CN104749325B - Transport property measuring method in situ - Google Patents
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Abstract
一种原位输运性质测量方法，包括以下步骤：一第一真空环境中，在一基底上制备一膜状结构；一第二真空环境中，在该膜状结构远离基底的表面设置一电极，并在所述膜状结构远离基底的表面上进行微刻划处理，刻划出一微刻划区域，所述电极位于该微刻划区域内；以及一第三真空环境中，将一探针阵列接触所述电极，进行输运性质的测量；所述第一真空环境、第二真空环境、第三真空环境为一连续的真空环境，该连续的真空环境是指所述膜状结构从第一真空环境直接进入第二真空环境，并从第二真空环境直接进入第三真空环境，该膜状结构没有与空气接触。本发明还涉及一种原位输运性质测量装置。
A method for measuring in-situ transport properties, comprising the following steps: in a first vacuum environment, preparing a membranous structure on a substrate; in a second vacuum environment, setting an electrode on the surface of the membranous structure away from the substrate , and carry out micro-scribing treatment on the surface of the film-like structure far away from the substrate, and mark a micro-scribing area, and the electrode is located in the micro-scribing area; and in a third vacuum environment, a probe The needle array contacts the electrodes to measure the transport property; the first vacuum environment, the second vacuum environment, and the third vacuum environment are a continuous vacuum environment, and the continuous vacuum environment means that the film-like structure starts from The first vacuum environment directly enters the second vacuum environment, and from the second vacuum environment directly enters the third vacuum environment, and the membrane-like structure is not in contact with air. The invention also relates to an in-situ transport property measuring device.
Description
技术领域 technical field
本发明涉及一种原位输运性质测量方法。 The invention relates to a method for measuring in-situ transport properties.
背景技术 Background technique
低维量子物质是物理学研究内容最丰富的领域之一。半导体异质结界面的二维电子气、石墨烯、铜基和铁基超导体、拓扑绝缘体、氧化物界面以及过渡金属硫族化合物层状材料等等都属于这类体系。这些体系展现了自然界中一些最神奇的量子态，涉及凝聚态物理主要的重大科学问题，是揭示低维物理最具挑战的强电子关联问题的关键体系，它们很有可能还是导致未来信息、清洁能源、电力和精密测量等技术重大革新甚至是革命的一类体系，是目前全世界的研究重点。对于这类体系的研究，不但需要精密的实验手段，更加重要的是，由于它们均可以从物理上提炼简化为厚度为一到几个原子层/单位原胞的准二维体系，一般情况下无法在空气环境下直接进行研究，所以原位的材料生长、原位的性质表征和原位的输运测量等是测量低维材料不可或缺的技术手段。 Low-dimensional quantum matter is one of the richest research areas in physics. Two-dimensional electron gas at the semiconductor heterojunction interface, graphene, copper-based and iron-based superconductors, topological insulators, oxide interfaces, and transition metal chalcogenide layered materials all belong to this type of system. These systems show some of the most amazing quantum states in nature, involving major scientific issues in condensed matter physics, and are the key systems to reveal the most challenging problem of strong electron correlation in low-dimensional physics. They are likely to lead to future information, clean A type of system that has undergone major technological innovations or even revolutions such as energy, electric power, and precision measurement is currently the research focus of the world. The study of such systems not only requires precise experimental means, but more importantly, since they can be physically refined and simplified into quasi-two-dimensional systems with a thickness of one to several atomic layers per unit cell, in general It is impossible to conduct research directly in the air environment, so in-situ material growth, in-situ property characterization, and in-situ transport measurement are indispensable technical means for measuring low-dimensional materials.
目前，对低维材料进行输运测试还主要停留在非原位的测量上，即将真空环境内生长的低维材料拿出真空系统，再放入测试系统上进行测试，测试系统以Quantum Design公司的产品为代表，能够进行精细的低温和磁场下的测量，但是非原位测量不可避免的会对低维材料造成污染，使得测量的输运性质不是低维材料最本征的性质。 At present, the transportation test of low-dimensional materials still mainly stays in the ex-situ measurement, that is, the low-dimensional materials grown in the vacuum environment are taken out of the vacuum system, and then put into the test system for testing. The test system uses Quantum Design's products are representative, which can perform fine low-temperature and magnetic field measurements, but ex-situ measurement will inevitably pollute low-dimensional materials, making the measured transport properties not the most intrinsic properties of low-dimensional materials.
另外，现有技术中一般利用探针直接接触低维材料进行输运性质的测量，低维材料的结构难免被探针破坏，进而影响输运性质测量的准确度。 In addition, in the prior art, probes are generally used to directly contact low-dimensional materials to measure transport properties, and the structure of low-dimensional materials will inevitably be damaged by the probes, thereby affecting the accuracy of transport property measurements.
发明内容 Contents of the invention
有鉴于此，确有必要提供一种不会对低维材料造成污染及破坏，可以测得低维材料最本征的输运性质的原位输运性质测量方法。 In view of this, it is indeed necessary to provide an in-situ transport property measurement method that can measure the most intrinsic transport properties of low-dimensional materials without causing pollution and damage to low-dimensional materials.
一种原位输运性质测量方法，包括以下步骤：一第一真空环境中，在一基底上制备一膜状结构；一第二真空环境中，在该膜状结构远离基底的表面设置一电极，并在所述膜状结构远离基底的表面上进行微刻划处理，刻划出一微刻划区域，所述电极位于该微刻划区域内；以及一第三真空环境中，将一探针阵列接触所述电极，测量该膜状结构的输运性质，其中，所述第一真空环境、第二真空环境、第三真空环境为一连续的真空环境。 A method for measuring in-situ transport properties, comprising the following steps: in a first vacuum environment, preparing a membranous structure on a substrate; in a second vacuum environment, setting an electrode on the surface of the membranous structure away from the substrate , and carry out micro-scribing treatment on the surface of the film-like structure far away from the substrate, and mark a micro-scribing area, and the electrode is located in the micro-scribing area; and in a third vacuum environment, a probe The needle array contacts the electrodes to measure the transport properties of the film structure, wherein the first vacuum environment, the second vacuum environment and the third vacuum environment are a continuous vacuum environment.
