CN104777193B - Transport property measurement apparatus in situ - Google Patents
Transport property measurement apparatus in situ Download PDFInfo
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- CN104777193B CN104777193B CN201510172191.4A CN201510172191A CN104777193B CN 104777193 B CN104777193 B CN 104777193B CN 201510172191 A CN201510172191 A CN 201510172191A CN 104777193 B CN104777193 B CN 104777193B
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Abstract
A kind of transport property measurement apparatus in situ, including：One low-dimensional materials preparation system, for preparing membrane structure；And a transport property measuring system, the transport property for measuring the membrane structure；The transport property measurement apparatus in situ further comprises a low-dimensional materials processing system, for setting electrode on the surface of the membrane structure；Transmitted between the low-dimensional materials preparation system, low-dimensional materials processing system and transport property measuring system by magnetic rod in the membrane structure, and the low-dimensional materials preparation system, low-dimensional materials processing system, transport property measuring system and be vacuum environment.
Description
Technical field
The present invention relates to a kind of transport property measurement apparatus in situ.
Background technology
Low-dimensional quantum material is one of physics research content most abundant field.The two dimension electricity of heterogeneous semiconductor junction interface
Sub- gas, graphene, copper-based and iron-based superconductor, topological insulator, oxide interface and Transition-metal dichalcogenide stratiform
Material etc. belongs to this kind of system.These systems present the most magical quantum state of some in nature, are related to condensed state thing
The main important scientific problems of reason, are the crucial systems for disclosing the sub- related question of forceful electric power that low dimensional physics is most challenged, they are very
It is possible to still result in a class of the technology such as Future Information, clean energy resource, electric power and accurate measurement significant innovation even revolution
System, is current global research emphasis.For the research of this kind of system, the laboratory facilities of precision are not only needed, are more aggravated
Want, due to they can physically refine be reduced to thickness for one to several atomic layers/unit primitive unit cell quasi- two dimension
System, generally can not directly be studied under air ambient, so Material growth in situ, property representation in situ
It is to measure the indispensable technological means of low-dimensional materials with the measurement etc. that transports in situ.
At present, low-dimensional materials transport testing and also predominantly stayed in the measurement of ex situ, i.e., by vacuum environment
The low-dimensional materials of growth take out vacuum system, place into test system and are tested, and test system is with Quantum Design
The product of company is representative, can carry out the measurement under fine low temperature and magnetic field, but ex situ measurement is inevitably
Low-dimensional materials are polluted so that the transport property of measurement is not low-dimensional materials most intrinsic property.
The content of the invention
In view of this, low-dimensional materials will not be polluted it is necessory to provide one kind, low-dimensional materials can be measured most originally
The transport property measurement apparatus in situ for the transport property levied.
A kind of transport property measurement apparatus in situ, including：One low-dimensional materials preparation system, for preparing membrane structure；With
And a transport property measuring system, the transport property for measuring the membrane structure；The transport property measurement apparatus in situ
Further comprise a low-dimensional materials processing system, for setting electrode on the surface of the membrane structure；The low-dimensional materials system
It is standby that the membrane structure, and institute are transmitted by magnetic rod between system, low-dimensional materials processing system and transport property measuring system
State in low-dimensional materials preparation system, low-dimensional materials processing system, transport property measuring system and be vacuum environment.
Compared with prior art, the transport property measurement apparatus in situ that the present invention is provided by low-dimensional materials by preparing system
System, low-dimensional materials processing system and transport property measuring system are connected by magnetic rod, and it is vacuum ring to keep the whole device
Border so that the low-dimensional materials during being prepared into measurement transport property from invariable vacuum environment is in, really
Low-dimensional materials are protected and have not resulted in pollution, low-dimensional materials most intrinsic transport property can be measured.
Brief description of the drawings
Fig. 1 is the structural representation of the stereochemical structure of transport property measurement apparatus in situ.
Fig. 2 is the cross-sectional view of low-dimensional materials preparation system.
Fig. 3 is the structural representation of the stereochemical structure of low-dimensional materials processing system.
Fig. 4 is the stereochemical structure exploded view in low-dimensional materials processing system inside electrode evaporation chamber.
Fig. 5 is delineation processing chamber inside and microscopical dimensional structure diagram in low-dimensional materials processing system.
Fig. 6 is the stereochemical structure decomposing schematic representation of transport property measuring system.
Fig. 7 is the cross-sectional view of transport property measuring system middle probe platform.
Fig. 8 is the flow chart of low-dimensional materials transport property measuring method in situ.
