CY1105327T1 - Αισθητηρας φαινομενου χαλλ - Google Patents

Αισθητηρας φαινομενου χαλλ

Info

Publication number
CY1105327T1
CY1105327T1 CY20061101168T CY061101168T CY1105327T1 CY 1105327 T1 CY1105327 T1 CY 1105327T1 CY 20061101168 T CY20061101168 T CY 20061101168T CY 061101168 T CY061101168 T CY 061101168T CY 1105327 T1 CY1105327 T1 CY 1105327T1
Authority
CY
Cyprus
Prior art keywords
layer
deposited
substrate
active layer
thin
Prior art date
Application number
CY20061101168T
Other languages
Greek (el)
English (en)
Inventor
Jean-Louis Robert
Julien Pernot
Jean Camassel
Sylvie Contreras
Original Assignee
Centre National De La Recherche Scientifique (Cnrs)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National De La Recherche Scientifique (Cnrs) filed Critical Centre National De La Recherche Scientifique (Cnrs)
Publication of CY1105327T1 publication Critical patent/CY1105327T1/el

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07Hall effect devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00Hall-effect devices
    • H10N52/101Semiconductor Hall-effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Window Of Vehicle (AREA)
  • Measuring Magnetic Variables (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Push-Button Switches (AREA)
  • Electrophonic Musical Instruments (AREA)
CY20061101168T 2000-08-30 2006-08-23 Αισθητηρας φαινομενου χαλλ CY1105327T1 (el)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0011087A FR2813443B1 (fr) 2000-08-30 2000-08-30 Capteur a effet hall
PCT/FR2001/002703 WO2002019442A1 (fr) 2000-08-30 2001-08-30 Capteur a effet hall

Publications (1)

Publication Number Publication Date
CY1105327T1 true CY1105327T1 (el) 2010-03-03

Family

ID=8853827

Family Applications (1)

Application Number Title Priority Date Filing Date
CY20061101168T CY1105327T1 (el) 2000-08-30 2006-08-23 Αισθητηρας φαινομενου χαλλ

Country Status (15)

Country Link
US (1) US6734514B2 (enExample)
EP (1) EP1314211B1 (enExample)
JP (1) JP5049449B2 (enExample)
KR (1) KR100837912B1 (enExample)
AT (1) ATE327574T1 (enExample)
AU (2) AU2001287791B2 (enExample)
CA (1) CA2421077C (enExample)
CY (1) CY1105327T1 (enExample)
DE (1) DE60119937T2 (enExample)
DK (1) DK1314211T3 (enExample)
ES (1) ES2265440T3 (enExample)
FR (1) FR2813443B1 (enExample)
PT (1) PT1314211E (enExample)
WO (1) WO2002019442A1 (enExample)
ZA (1) ZA200301625B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879012B2 (en) * 2002-06-21 2005-04-12 The Regents Of The University Of California Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
WO2005112151A1 (en) * 2004-05-17 2005-11-24 Lg Chem, Ltd. Electrode, and method for preparing the same
CN1839497B (zh) 2004-05-17 2010-06-30 株式会社Lg化学 电极及其制备方法
EP1924341A1 (en) * 2005-08-05 2008-05-28 FUJIFILM Manufacturing Europe B.V. Porous membrane and recording medium comprising same
WO2007018424A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium comprising same
JP2009502583A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. 多孔質膜およびそれを含む記録媒体
DE602006006071D1 (de) * 2005-08-05 2009-05-14 Fujifilm Mfg Europe Bv Poröse membran und aufzeichnungsmedium sowie herstellungsverfahren dafür
JP2009503227A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. 多孔質膜及びそれを用いた記録媒体
JP2009503224A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. 多孔質膜とこれを含む記録媒体
US9588134B2 (en) * 2012-05-10 2017-03-07 Infineon Technologies Ag Increased dynamic range sensor
US9362485B2 (en) * 2013-03-14 2016-06-07 Robert Bosch Gmbh Vertical hall effect sensor with offset reduction using depletion regions
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
US11605778B2 (en) 2019-02-07 2023-03-14 Lake Shore Cryotronics, Inc. Hall effect sensor with low offset and high level of stability
CN120063335B (zh) * 2025-02-17 2025-10-03 安徽大学 一种基于室温平面霍尔效应的角度传感器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572091A (en) * 1978-11-24 1980-05-30 Victor Co Of Japan Ltd Hall element
GB2081934B (en) * 1980-08-08 1984-03-07 Ass Eng Ltd Automatic speed control systems
JP2884707B2 (ja) * 1990-05-21 1999-04-19 住友電気工業株式会社 ホール素子
JP3214505B2 (ja) * 1991-09-13 2001-10-02 株式会社デンソー 半導体装置の製造方法
US5536953A (en) * 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region