一种原位输运性质测量方法，包括以下步骤：提供一低维材料制备系统，用于制备一膜状结构；提供一低维材料处理系统，用于在所述膜状结构的表面设置电极，并且刻划该膜状结构，使电极处于一微刻划区域内；以及提供一输运性质测量系统，用于测量所述膜状结构的输运性质；所述低维材料制备系统与低维材料处理系统通过磁力杆连接，所述低维材料处理系统和输运性质测量系统通过磁力杆连接，且所述低维材料制备系统、低维材料处理系统、输运性质测量系统和磁力杆中为一连续的真空环境。 A method for measuring in-situ transport properties, comprising the following steps: providing a low-dimensional material preparation system for preparing a film-like structure; providing a low-dimensional material processing system for arranging electrodes on the surface of the film-like structure , and scribe the membranous structure so that the electrodes are in a micro-recorded area; and provide a transport property measurement system for measuring the transport properties of the membranous structure; the low-dimensional material preparation system and the low-dimensional material preparation system The three-dimensional material processing system is connected by a magnetic rod, the low-dimensional material processing system and the transport property measurement system are connected by a magnetic rod, and the low-dimensional material preparation system, the low-dimensional material processing system, the transport property measurement system and the magnetic rod is a continuous vacuum environment.
与现有技术相比，本发明提供的原位输运性质测量方法，使低维材料从制备到测量该低维材料结构的输运性质的过程中均处于恒定不变的真空环境中，确保了低维材料不会造成污染，可以测得低维材料最本征的输运性质。而且，在低维材料的表面蒸镀电极，通过电极与探针接触的方式测量低维材料的输运性质，不会破坏低维材料的结构。 Compared with the prior art, the in-situ transport property measurement method provided by the present invention keeps the low-dimensional material in a constant vacuum environment from the preparation to the measurement of the transport property of the low-dimensional material structure, ensuring In order to ensure that low-dimensional materials will not cause pollution, the most intrinsic transport properties of low-dimensional materials can be measured. Moreover, the electrodes are evaporated on the surface of the low-dimensional material, and the transport properties of the low-dimensional material are measured by contacting the electrode with the probe, without destroying the structure of the low-dimensional material.
附图说明 Description of drawings
图1为原位输运性质测量装置的立体结构的结构示意图。 FIG. 1 is a schematic structural view of the three-dimensional structure of an in-situ transport property measurement device.
图2为低维材料制备系统的剖面结构示意图。 Fig. 2 is a schematic cross-sectional structure diagram of a low-dimensional material preparation system.
图3为低维材料处理系统的立体结构的结构示意图。 Fig. 3 is a structural schematic diagram of the three-dimensional structure of the low-dimensional material processing system.
图4为低维材料处理系统中电极蒸镀腔内部的立体结构分解图。 Fig. 4 is an exploded view of the three-dimensional structure inside the electrode evaporation chamber in the low-dimensional material processing system.
图5为低维材料处理系统中刻划处理腔内部及显微镜的立体结构示意图。 Fig. 5 is a three-dimensional schematic diagram of the inside of the processing chamber and the microscope in the low-dimensional material processing system.
图6为输运性质测量系统的立体结构分解示意图。 Fig. 6 is an exploded schematic view of the three-dimensional structure of the transport property measurement system.
图7为输运性质测量系统中探针台的剖面结构示意图。 Fig. 7 is a schematic cross-sectional structure diagram of the probe station in the transport property measurement system.
图8为低维材料原位输运性质测量方法的流程图。 Fig. 8 is a flowchart of a method for measuring in-situ transport properties of low-dimensional materials.
主要元件符号说明 Description of main component symbols
如下具体实施方式将结合上述附图进一步说明本发明。 The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.
具体实施方式 detailed description
下面将结合附图及具体实施例对本发明提供的原位输运性质测量方法作进一步的详细说明。 The method for measuring in-situ transport properties provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific examples.
请参见图1，本发明提供一种原位输运性质测量装置10，包括一低维材料制备系统12、一低维材料表征系统14、一低维材料处理系统16和一输运性质测量系统18。所述低维材料制备系统12通过第一连接管20与低维材料表征系统14连接，所述低维材料制备系统12通过第二连接管22与低维材料处理系统16连接，所述低维材料处理系统16通过第三连接管24与输运性质测量系统18连接。可以理解，第一连接管20、第二连接管22、第三连接管24以及低维材料制备系统12、低维材料表征系统14、低维材料处理系统16和输运性质测量系统18之间均通过法兰连接。 Please refer to Fig. 1, the present invention provides an in-situ transport property measurement device 10, including a low-dimensional material preparation system 12, a low-dimensional material characterization system 14, a low-dimensional material processing system 16 and a transport property measurement system 18. The low-dimensional material preparation system 12 is connected to the low-dimensional material characterization system 14 through the first connecting pipe 20, and the low-dimensional material preparation system 12 is connected to the low-dimensional material processing system 16 through the second connecting pipe 22. The material handling system 16 is connected to the transport property measurement system 18 through a third connecting pipe 24 . It can be understood that the connection between the first connecting pipe 20, the second connecting pipe 22, the third connecting pipe 24 and the low-dimensional material preparation system 12, the low-dimensional material characterization system 14, the low-dimensional material processing system 16 and the transport property measurement system 18 are connected by flanges.
所述低维材料制备系统12的作用是制备低维材料，所述低维材料表征系统14是对低维材料形貌和表面电子结构进行测试分析，所述低维材料处理系统16是在低维材料的表面设置电极并将该电极微刻划出来，所述输运性质测量系统18是对该低维材料的输运性质进行测量。所述低维材料制备系统12、低维材料表征系统14、低维材料处理系统16和输运性质测量系统18中设置多个磁力杆134，该多个磁力杆134在低维材料制备系统12、低维材料表征系统14、低维材料处理系统16和输运性质测量系统18之间传递样品。所述原位输运性质测量装置10为真空环境，而且多个磁力杆134在低维材料制备系统12、低维材料表征系统14、低维材料处理系统16和输运性质测量系统18之间传递样品的过程中也保持真空环境。所述真空环境可以通过真空泵128抽真空实现。可以理解，所述低维材料制备系统12、低维材料表征系统14、低维材料处理系统16和输运性质测量系统18之间均可通过一连接管及法兰实现两两相连接，这四个系统可以通过所述磁力杆134自由传递样品。可以理解，所述低维材料制备系统12中的真空环境、低维材料表征系统14中的真空环境、低维材料处理系统16中的真空环境和输运性质测量系统18中的真空环境为一连续的真空环境，该连续的真空环境是指所述样品在低维材料制备系统12、低维材料表征系统14、低维材料处理系统16和输运性质测量系统18直接传递，该样品不会与空气接触。 The function of the low-dimensional material preparation system 12 is to prepare low-dimensional materials, the low-dimensional material characterization system 14 is to test and analyze the morphology and surface electronic structure of low-dimensional materials, and the low-dimensional material processing system 16 is used in low-dimensional materials. An electrode is arranged on the surface of the low-dimensional material and the electrode is micro-marked. The transport property measurement system 18 measures the transport property of the low-dimensional material. The low-dimensional material preparation system 12, the low-dimensional material characterization system 14, the low-dimensional material processing system 16, and the transport property measurement system 18 are provided with multiple magnetic rods 134, and the multiple magnetic rods 134 are placed in the low-dimensional material preparation system 12. , the low-dimensional material characterization system 14 , the low-dimensional material processing system 16 and the transport property measurement system 18 transfer samples. The in-situ transport property measurement device 10 is a vacuum environment, and a plurality of magnetic rods 134 are located between the low-dimensional material preparation system 12, the low-dimensional material characterization system 14, the low-dimensional material processing system 16, and the transport property measurement system 18 Vacuum is also maintained during sample transfer. The vacuum environment can be achieved by vacuuming with a vacuum pump 128 . It can be understood that the two-phase connection between the low-dimensional material preparation system 12, the low-dimensional material characterization system 14, the low-dimensional material processing system 16 and the transport property measurement system 18 can be realized through a connecting pipe and a flange. Four systems can freely transfer samples through the magnetic rod 134 . It can be understood that the vacuum environment in the low-dimensional material preparation system 12, the vacuum environment in the low-dimensional material characterization system 14, the vacuum environment in the low-dimensional material processing system 16 and the vacuum environment in the transport property measurement system 18 are one A continuous vacuum environment, which means that the sample is directly transferred in the low-dimensional material preparation system 12, the low-dimensional material characterization system 14, the low-dimensional material processing system 16 and the transport property measurement system 18, and the sample will not in contact with air.
