CN2837831Y - Ultra-high vacuum in-situ growth, characterization and test system - Google Patents
Ultra-high vacuum in-situ growth, characterization and test system Download PDFInfo
- Publication number
- CN2837831Y CN2837831Y CNU2005201326512U CN200520132651U CN2837831Y CN 2837831 Y CN2837831 Y CN 2837831Y CN U2005201326512 U CNU2005201326512 U CN U2005201326512U CN 200520132651 U CN200520132651 U CN 200520132651U CN 2837831 Y CN2837831 Y CN 2837831Y
- Authority
- CN
- China
- Prior art keywords
- sample
- chamber
- vacuum
- room
- stm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The utility model discloses an ultra-high vacuum in-situ growth, characterization and test system which comprises an MBE growth room, a sample analysis room, an STM room and a buffering bench, wherein the buffering bench comprises three air legs, three steel cages and a triangular bracket; the steel cages are vertically arranged on three angles of the triangular bracket, form semi-encompassing shapes, and are respectively sheathed on the three air legs, and supporting boards are respectively arranged in the positions near three angles of the triangular bracket. The MBE growth room, the sample analysis room and the STM room are arranged on the supporting boards, and the distance between the supporting boards and the ground is smaller than the heights of the air legs; the MBE growth room and the sample analysis room, and the sample analysis room and the STM room are respectively connected by flashboard valves and metallic corrugated pipes in a vacuum seal mode. The utility model has the functions of cultivating, analyzing, characterizing, testing, etc. a sample, and meanwhile, the utility model is served as an individual, is independent without interference, and can have specific functions.
Description
Technical field
The utility model relates to a kind of multi-functional ultra-high vacuum system that sample grown, analysis, sign and original position electronic transport are measured that collects.It is the association system of scanning tunnel microscope (STM), molecular beam epitaxy (MBE) and the test of extreme condition electronic transport.
Background technology
One, experimentally as long as the molecule number in certain mikey volume much smaller than airborne molecular number, just can be called as vacuum.Molecule in the unit volume is few more, and vacuum tightness is just high more.Usually with the unit (Torr be actually a pressure unit) of Torr as vacuum tightness.An atmospheric pressure is 760Torr, and the ultrahigh vacuum vacuum tightness of saying usually is less than 10
-8Torr.Scientific development is to today, and increasing experiment needs ultra-high vacuum environment to avoid pollution and the oxidation of laboratory sample in atmosphere.Utilize vacuum pump system that the stainless steel cavity of metallic seal is bled, making inside cavity become ultrahigh vacuum dress attitude is a kind of means that obtain vacuum commonly used at present.Usually vacuum pump system can be divided into forepump (mechanical pump or dried pump), main pump (molecular pump) and three kinds of pumps of holding pump (ionic pump and titanium sublimation pump).Use forepump when vacuumizing earlier, generally can obtain 10
-3The vacuum of Torr; Start molecular pump then, can be extracted into 10 usually
-9-10
-10Torr; Further start ionic pump, vacuum can be extracted into 10
-10-10
-11Torr.Ionic pump starts the back not vibration and the sound, can the experiment that will do not exerted an influence.So the requirement of experiment molecular pump and the mechanical pumps that much carry out are closed, keep ultrahigh vacuum in the vacuum chamber by ionic pump, so ionic pump is a kind of holding pump in ultrahigh vacuum.If vacuum tightness is undesirable, can open titanium sublimation pump.Titanium sublimation pump is very high to the pumping speed of hydrogen.
Two, molecular beam epitaxy (MBE) growth is semiconductor and the metallic film growing technology that eighties of last century grows up the seventies.Its principle is: sample is placed in the ultrahigh vacuum cavity, and the material that will grow is packed in the crucible (crucible) of an end opening, and crucible places MBE source stove (K-cell), and the source stove is installed in the surface that makes the crucible opening aim at sample on the ultrahigh vacuum cavity.But K-cell is a stove of accurate temperature controlling heating.After temperature rises to certain value, open the baffle plate of crucible opening part, it is spouting that growth material will aim at sample with the form of atom or atomic group.At sample surfaces, can form high-purity island or film after material atom a series of dynamics of process and the thermodynamic process.Because the growth precision height (the film thickness atom level of growth is controlled) of MBE, controllability good (change of K-cell temperature has a significant impact growth rate), film quality height (can obtain good monocrystalline by the control growth parameter(s)) have been widely used in scientific circles and industry member in recent years.
Three, high-energy electron diffraction (HEED) technology (RHEED) is made up of RHEED rifle and the RHEED screen that faces rifle usually.RHEED rifle emission high-power electron beam (tens KeV) glancing incidence sample surfaces can observe diffraction fringe on the RHEED screen.What the spacing of diffraction fringe reflected is the crystalline network of sample surfaces.RHEED carries out real-time monitored through being usually used in the MBE system to growth for Thin Film.Can determine the thickness of MBE growing film by the Strength Changes of analyzing RHEED diffraction fringe.Precision can arrive monoatomic layer.
Four, the principle of work of low energy diffraction and Auger electron spectrometer association system (LEED/AES): the low-energy electron beam of about 100eV of electron gun emission (concrete energy value depends on the circumstances) impinges perpendicularly on the sample surfaces, and the electronics of reflected back can be imaged onto on the video screen.The analysis of fluorescence screen is gone up the spacing of electronics diffraction spot and periodically just can be known the crystalline network of sample surfaces.Strengthen electron energy to the KeV magnitude, when the bombardment sample, can produce Auger electron, the energy spectrum of Auger electron is analyzed and computing, can obtain the shared component of the various elements of sample surfaces.
Five, argon-ion gun (Ion Gun) is the instrument that cleans sample surfaces by ar-ion beam bombardment sample.Also can bombard the peel sample surface after strengthening the argon ion energy, sample interior is come out.
Six, scanning tunnel microscope (STM) technology is that eighties of last century grows up the eighties, the probe technique of utilizing the quantum tunneling principle of electronics to come scanning imagery, and for semiconductor or metal sample, the precision of pattern picture can arrive atom level.Current, STM has become indispensable laboratory facilities in Surface Science and the nano science research.