Main element symbol description
| Transport property measurement apparatus in situ | 10 |
| First connecting tube | 20 |
| Second connecting tube | 22 |
| 3rd connecting tube | 24 |
| Low-dimensional materials preparation system | 12 |
| Reaction chamber | 120 |
| Substrate | 122 |
| Low-dimensional materials structure | 124 |
| Evaporation source | 126 |
| Vavuum pump | 128 |
| Vacuum gauge | 130 |
| Fast sample chamber | 132 |
| Magnetic rod | 134 |
| Sample carrier | 136 |
| Cantilever lever | 138 |
| Low-dimensional materials characterize system | 14 |
| Low-dimensional materials processing system | 16 |
| Electrode evaporation source | 160 |
| Electrode deposition unit | 162 |
| Bottom flange | 1620 |
| Support bar | 1622 |
| Supporting table | 1624 |
| First limitting casing | 1626 |
| First opening | 16260 |
| Inclined-plane | 16262 |
| First wall | 16264 |
| Second limitting casing | 1628 |
| Second opening | 16282 |
| First sample carrier socket | 1630 |
| Convex rod | 1632 |
| Magnetic bar | 1634 |
| Pass sample chamber | 164 |
| Delineate processing unit | 166 |
| Push up flange | 1660 |
| Fine motion graver | 1662 |
| Engraving needle | 1664 |
| Second sample carrier socket | 1666 |
| Microscope | 168 |
| Transport property measuring system | 18 |
| Measurement head | 180 |
| Sample stage | 1800 |
| Probe station | 1802 |
| Spacing substrate | 18020 |
| Tubular substrate | 18022 |
| Bottom wall | 18024 |
| Displacement platform | 18026 |
| First displacement body | 18026a |
| Second displacement body | 18026b |
| Piezoelectric ceramics | 18028 |
| Probe array | 18030 |
| First electrode disk | 1804 |
| Measure chamber | 182 |
| Second electrode disk | 1820 |
Following embodiment will further illustrate the present invention with reference to above-mentioned accompanying drawing.
Embodiment
Further is made to the transport property measurement apparatus in situ that the present invention is provided below in conjunction with the accompanying drawings and the specific embodiments
Detailed description.
Fig. 1 is referred to, the present invention provides a kind of transport property measurement apparatus 10 in situ, including a low-dimensional materials preparation system
12nd, a low-dimensional materials characterize system 14, a low-dimensional materials processing system 16 and a transport property measuring system 18.The low-dimensional material
Material preparation system 12 characterizes system 14 by the first connecting tube 20 and low-dimensional materials and is connected, and the low-dimensional materials preparation system 12 leads to
Cross the second connecting tube 22 to be connected with low-dimensional materials processing system 16, the low-dimensional materials processing system 16 passes through the 3rd connecting tube 24
It is connected with transport property measuring system 18.It is appreciated that the first connecting tube 20, the second connecting tube 22, the 3rd connecting tube 24 and
Low-dimensional materials preparation system 12, low-dimensional materials characterize system 14, low-dimensional materials processing system 16 and transport property measuring system 18
Between connected by flange.
The effect of the low-dimensional materials preparation system 12 is to prepare low-dimensional materials, and the low-dimensional materials, which characterize system 14, is pair
Low-dimensional materials pattern and Electronic Structure carry out test analysis, and the low-dimensional materials processing system 16 is the table in low-dimensional materials
Face sets electrode and marks by the electrode miniature carving, and the transport property measuring system 18 is the transport property to the low-dimensional materials
Measure.The low-dimensional materials preparation system 12, low-dimensional materials characterize system 14, low-dimensional materials processing system 16 and transport property
Multiple magnetic rods 134 are set in matter measuring system 18, and the plurality of magnetic rod 134 is in low-dimensional materials preparation system 12, low-dimensional materials
Sample is transmitted between sign system 14, low-dimensional materials processing system 16 and transport property measuring system 18.The transport property in situ
Matter measurement apparatus 10 is vacuum environment, and multiple magnetic rods 134 characterize system in low-dimensional materials preparation system 12, low-dimensional materials
14th, vacuum environment is also kept during sample is transmitted between low-dimensional materials processing system 16 and transport property measuring system 18.
The vacuum environment can vacuumize realization by vavuum pump 128.It is appreciated that the low-dimensional materials preparation system 12, low-dimensional
A connecting tube and method can be passed through between material characterization system 14, low-dimensional materials processing system 16 and transport property measuring system 18
Orchid is realized to be connected two-by-two, and this four systems can freely transmit sample by the magnetic rod 134.
