PL1883975T3 - Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne - Google Patents

Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne

Info

Publication number
PL1883975T3
PL1883975T3 PL06755519T PL06755519T PL1883975T3 PL 1883975 T3 PL1883975 T3 PL 1883975T3 PL 06755519 T PL06755519 T PL 06755519T PL 06755519 T PL06755519 T PL 06755519T PL 1883975 T3 PL1883975 T3 PL 1883975T3
Authority
PL
Poland
Prior art keywords
selenisation
sulphurisation
thermal annealing
electrolytically deposited
cigs layers
Prior art date
Application number
PL06755519T
Other languages
English (en)
Inventor
Stèphane TAUNIER
Daniel Lincot
Jean-François Guillemoles
Negar Naghavi
Denis Guimard
Original Assignee
Centre Nat Rech Scient
Electricite De France
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient, Electricite De France filed Critical Centre Nat Rech Scient
Publication of PL1883975T3 publication Critical patent/PL1883975T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
PL06755519T 2005-05-25 2006-05-19 Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne PL1883975T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0505277A FR2886460B1 (fr) 2005-05-25 2005-05-25 Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
PCT/FR2006/001149 WO2006125898A1 (fr) 2005-05-25 2006-05-19 Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
EP06755519A EP1883975B1 (fr) 2005-05-25 2006-05-19 Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique

Publications (1)

Publication Number Publication Date
PL1883975T3 true PL1883975T3 (pl) 2013-05-31

Family

ID=35711841

Family Applications (1)

Application Number Title Priority Date Filing Date
PL06755519T PL1883975T3 (pl) 2005-05-25 2006-05-19 Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne

Country Status (12)

Country Link
US (1) US8741685B2 (pl)
EP (1) EP1883975B1 (pl)
JP (1) JP5253154B2 (pl)
AU (1) AU2006251092B2 (pl)
CA (1) CA2610332C (pl)
CY (1) CY1113790T1 (pl)
DK (1) DK1883975T3 (pl)
ES (1) ES2401650T3 (pl)
FR (1) FR2886460B1 (pl)
PL (1) PL1883975T3 (pl)
PT (1) PT1883975E (pl)
WO (1) WO2006125898A1 (pl)

