ATE327574T1 - Halleffekt-sensor - Google Patents

Halleffekt-sensor

Info

Publication number
ATE327574T1
ATE327574T1 AT01967405T AT01967405T ATE327574T1 AT E327574 T1 ATE327574 T1 AT E327574T1 AT 01967405 T AT01967405 T AT 01967405T AT 01967405 T AT01967405 T AT 01967405T AT E327574 T1 ATE327574 T1 AT E327574T1
Authority
AT
Austria
Prior art keywords
hall effect
effect sensor
substrate
active layer
insulating
Prior art date
Application number
AT01967405T
Other languages
English (en)
Inventor
Jean-Louis Robert
Julien Pernot
Jean Camassel
Sylvie Contreras
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE327574T1 publication Critical patent/ATE327574T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Window Of Vehicle (AREA)
  • Measuring Magnetic Variables (AREA)
  • Push-Button Switches (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Electrophonic Musical Instruments (AREA)
AT01967405T 2000-08-30 2001-08-30 Halleffekt-sensor ATE327574T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0011087A FR2813443B1 (fr) 2000-08-30 2000-08-30 Capteur a effet hall

Publications (1)

Publication Number Publication Date
ATE327574T1 true ATE327574T1 (de) 2006-06-15

Family

ID=8853827

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01967405T ATE327574T1 (de) 2000-08-30 2001-08-30 Halleffekt-sensor

Country Status (15)

Country Link
US (1) US6734514B2 (de)
EP (1) EP1314211B1 (de)
JP (1) JP5049449B2 (de)
KR (1) KR100837912B1 (de)
AT (1) ATE327574T1 (de)
AU (2) AU8779101A (de)
CA (1) CA2421077C (de)
CY (1) CY1105327T1 (de)
DE (1) DE60119937T2 (de)
DK (1) DK1314211T3 (de)
ES (1) ES2265440T3 (de)
FR (1) FR2813443B1 (de)
PT (1) PT1314211E (de)
WO (1) WO2002019442A1 (de)
ZA (1) ZA200301625B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879012B2 (en) * 2002-06-21 2005-04-12 The Regents Of The University Of California Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
JP4980052B2 (ja) * 2004-05-17 2012-07-18 エルジー・ケム・リミテッド 電極及びその製造方法
KR100821630B1 (ko) 2004-05-17 2008-04-16 주식회사 엘지화학 전극 및 이의 제조방법
JP2009502583A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜およびそれを含む記録媒体
ATE427156T1 (de) * 2005-08-05 2009-04-15 Fujifilm Mfg Europe Bv Poríse membran und aufzeichnungsmedium sowie herstellungsverfahren dafur
EP1924341A1 (de) * 2005-08-05 2008-05-28 FUJIFILM Manufacturing Europe B.V. Poröse membran und aufzeichnungsmedium damit
EP1924342A1 (de) * 2005-08-05 2008-05-28 FUJIFILM Manufacturing Europe B.V. Poröse membran und aufzeichnungsmedium damit
JP2009503227A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜及びそれを用いた記録媒体
JP2009503224A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜とこれを含む記録媒体
US9588134B2 (en) * 2012-05-10 2017-03-07 Infineon Technologies Ag Increased dynamic range sensor
US9362485B2 (en) 2013-03-14 2016-06-07 Robert Bosch Gmbh Vertical hall effect sensor with offset reduction using depletion regions
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
US11605778B2 (en) 2019-02-07 2023-03-14 Lake Shore Cryotronics, Inc. Hall effect sensor with low offset and high level of stability
GB2644272A (en) * 2024-09-17 2026-04-01 Univ Warwick Magnetic field sensor
CN120063335B (zh) * 2025-02-17 2025-10-03 安徽大学 一种基于室温平面霍尔效应的角度传感器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572091A (en) * 1978-11-24 1980-05-30 Victor Co Of Japan Ltd Hall element
GB2081934B (en) * 1980-08-08 1984-03-07 Ass Eng Ltd Automatic speed control systems
JP2884707B2 (ja) * 1990-05-21 1999-04-19 住友電気工業株式会社 ホール素子
JP3214505B2 (ja) * 1991-09-13 2001-10-02 株式会社デンソー 半導体装置の製造方法
US5536953A (en) * 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region

Also Published As

Publication number Publication date
FR2813443A1 (fr) 2002-03-01
FR2813443B1 (fr) 2003-01-03
CA2421077C (fr) 2011-10-04
WO2002019442A1 (fr) 2002-03-07
CA2421077A1 (fr) 2002-03-07
AU8779101A (en) 2002-03-13
KR20030045042A (ko) 2003-06-09
DK1314211T3 (da) 2006-09-25
DE60119937D1 (de) 2006-06-29
JP2004508721A (ja) 2004-03-18
AU2001287791B2 (en) 2006-04-27
ZA200301625B (en) 2004-02-27
CY1105327T1 (el) 2010-03-03
JP5049449B2 (ja) 2012-10-17
ES2265440T3 (es) 2007-02-16
DE60119937T2 (de) 2007-01-11
EP1314211A1 (de) 2003-05-28
US6734514B2 (en) 2004-05-11
PT1314211E (pt) 2006-10-31
EP1314211B1 (de) 2006-05-24
KR100837912B1 (ko) 2008-06-13
US20030164530A1 (en) 2003-09-04

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