The present invention only illustrates the set-up mode of magnetic rod 134, low-dimensional materials by taking low-dimensional materials preparation system 12 as an example
Sign system 14, low-dimensional materials processing system 16 are similar with the mode of setting magnetic rod 134 in transport property measuring system 18, this
In repeat no more.
Fig. 2 is referred to, the low-dimensional materials preparation system 12 includes a reaction chamber 120, a cantilever lever 138, an evaporation source
126th, a vavuum pump 128, a magnetic rod 134 and a fast sample chamber 132.The low-dimensional materials preparation system 12 is being used
When, also including a substrate 122.The cantilever lever 138 has opposite end, and the inwall of reaction chamber 120 is fixed in one end, and the other end is used
In the fixed substrate 122.The multiple evaporation source 126 is connected with reaction chamber 120, and is spaced just to substrate 122.Specifically
Ground, the substrate 122 has relative upper and lower surface, and the upper surface of substrate 122 is connected to by the cantilever lever 138
The upper side wall of reaction chamber 120.The multiple evaporation source 126 is spaced the lower surface just to substrate 122.The vavuum pump 128 and institute
State reaction chamber 120 to connect so that be vacuum environment in reaction chamber 120.One end of the magnetic rod 134 is provided with sample carrier 136
And stretch into the reaction chamber 120, the other end of the magnetic rod 134 stays in the outside of reaction chamber 120, with the convenient to operate magnetic rod
134 so that the magnetic rod 134 can drive sample carrier 136 to move or the sample carrier 136 is rotated around magnetic rod 134.Institute
State fast sample chamber 132 to be connected with reaction chamber 120, be easy to that substrate 122 is put into reaction chamber 120 before reaction, and consolidated
Due to the cantilever lever 138.
Further, the low-dimensional materials preparation system 12 can also include a vacuum gauge 130, the vacuum gauge 130 with it is described
Reaction chamber 120 is connected, the vacuum for measuring reaction chamber 120.Moreover, the low-dimensional materials preparation system 12 can also set one
Visual window（Do not draw）, to observe the preparation of low-dimensional materials.The low-dimensional materials preparation system 12 further comprises an opening
（Do not draw）, in order to which the low-dimensional materials preparation system 12 is connected with first connecting tube 20 by flange.The evaporation source
126th, vavuum pump 128, vacuum gauge 130 and magnetic rod 134 are flange connection with the connection of reaction chamber 120.In the present embodiment, institute
Low-dimensional materials preparation system 12 is stated for molecular beam epitaxy（MBE）Growing system.
After the low-dimensional materials are prepared in low-dimensional materials preparation system 12, low-dimensional material is sent to by the magnetic rod 134
Expect in sign system 14, after the test analysis for carrying out low-dimensional materials pattern and Electronic Structure, then pass through the magnetic force again
Bar 134, characterizes system 14 by low-dimensional materials and is sent to low-dimensional materials processing system 16.It is vacuum that the low-dimensional materials, which characterize system 14,
Environment.The species that the low-dimensional materials characterize system 14 is not limited, as long as the environment characterized is vacuum.In the present embodiment, institute
It is PSTM to state low-dimensional materials and characterize system 14（STM）168.It is appreciated that the low-dimensional materials characterize system 14
For optional system, it is convenient to omit.
Fig. 3 and Fig. 4 are referred to, it is single that the low-dimensional materials processing system 16 includes an electrode evaporation source 160, electrode evaporation
Member 162, one passes sample chamber 164, one and delineates the microscope 168 of processing unit 166 and one.The electrode deposition unit 162 includes an electricity
Pole is deposited with chamber, and electrode evaporation chamber has relative two ends, and one end is connected to the biography sample chamber 164, the other end and the electrode
Evaporation source 160 is connected.The delineation processing unit 166 includes a delineation processing chamber, and the delineation processing chamber has one end, this one end
It is connected to the biography sample chamber 164.The delineation processing chamber has an observation window（Figure is not regarded）, the microscope 168 is located at described
The outside of processing chamber is delineated, the delineation for delineating processing chamber internal electrode measured zone can be observed by the observation window.Preferably,
The microscope 168 is located at the bottom outside of delineation processing chamber.The electrode evaporation chamber, biography sample chamber 164 and delineation processing chamber are equal
, can be by vacuumizing realization for vacuum environment.The connection refers both to flange connection.
The electrode deposition unit 162 further comprises a bottom flange 1620, at least two support bars 1622, a supporting table
1624th, one first limitting casing 1626, one second limitting casing 1628, one first sample carrier socket 1630 and a magnetic bar 1634.Institute
State bottom flange 1620 and be connected with the bottom that the electrode is deposited with chamber, to close the bottom that the electrode is deposited with chamber, the electrode steams
Rise 160 by the bottom flange 1620 be connected to the electrode be deposited with chamber.At least two support bar 1622, supporting table 1624,
First limitting casing 1626, the second limitting casing 1628, the first sample carrier socket 1630 and magnetic bar 1634 may be contained within electrode steaming
Plate the inside of chamber.