Seven, the test of the electronic transport under the said here extreme condition is meant that the electronic transport under high-intensity magnetic field, utmost point low temperature, ultrahigh vacuum is measured.Usually magnetic field is produced by the coil of energising, if produce high-intensity magnetic field, just need pass to big electric current.Yet heat that produces behind the logical big electric current and self inductance effect etc. are the extreme value of the limiting coil electric current that can pass through all.Like this, the magnetic field of generation just can not be very strong.Therefore, make coil with superconductor usually, when coil is in superconducting state, can add very big supercurrent and produce high-intensity magnetic field.The conventional means that utmost point low temperature obtains in the laboratory is a liquid helium at present.Because the liquid state of helium 4 is 4.2K,, can obtain to be lower than the temperature of 2K if adopt vacuum pump that it is reduced pressure.Can obtain lower temperature if change 3 of helium into.Superconducting coil need be freezed because produce high-intensity magnetic field, make it be in superconducting state, therefore superconducting magnet and cooled cryostat can be gathered together and realize utmost point low temperature and two kinds of functions of high-intensity magnetic field.Superconducting magnet generally has two kinds of structures, and a kind of is to utilize the inner evenly parallel magnetic field of superconducting coil, during experiment sample is placed coil inside.The benefit of this structure is, magnetic field can add very greatly, and defective is to can be used for passing the sample except the coil upper and lower opening, and the side can't observing samples.Another kind of structure is to split magnetic structure, is to utilize two coil south poles opposite positions to produce the principle in flat shape magnetic field.Benefit is, the side can have living space and be used for observing samples.Defective is can reach magnetic field intensity not as good as first kind.Acquisition for ultrahigh vacuum then realizes by vacuum pump system.General conductivity test means are four-electrode methods at present.Be outermost the two poles of the earth galvanizations, voltage is surveyed at middle the two poles of the earth.The benefit of four-electrode method is farthest to reduce the influence of contact resistance and non-essential resistance.Against vacuum is the membraneous material or the nano material of preparation down, and four-electrode method has following several implementation: 1, depositing electrode on testing sample, on electrode, draw plain conductor again, and at last lead is adhered on macroscopical electrode of measuring table and measure.The defective of this method is that sample exists the process that exposes atmosphere, sustains damage probably; 2, the pre-buried good electrode of elder generation before the preparation film sample is also promptly carried out the long again film of electrode earlier.Defective is to carry out high-temperature heating treatment, makes a variety of samples to prepare; 3, four probe method is promptly served as four electrodes with accurate four controlled probes and is pressed on the sample to be measured and measures.The benefit of this measurement is the preparation process that has saved sample electrode, can carry out the measurement of original position (promptly not going out ultrahigh vacuum) to most samples.The four point probe system that is used for ultrahigh vacuum at present mainly contain the four point probe system that the surface measurements attitude electricity of the four point probe system of the measurement nano-device that Omicron company produces and the exploitation of Japanese Hasegawa seminar leads (Surface Science493 (2001), 633-643).The four point probe system of their two families adopts the drive unit of piezoelectric ceramics as probe, can realize four probes moving freely on sample surfaces.Therefore the electricity that can be used to measure nanostructured is led rerum natura and the semiconductor samples surface surface state electricity of seeing in the size that is situated between and is led.Simultaneously, these probes also have certain function of STM concurrently, can be used to characterize the sample surfaces pattern.Yet four probes in the four-probe arrangement of Omicron become four jiaos of distributions with the corresponding driving device, and the four-probe arrangement of Hasegawa seminar becomes fan-shaped distribution, and shared volume is all very big.Therefore these two kinds of designs all are difficult to be applied in the high-intensity magnetic field that can observe, promptly split in the magnetic magnet.These two kinds of designs simultaneously are bulky because of it, and cryogenic refrigeration efficient is very low.
Eight, ultra-high vacuum system is meant under the environment of artificial ultrahigh vacuum and (is made up of the stainless-steel vacuum chamber usually), to the system that dissimilar samples is grown, sign and rerum natura are measured.Current, ultra-high vacuum system has been applied in each research fields such as semiconductor, physics, chemistry, material and bio-science.We know, ultrahigh vacuum MBE equipment can atomic monolayer controllably grow various semiconductors, metallic film and nanometer island.Need under a lot of situations of growth quality to characterize and judge by pattern.But because a lot of sample can suffer the damage of oxidation or other form after exposing atmosphere, ultrahigh vacuum MBE chamber preferably can be integrated in the same ultra-high vacuum system with the equipment (as STM) that pattern characterizes.For the sample that characterized (film or nanometer island), we wish to obtain the information of electronic transport aspect under a lot of situations.This just requires the ultra-high vacuum system can also integrated electronic transport measurement function.Yet present commercial ultra-high vacuum system major function concentrates on growth and sign aspect, and also not occurring can be with fine integrated systems of function such as growth, analysis, sign and electronic transport tests.
The utility model content
At problems of the prior art, the purpose of this utility model is to provide a kind of Multifunction ultra-high vacuum system, this system adopts novel project organization, and the functions such as growth, analysis, sign and electronic transport test of sample are integrated together well.
For achieving the above object, a kind of novel ultrahigh vacuum growth in situ of the utility model, sign and test macro mainly comprise: the MBE growth room, the sample analysis chamber, STM chamber and vibration-damped table, described vibration-damped table comprises three air legs, three steel cages and triangular supports, steel cage is vertically mounted on three angles of triangular supports, described steel cage is a semi-surrounding shape, and be set with on described three air legs, near on the position at three angles back up pad is being installed also respectively on the described A-frame, described MBE growth room, sample analysis chamber and STM chamber are arranged on this back up pad, and described back up pad is lower than the height of described air leg apart from the height on ground; Vacuum seal links to each other with metallic bellows by slide valve respectively between between described MBE growth room and the described sample analysis chamber and described sample analysis chamber and the described STM chamber.
Further, cylindric first vacuum chamber that make based on 316 or 304 immortal steel described MBE chamber, be respectively arranged with MBE source stove (K-cell) on described first vacuum chamber, high electron energy diffractometer (RHEED), five dimension low temperature sample manipulations platforms (Manipulator), first sample transmission rod, view window, the ultrahigh vacuum pumping system, gas admittance valve, cold cover of liquid nitrogen and ion gauge, described five dimension low temperature sample manipulations platforms are arranged on the described first vacuum chamber top, be used for the reception and the heating of sample, refrigeration, described first sample transmission rod is the magnetic force bar, be horizontally installed on the described first vacuum chamber sidewall and run through this vacuum chamber, the sample that is used between described MBE chamber and sample analysis chamber transmits, described ultrahigh vacuum pumping system is by dried pump, molecular pump, ionic pump sublimation pump sundstrand pump constitutes, view window is mounted in the windowpane on the described first vacuum chamber sidewall, is used to observe the situation in this vacuum chamber.
Further, second vacuum chamber body that make with 316 or 304 stainless steels described sample analysis chamber, this vacuum chamber are provided with quick Sample Room, four-dimensional sample manipulations platform, low electron energy diffractometer and Auger spectrometer association system (LEED/AES), argon-ion gun, metal evaporation sources, ion gauge, view window and gas admittance valve; Described quick Sample Room is a stainless-steel vacuum chamber, is provided with vacuum pump and takes out mouth, and be provided with sample passes sample between described quick Sample Room and analysis room second sample transmission rod, and described second sample transmission rod also is the magnetic force bar; Described four-dimensional sample manipulations platform is arranged on the described second vacuum chamber top, can do three-dimensional linear movement and around the rotation of main shaft, and can the sample that receive be heated, described four-dimensional sample manipulations platform is also installed sample receiving device, is used for depositing in ultrahigh vacuum sample; Between described sample analysis chamber and described STM chamber the 3rd sample transmission rod is installed also, the 3rd sample transmission rod also is the magnetic force bar.
Further, be provided with rerum natura measuring system under system of Scanning Tunneling Microscope and the extreme condition in the described STM chamber, but the rerum natura measuring system is made up of cooled cryostat and alternating temperature insertion device under the described extreme condition, described cooled cryostat is a sandwich construction, and its inside is ultrahigh vacuum, is liquid nitrogen storehouse and liquid helium storehouse in the interlayer, superconducting magnet coil is installed in the bottom in liquid helium storehouse, after liquid helium was injected in the liquid helium storehouse, liquid helium can be with whole superconducting magnet submergence, and described superconducting magnet is for splitting magnetic structure; Described cooled cryostat is connected with described sample analysis chamber at the superconducting magnet height and position, described cooled cryostat top connects vacuum pump system, rotatable platform is passed through at the top, but soft wave pipe and hard spring are installed described alternating temperature and are inserted device, described soft wave pipe and hard spring constitute shock attenuation device, but be used to reduce the vibration that described alternating temperature inserts bottom of device, it is cylindrical that but described alternating temperature insertion bottom of device is equipped with this sample receiving device of the gold-plated sample receiving device of a red copper, the middle part hollow out, be used to receive sample, the upper and lower is installed two step motor respectively, four motors aim at sample and are arranged in a linear, each motor has a scanatron parallel with sample surfaces, the STM probe is housed on the scanatron, away from the scanatron more close sample on the direction of sample normal on two step motor of sample, each motor by on three directions of XYZ movably three stepper motors form, make the STM probe to move freely at sample surfaces, described four probes become miter angle with sample surfaces, and are vertical in twos between four.
