ZA200301625B - Hall-effect sensor. - Google Patents

Hall-effect sensor. Download PDF

Info

Publication number
ZA200301625B
ZA200301625B ZA200301625A ZA200301625A ZA200301625B ZA 200301625 B ZA200301625 B ZA 200301625B ZA 200301625 A ZA200301625 A ZA 200301625A ZA 200301625 A ZA200301625 A ZA 200301625A ZA 200301625 B ZA200301625 B ZA 200301625B
Authority
ZA
South Africa
Prior art keywords
active layer
substrate
hall effect
effect sensor
metrological
Prior art date
Application number
ZA200301625A
Other languages
English (en)
Inventor
Jean-Louis Robert
Julien Pernot
Jean Camassel
Sylvie Contreras
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Publication of ZA200301625B publication Critical patent/ZA200301625B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Window Of Vehicle (AREA)
  • Measuring Magnetic Variables (AREA)
  • Push-Button Switches (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Electrophonic Musical Instruments (AREA)
ZA200301625A 2000-08-30 2003-02-27 Hall-effect sensor. ZA200301625B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0011087A FR2813443B1 (fr) 2000-08-30 2000-08-30 Capteur a effet hall

Publications (1)

Publication Number Publication Date
ZA200301625B true ZA200301625B (en) 2004-02-27

Family

ID=8853827

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200301625A ZA200301625B (en) 2000-08-30 2003-02-27 Hall-effect sensor.

Country Status (15)

Country Link
US (1) US6734514B2 (enExample)
EP (1) EP1314211B1 (enExample)
JP (1) JP5049449B2 (enExample)
KR (1) KR100837912B1 (enExample)
AT (1) ATE327574T1 (enExample)
AU (2) AU8779101A (enExample)
CA (1) CA2421077C (enExample)
CY (1) CY1105327T1 (enExample)
DE (1) DE60119937T2 (enExample)
DK (1) DK1314211T3 (enExample)
ES (1) ES2265440T3 (enExample)
FR (1) FR2813443B1 (enExample)
PT (1) PT1314211E (enExample)
WO (1) WO2002019442A1 (enExample)
ZA (1) ZA200301625B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879012B2 (en) * 2002-06-21 2005-04-12 The Regents Of The University Of California Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
US7857868B2 (en) 2004-05-17 2010-12-28 Lg Chem, Ltd. Electrode and method for preparing the same using substrate induced coagulation (SIC)
WO2005112151A1 (en) * 2004-05-17 2005-11-24 Lg Chem, Ltd. Electrode, and method for preparing the same
WO2007018424A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium comprising same
WO2007018423A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium, as well as process for preparing same
WO2007018426A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium comprising same
JP2009503224A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜とこれを含む記録媒体
JP2009503225A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜及びこれを含有する記録媒体
WO2007018428A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium comprising same
US9588134B2 (en) * 2012-05-10 2017-03-07 Infineon Technologies Ag Increased dynamic range sensor
US9362485B2 (en) 2013-03-14 2016-06-07 Robert Bosch Gmbh Vertical hall effect sensor with offset reduction using depletion regions
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
US11605778B2 (en) 2019-02-07 2023-03-14 Lake Shore Cryotronics, Inc. Hall effect sensor with low offset and high level of stability
CN120063335B (zh) * 2025-02-17 2025-10-03 安徽大学 一种基于室温平面霍尔效应的角度传感器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572091A (en) * 1978-11-24 1980-05-30 Victor Co Of Japan Ltd Hall element
GB2081934B (en) * 1980-08-08 1984-03-07 Ass Eng Ltd Automatic speed control systems
JP2884707B2 (ja) * 1990-05-21 1999-04-19 住友電気工業株式会社 ホール素子
JP3214505B2 (ja) * 1991-09-13 2001-10-02 株式会社デンソー 半導体装置の製造方法
US5536953A (en) * 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region

Also Published As

Publication number Publication date
DE60119937T2 (de) 2007-01-11
WO2002019442A1 (fr) 2002-03-07
KR20030045042A (ko) 2003-06-09
JP5049449B2 (ja) 2012-10-17
US20030164530A1 (en) 2003-09-04
AU2001287791B2 (en) 2006-04-27
ES2265440T3 (es) 2007-02-16
EP1314211A1 (fr) 2003-05-28
CA2421077C (fr) 2011-10-04
DE60119937D1 (de) 2006-06-29
CA2421077A1 (fr) 2002-03-07
PT1314211E (pt) 2006-10-31
FR2813443B1 (fr) 2003-01-03
KR100837912B1 (ko) 2008-06-13
ATE327574T1 (de) 2006-06-15
JP2004508721A (ja) 2004-03-18
EP1314211B1 (fr) 2006-05-24
CY1105327T1 (el) 2010-03-03
FR2813443A1 (fr) 2002-03-01
DK1314211T3 (da) 2006-09-25
AU8779101A (en) 2002-03-13
US6734514B2 (en) 2004-05-11

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