The supporting table 1624 is connected on the bottom flange 1620 by least two support bars 1622.The supporting table
1624 have a first through hole, a mask tiling be arranged in the first through hole of the supporting table 1624, the lower surface of the mask with
The electrode evaporation source 160 is just right.
First limitting casing 1626, the second limitting casing 1628 and the first sample carrier socket 1630 are arranged at the supporting table
On 1624.The first sample carrier socket 1630 has two relative convex rods 1632, the work of the first sample carrier socket 1630
With being the fixed sample carrier 136, the low-dimensional materials are further fixed.Second limitting casing 1628 has relative two
There is one second opening 16282 respectively on side wall, two relative side walls.Second opening 16282 has relative two
With the side of horizontal plane.The first sample carrier socket 1630 is arranged at the inframe of second limitting casing 1628, and institute
Two convex rods 1632 are stated respectively at the described two second openings 16282 to extend.The outside of second limitting casing 1628 is arranged
First limitting casing 1626, first limitting casing 1626 has on two relative side walls, two relative side walls respectively
With one first opening 16260, first opening 16260 have one with the horizontal an angle inclined-plane 16262, it is and described
Two convex rods 1632 each extend over out two first openings 16260.That is, to be set in second spacing for the first limitting casing 1626
The outside of frame 1628, the first sample carrier socket 1630 is located at the inframe of the second limitting casing 1628, and the first sample carrier socket 1630
On two convex rods 1,632 16282 extend through the described first opening 16260 and the second opening to outer frame.
The magnetic bar 1634 and the electrode evaporation chamber are connected, and with the first wall in first limitting casing 1626
16264 intervals or directly contact, first wall 16264 is adjacent with the side wall for being provided with the first opening 16260, and this first
Wall 16264 is close to the inclined-plane 16262.When the magnetic bar 1634 pushes away the first wall 16264 of the first limitting casing 1626, described
One sample carrier socket 1630 due to described first opening 16260 in inclined-plane 16262 and it is described second opening 16282 restriction and to
Upper movement；When recalling the magnetic bar 1634, when making magnetic bar 1634 away from first limitting casing 1626, first sample carrier
Socket 1630 is moved down under gravity.That is, described first sample carrier socket 1630 is under gravity to mask
Be located proximate to.
Fig. 5 is referred to, the delineation processing unit 166 further comprises a top flange 1660, a fine motion graver 1662
With one second sample carrier socket 1666.The delineation processing chamber is connected by the top flange 1660 with the biography sample chamber 164.Institute
The sample carrier socket 1666 of fine motion graver 1662 and second is stated inside the delineation processing chamber, and is individually fixed in the top method
On orchid 1660.The effect of the second sample carrier socket is the fixed sample carrier 136, so that the fixed low-dimensional materials.Institute
Fine motion graver 1662 is stated with an engraving needle 1664, the fine motion graver 1662 can be driven by piezoelectric ceramics 18028, in institute
Under the observation for stating microscope 168, the delineation of electrode measurement region is isolated using engraving needle 1664.
Fig. 6 and Fig. 7 are referred to, the transport property measuring system 18 includes a measurement head 180 and a measurement chamber 182, institute
State measurement head 180 to overlap including a sample stage 1800, a probe station 1802 and a first electrode disk 1804, the probe station
1802 are located between the sample stage 1800 and the first electrode disk 1804.Bottom inside the measurement chamber 182 has one
Second electrode disk 1820, the first electrode disk 1804 and second electrode disk 1820 have one-to-one electrode.The measurement
Chamber 182 is vacuum environment and is low temperature environment, it is preferable that the measurement chamber 182 is vacuum and extremely low temperature strong magnetic field circumstance.This reality
Apply in example, the measurement chamber 182 is extremely low temperature high-intensity magnetic field Dewar.The sample stage 1800, probe station 1802 and first electrode disk
1804 methods being set together are not limited, in the present embodiment, the sample stage 1800, probe station 1802 and first electrode disk 1804
Pass through support column and screw（It is not shown）It is fixed together.
The sample stage 1800 can fix the sample carrier 136, and the sample carrier 136 is used to clamp sample.The sample
Product are the low-dimensional materials structure 124 being arranged in substrate 122, and the surface of the remote substrate 122 of low-dimensional materials structure 124 is provided with
Electrode, and electrode is in a miniature carving partition.The low-dimensional materials structure 124 is zero dimension, one-dimensional or two-dimensional structure.
