CN104749325B - Transport property measuring method in situ - Google Patents
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- CN104749325B CN104749325B CN201510172271.XA CN201510172271A CN104749325B CN 104749325 B CN104749325 B CN 104749325B CN 201510172271 A CN201510172271 A CN 201510172271A CN 104749325 B CN104749325 B CN 104749325B
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 24
- 239000000523 sample Substances 0.000 claims abstract description 131
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 238000005259 measurement Methods 0.000 claims abstract description 56
- 239000012528 membrane Substances 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims description 129
- 238000002360 preparation method Methods 0.000 claims description 37
- 230000008020 evaporation Effects 0.000 claims description 34
- 238000001704 evaporation Methods 0.000 claims description 34
- 238000003913 materials processing Methods 0.000 claims description 31
- 230000033001 locomotion Effects 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 9
- 238000004458 analytical method Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 230000032258 transport Effects 0.000 description 65
- 238000006073 displacement reaction Methods 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000011066 ex-situ storage Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005492 condensed matter physics Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000012826 global research Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
- 238000004647 photon scanning tunneling microscopy Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
A kind of transport property measuring method in situ, comprises the following steps: in one first vacuum environment, prepare a membrane structure in a substrate；In one second vacuum environment, at this membrane structure away from surface configuration one electrode of substrate, and drawing process at described membrane structure away from carrying out miniature carving on the surface of substrate, depict a micro-scored area, described electrode is positioned at this micro-scored area；And one the 3rd in vacuum environment, by electrode described in a probe array contacts, carry out the measurement of transport property；Described first vacuum environment, the second vacuum environment, the 3rd vacuum environment are a continuous print vacuum environment, this continuous print vacuum environment refers to that described membrane structure is directly entered the second vacuum environment from the first vacuum environment, and it being directly entered the 3rd vacuum environment from the second vacuum environment, this membrane structure does not has and air contact.The invention still further relates to a kind of transport property measurement apparatus in situ.
Description
Technical field
The present invention relates to a kind of transport property measuring method in situ.
Background technology
Low-dimensional quantum material is one of field that physics research content is the abundantest.The two-dimensional electron gas of heterogeneous semiconductor junction interface, Graphene, cuprio and iron-based superconductor, topological insulator, oxide interface and Transition-metal dichalcogenide stratified material etc. broadly fall into this kind of system.These systems present the quantum state that in nature, some are the most magical, relate to the important scientific problems that Condensed Matter Physics is main, it it is the crucial system disclosing the sub-related question of forceful electric power that low dimensional physics is most challenged, they probably still result in a class system of the even revolutions of technology significant innovation such as Future Information, clean energy resource, electric power and accurate measurement, are current global research emphasis.Research for this kind of system, not only need the laboratory facilities of precision, it is more importantly, all can refine physically due to them and be reduced to thickness is a quasi-two-dimensional system arriving several atomic layers/unit primitive unit cell, generally directly cannot study under air ambient, so Material growth in situ, the property representation of original position and the measurement etc. that transports in situ are to measure the technological means that low-dimensional materials are indispensable.
At present, low-dimensional materials transporting test and also predominantly stays in the measurement of ex situ, will take out vacuum system by the interior low-dimensional materials grown of vacuum environment, place into and test in test system, test system is with Quantum
The product of Design company is representative, it is possible to carry out the measurement under fine low temperature and magnetic field, but ex situ is measured and inevitably polluted low-dimensional materials so that the transport property of measurement is not the character of low-dimensional materials intrinsic.
It addition, typically utilize probe directly to contact low-dimensional materials in prior art carry out the measurement of transport property, the structure of low-dimensional materials is destroyed by probe unavoidably, and then affects the accuracy that transport property is measured.
Summary of the invention
In view of this, low-dimensional materials will not be polluted and destroy by necessary offer one, can record the original position transport property measuring method of the transport property of low-dimensional materials intrinsic.
A kind of transport property measuring method in situ, comprises the following steps: in one first vacuum environment, prepare a membrane structure in a substrate；In one second vacuum environment, at this membrane structure away from surface configuration one electrode of substrate, and drawing process at described membrane structure away from carrying out miniature carving on the surface of substrate, depict a micro-scored area, described electrode is positioned at this micro-scored area；And one the 3rd in vacuum environment, by electrode described in a probe array contacts, measuring the transport property of this membrane structure, wherein, described first vacuum environment, the second vacuum environment, the 3rd vacuum environment are a continuous print vacuum environment.