Further, described vibration-damped table is arranged on the cement platform, be equipped with the sand that is used for damping below the cement platform, described cement platform with separate by zanjon all around, the zanjon outside also is provided with wooden shielding room whole cement platform and ultra-high vacuum system is wrapped in wherein, the room outer wall is surrounded by aluminium skin or the copper sheet that is used for shielding electromagnetic wave, and wall is stained with the acoustical cotton that influences of eliminating audio frequency vibration within doors.
The beneficial effects of the utility model are: 1, MBE chamber, sample analysis chamber and STM chamber are linked to each other by slide valve respectively, can realize the functions such as growth, analysis, sign and test of sample, independently of one another again interference-free as individuality simultaneously, can give full play to its specific function; 2, adopt the superconduction magnetic split magnetic structure, make that carrying out Experiments of Optics in the STM chamber becomes possibility, the STM needle point that wherein is used to characterize pattern also can be used as the electrode that rerum natura is measured simultaneously, has simplified total system; 3, whole ultra-high vacuum system is placed on the specific shock bracket, shock bracket is placed on the cement platform of being separated by with the external world, be equipped with the sand that is used for damping below the cement platform, also be provided with wooden shielding room around the cement platform, the room outer wall is wrapped by aluminium skin or copper sheet and is used for shielding electromagnetic wave, wall is stained with acoustical cotton within doors, eliminates the influence of audio frequency vibration, has realized well that therefore the pattern of STM characterizes function; 4, the sample receiving device in the STM chamber is equipped with four-probe arrangement in the utility model, and be in line in the sample both sides design of arranging and the design on scanatron parallel sample surface of four groups of stepper motors that drive probe significantly reduced the shared volume of four-probe arrangement, makes this four-probe arrangement can be applicable to the occasion of utmost point low temperature, high-intensity magnetic field and optical test.
Description of drawings
Fig. 1 is the utility model perspective view.
Fig. 2 a is the structural representation of sample analysis chamber, and Fig. 2 b is the vertical view of Fig. 2 a.
Fig. 3 a is the structural representation of MBE growth room, and Fig. 3 b is the vertical view of Fig. 3 a.
Fig. 4 is a MBE growth room structural profile synoptic diagram.
Fig. 5 a is the structural representation of STM chamber, and Fig. 5 b is the vertical view of Fig. 5 a.
Fig. 6 is a STM chamber interior structural representation.
But Fig. 7 is the structural representation that alternating temperature inserts device.
Fig. 8 is a kind of four point probe STM device synoptic diagram.
Fig. 9 is the synoptic diagram that four probe method MEASUREMENTS OF THIN electricity is led.
Figure 10 is the scheme of installation of stepper motor.
Figure 11 is the structural representation of external vibration-absorbing mechanism.
Figure 12 is the structural representation of sample transmission rod.
Figure 13 is the structural representation of sample holder.
Embodiment:
Embodiment 1
As shown in Figure 1, the utility model comprises: MBE growth room 2, sample analysis chamber 1, STM chamber 3 and vibration-damped table 4, vibration-damped table 4 comprises three air legs 5,6,7, three steel cages 8,9,10 and triangular supports 11, steel cage 8,9,10 are vertically mounted on three angles of triangular supports 11, steel cage 8,9,10 is semi-surrounding shape, and be set in three air legs 5,6, on 7, near on the position at three angles back up pad is being installed also respectively on the A-frame 11, MBE growth room 2, sample analysis chamber 1 and STM chamber 3 are arranged on this back up pad, and vacuum seal links to each other with metallic bellows by slide valve between between MBE growth room 2 and the sample analysis chamber 1 and sample analysis chamber 1 and the STM chamber 2.
Based on 316 or 304 stainless first ultrahigh vacuum cavities 12, this vacuum chamber 12 is provided with quick Sample Room 13, four-dimensional sample manipulations platform 14, low electron energy diffractometer and Auger spectrometer association system 20 (LEED/AES), argon-ion gun 15, metal evaporation sources 16, ion gauge as Fig. 2 a, b sample analysis chamber 1; Sample Room 13 is stainless-steel vacuum chambers fast, be provided with vacuum pump and take out mouth, sample is housed fast at second driven rod 17 that passes sample fast between Sample Room 13 and the analysis room 1 on the Sample Room 13, gas admittance valve 18 and slide valve 19, second sample transmission rod 17 is the magnetic force bar, four-dimensional sample manipulations platform 14 is arranged on second vacuum chamber, 12 tops, can do three-dimensional linear movement and around the rotation of main shaft, and can the sample that receive be heated, four-dimensional sample manipulations platform 14 is also installed sample receiving device, be used in ultrahigh vacuum, depositing sample, it also is the magnetic force bar that the 3rd sample transmission rod 49, the three sample transmission rods 49 also are installed between sample analysis chamber 1 and STM chamber 2.The LEED/AES20 that analyzes surface structure and component be used for the argon-ion gun 15 of clean surface and constitute the main analysis means of sample analysis chambers 1.Argon-ion gun 15 and LEED/AES20 are contained on the sustained height plane, if when high-energy argon ion is destroyed sample surfaces, use LEED/AES20, but the structure of analytic sample inside and elemental composition.Argon-ion gun 15 obtains argon ion by the cracking argon gas, and argon gas is injected into argon-ion gun 15 by all-metal leakage valve 21.Molecular pump 22 is installed in the upper/lower positions that leans on of second ultrahigh vacuum cavity 12 by transition metal chamber 23 and slide valve 24.Molecular pump 22 is connected to dried pump, constitutes the main pump and the forepump of sample analysis chamber.Gas admittance valve 8 position relative on ultrahigh vacuum cavity 1 with molecular pump 14.Ionic pump titanium pump sundstrand pump 24 is positioned at second ultrahigh vacuum cavity 12 bottom.Simple sample grown device---metal evaporation sources 25 also is housed on second ultrahigh vacuum cavity 12, can be used for the growth of metal materials such as iron, cobalt, nickel.Sample transmission rod 17 over against the position slide valve 26 and metallic bellows 27 are arranged, be used for connecting STM chamber 3, sample transmission rod 17 is used for realizing the transmission of sample between STM chamber 3 and sample analysis chamber 1.Using the purpose of metallic bellows 27 is to eliminate stress.Flange 28 on second ultrahigh vacuum cavity 12 is used for connecting MBE chamber 2, and the transmission of sample between MBE chamber 2 and sample analysis chamber 1 will be passed through this flange 28.On second ultrahigh vacuum cavity 12 a large amount of view windows is housed also, because the observation to second ultrahigh vacuum cavity, 12 inside is absolutely necessary in experiment or the biography sample process.
