 1002087B DE S44477 A DES44477 A DE S44477A DE S0044477 A DES0044477 A DE S0044477A DE 1002087 B DE1002087 B DE 1002087B
- Authority
- DE
- Germany
- Prior art keywords
- housing
- insulating layer
- thermally conductive
- transistors
- plastic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims description 3
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229920003002 synthetic resin Polymers 0.000 claims description 2
- 239000000057 synthetic resin Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 239000013590 bulk material Substances 0.000 claims 1
- 229920003319 Araldite® Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
- H01G4/206—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 inorganic and synthetic material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S165/00—Heat exchange
- Y10S165/905—Materials of manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Organic Insulating Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Connection Of Batteries Or Terminals (AREA)
- Push-Button Switches (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Thermistors And Varistors (AREA)
Description
- Gehäuse für Richtleiter, Transistoren od. dgl. Die Hauptpatentanmeldung S 41978 VIIIc/21g bezieht sich auf einen Transistor mit auf das Gehäuse gut wärmeleitend aufgesetztem Kollektor und einer außerhalb des Gehäuses angebrachten Isolierschicht, auf die eine Masse, welche gegebenenfalls in einen Schraubbolzen übergeht, aufgesetzt ist. Die Isolierschicht wirkt gemäß dem Hauptpatent gleichzeitig als Dielektrikum eines Kondensators, dessen eine Belegung das Gehäuse und dessen andere Belegung die Masse ist. Die Erfindung löst die Aufgabe einer besonders zweckmäßigen Ausbildung des isolierenden Dielektrikums.
- Gemäß der Erfindung besteht die Isolierschicht aus einem Kunststoff, z. B. Kunstharz, der gegebenenfalls aushärtet oder zähflüssig-plastisch bleibt und dem ein pulverförmiger, fester und gut wärmeleitender Isolator, z. B. aus Quarz oder Keramik, eingelagert ist. Die Größe der einzelnen Quarzkörner ist dabei von einheitlicher Korngröße und so groß bemessen, wie der Abstand der beiden Belegungen voneinander sein soll.
- Die Isolierschicht ist so aufgebracht, daß jeweils nur eine Lage Quarzkörner zwischen den entgegengesetzten Belegungen vorhanden ist. Durch diese Ausbildung des Dielektrikums wird der Vorteil erreicht, daß es bei besonders guter Wärmeleitung gleichzeitig einen wohldefinierten Abstand der Belegung festlegt.
- In der Zeichnung ist eine Ausführungsform der Einrichtung nach der Erfindung beispielsweise dargestellt. Sie entspricht im wesentlichen der Fig. 3 der Hauptpatentanmeldung.
- 1 bedeutet einen p-n-p-Flächentransistor, auf den eine Metallplatte 2 auf der Kollektorseite aufgelötet ist. Auf der Metallplatte 2 ist eine Isolierschicht 8 und auf diese eine Metallplatte 9 mit einem Bolzen 10 aufgesetzt. Beide sind durch Klammern 11 zusammengehalten. Erfindungsgemäß besteht die Isolierschicht 8 aus einem isolierenden Kunststoff, im Beispielsfalle Araldit 12, in welches Quarzkörner 13 von gleicher Größe derart eingelagert sind, daß sie eine einfache Lage von Quarzkörnern ergeben, welche den Abstand zwischen den Schichten 2 und 9 eindeutig definiert. Für einen Transistor von 1½ bis 2 Watt beträgt die Korngröße der Quarzkörner etwa 20 µ; es ist aber auch denkbar, etwas größere Körner von bis zu etwa 100 µ zur Abstandsfestlegung zu verwenden und die Zwischenräume mit kleineren Körnern von etwa 5 µ. auszufüllen.