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FR2886460B1 (fr) * 2005-05-25 2007-08-24 Electricite De France Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
JP4384237B2 (ja) * 2008-05-19 2009-12-16 昭和シェル石油株式会社 Ｃｉｓ系薄膜太陽電池の製造方法
DE102008024230A1 (de) * 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
TWI373851B (en) * 2008-11-25 2012-10-01 Nexpower Technology Corp Stacked-layered thin film solar cell and manufacturing method thereof
US20110023750A1 (en) * 2009-07-28 2011-02-03 Kuan-Che Wang Ink composition for forming absorbers of thin film cells and producing method thereof
KR101130067B1 (ko) * 2009-09-04 2012-03-28 재단법인대구경북과학기술원 화합물 반도체 태양전지 및 광흡수층 제조방법
US7923628B2 (en) * 2009-09-09 2011-04-12 International Business Machines Corporation Method of controlling the composition of a photovoltaic thin film
US20110108115A1 (en) * 2009-11-11 2011-05-12 International Business Machines Corporation Forming a Photovoltaic Device
DE102009053532B4 (de) * 2009-11-18 2017-01-05 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur Herstellung einer Verbindungshalbleiterschicht
TW201124544A (en) * 2009-11-24 2011-07-16 Applied Quantum Technology Llc Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
US8153469B2 (en) * 2009-12-07 2012-04-10 Solopower, Inc. Reaction methods to form group IBIIIAVIA thin film solar cell absorbers
US20110203655A1 (en) * 2010-02-22 2011-08-25 First Solar, Inc. Photovoltaic device protection layer
US7998789B1 (en) * 2010-04-16 2011-08-16 Jenn Feng New Energy Co., Ltd. Method and system for forming copper indium gallium sulfur selenide absorption layer and cadmium sulfide buffer layer under non-vacuum condition
FR2966282B1 (fr) 2010-10-18 2013-02-15 Nexcis Controle de la stoechiometrie de couches i-iii-vi pour des applications photovoltaiques a partir de conditions d'electrolyse perfectionnees.
JP5552042B2 (ja) 2010-12-27 2014-07-16 インターナショナル・ビジネス・マシーンズ・コーポレーション プログラム解析の方法、システムおよびプログラム
KR20120080045A (ko) * 2011-01-06 2012-07-16 한국전자통신연구원 태양전지의 제조방법
US20120222730A1 (en) 2011-03-01 2012-09-06 International Business Machines Corporation Tandem solar cell with improved absorption material
KR101317834B1 (ko) * 2011-04-07 2013-10-15 전북대학교산학협력단 고체 확산법을 이용한 ｃｉｇ 박막의 셀렌화 및 황산화 방법
KR101223415B1 (ko) * 2011-04-11 2013-01-17 칼릭스전자화학(주) 전해도금을 이용한 ｃｉｇｓ 박막 제조방법 및 이에 의한 태양전지
JP5764016B2 (ja) * 2011-09-07 2015-08-12 日東電工株式会社 Ｃｉｇｓ膜の製法およびそれを用いるｃｉｇｓ太陽電池の製法
TWI456779B (zh) 2011-12-28 2014-10-11 Ind Tech Res Inst 光吸收層之改質方法
US8728855B2 (en) * 2012-09-28 2014-05-20 First Solar, Inc. Method of processing a semiconductor assembly
US10546964B2 (en) * 2012-11-15 2020-01-28 Taiwan Semiconductor Manufacturing Co., Ltd. Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same
US20140193941A1 (en) * 2013-01-10 2014-07-10 Samsung Sdi Co., Ltd. Method for manufacturing solar cell
KR101467462B1 (ko) * 2013-05-03 2014-12-02 (주) 다쓰테크 박막 화합물 태양전지 제조 방법
FR3006109B1 (fr) * 2013-05-24 2016-09-16 Commissariat Energie Atomique Procede de realisation de la jonction p-n d'une cellule photovoltaique en couches minces et procede d'obtention correspondant d'une cellule photovoltaique.
KR101542343B1 (ko) * 2013-09-27 2015-08-06 재단법인대구경북과학기술원 박막 태양전지 및 이의 제조방법
KR101582121B1 (ko) * 2014-04-03 2016-01-05 한국과학기술연구원 이종 적층형 cis계 광활성층 박막의 제조방법, 이로부터 제조된 cis계 광활성층 박막 및 상기 박막을 포함하는 박막 태양전지
KR101686478B1 (ko) * 2015-04-22 2016-12-28 한국과학기술연구원 태양전지용 CIGSSe 박막 및 이의 제조방법, 이를 이용한 태양전지
TWI617684B (zh) * 2016-10-07 2018-03-11 國家中山科學研究院 Integrated fast selenium vulcanization process equipment
CN110957393B (zh) * 2019-12-13 2022-07-19 深圳先进技术研究院 薄膜太阳能电池的光吸收层的制备方法
JP7457310B1 (ja) 2023-06-12 2024-03-28 株式会社Pxp 薄膜太陽電池及び薄膜太陽電池の製造方法

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Also Published As

Publication number Publication date
FR2886460A1 (fr) 2006-12-01
AU2006251092B2 (en) 2011-03-10
WO2006125898A1 (fr) 2006-11-30
AU2006251092A8 (en) 2006-11-30
ES2401650T3 (es) 2013-04-23
EP1883975B1 (fr) 2012-12-19
DK1883975T3 (da) 2013-03-25
CY1113790T1 (el) 2016-07-27
FR2886460B1 (fr) 2007-08-24
JP5253154B2 (ja) 2013-07-31
PT1883975E (pt) 2013-03-11
JP2008543038A (ja) 2008-11-27
EP1883975A1 (fr) 2008-02-06
US8741685B2 (en) 2014-06-03
CA2610332A1 (fr) 2006-11-30
AU2006251092A1 (en) 2006-11-30
US20090130796A1 (en) 2009-05-21
CA2610332C (fr) 2016-01-26

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