A kind of transport property measuring method in situ, comprises the following steps: provide a low-dimensional materials preparation system, for preparation one membrane structure；One low-dimensional materials processing system is provided, for the surface configuration electrode at described membrane structure, and delineates this membrane structure, make electrode be in a micro-scored area；And provide a transport property to measure system, for measuring the transport property of described membrane structure；Described low-dimensional materials preparation system is connected by magnetic rod with low-dimensional materials processing system, described low-dimensional materials processing system and transport property are measured system and are connected by magnetic rod, and are a continuous print vacuum environment in described low-dimensional materials preparation system, low-dimensional materials processing system, transport property measurement system and magnetic rod.
Compared with prior art, the original position transport property measuring method that the present invention provides, low-dimensional materials are made to be in invariable vacuum environment during being prepared into the transport property measuring this low-dimensional materials structure, ensure that low-dimensional materials do not result in pollution, the transport property of low-dimensional materials intrinsic can be recorded.And, at the surface electrode evaporation of low-dimensional materials, by the way of electrode contacts with probe, measure the transport property of low-dimensional materials, the structure of low-dimensional materials will not be destroyed.
Accompanying drawing explanation
Fig. 1 is the structural representation of the stereochemical structure of transport property measurement apparatus in situ.
Fig. 2 is the cross-sectional view of low-dimensional materials preparation system.
Fig. 3 is the structural representation of the stereochemical structure of low-dimensional materials processing system.
Fig. 4 is the stereochemical structure exploded view in electrode evaporation intracavity portion in low-dimensional materials processing system.
Fig. 5 is that in low-dimensional materials processing system, delineation processes intracavity portion and microscopical perspective view.
Fig. 6 is the stereochemical structure decomposing schematic representation that transport property measures system.
Fig. 7 is the cross-sectional view that transport property measures system middle probe platform.
Fig. 8 is the flow chart of low-dimensional materials transport property measuring method in situ.
Main element symbol description
| Transport property measurement apparatus in situ | 10 |
| First connecting tube | 20 |
| Second connecting tube | 22 |
| 3rd connecting tube | 24 |
| Low-dimensional materials preparation system | 12 |
| Reaction chamber | 120 |
| Substrate | 122 |
| Low-dimensional materials structure | 124 |
| Evaporation source | 126 |
| Vacuum pump | 128 |
| Vacuum gauge | 130 |
| Fast sample chamber | 132 |
| Magnetic rod | 134 |
| Sample carrier | 136 |
| Cantilever lever | 138 |
| Low-dimensional materials characterize system | 14 |
| Low-dimensional materials processing system | 16 |
| Electrode evaporation source | 160 |
| Electrode deposition unit | 162 |
| End flange | 1620 |
| Support bar | 1622 |
| Support platform | 1624 |
| First limitting casing | 1626 |
| First opening | 16260 |
| Inclined-plane | 16262 |
| First wall | 16264 |
| Second limitting casing | 1628 |
| Second opening | 16282 |
| First sample carrier socket | 1630 |
| Convex rod | 1632 |
| Magnetic bar | 1634 |
| Pass sample chamber | 164 |
| Delineation processing unit | 166 |
| Top flange | 1660 |
| Fine motion graver | 1662 |
| Engraving needle | 1664 |
| Second sample carrier socket | 1666 |
| Microscope | 168 |
| Transport property measures system | 18 |
| Measure head | 180 |
| Sample stage | 1800 |
| Probe station | 1802 |
| Spacing substrate | 18020 |
| Tubular substrate | 18022 |
| Diapire | 18024 |
| Displacement platform | 18026 |
| First displacement body | 18026a |
| Second displacement body | 18026b |
| Piezoelectric ceramics | 18028 |
| Probe array | 18030 |
| First electrode disk | 1804 |
| Measure chamber | 182 |
| Second electrode disk | 1820 |
Following detailed description of the invention will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
The original position transport property measuring method provided the present invention below in conjunction with the accompanying drawings and the specific embodiments is described in further detail.