Claims (2)
- PATENTANSPRÜCHE: 1. Gehäuse für Richtleiter, Transistoren od. dgl., deren mindestens eine Elektrode in guter wärmeleitender Verbindung mit mindestens einem Teil des Gehäuses steht, welcher unter Zwischenschaltung einer elektrischen Isolierschicht auf eine zur Wärmeaufnahme dienenden Massegut wärmeleitend aufsetzbar ist, und bei denen die Isolierschicht außerhalb des Gehäuses angeordnet und mit diesem baulich derart vereinigt ist, daß sie als Dielektrikum eines Kondensators dient, dessen eine Belegung das Gehäuse und dessen andere Belegung ein auf die zur Wärmeaufnahme dienende Masse aufsetzbarer Metallbeil ist, nach der Hauptpatentanmeldung S 41978 VIII c/21 g, dadurch gekennzeichnet, daß die Isolierschicht aus einem Kunststoff, z. B. Kunstharz, der gegebenenfalls aushärtet oder zähflüssig-plastisch bleibt, besteht, dem ein pulverförmiger, fester und gut wärmeleitender Isolator, z. B. aus Quarz oder Keramik, eingelagert ist.
- 2. Gehäuse nach Anspruch 1, dadurch Bekenn, zeichnest, daß die einzelnen Körner des eingelagerten pulverförmigen Isolators unter sich nahezu gleich groß sind und eine Lage bilden.
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL100919D NL100919C (de) | 1954-12-16 | ||
DENDAT1066666D DE1066666B (de) | 1954-12-16 | ||
NL269872D NL269872A (de) | 1954-12-16 | ||
NL202863D NL202863A (de) | 1954-12-16 | ||
NL110715D NL110715C (de) | 1954-12-16 | ||
DES41978A DE976537C (de) | 1954-12-16 | 1954-12-16 | Gehaeuse fuer Richtleiter oder Transistoren |
DES44477A DE1002087B (de) | 1954-12-16 | 1955-06-24 | Gehaeuse fuer Richtleiter, Transistoren od. dgl. |
US552922A US2817048A (en) | 1954-12-16 | 1955-12-13 | Transistor arrangement |
CH341235D CH341235A (de) | 1954-12-16 | 1955-12-13 | Halbleiteranordnung |
FR1140504D FR1140504A (fr) | 1954-12-16 | 1955-12-15 | Semi-conducteurs tels que redresseurs et transistors |
GB36207/55A GB824265A (en) | 1954-12-16 | 1955-12-16 | Improvements in or relating to housings for electrical components |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES41978A DE976537C (de) | 1954-12-16 | 1954-12-16 | Gehaeuse fuer Richtleiter oder Transistoren |
DES44477A DE1002087B (de) | 1954-12-16 | 1955-06-24 | Gehaeuse fuer Richtleiter, Transistoren od. dgl. |
DES0046368 | 1955-11-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1002087B true DE1002087B (de) | 1957-02-07 |
Family
ID=27212574
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT1066666D Pending DE1066666B (de) | 1954-12-16 | ||
DES41978A Expired DE976537C (de) | 1954-12-16 | 1954-12-16 | Gehaeuse fuer Richtleiter oder Transistoren |
DES44477A Pending DE1002087B (de) | 1954-12-16 | 1955-06-24 | Gehaeuse fuer Richtleiter, Transistoren od. dgl. |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DENDAT1066666D Pending DE1066666B (de) | 1954-12-16 | ||
DES41978A Expired DE976537C (de) | 1954-12-16 | 1954-12-16 | Gehaeuse fuer Richtleiter oder Transistoren |
Country Status (6)
Country | Link |
---|---|
US (1) | US2817048A (de) |
CH (1) | CH341235A (de) |
DE (3) | DE976537C (de) |
FR (1) | FR1140504A (de) |
GB (1) | GB824265A (de) |
NL (4) | NL100919C (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1110764B (de) * | 1958-10-21 | 1961-07-13 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1226715B (de) * | 1961-02-15 | 1966-10-13 | Philips Patentverwaltung | Halbleiterbauelement mit einem flaechenhaft an Stromzufuehrungen angeloeteten Halbleiterelement und Verfahren zu seiner Herstellung |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB818464A (en) * | 1956-03-12 | 1959-08-19 | Gen Electric Co Ltd | Improvements in or relating to semiconductor devices |