The probe station 1802 includes a spacing substrate 18020, a tubular substrate 18022 and a displacement platform 18026.It is described
Being shaped as displacement platform 18026 is T-shaped, specifically, and the displacement platform 18026 is by one first displacement body 18026a and a second displacement body
18026b is constituted, and second displacement body 18026b has relative two ends, the centre and second of the first displacement body 18026a
Displacement body 18026b one end connection, T-shaped to be formed, the other end of the second displacement body 18026b sets a probe array
18030.Preferably, the centre of the first displacement body 18026a is connected with being integrally formed with second displacement body 18026b one end
Integrally.The bottom wall 18024 of the tubular substrate 18022 has a fourth hole, and the second displacement body 18026b, which is set, to be visited
One end of pin array 18030 is stretched into inside tubular substrate 18022 through the fourth hole, and first displacement body 18026a
In the outside of the bottom wall 18024 of tubular substrate 18022.The spacing substrate 18020 is located at the first displacement body 18026a away from cylinder
The side of shape substrate 18022, and with the first displacement body 18026a interval settings.The spacing substrate 18020 is close to first
Move surfaces of the body 18026a away from tubular substrate 18022.The spacing substrate 18020 is close to the first displacement body 18026a surface
With the bottom wall 18024 of the tubular substrate 18022 multiple piezoelectric ceramics are respectively provided with close to the first displacement body 18026a surface
18028, the plurality of piezoelectric ceramics 18028 can be with drive displacement platform 18026 along the axis direction perpendicular to tubular substrate 18022
It is mobile.Multiple piezoelectric ceramics 18028 are set on the madial wall of the tubular substrate 18022, and the plurality of piezoelectric ceramics 18028 can be with
Axis direction of the drive displacement platform 18026 along tubular substrate 18022 is moved.The probe array 18030 is with displacement platform
18026 movement and move, so as to the electrode contact with the miniature carving partition, that is, realize that probe array 18030 is electrically connected with electrode
Connect.The probe array 18030 is made up of four probes.
Fig. 8 is referred to, the present invention further provides a kind of low-dimensional materials transport property measuring method in situ, including following step
Suddenly：
Under S1, vacuum environment, a low-dimensional materials structure 124 is prepared in a substrate 122；
Under S2, vacuum environment, one electrode is set in part surface of the low-dimensional materials structure 124 away from substrate 122；
Under S3, vacuum environment, a micro- scored area, and the electrode are depicted in the low-dimensional materials structure 124
In micro- scored area；
Under S4, vacuum environment, a probe array 18030 is contacted into the electrode, the measurement of transport property is carried out.
In step S1, the material of the substrate 122 is not limited, and can be STO（Strontium titanates SrTiO3）.Heating evaporation source 126
It is evaporated on the lower surface for the substrate 122 being vacantly arranged in the low-dimensional materials preparation system 12, prepare a low-dimensional material
Expect structure 124.The evaporation source 126 is Fe（Iron）Source, Se（Selenium）Source, In（Indium）Source etc., the vacuum and temperature are according to reality
Border needs to be adjusted.The low-dimensional materials structure 124 can be zero dimension, one-dimensional or two-dimensional structure, such as particle, line or film,
The low-dimensional materials structure 124 can be superconducting thin film etc..In the present embodiment, the substrate 122 is 2 × 10 millimeters of STO, described
Low-dimensional materials structure 124 is FeSe films, and the thickness of the FeSe films is several nanometers, and the evaporation source 126 is Fe sources and Se sources,
The temperature in Fe sources is about 1000 DEG C, and the temperature in Se sources is about 150 DEG C, and vacuum is about 1 × 10-9torr（Support）.Wherein, the base
Bottom 122 and the first sample of formation of low-dimensional materials structure 124.
