CY1113790T1 - Θειωση και σεληνοποιηση στρωματων cigs εναποτεθεντων ηλεκτρολυτικα με θερμικη ανοπτηση - Google Patents

Θειωση και σεληνοποιηση στρωματων cigs εναποτεθεντων ηλεκτρολυτικα με θερμικη ανοπτηση

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Publication number
CY1113790T1
CY1113790T1 CY20131100216T CY131100216T CY1113790T1 CY 1113790 T1 CY1113790 T1 CY 1113790T1 CY 20131100216 T CY20131100216 T CY 20131100216T CY 131100216 T CY131100216 T CY 131100216T CY 1113790 T1 CY1113790 T1 CY 1113790T1
Authority
CY
Cyprus
Prior art keywords
cigs
sulfuration
labeling
labels
therapeutic electrical
Prior art date
Application number
CY20131100216T
Other languages
English (en)
Inventor
Stèphane TAUNIER
Daniel Lincot
Jean-François Guillemoles
Negar Naghavi
Denis Guimard
Original Assignee
Centre National De La Recherche Scientifique (Cnrs)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National De La Recherche Scientifique (Cnrs) filed Critical Centre National De La Recherche Scientifique (Cnrs)
Publication of CY1113790T1 publication Critical patent/CY1113790T1/el

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Η εφεύρεση αναφέρεται σε μια μέθοδο παρασκευής σε λεπτά στρώματα ημιαγωγών κραμάτων του τύπου I-III-VI2, περιεχόντων θείο, για φωτοβολταϊκές εφαρμογές, κατά την οποία εναποτίθεται αρχικά επί ενός υποστρώματος μια ετεροδομή περιλαμβάνουσα ένα λεπτό στρώμα προδρόμου I-III-VI2, πρακτικά άμορφου, κι' ένα λεπτό στρώμα περιέχον τουλάχιστον θείο, και στην συνέχεια υποβάλλεται σε ανόπτηση η ετεροδομή για την ταυτόχρονη διευκόλυνση της διάχυσης του θείου εντός του στρώματος προδρόμου, και την τουλάχιστον μερική κρυσταλλοποίηση του κράματος I-III-VI2.
CY20131100216T 2005-05-25 2013-03-12 Θειωση και σεληνοποιηση στρωματων cigs εναποτεθεντων ηλεκτρολυτικα με θερμικη ανοπτηση CY1113790T1 (el)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0505277A FR2886460B1 (fr) 2005-05-25 2005-05-25 Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
EP06755519A EP1883975B1 (fr) 2005-05-25 2006-05-19 Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique

Publications (1)

Publication Number Publication Date
CY1113790T1 true CY1113790T1 (el) 2016-07-27

Family

ID=35711841

Family Applications (1)

Application Number Title Priority Date Filing Date
CY20131100216T CY1113790T1 (el) 2005-05-25 2013-03-12 Θειωση και σεληνοποιηση στρωματων cigs εναποτεθεντων ηλεκτρολυτικα με θερμικη ανοπτηση

Country Status (12)

Country Link
US (1) US8741685B2 (el)
EP (1) EP1883975B1 (el)
JP (1) JP5253154B2 (el)
AU (1) AU2006251092B2 (el)
CA (1) CA2610332C (el)
CY (1) CY1113790T1 (el)
DK (1) DK1883975T3 (el)
ES (1) ES2401650T3 (el)
FR (1) FR2886460B1 (el)
PL (1) PL1883975T3 (el)
PT (1) PT1883975E (el)
WO (1) WO2006125898A1 (el)

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TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
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Also Published As

Publication number Publication date
US8741685B2 (en) 2014-06-03
CA2610332A1 (fr) 2006-11-30
JP2008543038A (ja) 2008-11-27
AU2006251092A8 (en) 2006-11-30
DK1883975T3 (da) 2013-03-25
PL1883975T3 (pl) 2013-05-31
CA2610332C (fr) 2016-01-26
PT1883975E (pt) 2013-03-11
AU2006251092A1 (en) 2006-11-30
JP5253154B2 (ja) 2013-07-31
AU2006251092B2 (en) 2011-03-10
WO2006125898A1 (fr) 2006-11-30
EP1883975B1 (fr) 2012-12-19
EP1883975A1 (fr) 2008-02-06
FR2886460B1 (fr) 2007-08-24
US20090130796A1 (en) 2009-05-21
FR2886460A1 (fr) 2006-12-01
ES2401650T3 (es) 2013-04-23

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