As Fig. 3 a, shown in the b, cylindric first vacuum chamber 31 that make based on 316 or 304 immortal steel MBE chamber 2, be respectively arranged with MBE source stove 32 on first vacuum chamber 31, high electron energy diffractometer 33, five dimension low temperature sample manipulations platforms 34, first sample transmission rod 42, view window 35, ultrahigh vacuum pumping system 36, gas admittance valve 37, cold cover 38 of liquid nitrogen and ion gauge 39, five dimension low temperature sample manipulations platforms 34 are arranged on first vacuum chamber, 31 tops, can do three-dimensional linear movement and around the rotation of main shaft, and can the sample that receive be rotated, be used for the reception and the heating of sample, refrigeration, first sample transmission rod 42 is the magnetic force bar, be horizontally installed on first vacuum chamber, 31 sidewalls and run through this vacuum chamber 31, the sample that is used for 1 of MBE chamber 2 and sample analysis chamber transmits, ultrahigh vacuum pumping system 36 is by dried pump, molecular pump, ionic pump sublimation pump sundstrand pump constitutes, view window 35 is mounted in the windowpane on first vacuum chamber, 31 sidewalls, is used to observe the situation in this vacuum chamber.Become in the axis with first ultrahigh vacuum cavity 31 on 35 ° the direction, 5 K-cell sources 40 are distributing.Fig. 4 is the structural profile synoptic diagram of MBE chamber 2.By the advancing nitrogen mouth 41 and liquid nitrogen can be poured in the cold cover 38 of liquid nitrogen of the cold cover 38 of liquid nitrogen, the unnecessary liquid nitrogen or the nitrogen of evaporation can be discharged by denitrogen mouth 42.During the MBE growth, K-cell40 heats up, and atom and atomic group fly out from K-cell40, is deposited on the sample, and this moment, the RHEED rifle penetrated electronics, and glancing incidence is analyzed the upgrowth situation that these diffraction fringes are just known sample surfaces to the surface of sample.
As Fig. 5 a, b, Fig. 6 and shown in Figure 7, STM chamber 3 is based on cooled cryostat 51.Cooled cryostat 51 is a sandwich construction, its inside is ultrahigh vacuum, in the interlayer liquid nitrogen storehouse 71 and liquid helium storehouse 72, superconducting magnet 73 is installed in the bottom in liquid helium storehouse 72, and after liquid helium was injected in liquid helium storehouse 72, liquid helium can be with whole superconducting magnet 73 submergences, superconducting magnet 73 is for splitting magnetic structure, the flange port 52 of Dewar 51 bottoms is used to connect sample analysis chamber 1, and the view window 53 on the sustained height is used for monitoring the transmission of sample and moving of STM probe, also can be used to logical laser and does the SMOKE experiment.Alternating temperature inserts device 54 and is installed on the Dewar 51 by rotatable platform 55 and soft wave pipe 56, and is installed in the ultrahigh vacuum inside of cooled cryostat 51 by the flange 86 of flange 87 and cooled cryostat 51.Alternating temperature insertion device 54 is furnished with liquid helium jar 88 and liquid helium kettle 89 is used for sample and the four-probe arrangement of sample receiving device together with its inside freezed.The bracing or strutting arrangement 58 that hard spring is equipped with in regulating device 57, inside is formed the shock attenuation device that alternating temperature inserts device 54 with soft wave pipe 56, and the vibration that alternating temperature inserts device 54 bottoms is passed in the outside of can decaying effectively.The bottom that alternating temperature inserts device 54 is between the superconducting magnet 73 and view window 74 and sample import mouthfuls 75 into and be in sustained height, and the gold-plated sample receiving device of red copper is installed between the superconducting magnet 73.The STM probe is very responsive to ambient vibration when sweeping figure (sign pattern), so need set up corresponding damping.The utility model vibration-damped table 4 is arranged on the cement platform 101 as shown in figure 11, be equipped with the sand that is used for damping below the cement platform 101, cement platform 101 with separate by zanjon all around, the zanjon outside also is provided with wooden shielding room 102 whole cement platform 101 and ultra-high vacuum system is wrapped in wherein, the room outer wall is surrounded by aluminium skin or the copper sheet that is used for shielding electromagnetic wave, wall is stained with the acoustical cotton that influences of eliminating audio frequency vibration within doors, can play good damping, every the effect of noise, make the STM probe time obtain image information better in scanning.The flange port 59 on Dewar 51 tops links to each other with ionic pump titanium pump sundstrand pump 61 by transition metal chamber 60, and molecular pump 62 links to each other with transition metal chamber 60 with slide valve 64 by another adapter cavity 63.Two one of little flange ports on the transition metal chamber 60 tap into 65, one in air valve and connect vacuum gauge 66.When freeze in STM chamber 3, liquid nitrogen is injected into liquid nitrogen storehouse 71 from liquid nitrogen mouth 67, and liquid helium is injected into liquid helium storehouse 72 from liquid helium mouth 68.Electrical interface 69 is used to measure the liquid helium height in the liquid helium storehouse 71, and electrical interface 70 is used for the temperature survey and the heating of superconducting magnet.Fig. 6 is the inner structure synoptic diagram of STM chamber.We know that the space at sample receiving device place is very narrow and small by figure.So sample receiving device also can not be done greatly, and then the drive unit of STM probe also just has been subjected to size restrictions.The structure of first, second and third sample transmission rod as shown in figure 12, sample transmission rod is installed on each self-corresponding vacuum chamber by edge of a knife flange 103 respectively, and, silk hole 107 in as shown in figure 13 the sample holder 106 is entered in 105 rotations of sample transmission rod head, thereby passed sample by magnetic force bar handle 104 rotation.
Fig. 8 is a kind of synoptic diagram of four-probe arrangement structure.Four probes 72,73,74,75 are housed on the sample receiving device 71, probe 72,73 is installed on the step motor 78,79 by scanatron 76,77, probe 74,75 is installed on the step motor 80,81 by scanatron 91,92, step motor 78,79,80,90 is made up of three stepper motors that move on three directions of XYZ respectively, as shown in figure 10, probe 73 drives by stepper motor 97,98,99, and probe 72,74,75 too.Probe 72,73,74,75 points to the sample faces, and scanatron 76,77,91,92 is parallel with sample surfaces when biasing not.This horizontally disposed scanatron, the same with vertically disposed scanatron on the Z direction of vertical sample surfaces, can obtain atom definition.The benefit of this design is, one, saved the space effectively, and make four point probe in splitting magnetic structure, become possibility; Two, can scan the sample of big rise and fall on the Z direction.Be attached to four probes the 72,73,74, the 75th on the scanatron, by what can the three-dimensional stepper motor that moves drive, can move to any position of sample surfaces independently of one another respectively.Therefore both can be used as the electrode of conductivity test, and also can be used as the STM probe and sweep shape appearance figure, and can realize that pattern characterized and the dual-use function of nanostructured electronic transport test.Fig. 9 is that this four probe method is measured the synoptic diagram that the superconducting metal thin-film electro is led.Four probes are pressed on the film surface side by side, needle point in line, four probes become 45 degree with the surface, and become 90 to spend in twos between the probe.Because per two probes can lean on very closely, therefore be applicable to the electronic transport test of nanostructured.Four point probe need approach one (in 1 micron) very among a small circle each other when measuring the transport property of nanostructured, the method of optical CCD monitoring that adopts the utility model realizes slightly the approaching of probe (in 20 microns), the employing probing pin method of tunnel current to each other realizes carefully approaching (1 micron), sweeps the finally definite position to each other of figure by STM again.The two adjacent groups stepper motor can be installed in the cylindrical space of the high 60mm of diameter 30mm in the utility model, four point probe system than Omicron company and Hasegawa seminar on the size is little a lot, make this kind four point probe system be particularly suitable for being applied in the superconducting magnet of splitting magnetic structure, make that also under extreme conditions carrying out Experiments of Optics becomes possibility.In addition, each probe in the utility model all can be used as the pattern phenogram that STM obtains atom definition.