Referring to Fig. 1, the present invention provides a kind of transport property measurement apparatus 10 in situ, characterizes system 14, low-dimensional materials processing system 16 including low-dimensional materials preparation system 12, low-dimensional materials and a transport property measures system 18.Described low-dimensional materials preparation system 12 characterizes system 14 by the first connecting tube 20 with low-dimensional materials and is connected, described low-dimensional materials preparation system 12 is connected with low-dimensional materials processing system 16 by the second connecting tube 22, and described low-dimensional materials processing system 16 is measured system 18 by the 3rd connecting tube 24 with transport property and is connected.It is appreciated that first connecting tube the 20, second connecting tube the 22, the 3rd connecting tube 24 and low-dimensional materials preparation system 12, low-dimensional materials sign system 14, low-dimensional materials processing system 16 and transport property are measured and all passed through Flange joint between system 18.
The effect of described low-dimensional materials preparation system 12 is to prepare low-dimensional materials, it is that low-dimensional materials pattern and Electronic Structure are carried out test analysis that described low-dimensional materials characterize system 14, described low-dimensional materials processing system 16 is at the surface configuration electrode of low-dimensional materials and this electrode miniature carving to be marked, and it is that the transport property to these low-dimensional materials measures that described transport property measures system 18.Described low-dimensional materials preparation system 12, low-dimensional materials characterize in system 14, low-dimensional materials processing system 16 and transport property measurement system 18 and arrange multiple magnetic rod 134, and the plurality of magnetic rod 134 characterizes system 14, low-dimensional materials processing system 16 and transport property measure transmission sample between system 18 at low-dimensional materials preparation system 12, low-dimensional materials.Described original position transport property measurement apparatus 10 is vacuum environment, and multiple magnetic rod 134 characterizes during transmitting sample between system 14, low-dimensional materials processing system 16 and transport property measurement system 18 also keep vacuum environment at low-dimensional materials preparation system 12, low-dimensional materials.Described vacuum environment can be realized by vacuum pump 128 evacuation.It is appreciated that, described low-dimensional materials preparation system 12, low-dimensional materials characterize and all can realize being connected two-by-two by a connecting tube and flange between system 14, low-dimensional materials processing system 16 and transport property measurement system 18, and this four systems can freely transmit sample by described magnetic rod 134.It is appreciated that, it is a continuous print vacuum environment that vacuum environment in described low-dimensional materials preparation system 12, low-dimensional materials characterize the vacuum environment in system 14, the vacuum environment in low-dimensional materials processing system 16 and the vacuum environment in transport property measurement system 18, this continuous print vacuum environment refers to that described sample characterizes system 14, low-dimensional materials processing system 16 and transport property measurement system 18 directly transmit at low-dimensional materials preparation system 12, low-dimensional materials, and this sample will not be with air contact.
The present invention only illustrates the set-up mode of magnetic rod 134 as a example by low-dimensional materials preparation system 12, and the mode arranging magnetic rod 134 in low-dimensional materials sign system 14, low-dimensional materials processing system 16 and transport property measurement system 18 is similar, repeats no more here.
Referring to Fig. 2, described low-dimensional materials preparation system 12 includes reaction chamber 120, cantilever lever 138, evaporation source 126, vacuum pump 128, magnetic rod 134 and a fast sample chamber 132.Described low-dimensional materials preparation system 12 in use, also includes a substrate 122.Described cantilever lever 138 has opposite end, and reaction chamber 120 inwall is fixed in one end, and the other end is used for fixing described substrate 122.The plurality of evaporation source 126 is connected with reaction chamber 120, and is spaced just to substrate 122.Specifically, described substrate 122 has relative upper and lower surface, and this substrate 122 upper surface is connected to the upper side wall of reaction chamber 120 by described cantilever lever 138.The plurality of evaporation source 126 is spaced just lower surface to substrate 122.Described vacuum pump 128 is connected with described reaction chamber 120 so that be vacuum environment in reaction chamber 120.One end of described magnetic rod 134 is provided with sample carrier 136 and stretches in described reaction chamber 120, the other end of described magnetic rod 134 is stayed outside reaction chamber 120, to operate this magnetic rod 134 so that this magnetic rod 134 can drive sample carrier 136 to move or make described sample carrier 136 rotate around magnetic rod 134.Described fast sample chamber 132 is connected with reaction chamber 120, it is simple to substrate 122 is put into before reaction reaction chamber 120, and is fixed in described cantilever lever 138.