本发明仅以低维材料制备系统12为例具体说明磁力杆134的设置方式，低维材料表征系统14、低维材料处理系统16和输运性质测量系统18中设置磁力杆134的方式类似，这里不再赘述。 The present invention only takes the low-dimensional material preparation system 12 as an example to specifically illustrate the arrangement of the magnetic rod 134. The method of setting the magnetic rod 134 in the low-dimensional material characterization system 14, the low-dimensional material processing system 16, and the transport property measurement system 18 is similar. I won't go into details here.
请参见图2，所述低维材料制备系统12包括一反应腔120、一悬臂杆138、一蒸发源126、一真空泵128、一磁力杆134以及一快速进样腔132。所述低维材料制备系统12在使用时，还包括一基底122。所述悬臂杆138具有相对两端，一端固定于反应腔120内壁，另一端用于固定所述基底122。所述多个蒸发源126与反应腔120连接，并且间隔正对基底122。具体地，所述基底122具有相对的上表面和下表面，该基底122上表面通过所述悬臂杆138连接于反应腔120的上侧壁。所述多个蒸发源126间隔正对基底122的下表面。所述真空泵128与所述反应腔120连接，使得反应腔120内为真空环境。所述磁力杆134的一端设置有样品托136并伸入所述反应腔120内，所述磁力杆134的另一端留在反应腔120外侧，以便操作该磁力杆134，使得该磁力杆134可以带动样品托136移动或使所述样品托136围绕磁力杆134旋转。所述快速进样腔132与反应腔120连接，便于反应之前将基底122放入反应腔120内，并将其固定于所述悬臂杆138。 Please refer to FIG. 2 , the low-dimensional material preparation system 12 includes a reaction chamber 120 , a cantilever rod 138 , an evaporation source 126 , a vacuum pump 128 , a magnetic rod 134 and a fast sampling chamber 132 . When the low-dimensional material preparation system 12 is in use, it also includes a base 122 . The cantilever rod 138 has two opposite ends, one end is fixed on the inner wall of the reaction chamber 120 , and the other end is used to fix the base 122 . The plurality of evaporation sources 126 are connected to the reaction chamber 120 and spaced to face the substrate 122 . Specifically, the base 122 has opposite upper and lower surfaces, and the upper surface of the base 122 is connected to the upper sidewall of the reaction chamber 120 through the cantilever rod 138 . The plurality of evaporation sources 126 are spaced to face the lower surface of the substrate 122 . The vacuum pump 128 is connected to the reaction chamber 120 so that the reaction chamber 120 is in a vacuum environment. One end of the magnetic rod 134 is provided with a sample holder 136 and extends into the reaction chamber 120, and the other end of the magnetic rod 134 is left outside the reaction chamber 120 so as to operate the magnetic rod 134 so that the magnetic rod 134 can Drive the sample holder 136 to move or make the sample holder 136 rotate around the magnetic rod 134 . The quick sample injection chamber 132 is connected to the reaction chamber 120 , so that the substrate 122 is put into the reaction chamber 120 before the reaction and is fixed on the cantilever rod 138 .
进一步，所述低维材料制备系统12还可以包括一真空规130，该真空规130与所述反应腔120连接，用于测量反应腔120的真空度。而且，该低维材料制备系统12还可以设置一可视窗（未绘制），以便观察低维材料的制备。所述低维材料制备系统12进一步包括一开口（未绘制），以便于该低维材料制备系统12与所述第一连接管20通过法兰连接。所述蒸发源126、真空泵128、真空规130和磁力杆134与反应腔120的连接均为法兰连接。本实施例中，所述低维材料制备系统12为分子束外延（MBE）生长系统。 Further, the low-dimensional material preparation system 12 may also include a vacuum gauge 130 connected to the reaction chamber 120 for measuring the vacuum degree of the reaction chamber 120 . Moreover, the low-dimensional material preparation system 12 can also be provided with a viewing window (not shown), so as to observe the preparation of low-dimensional materials. The low-dimensional material preparation system 12 further includes an opening (not shown), so that the low-dimensional material preparation system 12 is connected to the first connecting pipe 20 through a flange. The evaporation source 126 , vacuum pump 128 , vacuum gauge 130 and magnetic rod 134 are connected to the reaction chamber 120 by flanges. In this embodiment, the low-dimensional material preparation system 12 is a molecular beam epitaxy (MBE) growth system.
所述低维材料在低维材料制备系统12内制备后，由所述磁力杆134传送至低维材料表征系统14内，进行低维材料形貌和表面电子结构的测试分析后，然后再通过所述磁力杆134，由低维材料表征系统14传送至低维材料处理系统16。该低维材料表征系统14为真空环境。所述低维材料表征系统14的种类不限，只要表征的环境为真空即可。本实施例中，所述低维材料表征系统14为扫描隧道显微镜（STM）168。可以理解，所述低维材料表征系统14为可选系统，可以省略。 After the low-dimensional material is prepared in the low-dimensional material preparation system 12, it is transferred to the low-dimensional material characterization system 14 by the magnetic bar 134, and after the test and analysis of the low-dimensional material morphology and surface electronic structure, and then passed The magnetic bar 134 is sent from the low-dimensional material characterization system 14 to the low-dimensional material processing system 16 . The low-dimensional material characterization system 14 is a vacuum environment. The type of the low-dimensional material characterization system 14 is not limited, as long as the characterization environment is vacuum. In this embodiment, the low-dimensional material characterization system 14 is a scanning tunneling microscope (STM) 168 . It can be understood that the low-dimensional material characterization system 14 is an optional system and can be omitted.