Growth and test with superconducting metal Pb film are that example is set forth application of the present utility model, select the substrate of Si (111) face as the growth of Pb film for use.At first silicon chip is fixed in the sample holder, open the quick Sample Room 13 among Fig. 2 a, with the sample support on second driven rod 17 of Sample Room 13, close Sample Room 13, with vacuum pump it is vacuumized, after the vacuum tightness of waiting to reach good, open the slide valve between Sample Room 13 and the ultrahigh vacuum cavity 12, silicon chip is passed on the sample manipulations platform 14 of ultrahigh vacuum sample analysis chamber 1, close slide valve then.Open the slide valve between sample analysis chamber and the MBE chamber, sample reception is tieed up on the low temperature sample manipulations platforms 14 to five of MBE chamber, close slide valve then with first sample transmission rod 42 of MBE chamber.With the gas and the impurity that adsorb on five dimension low temperature sample manipulations platforms, 14 heating silicon chips to the 400 ℃ removal silicon chip, ion gauge demonstration vacuum degenerates earlier and afterwards improves, and this is the process of degassing of silicon chip.Degas after the end, strengthen electric current in short time for silicon sample, make the silicon sample surface temperature reach 1200 ℃, thereby make the atom flash evapn reorganization on Si (111) surface instantaneous.Repeat repeatedly that vacuum tightness substantially no longer degenerates when high temperature.This process is called sudden strain of a muscle silicon, can obtain 7 * 7 structures again on Si (111) surface.Rotate the mechanism that horizontally rotates of five dimension low temperature control stands 14, forward sample to growth conditions from delivery status.Open the RHEED rifle, regulate the correct position of silicon sample, to five dimension sample manipulations platforms, 14 logical liquid nitrogen refrigeratings.Near thermometer shows silicon sample temperature is regulated and is filled nitrogen speed to make temperature remain on 150K constant behind 150K.K-cell to 420 ℃ of Pb source is equipped with in heating, and (actual temp depends on the circumstances.The high more growth line of temperature is big more, but the too low words of temperature do not have atom and atomic group line to send), open the baffle plate of K-cell, make Si (111) 7 * 7 surfaces of Pb atomic beam directive 150K.According to demarcating good growth rate (power of RHEED diffraction fringe can be demarcated the thickness of growing film, and then can determine the growth rate of certain material under the uniform temperature), the baffle plate before the Pb source K-cell that closes behind the certain hour.Si has gone up on (111) 7 * 7 surfaces the good certain thickness Pb film of just growth.Stop to five dimension low temperature control stands, 14 refrigeration, the temperature of K-cell is rolled back room temperature, have the silicon sample of Pb film to pass on the sample manipulations platform 14 of sample analysis chamber 1 with growing with first sample transmission rod 42.With sample manipulations platform 14 mobile example on the Z direction, rotate the position of sample simultaneously, make sample to be received by the 3rd sample transmission rod.Open the slide valve between sample analysis chamber 1 and the STM chamber 2, but adjust the position of the 3rd sample transmission rod and the position that alternating temperature inserts device 54, sample is sent on the sample receiving device 71.Close slide valve, but feed liquid helium in the liquid helium jar 3 of inserting device 54 for alternating temperature (annotate: filled with liquid nitrogen in 2 the liquid nitrogen storehouse 71, STM chamber this moment is marked with liquid helium in the liquid helium storehouse 72).Open needle-valve 95 and make liquid helium refrigeration sample receiving device 71.Can obtain the low temperature of 2K by mechanical pump to the decompression of helium in the liquid helium jar 88, insert the heating arrangement of device 54, can realize the alternating temperature of 2K-300K near sample receiving device 71 but regulate alternating temperature.At this moment, adopt the four point probe structure, characterize the pattern of Pb film earlier with a STM probe, the quality of determining the Pb film pretty good after, four probes are pressed in Pb film surface (Ohmic contact) arrange in a line.Two probes in the outside pass to electric current, and inboard two probe detecting voltages can be measured the low-temperature characteristics and the superconducting characteristic of superconduction Pb film.Can introduce magnetic field in the measuring process, draw the upper critical and the magnetic conductance character of certain thickness Pb film.Growth in situ, sign and the test process of Here it is Pb film.Because sample needn't take out vacuum chamber in the whole experiment kind, so can not destroyed.In like manner, can carry out growth in situ, sign and the test of materials such as In film, Bi film.
Covering superconducting thin film on the magnetic quantum dot array carries out the rerum natura measurement and relates to three processes, the one, the preparation of magnetic quantum dot, the 2nd, the growth of superconducting thin film, the 3rd, the measurement that thin-film electro is led.If these three kinds of functions can not concentrate in the cover ultra-high vacuum system, will introduce total total difficulty and then cause the failure of experiment.Therefore growth, sign and the test of original position just seem particularly important.But the complete same quantum dot array of magnetic of the sample analysis chamber growing high-quality in the utility model, but the superconduction Pb film of MBE chamber growing high-quality can not pollute mutually or disturb again each other.Specifically experimentation as follows: give the silicon chip degasification in the sample analysis chamber, dodge silicon, utilize metal evaporation sources that magnetic metal is steamed on Si (111) 7 * 7 surfaces then, coverage on the Si surface just can obtain the magnetic quantum dot array of the big or small similar nanometer scale of shape to the control speed of growth with temperature and magnetic metal atom, then sample is passed to the MBE chamber, with preceding method growth Pb film, pass to the STM chamber at last and carry out pattern sign and electronic transport measurement.
Rerum natura measuring chamber in the utility model links to each other with powerful sample preparation system (MBE chamber, sample analysis chamber), has greatly widened the range of application of four point probe.Such as the nano level Pb of the area micron order height island of in the MBE chamber, can growing, because silicon substrate has a silicon bench every about 100 nanometers (concrete numerical value depends on the circumstances) after dodging silicon, therefore the Pb island on the silicon substrate is along consistency of thickness on the direction of silicon bench, thickness difference on the direction of vertical silicon step.Electronic structure because of the Pb island presents quantum well states on thickness direction simultaneously, leads anisotropy along having electricity on the both direction of silicon bench and vertical silicon step.Use four probe method of the present utility model, on the direction of Pb island perpendicular steps, two points are on the step direction in addition with two probe points, and 4 constitute rectangle.Two of perpendicular steps direction probes added electric current before this, in addition surveyed voltages for two, after be that two probes of parallel step direction add electric current, survey voltages for two in addition.Relatively two groups of data just can verify that anisotropic electricity leads.
Plated metal is easy to obtain along the metal nanometer line of step growth on the high-index surface of silicon, but the conductance property of these nano wires is difficult to measure.Yet four point probe of the present utility model can be measured the electricity of this type of nano wire in situ and lead.
IIIV compound semiconductor GaAs can grow in MBE chamber in the utility model.Can construct the multiple nanostructureds that are applied to spintronics such as quantum dot, single-electronic transistor based on GaAs.Magnetic field can be added to 12Tesla in the utility model, can cause the Zeeman division of electron spin, and laser can shine the electronics that sample surfaces excites spin polarization by view window.Therefore the utility model is applicable to the spin transport test of GaAs nanostructured.