Further, described low-dimensional materials preparation system 12 can also include a vacuum gauge 130, and this vacuum gauge 130 is connected with described reaction chamber 120, for measuring the vacuum of reaction chamber 120.And, this low-dimensional materials preparation system 12 can also arrange a visual window (drafting), in order to observes the preparation of low-dimensional materials.Described low-dimensional materials preparation system 12 farther includes an opening (drafting), in order to this low-dimensional materials preparation system 12 passes through Flange joint with described first connecting tube 20.Described evaporation source 126, vacuum pump 128, vacuum gauge 130 and magnetic rod 134 are Flange joint with the connection of reaction chamber 120.In the present embodiment, described low-dimensional materials preparation system 12 is molecular beam epitaxy (MBE) growing system.
After described low-dimensional materials are prepared in low-dimensional materials preparation system 12, it is sent to low-dimensional materials by described magnetic rod 134 and characterizes in system 14, after carrying out the test analysis of low-dimensional materials pattern and Electronic Structure, the most again by described magnetic rod 134, low-dimensional materials characterize system 14 and be sent to low-dimensional materials processing system 16.It is vacuum environment that these low-dimensional materials characterize system 14.Described low-dimensional materials characterize the kind of system 14 and do not limit, as long as the environment characterized is vacuum.In the present embodiment, it is PSTM (STM) 168 that described low-dimensional materials characterize system 14.Being appreciated that described low-dimensional materials characterize system 14 is optional system, it is convenient to omit.
Referring to Fig. 3 and Fig. 4, described low-dimensional materials processing system 16 includes that electrode evaporation source 160, electrode deposition unit 162, passes sample chamber 164, delineation processing unit 166 and a microscope 168.Described electrode deposition unit 162 includes an electrode evaporation chamber, and this electrode evaporation chamber has relative two ends, and one end is connected to described biography sample chamber 164, and the other end is connected with described electrode evaporation source 160.Described delineation processing unit 166 includes that a delineation processes chamber, and this delineation processes chamber and has one end, and this one end is connected to described biography sample chamber 164.Described delineation processes chamber and has an observation window (figure does not regards), and described microscope 168 is positioned at described delineation and processes the outside in chamber, can be processed the delineation in electrode measurement region, intracavity portion by the observation delineation of this observation window.Preferably, described microscope 168 is positioned at the bottom outside in delineation process chamber.Described electrode evaporation chamber, biography sample chamber 164 and delineation process chamber and are vacuum environment, can be realized by evacuation.Described connection refers both to Flange joint.
Described electrode deposition unit 162 farther includes an end flange 1620, at least two support bar 1622, supports platform 1624,1 first limitting casing 1626,1 second limitting casing 1628,1 first sample carrier socket 1630 and a magnetic bar 1634.Flange of the described end 1620 is connected with the bottom in described electrode evaporation chamber, in order to close the bottom in this electrode evaporation chamber, and described electrode evaporation source 160 is connected to this electrode evaporation chamber by this end flange 1620.Described at least two support bar 1622, support platform the 1624, first limitting casing the 1626, second limitting casing the 1628, first sample carrier socket 1630 and magnetic bar 1634 may be contained within the inside in this electrode evaporation chamber.
Described support platform 1624 is connected on flange of the described end 1620 by least two support bar 1622.This support platform 1624 has one first through hole, and a mask tiling is arranged on the first through hole of this support platform 1624, and the lower surface of this mask is the most right with described electrode evaporation source 160.