请参见图3和图4，所述低维材料处理系统16包括一电极蒸发源160、一电极蒸镀单元162、一传样腔164、一刻划处理单元166和一显微镜168。所述电极蒸镀单元162包括一电极蒸镀腔，该电极蒸镀腔具有相对的两端，一端连接于所述传样腔164，另一端与所述电极蒸发源160连接。所述刻划处理单元166包括一刻划处理腔，该刻划处理腔具有一端，这一端连接于所述传样腔164。所述刻划处理腔具有一观测窗（图未视），所述显微镜168位于所述刻划处理腔的外部，可以通过该观测窗观测刻划处理腔内部电极测量区域的刻划。优选地，所述显微镜168位于刻划处理腔的底部外侧。所述电极蒸镀腔、传样腔164和刻划处理腔均为真空环境，可通过抽真空实现。所述连接均指法兰连接。 Please refer to FIG. 3 and FIG. 4 , the low-dimensional material processing system 16 includes an electrode evaporation source 160 , an electrode evaporation unit 162 , a sample transfer chamber 164 , a scribe processing unit 166 and a microscope 168 . The electrode evaporation unit 162 includes an electrode evaporation chamber, which has two opposite ends, one end is connected to the sample transfer chamber 164 , and the other end is connected to the electrode evaporation source 160 . The scribe processing unit 166 includes a scribe processing chamber, and the scribe processing chamber has one end connected to the sample transfer chamber 164 . The scribe processing chamber has an observation window (not shown in the figure), and the microscope 168 is located outside the scribe process chamber, and the scribe of the electrode measurement area inside the scribe processing chamber can be observed through the observation window. Preferably, the microscope 168 is located outside the bottom of the scribed processing chamber. The electrode evaporation chamber, the sample transfer chamber 164 and the scribe processing chamber are all in a vacuum environment, which can be achieved by vacuuming. Said connections all refer to flange connections.
所述电极蒸镀单元162进一步包括一底法兰1620、至少两个支撑杆1622、一支撑台1624、一第一限位框1626、一第二限位框1628、一第一样品托插座1630和一磁力棒1634。所述底法兰1620与所述电极蒸镀腔的底部连接，以便封闭该电极蒸镀腔的底部，所述电极蒸发源160通过该底法兰1620连接于该电极蒸镀腔。所述至少两个支撑杆1622、支撑台1624、第一限位框1626、第二限位框1628、第一样品托插座1630和磁力棒1634均设置于该电极蒸镀腔的内部。 The electrode evaporation unit 162 further includes a bottom flange 1620, at least two support rods 1622, a support platform 1624, a first limit frame 1626, a second limit frame 1628, a first sample holder socket 1630 and a magnetic bar 1634. The bottom flange 1620 is connected to the bottom of the electrode evaporation chamber so as to close the bottom of the electrode evaporation chamber, and the electrode evaporation source 160 is connected to the electrode evaporation chamber through the bottom flange 1620 . The at least two support rods 1622, support platform 1624, first limit frame 1626, second limit frame 1628, first sample holder socket 1630 and magnetic bar 1634 are all arranged inside the electrode evaporation chamber.
所述支撑台1624通过至少两个支撑杆1622连接于所述底法兰1620上。该支撑台1624具有一第一通孔，一掩模平铺设置于该支撑台1624的第一通孔上，该掩模的下表面与所述电极蒸发源160正对。 The supporting platform 1624 is connected to the bottom flange 1620 through at least two supporting rods 1622 . The supporting platform 1624 has a first through hole, and a mask is laid on the first through hole of the supporting platform 1624 , and the lower surface of the mask is facing the electrode evaporation source 160 .
所述第一限位框1626、第二限位框1628和第一样品托插座1630设置于所述支撑台1624上。所述第一样品托插座1630具有相对的两个凸棒1632，该第一样品托插座1630的作用是固定所述样品托136，进一步固定所述低维材料。所述第二限位框1628具有相对的两个侧壁，该相对的两个侧壁上分别具有一第二开口16282。该第二开口16282具有相对的两个与水平面垂直的侧面。所述第一样品托插座1630设置于所述第二限位框1628内，且所述两个凸棒1632分别从所述两个第二开口16282处向外延伸。所述第二限位框1628的表面被所述第一限位框1626套设，即所述第一限位框1626套设在第二限位框1628的外面。该第一限位框1626具有相对的两个侧壁，该相对的两个侧壁上分别具有一第一开口16260，该第一开口16260具有一与水平面成一角度的斜面16262，并且所述两个凸棒1632分别延伸出两个第一开口16260。也就是说，第一限位框1626套设在第二限位框1628的外面，第一样品托插座1630位于第二限位框1628的框内，且第一样品托插座1630上的两个凸棒1632穿过所述第一开口16260和第二开口16282向框外延伸。 The first limiting frame 1626 , the second limiting frame 1628 and the first sample holder socket 1630 are disposed on the supporting platform 1624 . The first sample holder socket 1630 has two opposite protruding rods 1632 , the function of the first sample holder socket 1630 is to fix the sample holder 136 and further fix the low-dimensional material. The second limiting frame 1628 has two opposite side walls, and the two opposite side walls respectively have a second opening 16282 . The second opening 16282 has two opposite sides perpendicular to the horizontal plane. The first sample holder socket 1630 is disposed in the second limiting frame 1628 , and the two protruding rods 1632 extend outward from the two second openings 16282 respectively. The surface of the second limiting frame 1628 is sleeved by the first limiting frame 1626 , that is, the first limiting frame 1626 is sleeved on the outside of the second limiting frame 1628 . The first limiting frame 1626 has two opposite side walls, and a first opening 16260 is respectively formed on the two opposite side walls. Two protruding rods 1632 respectively extend out of two first openings 16260 . That is to say, the first limiting frame 1626 is sleeved outside the second limiting frame 1628, the first sample holder socket 1630 is located in the frame of the second limiting frame 1628, and the first sample holder socket 1630 Two protrusions 1632 extend out of the frame through the first opening 16260 and the second opening 16282 .