Se nanotube and nano wire are photoconductive materials, but for the photoconductive effect under low temperature, the magnetic field never the someone tested.Because most of cryogenic magnetic field measuring equipments are not the magnetic structures of splitting that adopts, can't be with illumination to sample surfaces.And employing the utility model just can be measured the photoconductive property of Se pipe and line under the situation of low temperature, magnetic field, illumination.
Claims (5)
1, a kind of novel ultrahigh vacuum growth in situ, characterize and test macro, it is characterized in that, comprise: the MBE growth room, the sample analysis chamber, STM chamber and vibration-damped table, described vibration-damped table comprises three air legs, three steel cages and triangular supports, steel cage is vertically mounted on three angles of triangular supports, described steel cage is a semi-surrounding shape, and be set with on described three air legs, near on the position at three angles back up pad is being installed also respectively on the described A-frame, described MBE growth room, sample analysis chamber and STM chamber are arranged on this back up pad, and described back up pad is lower than the height of described air leg apart from the height on ground; Vacuum seal links to each other with metallic bellows by slide valve respectively between between described MBE growth room and the described sample analysis chamber and described sample analysis chamber and the described STM chamber.
2, a kind of novel ultrahigh vacuum growth in situ according to claim 1, characterize and test macro, it is characterized in that, cylindric first vacuum chamber that make based on 316 or 304 immortal steel described MBE chamber, be respectively arranged with MBE source stove on described first vacuum chamber, high electron energy diffractometer, five dimension low temperature sample manipulations platforms, first sample transmission rod, view window, the ultrahigh vacuum pumping system, gas admittance valve, cold cover of liquid nitrogen and ion gauge, described five dimension low temperature sample manipulations platforms are arranged on the described first vacuum chamber top, be used for the reception and the heating of sample, refrigeration, described first sample transmission rod is the magnetic force bar, be horizontally installed on the described first vacuum chamber sidewall and run through this vacuum chamber, the sample that is used between described MBE chamber and sample analysis chamber transmits, described ultrahigh vacuum pumping system is by dried pump, molecular pump, ionic pump sublimation pump sundstrand pump constitutes, view window is mounted in the windowpane on the described first vacuum chamber sidewall, is used to observe the situation in this vacuum chamber.
3, a kind of novel ultrahigh vacuum growth in situ according to claim 1 and 2, sign and test macro, it is characterized in that, second vacuum chamber body that make with 316 or 304 stainless steels described sample analysis chamber, this vacuum chamber are provided with quick Sample Room, four-dimensional sample manipulations platform, low electron energy diffractometer and Auger spectrometer association system, argon-ion gun, metal evaporation sources, ion gauge, view window and gas admittance valve; Described quick Sample Room is a stainless-steel vacuum chamber, is provided with vacuum pump and takes out mouth, and be provided with sample passes sample between described quick Sample Room and analysis room second sample transmission rod, and described second sample transmission rod also is the magnetic force bar; Described four-dimensional sample manipulations platform is arranged on the described second vacuum chamber top, can do three-dimensional linear movement and around the rotation of main shaft, and can the sample that receive be heated, described four-dimensional sample manipulations platform is also installed sample receiving device, is used for depositing in ultrahigh vacuum sample; Between described sample analysis chamber and described STM chamber the 3rd sample transmission rod is installed also, the 3rd sample transmission rod also is the magnetic force bar.
4, a kind of novel ultrahigh vacuum growth in situ according to claim 3, characterize and test macro, it is characterized in that, be provided with rerum natura measuring system under system of Scanning Tunneling Microscope and the extreme condition in the described STM chamber, but the rerum natura measuring system is made up of cooled cryostat and alternating temperature insertion device under the described extreme condition, described cooled cryostat is a sandwich construction, its inside is ultrahigh vacuum, in the interlayer liquid nitrogen storehouse and liquid helium storehouse, superconducting magnet coil is installed in the bottom in liquid helium storehouse, after liquid helium is injected in the liquid helium storehouse, liquid helium can be with whole superconducting magnet submergence, and described superconducting magnet is for splitting magnetic structure; Described cooled cryostat is connected with described sample analysis chamber at the superconducting magnet height and position, described cooled cryostat top connects vacuum pump system, rotatable platform is passed through at the top, but soft wave pipe and hard spring are installed described alternating temperature and are inserted device, described soft wave pipe and hard spring constitute shock attenuation device, but be used to reduce the vibration that described alternating temperature inserts bottom of device, it is cylindrical that but described alternating temperature insertion bottom of device is equipped with this sample receiving device of the gold-plated sample receiving device of a red copper, the middle part hollow out, be used to receive sample, the upper and lower is installed two step motor respectively, four motors aim at sample and are arranged in a linear, each motor has a scanatron parallel with sample surfaces, the STM probe is housed on the scanatron, away from the scanatron more close sample on the direction of sample normal on two step motor of sample, each motor by on three directions of XYZ movably three stepper motors form, make the STM probe to move freely at sample surfaces, described four probes become miter angle with sample surfaces, and are vertical in twos between four.
5, a kind of novel ultrahigh vacuum growth in situ according to claim 4, sign and test macro, it is characterized in that, described vibration-damped table is arranged on the cement platform, be equipped with the sand that is used for damping below the cement platform, described cement platform with separate by zanjon all around, the zanjon outside also is provided with wooden shielding room whole cement platform and ultra-high vacuum system is wrapped in wherein, and the room outer wall is surrounded by aluminium skin or the copper sheet that is used for shielding electromagnetic wave, and wall is stained with the acoustical cotton that influences of eliminating audio frequency vibration within doors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2005201326512U CN2837831Y (en) | 2005-11-11 | 2005-11-11 | Ultra-high vacuum in-situ growth, characterization and test system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2005201326512U CN2837831Y (en) | 2005-11-11 | 2005-11-11 | Ultra-high vacuum in-situ growth, characterization and test system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2837831Y true CN2837831Y (en) | 2006-11-15 |
