AU2001287791A1 - Hall-effect sensor - Google Patents

Hall-effect sensor

Info

Publication number
AU2001287791A1
AU2001287791A1 AU2001287791A AU2001287791A AU2001287791A1 AU 2001287791 A1 AU2001287791 A1 AU 2001287791A1 AU 2001287791 A AU2001287791 A AU 2001287791A AU 2001287791 A AU2001287791 A AU 2001287791A AU 2001287791 A1 AU2001287791 A1 AU 2001287791A1
Authority
AU
Australia
Prior art keywords
hall
effect sensor
sensor
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU2001287791A
Other versions
AU2001287791B2 (en
Inventor
Jean Camassel
Sylvie Contreras
Julien Pernot
Jean-Louis Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR0011087A external-priority patent/FR2813443B1/en
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2001287791A1 publication Critical patent/AU2001287791A1/en
Application granted granted Critical
Publication of AU2001287791B2 publication Critical patent/AU2001287791B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

AU2001287791A 2000-08-30 2001-08-30 Hall-effect sensor Ceased AU2001287791B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR00/11087 2000-08-30
FR0011087A FR2813443B1 (en) 2000-08-30 2000-08-30 HALL EFFECT SENSOR
PCT/FR2001/002703 WO2002019442A1 (en) 2000-08-30 2001-08-30 Hall-effect sensor

Publications (2)

Publication Number Publication Date
AU2001287791A1 true AU2001287791A1 (en) 2002-06-06
AU2001287791B2 AU2001287791B2 (en) 2006-04-27

Family

ID=8853827

Family Applications (2)

Application Number Title Priority Date Filing Date
AU8779101A Pending AU8779101A (en) 2000-08-30 2001-08-30 Hall-effect sensor
AU2001287791A Ceased AU2001287791B2 (en) 2000-08-30 2001-08-30 Hall-effect sensor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AU8779101A Pending AU8779101A (en) 2000-08-30 2001-08-30 Hall-effect sensor

Country Status (15)

Country Link
US (1) US6734514B2 (en)
EP (1) EP1314211B1 (en)
JP (1) JP5049449B2 (en)
KR (1) KR100837912B1 (en)
AT (1) ATE327574T1 (en)
AU (2) AU8779101A (en)
CA (1) CA2421077C (en)
CY (1) CY1105327T1 (en)
DE (1) DE60119937T2 (en)
DK (1) DK1314211T3 (en)
ES (1) ES2265440T3 (en)
FR (1) FR2813443B1 (en)
PT (1) PT1314211E (en)
WO (1) WO2002019442A1 (en)
ZA (1) ZA200301625B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6879012B2 (en) * 2002-06-21 2005-04-12 The Regents Of The University Of California Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
JP4980052B2 (en) * 2004-05-17 2012-07-18 エルジー・ケム・リミテッド Electrode and manufacturing method thereof
US7857868B2 (en) 2004-05-17 2010-12-28 Lg Chem, Ltd. Electrode and method for preparing the same using substrate induced coagulation (SIC)
DE602006006071D1 (en) * 2005-08-05 2009-05-14 Fujifilm Mfg Europe Bv POROUS MEMBRANE AND RECORDING MEDIUM AND MANUFACTURING METHOD THEREFOR
JP2009503225A (en) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. Porous film and recording medium containing the same
JP2009502583A (en) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. Porous film and recording medium including the same
JP2009503224A (en) * 2005-08-05 2009-01-29 フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. Porous film and recording medium including the same
EP1924342A1 (en) * 2005-08-05 2008-05-28 FUJIFILM Manufacturing Europe B.V. Porous membrane and recording medium comprising same
EP1924344A1 (en) * 2005-08-05 2008-05-28 FUJIFILM Manufacturing Europe B.V. Porous membrane and recording medium comprising same
US9588134B2 (en) * 2012-05-10 2017-03-07 Infineon Technologies Ag Increased dynamic range sensor
US9362485B2 (en) * 2013-03-14 2016-06-07 Robert Bosch Gmbh Vertical hall effect sensor with offset reduction using depletion regions
KR102116147B1 (en) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 Buried Magnetic Sensor
US11605778B2 (en) 2019-02-07 2023-03-14 Lake Shore Cryotronics, Inc. Hall effect sensor with low offset and high level of stability

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572091A (en) * 1978-11-24 1980-05-30 Victor Co Of Japan Ltd Hall element
GB2081934B (en) * 1980-08-08 1984-03-07 Ass Eng Ltd Automatic speed control systems
JP2884707B2 (en) * 1990-05-21 1999-04-19 住友電気工業株式会社 Hall element
JP3214505B2 (en) * 1991-09-13 2001-10-02 株式会社デンソー Method for manufacturing semiconductor device
US5536953A (en) * 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region

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