所述磁力棒1634与所述电极蒸镀腔连接，并且与所述第一限位框1626中的第一壁16264间隔或直接接触，该第一壁16264与所述设置有第一开口16260的侧壁相邻，且该第一壁16264靠近所述斜面16262。当该磁力棒1634推第一限位框1626的第一壁16264时，所述第一样品托插座1630由于所述第一开口16260中斜面16262和所述第二开口16282的限定而向上移动；当撤回该磁力棒1634，使磁力棒1634远离所述第一限位框1626时，所述第一样品托插座1630在重力的作用下向下移动。即，所述第一样品托插座1630在重力的作用下向掩模的位置靠近。 The magnetic bar 1634 is connected to the electrode evaporation chamber, and is spaced from or directly in contact with the first wall 16264 in the first limiting frame 1626, and the first wall 16264 is in contact with the first opening 16260. The side walls are adjacent, and the first wall 16264 is close to the slope 16262 . When the magnetic rod 1634 pushes the first wall 16264 of the first limiting frame 1626, the first sample holder socket 1630 moves upward due to the limitation of the slope 16262 in the first opening 16260 and the second opening 16282 ; When withdrawing the magnetic rod 1634 to make the magnetic rod 1634 away from the first limit frame 1626, the first sample holder socket 1630 moves downward under the action of gravity. That is, the first sample holder socket 1630 approaches the position of the mask under the action of gravity.
请参见图5，所述刻划处理单元166进一步包括一顶法兰1660、一微动刻划器1662和一第二样品托插座1666。所述刻划处理腔通过所述顶法兰1660与所述传样腔164连接。所述微动刻划器1662和第二样品托插座1666位于该刻划处理腔内部，且分别固定于所述顶法兰1660上。所述第二样品托插座的作用是固定所述样品托136，从而固定所述低维材料。所述微动刻划器1662具有一刻划针1664，该微动刻划器1662可以由压电陶瓷18028驱动，在所述显微镜168的观测下，利用刻划针1664将电极测量区域刻划隔离出来。 Please refer to FIG. 5 , the scribe processing unit 166 further includes a top flange 1660 , a micro-motion scriber 1662 and a second sample holder socket 1666 . The scribe processing chamber is connected to the sample transfer chamber 164 through the top flange 1660 . The micro-motion scoring device 1662 and the second sample holder socket 1666 are located inside the scoring processing chamber, and are respectively fixed on the top flange 1660 . The function of the second sample holder socket is to fix the sample holder 136, thereby fixing the low-dimensional material. The fretting marker 1662 has a scribe needle 1664, and the fretting marker 1662 can be driven by a piezoelectric ceramic 18028. Under the observation of the microscope 168, the scribe needle 1664 is used to scribe the electrode measurement area isolate.
请参见图6和图7，所述输运性质测量系统18包括一测量头180和一测量腔182，所述测量头180包括一样品台1800、一探针台1802和一第一电极盘1804重叠设置，所述探针台1802位于所述样品台1800与所述第一电极盘1804之间。所述测量腔182内部的底部具有一第二电极盘1820，所述第一电极盘1804和第二电极盘1820具有一一对应的电极。所述测量腔182为真空环境且为低温环境，优选地，所述测量腔182为真空和极低温强磁场环境。本实施例中，所述测量腔182为极低温强磁场杜瓦。所述样品台1800、探针台1802和第一电极盘1804设置在一起的方法不限，本实施例中，所述样品台1800、探针台1802和第一电极盘1804通过支撑柱及螺丝（图未示）固定在一起。 6 and 7, the transport property measurement system 18 includes a measurement head 180 and a measurement cavity 182, the measurement head 180 includes a sample stage 1800, a probe station 1802 and a first electrode plate 1804 Overlapping, the probe station 1802 is located between the sample stage 1800 and the first electrode plate 1804 . The bottom of the measurement cavity 182 has a second electrode disk 1820, and the first electrode disk 1804 and the second electrode disk 1820 have one-to-one corresponding electrodes. The measurement cavity 182 is a vacuum environment and a low-temperature environment. Preferably, the measurement cavity 182 is a vacuum environment with a very low temperature and a strong magnetic field. In this embodiment, the measurement cavity 182 is a Dewar with a very low temperature and a strong magnetic field. The method of setting the sample stage 1800, the probe station 1802 and the first electrode disk 1804 together is not limited. In this embodiment, the sample stage 1800, the probe station 1802 and the first electrode disk 1804 are connected by supporting columns and screws. (not shown) fixed together.
所述样品台1800可以固定所述样品托136，所述样品托136用于夹持样品。所述样品为设置于基底122上的低维材料结构124，低维材料结构124的远离基底122的表面设置有电极，且电极位于一微刻划区内。所述低维材料结构124是零维、一维或二维结构。 The sample stage 1800 can fix the sample holder 136, and the sample holder 136 is used to hold a sample. The sample is a low-dimensional material structure 124 disposed on a substrate 122. Electrodes are disposed on the surface of the low-dimensional material structure 124 away from the substrate 122, and the electrodes are located in a micro-scribing area. The low-dimensional material structure 124 is a zero-dimensional, one-dimensional or two-dimensional structure.