Family
ID=37392318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2005201326512U Expired - Fee Related CN2837831Y (en) | 2005-11-11 | 2005-11-11 | Ultra-high vacuum in-situ growth, characterization and test system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2837831Y (en) |
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101315317B (en) * | 2007-06-01 | 2010-11-03 | 北京有色金属研究总院 | Test method of material mesoscopic mechanics |
| CN102434621A (en) * | 2011-08-31 | 2012-05-02 | 北京大学 | Vibration reduction structure of low-temperature scanning near-field optical microscope |
| CN103792443A (en) * | 2012-11-01 | 2014-05-14 | 国家纳米科学中心 | Probe bench, and organic thin-film device preparation and test integrated system and method |
| CN104122415A (en) * | 2014-07-25 | 2014-10-29 | 潘明虎 | Multi-probe scanning microscopy and transport measurement apparatus |
| CN104291017A (en) * | 2014-10-25 | 2015-01-21 | 中国科学技术大学 | Demountable independent vacuum cavity with in-situ measurement effect |
| CN104614654A (en) * | 2013-11-04 | 2015-05-13 | 华东师范大学 | Automatic test system for testing multiple electrical parameters of semiconductor |
| CN104749470A (en) * | 2015-04-13 | 2015-07-01 | 清华大学 | Transport property measuring system |
| CN104749325A (en) * | 2015-04-13 | 2015-07-01 | 清华大学 | In-situ transport property measurement method |
| CN104777193A (en) * | 2015-04-13 | 2015-07-15 | 清华大学 | In-situ transport property measurement device |
| CN105403541A (en) * | 2014-09-10 | 2016-03-16 | 冠研（上海）企业管理咨询有限公司 | Sample adjustment controller |
| CN105466962A (en) * | 2014-09-10 | 2016-04-06 | 冠研（上海）企业管理咨询有限公司 | Sample adjustment controller having oxygen free copper material |
| CN105548015A (en) * | 2016-01-13 | 2016-05-04 | 中国科学院合肥物质科学研究院 | Small-pore-diameter long-distance optical compatible vacuum sample cavity |
| CN105628978A (en) * | 2014-11-04 | 2016-06-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ultrahigh vacuum sample transfer device and transfer method |
| CN105987845A (en) * | 2015-02-15 | 2016-10-05 | 中国科学院大连化学物理研究所 | One-to-two temperature control sample holder |
| CN106435509A (en) * | 2016-12-14 | 2017-02-22 | 盐城工学院 | Ultrahigh vacuum catalysis device and cluster deposition equipment |
| CN106637416A (en) * | 2016-12-28 | 2017-05-10 | 厦门大学 | Molecular beam epitaxy and in-situ characterization device under vector strong magnetic field |
| CN106711324A (en) * | 2016-11-18 | 2017-05-24 | 北京航空航天大学 | Magnetic multilayer film structure development method |
| CN107389455A (en) * | 2017-09-05 | 2017-11-24 | 中国工程物理研究院流体物理研究所 | The heat sink and method of sample initial temperature in being compressed for Magnetic driving oblique wave |
| CN107525846A (en) * | 2017-10-11 | 2017-12-29 | 北京大学 | A kind of compatible low temperature high-intensity magnetic field original position feeding device of ultrahigh vacuum |
| CN108045959A (en) * | 2017-11-30 | 2018-05-18 | 清华大学 | Biography sample interconnect device between different vacuum degree chambers |
| CN108445330A (en) * | 2018-06-12 | 2018-08-24 | 清华大学 | Original position detection device |
| CN108660419A (en) * | 2017-03-31 | 2018-10-16 | 中国科学院大连化学物理研究所 | One kind is based on volatile corrosion substance film deposition under UHV condition and catalysis reaction test device |
| CN109444331A (en) * | 2018-09-30 | 2019-03-08 | 中国科学技术大学 | A kind of ultrahigh vacuum heating device and its heating means |
| CN110257904A (en) * | 2019-06-18 | 2019-09-20 | 西安交通大学 | A kind of packaged type compact ultrahigh vacuum coating system and interconnection method |
| CN110320389A (en) * | 2019-08-02 | 2019-10-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of original position property test system and sample mounting procedure |
| CN110487609A (en) * | 2019-09-06 | 2019-11-22 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum in-situ film etches electrode growth system |
| CN110501528A (en) * | 2019-09-06 | 2019-11-26 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum pole low-temperature in-site multiprobe transportation measuring system |
| CN110501527A (en) * | 2019-09-06 | 2019-11-26 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum original position miniature thin-film and electrode growth system |
| CN111876729A (en) * | 2020-07-02 | 2020-11-03 | 中国科学技术大学 | STM-MBE combined system |
| CN112864039A (en) * | 2021-04-28 | 2021-05-28 | 苏州大学 | Intelligent monitoring equipment for in-situ electrical performance of organic semiconductor device |
| CN113237943A (en) * | 2021-05-12 | 2021-08-10 | 中国科学技术大学 | Mass spectrometry detection H is reduced2And H2Ultrahigh vacuum device with O background noise |
| CN113655078A (en) * | 2021-07-23 | 2021-11-16 | 苏州华杨科学仪器有限公司 | Sample vacuum preparation cavity |
| CN114965866A (en) * | 2021-02-24 | 2022-08-30 | 中国科学院物理研究所 | System for measuring physical properties of materials |
-
2005
- 2005-11-11 CN CNU2005201326512U patent/CN2837831Y/en not_active Expired - Fee Related
Cited By (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101315317B (en) * | 2007-06-01 | 2010-11-03 | 北京有色金属研究总院 | Test method of material mesoscopic mechanics |
| CN102434621A (en) * | 2011-08-31 | 2012-05-02 | 北京大学 | Vibration reduction structure of low-temperature scanning near-field optical microscope |
| CN103792443A (en) * | 2012-11-01 | 2014-05-14 | 国家纳米科学中心 | Probe bench, and organic thin-film device preparation and test integrated system and method |
| CN103792443B (en) * | 2012-11-01 | 2016-09-28 | 国家纳米科学中心 | Probe station, preparation and the integrated system and method for test of organic film device |
| CN104614654A (en) * | 2013-11-04 | 2015-05-13 | 华东师范大学 | Automatic test system for testing multiple electrical parameters of semiconductor |
| CN104614654B (en) * | 2013-11-04 | 2017-09-19 | 华东师范大学 | A kind of automatization test system of multichip semiconductor electrical parameter |
| CN104122415A (en) * | 2014-07-25 | 2014-10-29 | 潘明虎 | Multi-probe scanning microscopy and transport measurement apparatus |
| CN105403541A (en) * | 2014-09-10 | 2016-03-16 | 冠研（上海）企业管理咨询有限公司 | Sample adjustment controller |
| CN105403541B (en) * | 2014-09-10 | 2018-06-29 | 冠研（上海）专利技术有限公司 | Sample adjusts controller |
| CN105466962A (en) * | 2014-09-10 | 2016-04-06 | 冠研（上海）企业管理咨询有限公司 | Sample adjustment controller having oxygen free copper material |
| CN105466962B (en) * | 2014-09-10 | 2018-04-06 | 冠研（上海）专利技术有限公司 | Sample adjustment controller with oxygenless copper material |
| CN104291017B (en) * | 2014-10-25 | 2017-07-28 | 中国科学技术大学 | A kind of releasable independent vacuum cavity with site measurement effect |
| CN104291017A (en) * | 2014-10-25 | 2015-01-21 | 中国科学技术大学 | Demountable independent vacuum cavity with in-situ measurement effect |
| CN105628978A (en) * | 2014-11-04 | 2016-06-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ultrahigh vacuum sample transfer device and transfer method |
| CN105628978B (en) * | 2014-11-04 | 2018-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ultrahigh vacuum sample transfer equipment and transfer method |
| CN105987845B (en) * | 2015-02-15 | 2018-06-19 | 中国科学院大连化学物理研究所 | One drag two temperature controls specimen holder |
| CN105987845A (en) * | 2015-02-15 | 2016-10-05 | 中国科学院大连化学物理研究所 | One-to-two temperature control sample holder |
| CN104777193A (en) * | 2015-04-13 | 2015-07-15 | 清华大学 | In-situ transport property measurement device |
| CN104749470A (en) * | 2015-04-13 | 2015-07-01 | 清华大学 | Transport property measuring system |