Also Published As

Publication number Publication date
PT1314211E (pt) 2006-10-31
KR20030045042A (ko) 2003-06-09
KR100837912B1 (ko) 2008-06-13
AU8779101A (en) 2002-03-13
US6734514B2 (en) 2004-05-11
DE60119937D1 (de) 2006-06-29
JP5049449B2 (ja) 2012-10-17
AU2001287791B2 (en) 2006-04-27
EP1314211B1 (fr) 2006-05-24
FR2813443A1 (fr) 2002-03-01
ZA200301625B (en) 2004-02-27
DK1314211T3 (da) 2006-09-25
JP2004508721A (ja) 2004-03-18
ES2265440T3 (es) 2007-02-16
DE60119937T2 (de) 2007-01-11
ATE327574T1 (de) 2006-06-15
FR2813443B1 (fr) 2003-01-03
WO2002019442A1 (fr) 2002-03-07
EP1314211A1 (fr) 2003-05-28
CA2421077A1 (fr) 2002-03-07
CA2421077C (fr) 2011-10-04
US20030164530A1 (en) 2003-09-04

Similar Documents

Publication Publication Date Title
CY1105327T1 (el) Αισθητηρας φαινομενου χαλλ
CA2297037A1 (en) Semiconductor devices and methods with tunnel contact hole sources
ATE453213T1 (de) Leuchtdiode mit siliziumcarbidsubstrat
EP1017113A4 (en) NITRIDE SEMICONDUCTOR DEVICE
EP0926744A3 (en) Light emitting device
ATE239974T1 (de) Mikroschaltkontakt
ES8400636A1 (es) Dispositivo fotovoltaico pindesilicio amorfo.
AR016940A1 (es) Aislacion electrica para un conductor, metodo para aislar un conductor y uso de una aislacion
TW200509359A (en) Electrostatic discharge protection circuit, semiconductor circuit and fabrication thereof
KR910019248A (ko) 반도체 가변용량소자
FR2922310B1 (fr) Transducteur a semi conducteurs,et son utilisation dans un capteur d'especes donneuses ou acceptrices d'electrons.
JP2004508721A5 (enExample)
ATE522932T1 (de) Leistungs-schottkydiode mit sicoi-substrat und diesbezügliches herstellungsverfahren
KR880011937A (ko) 과전압 보호용 집적회로
KR20120029284A (ko) 발광소자
KR970008640A (ko) 반도체 장치
KR920015650A (ko) 반도체 발광소자 및 그 제조방법
JPS6465870A (en) Semiconductor element of silicon carbide
TW200612575A (en) Semiconductor light emitting devices
SE8504204L (sv) En halvledaranordning med begravd resistans
RU2006100069A (ru) Высоковольтный полупроводниковый ограничитель напряжения (варианты)
GB1386099A (en) Junction device employing a glassy amorphous material as an active layer
TW374267B (en) Nitride semiconductor device
AU2002210818A1 (en) Optoelectronic device having a highly conductive carrier tunneling current aperture
KR910005472A (ko) 반도체 소자의 dc 제조 방법