NL101297C (de) * | 1956-06-12 | |||
US3126509A (en) * | 1956-07-27 | 1964-03-24 | Electrical condenser having two electrically | |
US2905873A (en) * | 1956-09-17 | 1959-09-22 | Rca Corp | Semiconductor power devices and method of manufacture |
US2955242A (en) * | 1956-11-27 | 1960-10-04 | Raytheon Co | Hermetically sealed power transistors |
GB831295A (en) * | 1957-08-08 | 1960-03-30 | Pye Ltd | Improvements in or relating to semiconductor devices |
US3089067A (en) * | 1957-09-30 | 1963-05-07 | Gen Motors Corp | Semiconductor device |
US2896136A (en) * | 1958-04-23 | 1959-07-21 | Philco Corp | Semiconductor units |
US3134049A (en) * | 1958-05-13 | 1964-05-19 | Globe Union Inc | Modular electrical units and assemblies thereof |
US2963632A (en) * | 1958-09-10 | 1960-12-06 | Gen Electric | Cantilever semiconductor mounting |
US3058041A (en) * | 1958-09-12 | 1962-10-09 | Raytheon Co | Electrical cooling devices |
US2948835A (en) * | 1958-10-21 | 1960-08-09 | Texas Instruments Inc | Transistor structure |
GB945747A (de) * | 1959-02-06 | Texas Instruments Inc | ||
US3018424A (en) * | 1959-05-28 | 1962-01-23 | Westinghouse Electric Corp | Rectifier apparatus |
US3025437A (en) * | 1960-02-05 | 1962-03-13 | Lear Inc | Semiconductor heat sink and electrical insulator |
US3171046A (en) * | 1960-06-23 | 1965-02-23 | Gen Motors Corp | Ignition device |
NL275010A (de) * | 1961-03-28 | 1900-01-01 | ||
US3248471A (en) * | 1962-02-07 | 1966-04-26 | Bendix Corp | Heat sinks |
US3274456A (en) * | 1962-11-21 | 1966-09-20 | Gen Instrument Corp | Rectifier assembly and method of making same |
US3311798A (en) * | 1963-09-27 | 1967-03-28 | Trw Semiconductors Inc | Component package |
GB1053069A (de) * | 1963-06-28 | |||
US3265982A (en) * | 1963-10-24 | 1966-08-09 | Hazeltine Research Inc | Common emitter transistor amplifier including a heat sink |
US3229757A (en) * | 1963-12-16 | 1966-01-18 | Richleu Corp | Heat dissipator apparatus for a transistor |
DE1281582C2 (de) * | 1964-08-27 | 1975-02-20 | Robert Bosch Gmbh, 7000 Stuttgart | Anordnung eines in einer elektrisch leitfaehigen kapsel untergebrachten halbleiterbauelementes an einem zu seiner halterung und waermeableitung dienenden bauteil |
US3327180A (en) * | 1964-09-23 | 1967-06-20 | Pass & Seymour Inc | Mounting for semiconductors |
US3457476A (en) * | 1965-02-12 | 1969-07-22 | Hughes Aircraft Co | Gate cooling structure for field effect transistors |
US3377525A (en) * | 1965-12-03 | 1968-04-09 | Gen Electric | Electrically insulated mounting bracket for encased semicon-ductor device |
US3471754A (en) * | 1966-03-26 | 1969-10-07 | Sony Corp | Isolation structure for integrated circuits |
DE1564665C3 (de) * | 1966-07-18 | 1975-10-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement und Verfahren zu seiner Herstellung |
JPS4697Y1 (de) * | 1967-03-09 | 1971-01-06 | ||
US3522491A (en) * | 1967-05-31 | 1970-08-04 | Wakefield Eng Inc | Heat transfer apparatus for cooling semiconductor components |
US3678995A (en) * | 1970-06-22 | 1972-07-25 | Rca Corp | Support for electrical components and method of making the same |
US3738422A (en) * | 1971-05-04 | 1973-06-12 | Allen Bradley Co | Heat dissipating insulating mounting |
JPS5153155Y2 (de) * | 1973-07-31 | 1976-12-18 | ||
US3898594A (en) * | 1973-11-02 | 1975-08-05 | Trw Inc | Microwave semiconductor device package |
US4303935A (en) * | 1977-12-13 | 1981-12-01 | Robert Bosch Gmbh | Semiconductor apparatus with electrically insulated heat sink |
DE2755404A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Halbleiteranordnung |