| CN104749470B (en) * | 2015-04-13 | 2017-08-11 | 清华大学 | Transport property measuring system |
| CN104749325B (en) * | 2015-04-13 | 2016-09-21 | 清华大学 | Transport property measuring method in situ |
| CN104749325A (en) * | 2015-04-13 | 2015-07-01 | 清华大学 | In-situ transport property measurement method |
| CN105548015A (en) * | 2016-01-13 | 2016-05-04 | 中国科学院合肥物质科学研究院 | Small-pore-diameter long-distance optical compatible vacuum sample cavity |
| CN106711324A (en) * | 2016-11-18 | 2017-05-24 | 北京航空航天大学 | Magnetic multilayer film structure development method |
| CN106435509B (en) * | 2016-12-14 | 2019-03-15 | 盐城工学院 | A kind of ultrahigh vacuum catalytic unit and Cluster deposition equipment |
| CN106435509A (en) * | 2016-12-14 | 2017-02-22 | 盐城工学院 | Ultrahigh vacuum catalysis device and cluster deposition equipment |
| CN106637416A (en) * | 2016-12-28 | 2017-05-10 | 厦门大学 | Molecular beam epitaxy and in-situ characterization device under vector strong magnetic field |
| CN106637416B (en) * | 2016-12-28 | 2018-11-20 | 厦门大学 | Molecular beam epitaxy and its in-situ characterization device under vector high-intensity magnetic field |
| CN108660419A (en) * | 2017-03-31 | 2018-10-16 | 中国科学院大连化学物理研究所 | One kind is based on volatile corrosion substance film deposition under UHV condition and catalysis reaction test device |
| CN108660419B (en) * | 2017-03-31 | 2020-09-01 | 中国科学院大连化学物理研究所 | Testing device for deposition and catalytic reaction of volatile corrosive substance film based on ultrahigh vacuum condition |
| CN107389455B (en) * | 2017-09-05 | 2023-06-06 | 中国工程物理研究院流体物理研究所 | Cooling device and method for initial temperature of sample in magnetic drive oblique wave compression |
| CN107389455A (en) * | 2017-09-05 | 2017-11-24 | 中国工程物理研究院流体物理研究所 | The heat sink and method of sample initial temperature in being compressed for Magnetic driving oblique wave |
| CN107525846A (en) * | 2017-10-11 | 2017-12-29 | 北京大学 | A kind of compatible low temperature high-intensity magnetic field original position feeding device of ultrahigh vacuum |
| CN108045959A (en) * | 2017-11-30 | 2018-05-18 | 清华大学 | Biography sample interconnect device between different vacuum degree chambers |
| CN108445330A (en) * | 2018-06-12 | 2018-08-24 | 清华大学 | Original position detection device |
| CN108445330B (en) * | 2018-06-12 | 2024-04-30 | 清华大学 | In-situ detection device |
| CN109444331A (en) * | 2018-09-30 | 2019-03-08 | 中国科学技术大学 | A kind of ultrahigh vacuum heating device and its heating means |
| CN110257904A (en) * | 2019-06-18 | 2019-09-20 | 西安交通大学 | A kind of packaged type compact ultrahigh vacuum coating system and interconnection method |
| CN110320389A (en) * | 2019-08-02 | 2019-10-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of original position property test system and sample mounting procedure |
| CN110487609B (en) * | 2019-09-06 | 2024-04-19 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum in-situ film etching electrode growth system |
| CN110501528A (en) * | 2019-09-06 | 2019-11-26 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum pole low-temperature in-site multiprobe transportation measuring system |
| CN110501527A (en) * | 2019-09-06 | 2019-11-26 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum original position miniature thin-film and electrode growth system |
| CN110501527B (en) * | 2019-09-06 | 2024-05-28 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum in-situ miniature film and electrode growth system |
| CN110487609A (en) * | 2019-09-06 | 2019-11-22 | 仪晟科学仪器(嘉兴)有限公司 | Ultrahigh vacuum in-situ film etches electrode growth system |
| CN111876729A (en) * | 2020-07-02 | 2020-11-03 | 中国科学技术大学 | STM-MBE combined system |
| CN111876729B (en) * | 2020-07-02 | 2021-08-13 | 中国科学技术大学 | STM-MBE combined system |
| CN114965866A (en) * | 2021-02-24 | 2022-08-30 | 中国科学院物理研究所 | System for measuring physical properties of materials |
| CN114965866B (en) * | 2021-02-24 | 2023-09-08 | 中国科学院物理研究所 | System for measuring physical properties of a material |
| CN112864039A (en) * | 2021-04-28 | 2021-05-28 | 苏州大学 | Intelligent monitoring equipment for in-situ electrical performance of organic semiconductor device |
| CN113237943B (en) * | 2021-05-12 | 2023-10-20 | 中国科学技术大学 | Reduce mass spectrum detection H 2 And H 2 Ultrahigh vacuum device for O background noise |
| CN113237943A (en) * | 2021-05-12 | 2021-08-10 | 中国科学技术大学 | Mass spectrometry detection H is reduced2And H2Ultrahigh vacuum device with O background noise |
| CN113655078A (en) * | 2021-07-23 | 2021-11-16 | 苏州华杨科学仪器有限公司 | Sample vacuum preparation cavity |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN2837831Y (en) | Ultra-high vacuum in-situ growth, characterization and test system | |
| Gaisch et al. | Low-temperature ultra-high-vacuum scanning tunneling microscope | |
| Moussy et al. | A very low temperature scanning tunneling microscope for the local spectroscopy of mesoscopic structures | |
| Pietzsch et al. | A low-temperature ultrahigh vacuum scanning tunneling microscope with a split-coil magnet and a rotary motion stepper motor for high spatial resolution studies of surface magnetism | |
| Larsen | Diffraction studies of crystals at low temperatures–crystallography below 77 K | |
| Ferris et al. | Design, operation, and housing of an ultrastable, low temperature, ultrahigh vacuum scanning tunneling microscope | |
| Orr et al. | A combined molecular‐beam epitaxy and scanning tunneling microscopy system | |
| Geng et al. | A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces | |
| CN104777193B (en) | Transport property measurement apparatus in situ | |
| CN102520378A (en) | Device and method for measuring magnetic flux frozen field of high-temperature superconductive single-domain bulk | |
| US10738394B2 (en) | Molecular beam epitaxy under vector strong magnetic field and in-situ characterization apparatus thereof | |
| Meckler et al. | A low-temperature spin-polarized scanning tunneling microscope operating in a fully rotatable magnetic field | |
| Orr et al. | Ultrahigh‐vacuum evaporation system with low‐temperature measurement capability | |
| Schulz et al. | Beetle‐like scanning tunneling microscope for ultrahigh vacuum and low‐temperature applications | |
| CN105132864A (en) | Combinational-film preparing and in-situ characterizing system | |
| CN112864039A (en) | Intelligent monitoring equipment for in-situ electrical performance of organic semiconductor device | |
| Tessmer et al. | Integrated cryogenic scanning tunneling microscopy and sample preparation system | |
| Lin et al. | Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy | |
| Mugele et al. | New design of a variable-temperature ultrahigh vacuum scanning tunneling microscope | |
| Bernius et al. | Cryogenic sample stage for the Cameca IMS‐3 f ion microscope | |
| Hernandez et al. | Bottom-loading dilution refrigerator with ultrahigh vacuum deposition capability | |
| Feng et al. | An entirely enclosed scanning tunnelling microscope capable of being fully immersed in liquid helium | |
| RU2389681C2 (en) | Method for production of nanoelectronic and nanomechanical instruments | |
| Beck et al. | Ultrahigh vacuum instrument that combines variable-temperature scanning tunneling microscopy with Fourier transform infrared reflection-absorption spectroscopy for studies of chemical reactions at surfaces | |
| Harrell et al. | An ultrahigh vacuum cryogenic scanning tunneling microscope with tip and sample exchange |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |