PT1314211E - Sensor por efeito de hall - Google Patents

Sensor por efeito de hall

Info

Publication number
PT1314211E
PT1314211E PT01967405T PT01967405T PT1314211E PT 1314211 E PT1314211 E PT 1314211E PT 01967405 T PT01967405 T PT 01967405T PT 01967405 T PT01967405 T PT 01967405T PT 1314211 E PT1314211 E PT 1314211E
Authority
PT
Portugal
Prior art keywords
hall effect
substrate
active layer
sensor
insulating
Prior art date
Application number
PT01967405T
Other languages
English (en)
Portuguese (pt)
Inventor
Robert Jean-Louis
Pernot Julien
Camassel Jean
Contreras Sylvie
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Publication of PT1314211E publication Critical patent/PT1314211E/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Fluid Pressure (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Window Of Vehicle (AREA)
  • Measuring Magnetic Variables (AREA)
  • Push-Button Switches (AREA)
  • Switches That Are Operated By Magnetic Or Electric Fields (AREA)
  • Electrophonic Musical Instruments (AREA)
PT01967405T 2000-08-30 2001-08-30 Sensor por efeito de hall PT1314211E (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0011087A FR2813443B1 (fr) 2000-08-30 2000-08-30 Capteur a effet hall

Publications (1)

Publication Number Publication Date
PT1314211E true PT1314211E (pt) 2006-10-31

Family

ID=8853827

Family Applications (1)

Application Number Title Priority Date Filing Date
PT01967405T PT1314211E (pt) 2000-08-30 2001-08-30 Sensor por efeito de hall

Country Status (15)

Country Link
US (1) US6734514B2 (enExample)
EP (1) EP1314211B1 (enExample)
JP (1) JP5049449B2 (enExample)
KR (1) KR100837912B1 (enExample)
AT (1) ATE327574T1 (enExample)
AU (2) AU8779101A (enExample)
CA (1) CA2421077C (enExample)
CY (1) CY1105327T1 (enExample)
DE (1) DE60119937T2 (enExample)
DK (1) DK1314211T3 (enExample)
ES (1) ES2265440T3 (enExample)
FR (1) FR2813443B1 (enExample)
PT (1) PT1314211E (enExample)
WO (1) WO2002019442A1 (enExample)
ZA (1) ZA200301625B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879012B2 (en) * 2002-06-21 2005-04-12 The Regents Of The University Of California Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
US7857868B2 (en) 2004-05-17 2010-12-28 Lg Chem, Ltd. Electrode and method for preparing the same using substrate induced coagulation (SIC)
WO2005112151A1 (en) * 2004-05-17 2005-11-24 Lg Chem, Ltd. Electrode, and method for preparing the same
WO2007018424A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium comprising same
WO2007018423A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium, as well as process for preparing same
WO2007018426A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium comprising same
JP2009503224A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜とこれを含む記録媒体
JP2009503225A (ja) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 多孔質膜及びこれを含有する記録媒体
WO2007018428A1 (en) * 2005-08-05 2007-02-15 Fujifilm Manufacturing Europe B.V. Porous membrane and recording medium comprising same
US9588134B2 (en) * 2012-05-10 2017-03-07 Infineon Technologies Ag Increased dynamic range sensor
US9362485B2 (en) 2013-03-14 2016-06-07 Robert Bosch Gmbh Vertical hall effect sensor with offset reduction using depletion regions
KR102116147B1 (ko) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 매립형 마그네틱 센서
US11605778B2 (en) 2019-02-07 2023-03-14 Lake Shore Cryotronics, Inc. Hall effect sensor with low offset and high level of stability
CN120063335B (zh) * 2025-02-17 2025-10-03 安徽大学 一种基于室温平面霍尔效应的角度传感器件及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572091A (en) * 1978-11-24 1980-05-30 Victor Co Of Japan Ltd Hall element
GB2081934B (en) * 1980-08-08 1984-03-07 Ass Eng Ltd Automatic speed control systems
JP2884707B2 (ja) * 1990-05-21 1999-04-19 住友電気工業株式会社 ホール素子
JP3214505B2 (ja) * 1991-09-13 2001-10-02 株式会社デンソー 半導体装置の製造方法
US5536953A (en) * 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region

Also Published As

Publication number Publication date
DE60119937T2 (de) 2007-01-11
WO2002019442A1 (fr) 2002-03-07
KR20030045042A (ko) 2003-06-09
JP5049449B2 (ja) 2012-10-17
US20030164530A1 (en) 2003-09-04
AU2001287791B2 (en) 2006-04-27
ES2265440T3 (es) 2007-02-16
EP1314211A1 (fr) 2003-05-28
CA2421077C (fr) 2011-10-04
ZA200301625B (en) 2004-02-27
DE60119937D1 (de) 2006-06-29
CA2421077A1 (fr) 2002-03-07
FR2813443B1 (fr) 2003-01-03
KR100837912B1 (ko) 2008-06-13
ATE327574T1 (de) 2006-06-15
JP2004508721A (ja) 2004-03-18
EP1314211B1 (fr) 2006-05-24
CY1105327T1 (el) 2010-03-03
FR2813443A1 (fr) 2002-03-01
DK1314211T3 (da) 2006-09-25
AU8779101A (en) 2002-03-13
US6734514B2 (en) 2004-05-11

Similar Documents

Publication Publication Date Title
PT1314211E (pt) Sensor por efeito de hall
ATE337617T1 (de) Integrierte hallanordnung
EP1367659A3 (en) Organic field effect transistor
TW200419862A (en) Semiconductor element and its manufacture
ATE469356T1 (de) Stromsensor
TW200620657A (en) Recessed semiconductor device
SG136795A1 (en) Semiconductor device and manufacturing method thereof
DE602005015856D1 (de) Nanodrahtvorrichtung mit vertikalen (111) seitenwänden und herstellungsverfahren
WO2004066477A3 (en) Semiconducting island as active layer in fet
DE60036301D1 (de) Gassensor und sein herstellungsverfahren
EP1976011A3 (en) High breakdown voltage semiconductor circuit device and method of manufacturing the same
ES8400636A1 (es) Dispositivo fotovoltaico pindesilicio amorfo.
WO2003096423A1 (en) Semiconductor storage device and production method therefor
TW200725756A (en) Method for forming a semiconductor structure and structure thereof
TW200509359A (en) Electrostatic discharge protection circuit, semiconductor circuit and fabrication thereof
TW200509390A (en) Varying carrier mobility in semiconductor devices to achieve overall design goals
WO2003078301A3 (en) Micro-electromechanical systems
WO2002035611A3 (en) Unipolar spin diode and transistor and the applications of the same
GB2379802A (en) A method for forming a product sensor and a product sensor
WO2009071774A3 (fr) Transducteur a semi conducteurs, et son utilisation dans un capteur d'especes donneuses ou acceptrices d'electrons
WO2001059850A3 (en) Structures and methods for improved capacitor cells
GB2363642A (en) Spin valve sensor with specular electron scattering in free layer
TW200743209A (en) Semiconductor device, method of fabricating the same, and patterning mask utilized by the method
JPS533075A (en) Production of mos structure field effect semiconductor device
JP2000243974A5 (enExample)