In step S2, in part surface setting one electrode of the low-dimensional materials structure 124 away from substrate 122, including with
Lower step：
S21, when pushing away the first wall 16264 of the first limitting casing 1626 by magnetic bar 1634, the first sample carrier socket
1630 are moved up due to the restriction of inclined-plane 16262 and second opening 16282 in the described first opening 16260, are left
2 millimeters of mask；
S22, the low-dimensional materials are sent to using magnetic rod 134 by first sample by low-dimensional materials preparation system 12
The first sample carrier socket 1630 in processing system 16 in electrode evaporation chamber, specifically, first sample is pressed from both sides by sample carrier 136
Hold, and follow sample carrier 136 to be sent to electrode in low-dimensional materials processing system 16 by magnetic rod 134 and be deposited with the first sample in chamber
Hold in the palm on socket 1630；
S23, gradually loosens magnetic bar 1634, makes magnetic bar 1634 away from first limitting casing 1626, first sample
Product support socket 1630 is moved down under gravity, i.e. the first sample carrier socket 1630 under gravity gradually with
Mask is close so that in the first sample part surface and mask of the low-dimensional materials structure 124 away from substrate 122 move closer to until
Contact；
Electrode evaporation is arrived low-dimensional materials structure 124 away from substrate by S24, heating electrode evaporation source 160 by the mask
122 part surface.In the present embodiment, the electrode evaporation source 160 is gold, and heating-up temperature is 1000 degree, and evaporation time is 30
Minute, vacuum is vacuum 10-8torr。
In step S3, a micro- scored area is depicted on the surface of the low-dimensional materials structure 124 away from substrate 122, and
And the detailed process that the electrode is located in micro- scored area is：Using magnetic rod 134 by first sample by the electricity
Pole evaporation chamber is through passing on the second sample carrier socket 1666 that sample chamber 164 is sent in delineation processing chamber, in the sight of microscope 168
Under survey, driving fine motion graver 1662 makes the engraving needle 1664 on fine motion graver 1662 in low-dimensional materials structure 124 away from base
The low-dimensional materials structure 124 is delineated on the surface at bottom 122, and a micro- scored area, and the electricity are delineated in low-dimensional materials structure 124
Pole is located in micro- scored area.The shape of micro- scored area is not limited, in the present embodiment, and micro- scored area is 100
Micron is multiplied by 100 microns of square.
In step S4, the first sample that processing is drawn by miniature carving is sent in the transport property measuring system 18, made
The observation of electrode in micro- scored area and the probe array 18030 in the measurement head 180 in a long focusing microscope 168
It is lower first to dock, probe array 18030 is slightly removed electrode, then electrode and the entirety of probe array 18030 are sent into institute
State in measurement chamber 182, the probe array 18030 is contacted the electrode, carry out the measurement of transport property.Specific steps
It is：
Step S41, the first sample that processing is drawn in the process miniature carving is fixed by sample carrier 136, and is transmitted by magnetic rod 134
On sample stage 1800 into the transport property measuring system 18, the sample stage 1800 has a through hole, the first sample quilt
It is fixed in the through hole, also, the surface of the low-dimensional materials structure 124 away from substrate 122 is on the probe station 1802
Probe array 18030；
Step S42, the spacing substrate 18020 and tubular substrate are driven using multigroup piezoelectric ceramics 18028
18022 so that the displacement platform 18026 is along the axis direction perpendicular to tubular substrate 18022 and parallel to tubular substrate
18022 axis direction movement, the probe array 18030 is moved with the movement of displacement platform 18026 so that probe array
18030 dock with the electrode in micro- scored area, and this process can be in a long focusing microscope 168（Figure is not regarded）Lower observation
Carry out, it is ensured that what probe array 18030 was docked with electrode is smoothed out；
Step S43, drives the spacing substrate 18020 using multigroup piezoelectric ceramics 18028, makes displacement platform 18026
Slightly moved away from the direction of sample stage 1800, probe array 18030 slightly removes electrode in company with displacement platform 18026；
Step S44, overall be sent to of sample stage 1800 and probe station 1802 is measured in chamber 182, make using magnetic rod 134
Electrode on the first electrode disk 1804 is docked with the electrode on second electrode disk 1820 in measurement chamber 182；
Step S45, slightly traveling probe array 18030, make probe array 18030 and the electrode in micro- scored area
Dock again, that is, make probe array 18030 and the electrode in micro- scored area on surface of the low-dimensional materials away from substrate 122
Electrical connection, carries out the measurement of transport property.
It is described probe array 18030 is slightly removed electrode, then by electrode and probe array 18030 it is overall be sent to it is described
Measure in chamber 182, finally make the purpose that the probe array 18030 contacts the electrode progress transport property measurement be：Make sample
Sample platform 1800 and the entirety of probe station 1802 will not damage probe when being sent in the not visible measurement chamber 182 of vacuum.It is described can not
Regard and refer to measurement chamber 182 as closed opaque structure, be sent to when by sample stage 1800 and the entirety of probe station 1802 and measure chamber 182
When interior, operator can't see the situation inside measurement chamber 182.
It is appreciated that one electrode can be set in whole surface of the low-dimensional materials structure 124 away from substrate 122, this
When, a probe array 18030 directly can be contacted into the electrode, transported without delineating the low-dimensional materials structure 124
The measurement of property.