所述探针台1802包括一限位基底18020、一筒状基底18022和一位移台18026。所述位移台18026的形状为T型，具体地，该位移台18026由一第一位移体18026a和一第二位移体18026b组成，该第二位移体18026b具有相对的两端，所述第一位移体18026a的中间与第二位移体18026b的一端连接，以便形成T型，所述第二位移体18026b的另一端设置一探针阵列18030。优选地，所述第一位移体18026a的中间与第二位移体18026b的一端一体成型地连接成一体。所述筒状基底18022的底壁18024具有一第四通孔，所述第二位移体18026b设置探针阵列18030的一端穿过该第四通孔伸入筒状基底18022内部，而所述第一位移体18026a位于筒状基底18022的底壁18024的外侧。所述限位基底18020位于第一位移体18026a远离筒状基底18022的一侧，且与该第一位移体18026a间隔设置。所述限位基底18020靠近第一位移体18026a远离筒状基底18022的表面。所述限位基底18020靠近第一位移体18026a的表面和所述筒状基底18022的底壁18024靠近第一位移体18026a的表面均设置多个压电陶瓷18028，该多个压电陶瓷18028可以驱动位移台18026沿着垂直于筒状基底18022的轴线方向移动。所述筒状基底18022的内侧壁上设置多个压电陶瓷18028，该多个压电陶瓷18028可以驱动位移台18026沿着筒状基底18022的轴线方向移动。所述探针阵列18030随着位移台18026的移动而移动，以便与所述微刻划区的电极接触，即实现探针阵列18030与电极电连接。所述探针阵列18030由四个探针组成。 The probe station 1802 includes a position-limiting base 18020 , a cylindrical base 18022 and a displacement table 18026 . The shape of the displacement table 18026 is T-shaped. Specifically, the displacement table 18026 is composed of a first displacement body 18026a and a second displacement body 18026b. The second displacement body 18026b has two opposite ends. The middle of the displacement body 18026a is connected with one end of the second displacement body 18026b to form a T shape, and a probe array 18030 is provided at the other end of the second displacement body 18026b. Preferably, the middle of the first displacement body 18026a is integrally connected with one end of the second displacement body 18026b. The bottom wall 18024 of the cylindrical base 18022 has a fourth through hole, and one end of the second displacement body 18026b provided with the probe array 18030 extends into the inside of the cylindrical base 18022 through the fourth through hole, and the first A displacement body 18026a is located outside the bottom wall 18024 of the cylindrical base 18022 . The limiting base 18020 is located on the side of the first displacement body 18026a away from the cylindrical base 18022, and is spaced apart from the first displacement body 18026a. The limiting base 18020 is close to the surface of the first displacement body 18026a away from the cylindrical base 18022 . A plurality of piezoelectric ceramics 18028 are provided on the surface of the limiting base 18020 close to the first displacement body 18026a and the surface of the bottom wall 18024 of the cylindrical base 18022 close to the first displacement body 18026a, and the plurality of piezoelectric ceramics 18028 can The translation stage 18026 is driven to move in a direction perpendicular to the axis of the cylindrical base 18022 . A plurality of piezoelectric ceramics 18028 are disposed on the inner wall of the cylindrical base 18022 , and the plurality of piezoelectric ceramics 18028 can drive the displacement stage 18026 to move along the axial direction of the cylindrical base 18022 . The probe array 18030 moves with the movement of the translation stage 18026 so as to contact the electrodes in the micro-scribing area, that is, to realize the electrical connection between the probe array 18030 and the electrodes. The probe array 18030 consists of four probes.
请参见图8，本发明进一步提供一种低维材料原位输运性质测量方法，包括以下步骤： Please refer to Fig. 8, the present invention further provides a method for measuring in-situ transport properties of low-dimensional materials, including the following steps:
S1，真空环境下，在一基底122上制备一低维材料结构124； S1, prepare a low-dimensional material structure 124 on a substrate 122 in a vacuum environment;
S2，真空环境下，在所述低维材料结构124远离基底122的部分表面设置一电极； S2, in a vacuum environment, setting an electrode on a part of the surface of the low-dimensional material structure 124 away from the substrate 122;
S3，真空环境下，在所述低维材料结构124上刻划出一微刻划区域，并且所述电极位于该微刻划区域内； S3, under a vacuum environment, scribe a micro-scribing area on the low-dimensional material structure 124, and the electrodes are located in the micro-scribing area;
S4，真空环境下，将一探针阵列18030接触所述电极，进行输运性质的测量。 S4, under a vacuum environment, a probe array 18030 is brought into contact with the electrode to measure transport properties.
步骤S1中，所述基底122的材料不限，可以为STO（钛酸锶SrTiO3）。加热蒸发源126使其蒸发至悬空设置在所述低维材料制备系统12中的基底122的下表面上，制备一低维材料结构124。所述蒸发源126为Fe（铁）源、Se（硒）源、In（铟）源等，所述真空度和温度根据实际需要进行调整。所述低维材料结构124可以为零维、一维或二维结构，比如颗粒、线或膜，该低维材料结构124可以为超导薄膜等。本实施例中，所述基底122为2×10毫米的STO，所述低维材料结构124为FeSe薄膜，该FeSe薄膜的厚度为几纳米，所述蒸发源126为Fe源和Se源，Fe源的温度约为1000℃，Se源的温度约为150℃，真空度约为1×10-9torr（托）。其中，所述基底122和低维材料结构124形成第一样品。 In step S1, the material of the substrate 122 is not limited, and may be STO (strontium titanate SrTiO 3 ). The evaporation source 126 is heated to evaporate to the lower surface of the substrate 122 suspended in the low-dimensional material preparation system 12 to prepare a low-dimensional material structure 124 . The evaporation source 126 is Fe (iron) source, Se (selenium) source, In (indium) source, etc., and the vacuum degree and temperature are adjusted according to actual needs. The low-dimensional material structure 124 can be a zero-dimensional, one-dimensional or two-dimensional structure, such as particles, wires or films, and the low-dimensional material structure 124 can be a superconducting film or the like. In this embodiment, the substrate 122 is STO of 2×10 mm, the low-dimensional material structure 124 is a FeSe thin film, the thickness of the FeSe thin film is several nanometers, the evaporation source 126 is an Fe source and a Se source, and Fe The temperature of the source is about 1000°C, the temperature of the Se source is about 150°C, and the degree of vacuum is about 1×10 -9 torr (Torr). Wherein, the substrate 122 and the low-dimensional material structure 124 form a first sample.
步骤S2中，在所述低维材料结构124远离基底122的部分表面设置一电极，包括以下步骤： In step S2, setting an electrode on the part of the surface of the low-dimensional material structure 124 away from the substrate 122 includes the following steps:
S21，通过磁力棒1634推第一限位框1626的第一壁16264时，所述第一样品托插座1630由于所述第一开口16260中斜面16262和所述第二开口16282的限定而向上移动，离开掩模2毫米； S21, when the first wall 16264 of the first limiting frame 1626 is pushed by the magnetic rod 1634, the first sample holder socket 1630 is upward due to the limitation of the slope 16262 in the first opening 16260 and the second opening 16282 Move, 2 mm away from the mask;
S22，利用磁力杆134将所述第一样品由低维材料制备系统12传送至所述低维材料处理系统16中电极蒸镀腔内的第一样品托插座1630，具体地，所述第一样品被样品托136夹持，并跟随样品托136被磁力杆134传送至低维材料处理系统16中电极蒸镀腔内的第一样品托插座1630上； S22, using the magnetic rod 134 to transfer the first sample from the low-dimensional material preparation system 12 to the first sample holder socket 1630 in the electrode evaporation chamber of the low-dimensional material processing system 16, specifically, the The first sample is clamped by the sample holder 136, and is transferred to the first sample holder socket 1630 in the electrode evaporation chamber of the low-dimensional material processing system 16 by the magnetic rod 134 following the sample holder 136;
S23，逐渐松动磁力棒1634，使磁力棒1634远离所述第一限位框1626，所述第一样品托插座1630在重力的作用下向下移动，即，第一样品托插座1630在重力的作用下逐渐与掩模靠近，使得第一样品中低维材料结构124远离基底122的部分表面和掩模逐渐靠近直至接触； S23, gradually loosen the magnetic rod 1634, so that the magnetic rod 1634 is away from the first limit frame 1626, and the first sample holder socket 1630 moves downward under the action of gravity, that is, the first sample holder socket 1630 is in the Gradually approach the mask under the action of gravity, so that the part of the surface of the low-dimensional material structure 124 in the first sample away from the substrate 122 and the mask gradually approach until they touch;
S24，加热电极蒸发源160，通过所述掩模将电极蒸镀到低维材料结构124远离基底122的部分表面。本实施例中，所述电极蒸发源160为金，加热温度为1000度，蒸镀时间为30分钟，真空度为真空度10-8torr。 S24 , heating the electrode evaporation source 160 , and evaporating the electrode on a part of the surface of the low-dimensional material structure 124 away from the substrate 122 through the mask. In this embodiment, the electrode evaporation source 160 is gold, the heating temperature is 1000°C, the evaporation time is 30 minutes, and the vacuum degree is 10 −8 torr.
