AU2001287791B2 - Hall-effect sensor - Google Patents
Hall-effect sensor Download PDFInfo
- Publication number
- AU2001287791B2 AU2001287791B2 AU2001287791A AU2001287791A AU2001287791B2 AU 2001287791 B2 AU2001287791 B2 AU 2001287791B2 AU 2001287791 A AU2001287791 A AU 2001287791A AU 2001287791 A AU2001287791 A AU 2001287791A AU 2001287791 B2 AU2001287791 B2 AU 2001287791B2
- Authority
- AU
- Australia
- Prior art keywords
- active layer
- effect sensor
- hall effect
- layer
- sensor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005355 Hall effect Effects 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000010070 molecular adhesion Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000008542 thermal sensitivity Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N52/00—Hall-effect devices
- H10N52/101—Semiconductor Hall-effect devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Fluid Pressure (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Window Of Vehicle (AREA)
- Measuring Magnetic Variables (AREA)
- Switches That Are Operated By Magnetic Or Electric Fields (AREA)
- Push-Button Switches (AREA)
- Electrophonic Musical Instruments (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0011087A FR2813443B1 (fr) | 2000-08-30 | 2000-08-30 | Capteur a effet hall |
| FR00/11087 | 2000-08-30 | ||
| PCT/FR2001/002703 WO2002019442A1 (fr) | 2000-08-30 | 2001-08-30 | Capteur a effet hall |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AU2001287791A1 AU2001287791A1 (en) | 2002-06-06 |
| AU2001287791B2 true AU2001287791B2 (en) | 2006-04-27 |
Family
ID=8853827
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2001287791A Ceased AU2001287791B2 (en) | 2000-08-30 | 2001-08-30 | Hall-effect sensor |
| AU8779101A Pending AU8779101A (en) | 2000-08-30 | 2001-08-30 | Hall-effect sensor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU8779101A Pending AU8779101A (en) | 2000-08-30 | 2001-08-30 | Hall-effect sensor |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US6734514B2 (enExample) |
| EP (1) | EP1314211B1 (enExample) |
| JP (1) | JP5049449B2 (enExample) |
| KR (1) | KR100837912B1 (enExample) |
| AT (1) | ATE327574T1 (enExample) |
| AU (2) | AU2001287791B2 (enExample) |
| CA (1) | CA2421077C (enExample) |
| CY (1) | CY1105327T1 (enExample) |
| DE (1) | DE60119937T2 (enExample) |
| DK (1) | DK1314211T3 (enExample) |
| ES (1) | ES2265440T3 (enExample) |
| FR (1) | FR2813443B1 (enExample) |
| PT (1) | PT1314211E (enExample) |
| WO (1) | WO2002019442A1 (enExample) |
| ZA (1) | ZA200301625B (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6879012B2 (en) * | 2002-06-21 | 2005-04-12 | The Regents Of The University Of California | Giant planar hall effect in epitaxial ferromagnetic semiconductor devices |
| WO2005112151A1 (en) * | 2004-05-17 | 2005-11-24 | Lg Chem, Ltd. | Electrode, and method for preparing the same |
| CN1839497B (zh) | 2004-05-17 | 2010-06-30 | 株式会社Lg化学 | 电极及其制备方法 |
| EP1924341A1 (en) * | 2005-08-05 | 2008-05-28 | FUJIFILM Manufacturing Europe B.V. | Porous membrane and recording medium comprising same |
| WO2007018424A1 (en) * | 2005-08-05 | 2007-02-15 | Fujifilm Manufacturing Europe B.V. | Porous membrane and recording medium comprising same |
| JP2009502583A (ja) * | 2005-08-05 | 2009-01-29 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | 多孔質膜およびそれを含む記録媒体 |
| DE602006006071D1 (de) * | 2005-08-05 | 2009-05-14 | Fujifilm Mfg Europe Bv | Poröse membran und aufzeichnungsmedium sowie herstellungsverfahren dafür |
| JP2009503227A (ja) * | 2005-08-05 | 2009-01-29 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | 多孔質膜及びそれを用いた記録媒体 |
| JP2009503224A (ja) * | 2005-08-05 | 2009-01-29 | フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． | 多孔質膜とこれを含む記録媒体 |