US4295151A (en) * | 1980-01-14 | 1981-10-13 | Rca Corporation | Method of bonding two parts together and article produced thereby |
JPS6066843A (ja) * | 1983-09-22 | 1985-04-17 | Hitachi Ltd | 集積回路パツケ−ジ |
US4920405A (en) * | 1986-11-28 | 1990-04-24 | Fuji Electric Co., Ltd. | Overcurrent limiting semiconductor device |
DE68923778T2 (de) * | 1988-12-01 | 1996-04-11 | Akzo Nobel Nv | Halbleitermodul. |
US5212625A (en) * | 1988-12-01 | 1993-05-18 | Akzo Nv | Semiconductor module having projecting cooling fin groups |
US5313094A (en) * | 1992-01-28 | 1994-05-17 | International Business Machines Corportion | Thermal dissipation of integrated circuits using diamond paths |
CA2819480A1 (en) * | 2010-12-02 | 2012-06-07 | Nestec S.A. | Low-inertia thermal sensor in a beverage machine |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE548391C (de) * | 1932-04-11 | Koch & Sterzel Akt Ges | Trockengleichrichter mit einem die Anschlussenden ueberbrueckenden Kondensator | |
DE869649C (de) * | 1934-03-01 | 1953-03-05 | Julius Pintsch K G | Elektronenroehre zum Anfachen, insbesondere Verstaerken, Erzeugen oder Empfangen vonultrahochfrequenten, elektromagnetischen Schwingungen |
DE678693C (de) * | 1935-06-05 | 1939-07-19 | Aeg | Elektrisches Isolierband |
GB473574A (en) * | 1935-10-24 | 1937-10-15 | Lorenz C Ag | Electron discharge tubes |
DE746985C (de) * | 1938-05-17 | 1944-09-01 | Siemens Reiniger Werke Ag | Elektrische Entladungsroehre, vorzugsweise mit Gas- oder Dampffuellung und Gluehkathode |
GB584672A (en) * | 1944-01-14 | 1947-01-21 | Erich Schaefer | Improvements in or relating to electrical condensers having plastic film dielectrics |
DE863372C (de) * | 1944-09-30 | 1953-01-15 | Siemens Ag | Kristalldetektor zur Spannungsmessung oder Demodulation elektrischer Wellen |
US2528113A (en) * | 1946-10-18 | 1950-10-31 | Rca Corp | Single unit capacitor and resistor |
US2738452A (en) * | 1950-06-30 | 1956-03-13 | Siemens Ag | Dry multi-pellet rectifiers |
GB697070A (en) * | 1951-01-11 | 1953-09-16 | Erie Resistor Corp | Improvements in electric components comprising resistances and capacitances |
BE527420A (de) * | 1953-03-20 | |||
US2712620A (en) * | 1954-08-10 | 1955-07-05 | Int Standard Electric Corp | Blocking layer rectifier and housing therefor |
-
0
- NL NL110715D patent/NL110715C/xx active
- NL NL202863D patent/NL202863A/xx unknown
- DE DENDAT1066666D patent/DE1066666B/de active Pending
- NL NL269872D patent/NL269872A/xx unknown
- NL NL100919D patent/NL100919C/xx active
-
1954
- 1954-12-16 DE DES41978A patent/DE976537C/de not_active Expired
-
1955
- 1955-06-24 DE DES44477A patent/DE1002087B/de active Pending
- 1955-12-13 CH CH341235D patent/CH341235A/de unknown
- 1955-12-13 US US552922A patent/US2817048A/en not_active Expired - Lifetime
- 1955-12-15 FR FR1140504D patent/FR1140504A/fr not_active Expired
- 1955-12-16 GB GB36207/55A patent/GB824265A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1110764B (de) * | 1958-10-21 | 1961-07-13 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1226715B (de) * | 1961-02-15 | 1966-10-13 | Philips Patentverwaltung | Halbleiterbauelement mit einem flaechenhaft an Stromzufuehrungen angeloeteten Halbleiterelement und Verfahren zu seiner Herstellung |
Also Published As
Publication number | Publication date |
---|---|
NL110715C (de) | 1900-01-01 |
NL269872A (de) | 1900-01-01 |
DE1066666B (de) | 1959-10-08 |
NL202863A (de) | 1900-01-01 |
FR1140504A (fr) | 1957-07-24 |
US2817048A (en) | 1957-12-17 |
NL100919C (de) | 1900-01-01 |
DE976537C (de) | 1963-10-31 |
CH341235A (de) | 1959-09-30 |
GB824265A (en) | 1959-11-25 |
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