Low-dimensional materials transport property measuring method in situ further comprises that one is remote in the low-dimensional materials structure 124
The part surface of substrate 122 is set before electrode, and the pattern and Electronic Structure of the low-dimensional materials structure 124 are tested
Analysis.Detailed process is：After the low-dimensional materials are prepared in low-dimensional materials preparation system 12, it is sent to by magnetic rod 134 low
Tie up in material characterization system 14, carry out the test analysis of low-dimensional materials pattern and Electronic Structure.It is appreciated that the step for
For optional step.
The transport property measurement apparatus 10 in situ that the present invention is provided has advantages below：Firstth, the original position that the present invention is provided
Transport property measurement apparatus 10 by low-dimensional materials preparation system 12, low-dimensional materials processing system 16 and transport property by measuring system
System 18 is connected by magnetic rod 134, and it is vacuum environment to keep the whole device so that the low-dimensional materials are from being prepared into measurement
It is in invariable vacuum environment, it is ensured that low-dimensional materials do not result in pollution, can surveys during transport property
Low-dimensional materials most intrinsic transport property；Secondth, described electrode is deposited with the setting of chamber 162, can be in low-dimensional materials away from base
The surface electrode evaporation at bottom 122, and then measure by way of electrode is contacted with probe array 18030 transport property of low-dimensional materials
Matter, compared with directly contacting low-dimensional materials measurement transport property using probe in the prior art, passes through electrode and probe array
The mode of 18030 contacts measures the transport property of low-dimensional materials, can not only avoid low-dimensional materials from being broken by probe array 18030
It is bad, and electrode is good with effect that probe array 18030 makes electrical contact with, can improve the sensitivity of transport property measurement；3rd, institute
State the first sample carrier socket 1630, the second limitting casing 1628, the first limitting casing 1626 and magnetic bar 1634 in electrode evaporation chamber 162
Set-up mode so that will not destroy low-dimensional materials in surface electrode evaporation of the low-dimensional materials away from substrate 122；4th, institute
State the setting of delineation processing chamber 166 so that the low-dimensional materials, first will be micro- residing for electrode before transport property measurement is carried out
Scored area depict come, also will micro- scored area isolate with the other parts of low-dimensional materials, the miniature carving partition can be made
The measurement of the transport property of the low-dimensional materials in domain is interference-free, improves the degree of accuracy of transport property measurement；5th, the sample stage
1800 and the setting of probe station 1802, when the low-dimensional materials is transferred into measurement chamber 182, probe array 18030 will not be broken
Bad low-dimensional materials；6th, the measurement head 180, the setting of measurement chamber 182, can make the measurement of low-dimensional materials transport property exist
Carried out under extremely low temperature high-intensity magnetic field, expand the research field of low-dimensional materials.
In addition, those skilled in the art can also do other changes in spirit of the invention, certainly, these are according to present invention essence
The change that god is done, should all be included within scope of the present invention.
Claims (9)
1. a kind of transport property measurement apparatus in situ, including：
One low-dimensional materials preparation system, for preparing membrane structure；And
One transport property measuring system, the transport property for measuring the membrane structure；
Characterized in that, the transport property measurement apparatus in situ further comprises a low-dimensional materials processing system, in institute
The surface for stating membrane structure sets electrode；The low-dimensional materials preparation system, low-dimensional materials processing system and transport property measurement
The membrane structure is transmitted by magnetic rod between system, and it is the low-dimensional materials preparation system, low-dimensional materials processing system, defeated
Vacuum environment is in fortune property measurement system；The low-dimensional materials processing system includes an electrode evaporation source, an electrode and is deposited with
Chamber, one pass sample chamber, a delineation processing chamber and a microscope, and the biography sample chamber is deposited with chamber with electrode respectively and delineation processing chamber connects
Connect, the electrode evaporation source is connected to the bottom that electrode is deposited with chamber by a bottom flange, the microscope is located at the delineation
Manage the outside of chamber；The low-dimensional materials preparation system is connected by one second connecting tube with the low-dimensional materials processing system, institute
State low-dimensional materials processing system to be connected with transport property measuring system by one the 3rd connecting tube, second connecting tube, the 3rd
Connected between connecting tube and low-dimensional materials preparation system, low-dimensional materials processing system and transport property measuring system by flange
Connect.
2. original position transport property measurement apparatus as claimed in claim 1 a, it is characterised in that supporting table is steamed positioned at the electrode
Plate inside chamber, and the electrode is connected to by least two support bars and be deposited with the bottom flange of chamber, the supporting table has one the
One through hole a, mask is arranged in the first through hole of the supporting table, and just right with the electrode evaporation source.