| US9588134B2 (en) * | 2012-05-10 | 2017-03-07 | Infineon Technologies Ag | Increased dynamic range sensor |
| US9362485B2 (en) * | 2013-03-14 | 2016-06-07 | Robert Bosch Gmbh | Vertical hall effect sensor with offset reduction using depletion regions |
| KR102116147B1 (ko) * | 2014-03-06 | 2020-05-28 | 매그나칩 반도체 유한회사 | 매립형 마그네틱 센서 |
| US11605778B2 (en) | 2019-02-07 | 2023-03-14 | Lake Shore Cryotronics, Inc. | Hall effect sensor with low offset and high level of stability |
| CN120063335B (zh) * | 2025-02-17 | 2025-10-03 | 安徽大学 | 一种基于室温平面霍尔效应的角度传感器件及其制备方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4315273A (en) * | 1978-11-24 | 1982-02-09 | Victor Company Of Japan, Limited | Compound semiconductor Hall effect element |
| EP0458466A2 (en) * | 1990-05-21 | 1991-11-27 | Sumitomo Electric Industries, Limited | Hall device |
| US5536953A (en) * | 1994-03-08 | 1996-07-16 | Kobe Steel Usa | Wide bandgap semiconductor device including lightly doped active region |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2081934B (en) * | 1980-08-08 | 1984-03-07 | Ass Eng Ltd | Automatic speed control systems |
| JP3214505B2 (ja) * | 1991-09-13 | 2001-10-02 | 株式会社デンソー | 半導体装置の製造方法 |
-
2000
- 2000-08-30 FR FR0011087A patent/FR2813443B1/fr not_active Expired - Lifetime
-
2001
- 2001-08-30 AU AU2001287791A patent/AU2001287791B2/en not_active Ceased
- 2001-08-30 PT PT01967405T patent/PT1314211E/pt unknown
- 2001-08-30 DK DK01967405T patent/DK1314211T3/da active
- 2001-08-30 AU AU8779101A patent/AU8779101A/xx active Pending
- 2001-08-30 DE DE60119937T patent/DE60119937T2/de not_active Expired - Lifetime
- 2001-08-30 AT AT01967405T patent/ATE327574T1/de active
- 2001-08-30 JP JP2002524238A patent/JP5049449B2/ja not_active Expired - Fee Related
- 2001-08-30 WO PCT/FR2001/002703 patent/WO2002019442A1/fr not_active Ceased
- 2001-08-30 KR KR1020037002703A patent/KR100837912B1/ko not_active Expired - Fee Related
- 2001-08-30 EP EP01967405A patent/EP1314211B1/fr not_active Expired - Lifetime
- 2001-08-30 ES ES01967405T patent/ES2265440T3/es not_active Expired - Lifetime
- 2001-08-30 CA CA2421077A patent/CA2421077C/fr not_active Expired - Fee Related
-
2003
- 2003-02-26 US US10/374,656 patent/US6734514B2/en not_active Expired - Lifetime
- 2003-02-27 ZA ZA200301625A patent/ZA200301625B/en unknown
-
2006
- 2006-08-23 CY CY20061101168T patent/CY1105327T1/el unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4315273A (en) * | 1978-11-24 | 1982-02-09 | Victor Company Of Japan, Limited | Compound semiconductor Hall effect element |
| EP0458466A2 (en) * | 1990-05-21 | 1991-11-27 | Sumitomo Electric Industries, Limited | Hall device |
| US5536953A (en) * | 1994-03-08 | 1996-07-16 | Kobe Steel Usa | Wide bandgap semiconductor device including lightly doped active region |
Also Published As
| Publication number | Publication date |
|---|---|
| PT1314211E (pt) | 2006-10-31 |
| CY1105327T1 (el) | 2010-03-03 |
| KR20030045042A (ko) | 2003-06-09 |
| KR100837912B1 (ko) | 2008-06-13 |
| AU8779101A (en) | 2002-03-13 |
| US6734514B2 (en) | 2004-05-11 |
| DE60119937D1 (de) | 2006-06-29 |
| JP5049449B2 (ja) | 2012-10-17 |
| EP1314211B1 (fr) | 2006-05-24 |
| FR2813443A1 (fr) | 2002-03-01 |
| ZA200301625B (en) | 2004-02-27 |
| DK1314211T3 (da) | 2006-09-25 |
| JP2004508721A (ja) | 2004-03-18 |
| ES2265440T3 (es) | 2007-02-16 |
| DE60119937T2 (de) | 2007-01-11 |
| ATE327574T1 (de) | 2006-06-15 |
| FR2813443B1 (fr) | 2003-01-03 |
| WO2002019442A1 (fr) | 2002-03-07 |
| EP1314211A1 (fr) | 2003-05-28 |
| CA2421077A1 (fr) | 2002-03-07 |
| CA2421077C (fr) | 2011-10-04 |
| US20030164530A1 (en) | 2003-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FGA | Letters patent sealed or granted (standard patent) | ||
| MK14 | Patent ceased section 143(a) (annual fees not paid) or expired |