步骤S3中，在所述低维材料结构124远离基底122的表面刻划出一微刻划区域，并且所述电极位于该微刻划区域内的具体过程是：利用磁力杆134将所述第一样品由所述电极蒸镀腔穿过传样腔164传送至刻划处理腔内的第二样品托插座1666上，在显微镜168的观测下，驱动微动刻划器1662，使微动刻划器1662上的刻划针1664在低维材料结构124远离基底122的表面刻划该低维材料结构124，在低维材料结构124上刻划一微刻划区域，且所述电极位于该微刻划区域内。所述微刻划区域的形状不限，本实施例中，所述微刻划区域为100微米乘以100微米的正方形。 In step S3, a micro-scribing area is marked on the surface of the low-dimensional material structure 124 away from the substrate 122, and the specific process for the electrode to be located in the micro-scribing area is: use the magnetic bar 134 to place the first A sample is transferred from the electrode evaporation chamber through the sample transfer chamber 164 to the second sample holder socket 1666 in the marking processing chamber, and under the observation of the microscope 168, the micro-moving marking device 1662 is driven to make the micro-motion The scribe needle 1664 on the scriber 1662 scribes the low-dimensional material structure 124 on the surface of the low-dimensional material structure 124 away from the substrate 122, and scribes a micro-scribed region on the low-dimensional material structure 124, and the electrodes are located at within the microscribed area. The shape of the micro-scribing area is not limited, and in this embodiment, the micro-scribing area is a square of 100 microns by 100 microns.
步骤S4中，将经过微刻划处理的第一样品传送至所述输运性质测量系统18中，使所述微刻划区域中的电极与所述测量头180上的探针阵列18030在一长焦显微镜168的观测下先对接，然后使探针阵列18030略微移开电极，再将电极和探针阵列18030整体传送至所述测量腔182中，最后使所述探针阵列18030接触所述电极，进行输运性质的测量。具体步骤是： In step S4, the first sample processed by micro-scribing is sent to the transport property measurement system 18, so that the electrodes in the micro-scribing area and the probe array 18030 on the measuring head 180 are aligned Under the observation of a long-focus microscope 168, it is first docked, and then the probe array 18030 is slightly moved away from the electrodes, and then the electrodes and the probe array 18030 are transferred to the measurement chamber 182 as a whole, and finally the probe array 18030 is brought into contact with the electrode. The above electrodes were used to measure the transport properties. The specific steps are:
步骤S41，所述经过微刻划处理的第一样品被样品托136固定，并被磁力杆134传送至所述输运性质测量系统18中的样品台1800上，该样品台1800有一通孔，所述第一样品被固定于该通孔中，并且，所述低维材料结构124远离基底122的表面靠近所述探针台1802上的探针阵列18030； Step S41, the first sample processed by micro-scribing is fixed by the sample holder 136, and transferred to the sample stage 1800 in the transport property measurement system 18 by the magnetic rod 134, and the sample stage 1800 has a through hole , the first sample is fixed in the through hole, and the surface of the low-dimensional material structure 124 away from the substrate 122 is close to the probe array 18030 on the probe station 1802;
步骤S42，利用所述多组压电陶瓷18028驱动所述限位基底18020和筒状基底18022，使得所述位移台18026沿着垂直于筒状基底18022的轴线方向和平行于筒状基底18022的轴线方向移动，所述探针阵列18030随着位移台18026的移动而移动，使得探针阵列18030与所述微刻划区域中的电极对接，这一过程可以在一长焦显微镜168（图未视）下观测进行，保证探针阵列18030与电极对接的顺利进行，所述对接是指探针阵列18030与所述微刻划区域中的电极接触； Step S42, using the plurality of sets of piezoelectric ceramics 18028 to drive the position-limiting base 18020 and the cylindrical base 18022, so that the displacement stage 18026 moves along the direction perpendicular to the axis of the cylindrical base 18022 and parallel to the axis of the cylindrical base 18022. axis direction, the probe array 18030 moves with the movement of the translation stage 18026, so that the probe array 18030 is docked with the electrodes in the micro-scribing area. This process can be performed in a telephoto microscope 168 (not shown in the figure) under observation) to ensure the smooth progress of docking between the probe array 18030 and the electrodes, the docking refers to the contact between the probe array 18030 and the electrodes in the micro-scribing area;
步骤S43，利用所述多组压电陶瓷18028驱动所述限位基底18020，使位移台18026向着远离样品台1800的方向略微移动，探针阵列18030随同位移台18026略微移开电极； Step S43, using the plurality of sets of piezoelectric ceramics 18028 to drive the position-limiting base 18020, so that the translation stage 18026 moves slightly away from the sample stage 1800, and the probe array 18030 moves slightly away from the electrode along with the translation stage 18026;
步骤S44，利用磁力杆134将样品台1800和探针台1802整体传送至测量腔182内，使所述第一电极盘1804上的电极与测量腔182内第二电极盘1820上的电极对接； Step S44, using the magnetic rod 134 to transfer the sample stage 1800 and the probe station 1802 into the measurement chamber 182 as a whole, so that the electrodes on the first electrode disk 1804 are docked with the electrodes on the second electrode disk 1820 in the measurement chamber 182;
步骤S45，略微移动探针阵列18030，使探针阵列18030与位于微刻划区域中的电极再次对接，也就是使探针阵列18030与低维材料远离基底122的表面的微刻划区域中的电极电连接，进行输运性质的测量。 Step S45, slightly moving the probe array 18030, so that the probe array 18030 is docked with the electrodes located in the micro-scratched area again, that is, the probe array 18030 and the micro-scribed area on the surface of the low-dimensional material away from the substrate 122 The electrodes are electrically connected and measurements of transport properties are made.