3. original position transport property measurement apparatus as claimed in claim 2, it is characterised in that enter one inside the electrode evaporation chamber
Step sets a sample carrier socket, one first limitting casing, one second limitting casing and a magnetic bar, the sample carrier socket, the first limit
Position frame and the second limitting casing are located in the supporting table；The sample carrier socket has two relative convex rods；First limit
Position frame has has one first opening respectively on two relative side walls, two relative side walls of first limitting casing；Described
Two limitting casings have has one second opening respectively on two relative side walls, two relative side walls of second limitting casing；Institute
The outside that the first limitting casing is set in the second limitting casing is stated, the sample carrier socket is located at the inframe of the second limitting casing, and sample
Two convex rods on socket are ask to be open through described first and the second opening extension；The magnetic bar is located to be had with the first limitting casing
There is the adjacent side wall of the side wall of the first opening.
4. original position transport property measurement apparatus as claimed in claim 3, it is characterised in that second opening has relative
Two with the side of horizontal plane, and first opening is with an inclined-plane with the horizontal an angle.
5. original position transport property measurement apparatus as claimed in claim 1, it is characterised in that the delineation processing chamber passes through a top
Flange is connected with the biography sample chamber, and fine motion graver and a sample carrier socket with an engraving needle are located in the delineation processing chamber
Portion, and be individually fixed on the top flange.
6. original position transport property measurement apparatus as claimed in claim 1, it is characterised in that the transport property measuring system bag
A measurement head and a measurement chamber are included, the measurement head includes sample stage, the probe station and one first for being used to fix a sample carrier
Electrode disk is overlapped, and the probe station is located between the sample stage and first electrode disk, the bottom inside the measurement chamber
With a second electrode disk, the first electrode disk and second electrode disk have one-to-one electrode.
7. original position transport property measurement apparatus as claimed in claim 6, it is characterised in that the measurement chamber is vacuum environment.
8. original position transport property measurement apparatus as claimed in claim 6, it is characterised in that the probe station includes a spacing base
Bottom, a tubular substrate and one are provided with the displacement platform of probe array, and the spacing substrate and tubular substrate are used to make the displacement
Platform is moved so that the probe array movement.
9. original position transport property measurement apparatus as claimed in claim 8, it is characterised in that the displacement platform is by one first displacement
Body and second displacement body composition, the second displacement body have relative two ends, the centre of first displacement body and second
One end connection of body is moved, forms T-shaped, the other end of the second displacement body sets the probe array.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510172191.4A CN104777193B (en) | 2015-04-13 | 2015-04-13 | Transport property measurement apparatus in situ |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510172191.4A CN104777193B (en) | 2015-04-13 | 2015-04-13 | Transport property measurement apparatus in situ |
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| CN104777193B true CN104777193B (en) | 2017-07-18 |
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| CN107525846B (en) * | 2017-10-11 | 2024-06-21 | 北京大学 | Ultrahigh vacuum compatible low-temperature strong magnetic field in-situ transportation device |
| CN108504992B (en) * | 2018-06-12 | 2023-10-03 | 清华大学 | Electrode vapor deposition device |
| CN112697842B (en) * | 2019-01-30 | 2021-09-10 | 南通大学 | ASIC for measuring fA-pA magnitude weak current |
| CN113327866B (en) * | 2020-02-28 | 2022-09-20 | 复旦大学 | Vacuum preparation system and method for two-dimensional device |
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| US6140833A (en) * | 1998-11-16 | 2000-10-31 | Siemens Aktiengesellschaft | In-situ measurement method and apparatus for semiconductor processing |
| CN2837831Y (en) * | 2005-11-11 | 2006-11-15 | 中国科学院物理研究所 | Ultra-high vacuum in-situ growth, characterization and test system |
| CN101545871A (en) * | 2009-05-15 | 2009-09-30 | 北京工业大学 | Microstructure of nano wire and electrical performance testing device |
| CN101924202B (en) * | 2010-09-08 | 2012-09-05 | 武汉理工大学 | Single nanowire electrochemical device and assembly and in-situ characterization method thereof |
| CN103792443B (en) * | 2012-11-01 | 2016-09-28 | 国家纳米科学中心 | Probe station, preparation and the integrated system and method for test of organic film device |
| CN103399044B (en) * | 2013-07-29 | 2015-11-18 | 吉林大学 | The apparatus and method of in-situ test conductive species transport property under High Temperature High Pressure |
| CN204718982U (en) * | 2015-04-13 | 2015-10-21 | 清华大学 | Original position transport property measurement mechanism |
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