TW200612575A - Semiconductor light emitting devices - Google Patents
Semiconductor light emitting devicesInfo
- Publication number
- TW200612575A TW200612575A TW093130860A TW93130860A TW200612575A TW 200612575 A TW200612575 A TW 200612575A TW 093130860 A TW093130860 A TW 093130860A TW 93130860 A TW93130860 A TW 93130860A TW 200612575 A TW200612575 A TW 200612575A
- Authority
- TW
- Taiwan
- Prior art keywords
- type layer
- type
- light emitting
- semiconductor light
- emitting devices
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93130860A TWI356504B (en) | 2004-10-12 | 2004-10-12 | Semiconductor light emitting devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW93130860A TWI356504B (en) | 2004-10-12 | 2004-10-12 | Semiconductor light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200612575A true TW200612575A (en) | 2006-04-16 |
TWI356504B TWI356504B (en) | 2012-01-11 |
Family
ID=46728109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW93130860A TWI356504B (en) | 2004-10-12 | 2004-10-12 | Semiconductor light emitting devices |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI356504B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI447940B (en) * | 2008-07-15 | 2014-08-01 | Lextar Electronics Corp | Light emitting diode chip and fabricating method thereof |
TWI583086B (en) * | 2016-07-18 | 2017-05-11 | 華星光通科技股份有限公司 | Heat dissipation structure of optical transmitter, and optical transmitter comprising thereof |
TWI695778B (en) * | 2014-08-26 | 2020-06-11 | 日商三菱綜合材料股份有限公司 | Bonded body, power module substrate with heat sink, heat sink, method of producing bonded body, method of producing power module substrate with heat sink and method of producing heat sink |
-
2004
- 2004-10-12 TW TW93130860A patent/TWI356504B/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI447940B (en) * | 2008-07-15 | 2014-08-01 | Lextar Electronics Corp | Light emitting diode chip and fabricating method thereof |
TWI695778B (en) * | 2014-08-26 | 2020-06-11 | 日商三菱綜合材料股份有限公司 | Bonded body, power module substrate with heat sink, heat sink, method of producing bonded body, method of producing power module substrate with heat sink and method of producing heat sink |
TWI583086B (en) * | 2016-07-18 | 2017-05-11 | 華星光通科技股份有限公司 | Heat dissipation structure of optical transmitter, and optical transmitter comprising thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI356504B (en) | 2012-01-11 |
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