所述使探针阵列18030略微移开电极，再将电极和探针阵列18030整体传送至所述测量腔182中，最后使所述探针阵列18030接触所述电极进行输运性质测量的目的是：使样品台1800和探针台1802整体传送至真空不可视的测量腔182内时不会损坏探针。所述不可视是指测量腔182为密闭不透明结构，当将样品台1800和探针台1802整体传送至测量腔182内时，操作者看不到测量腔182内部的情况。 The purpose of making the probe array 18030 slightly move away from the electrode, then transporting the electrode and the probe array 18030 into the measurement cavity 182 as a whole, and finally making the probe array 18030 contact the electrode for transport property measurement is : The probes will not be damaged when the sample stage 1800 and the probe station 1802 are transferred as a whole to the measurement chamber 182 where the vacuum is not visible. The invisible means that the measurement chamber 182 is an airtight and opaque structure. When the sample stage 1800 and the probe station 1802 are transferred into the measurement chamber 182 as a whole, the operator cannot see the situation inside the measurement chamber 182 .
可以理解，可以在所述低维材料结构124远离基底122的整个表面设置一电极，此时，可以不用刻划所述低维材料结构124，直接将一探针阵列18030接触所述电极，进行输运性质的测量。 It can be understood that an electrode can be provided on the entire surface of the low-dimensional material structure 124 away from the substrate 122. At this time, a probe array 18030 can be directly contacted with the electrode without marking the low-dimensional material structure 124 to perform Measurement of transport properties.
所述低维材料原位输运性质测量方法进一步包括一在所述低维材料结构124远离基底122的部分表面设置电极之前，对该低维材料结构124的形貌和表面电子结构进行测试分析。具体过程是：所述低维材料在低维材料制备系统12内制备后，由磁力杆134传送至低维材料表征系统14内，进行低维材料形貌和表面电子结构的测试分析。可以理解，这一步骤为可选步骤。 The method for measuring the in-situ transport properties of low-dimensional materials further includes: before setting electrodes on the surface of the low-dimensional material structure 124 away from the substrate 122, testing and analyzing the morphology and surface electronic structure of the low-dimensional material structure 124 . The specific process is: after the low-dimensional material is prepared in the low-dimensional material preparation system 12, it is transferred to the low-dimensional material characterization system 14 by the magnetic rod 134, and the low-dimensional material morphology and surface electronic structure are tested and analyzed. It can be understood that this step is optional.
本发明提供的原位输运性质测量装置10及原位输运性质测量方法具有以下优点：第一、本发明提供的原位输运性质测量装置10通过将低维材料制备系统12、低维材料处理系统16和输运性质测量系统18通过磁力杆134连接，且保持该整个装置为真空环境，使得所述低维材料从制备到测量输运性质的过程中均处于恒定不变的真空环境中，确保了低维材料不会造成污染，可以测得低维材料最本征的输运性质，提高了原位输运性质测量方法的准确度；第二、所述电极蒸镀腔162的设置，可以在低维材料远离基底122的表面蒸镀电极，进而通过电极与探针阵列18030接触的方式测量低维材料的输运性质，与现有技术中利用探针直接接触低维材料测量输运性质相比，通过电极与探针阵列18030接触的方式测量低维材料的输运性质，不仅可以避免低维材料被探针阵列18030破坏，而且电极与探针阵列18030电接触的效果好，可以提高输运性质测量的灵敏度；第三、所述电极蒸镀腔162内第一样品托插座1630、第二限位框1628、第一限位框1626和磁力棒1634的设置方式，使得在低维材料远离基底122的表面蒸镀电极时不会破坏低维材料；第四、所述刻划处理腔166的设置，使得所述低维材料在进行输运性质测量之前，先将电极所处的微刻划区域刻划出来，也即将该微刻划区域与低维材料的其它部分隔离，可以使该微刻划区域的低维材料的输运性质的测量不受干扰，提高输运性质测量的准确度；第五、所述样品台1800和探针台1802的设置，可以使低维材料被传送至测量腔182时，探针阵列18030不会破坏低维材料；第六、所述测量头180、测量腔182的设置，可以使低维材料输运性质的测量在极低温强磁场下进行，扩大了低维材料的研究领域。 The in-situ transport property measurement device 10 and the in-situ transport property measurement method provided by the present invention have the following advantages: First, the in-situ transport property measurement device 10 provided by the present invention is prepared by using a low-dimensional material preparation system 12, a low-dimensional The material processing system 16 and the transport property measurement system 18 are connected by a magnetic rod 134, and the entire device is kept in a vacuum environment, so that the low-dimensional material is in a constant vacuum environment during the process from preparation to transport property measurement Among them, it is ensured that low-dimensional materials will not cause pollution, and the most intrinsic transport properties of low-dimensional materials can be measured, which improves the accuracy of the in-situ transport property measurement method; second, the electrode evaporation chamber 162 setting, electrodes can be evaporated on the surface of the low-dimensional material away from the substrate 122, and then the transport properties of the low-dimensional material can be measured by contacting the electrode with the probe array 18030, which is different from the prior art of using the probe to directly contact the low-dimensional material. Compared with the transport properties, measuring the transport properties of low-dimensional materials by contacting the electrodes with the probe array 18030 can not only prevent the low-dimensional materials from being damaged by the probe array 18030, but also have a good electrical contact effect between the electrodes and the probe array 18030 , can improve the sensitivity of the transport property measurement; third, the arrangement of the first sample holder socket 1630, the second limit frame 1628, the first limit frame 1626 and the magnetic bar 1634 in the electrode evaporation chamber 162, So that the low-dimensional material will not be damaged when the low-dimensional material is away from the surface of the substrate 122 when the electrode is evaporated; fourth, the setting of the scribe processing chamber 166 allows the low-dimensional material to The micro-scribing area where the electrode is located is marked out, that is, the micro-scribing area is isolated from other parts of the low-dimensional material, so that the measurement of the transport properties of the low-dimensional material in the micro-scribing area is not disturbed, and the The accuracy of transport property measurement; fifth, the setting of the sample stage 1800 and the probe station 1802 can make the low-dimensional material be transported to the measurement cavity 182, and the probe array 18030 will not damage the low-dimensional material; sixth . The arrangement of the measuring head 180 and the measuring cavity 182 can make the measurement of the transport properties of low-dimensional materials be carried out under extremely low temperature and strong magnetic field, which expands the research field of low-dimensional materials.
另外，本领域技术人员还可在本发明精神内做其他变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。 In addition, those skilled in the art can also make other changes within the spirit of the present invention. Of course, these changes made according to the spirit of the present invention should be included within the scope of protection claimed by the present invention.
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