Described first limitting casing the 1626, second limitting casing 1628 and the first sample carrier socket 1630 are arranged on described support platform 1624.Described first sample carrier socket 1630 has relative two convex excellent 1632, and the effect of this first sample carrier socket 1630 is fixing described sample carrier 136, the most fixing described low-dimensional materials.Described second limitting casing 1628 has relative two sidewall, and these two relative sidewalls are respectively provided with one second opening 16282.This second opening 16282 has the side of relative two and horizontal plane.Described first sample carrier socket 1630 is arranged in described second limitting casing 1628, and said two convex excellent 1632 stretches out respectively at said two the second opening 16282.The surface of described second limitting casing 1628 is sheathed by described first limitting casing 1626, and the most described first limitting casing 1626 is set in the outside of the second limitting casing 1628.This first limitting casing 1626 has relative two sidewall, it is respectively provided with one first opening 16260 on these two relative sidewalls, this first opening 16260 has one with the horizontal the inclined-plane 16262 of an angle, and said two convex excellent 1632 each extends over out two the first openings 16260.That is, first limitting casing 1626 is set in the outside of the second limitting casing 1628, first sample carrier socket 1630 be positioned on the frame of the second limitting casing 1628, and the first sample carrier socket 1630 two convex excellent 1632 extend outside frame through described first opening 16260 and the second opening 16282.
Described magnetic bar 1634 is connected with described electrode evaporation chamber, and and the first wall 16264 in described first limitting casing 1626 is spaced or directly contacts, this first wall 16264 is adjacent with the described sidewall being provided with the first opening 16260, and this first wall 16264 is near described inclined-plane 16262.When this magnetic bar 1634 pushes away the first wall 16264 of the first limitting casing 1626, described first sample carrier socket 1630 due in described first opening 16260 inclined-plane 16262 and the restriction of described second opening 16282 and move up；When recalling this magnetic bar 1634, when making magnetic bar 1634 away from described first limitting casing 1626, described first sample carrier socket 1630 moves down under gravity.That is, described first sample carrier socket 1630 being located proximate to mask under gravity.
Referring to Fig. 5, described delineation processing unit 166 farther includes top flange 1660, fine motion graver 1662 and an one second sample carrier socket 1666.Described delineation is processed chamber and is connected with described biography sample chamber 164 by described top flange 1660.Described fine motion graver 1662 and the second sample carrier socket 1666 are positioned at this delineation and process intracavity portion, and are individually fixed on described top flange 1660.The effect of described second sample carrier socket is fixing described sample carrier 136, thus fixing described low-dimensional materials.Described fine motion graver 1662 has an engraving needle 1664, and this fine motion graver 1662 can be driven by piezoelectric ceramics 18028, under the observation of described microscope 168, utilizes engraving needle 1664 delineation of electrode measurement region to be isolated.
Refer to Fig. 6 and Fig. 7, described transport property is measured system 18 and is included that chamber 182 is measured in a measurement 180 and, described measurement 180 includes that sample stage 1800, probe station 1802 and one first electrode disk 1804 overlap, and described probe station 1802 is between described sample stage 1800 and described first electrode disk 1804.Bottom within described measurement chamber 182 has one second electrode disk 1820, and described first electrode disk 1804 and the second electrode disk 1820 have electrode one to one.Described measurement chamber 182 is vacuum environment and is low temperature environment, it is preferable that described measurement chamber 182 is vacuum and extremely low temperature strong magnetic field circumstance.In the present embodiment, described measurement chamber 182 is extremely low temperature high-intensity magnetic field Dewar.The method that described sample stage 1800, probe station 1802 and the first electrode disk 1804 are set together does not limits, and in the present embodiment, described sample stage 1800, probe station 1802 and the first electrode disk 1804 are fixed together by support column and screw (not shown).
Described sample stage 1800 can fix described sample carrier 136, and described sample carrier 136 is used for clamping sample.Described sample is the low-dimensional materials structure 124 being arranged in substrate 122, and the surface configuration away from substrate 122 of low-dimensional materials structure 124 has electrode, and electrode is positioned at a miniature carving partition.Described low-dimensional materials structure 124 is zero dimension, one-dimensional or two-dimensional structure.
Described probe station 1802 includes spacing substrate 18020, tubular substrate 18022 and a displacement platform 18026.Being shaped as of described displacement platform 18026 is T-shaped, specifically, this displacement platform 18026 is made up of one first displacement body 18026a and one second displacement body 18026b, this second displacement body 18026b has relative two ends, the centre of described first displacement body 18026a is connected with one end of the second displacement body 18026b, to be formed T-shaped, the other end of described second displacement body 18026b arranges a probe array 18030.Preferably, the centre of described first displacement body 18026a links into an integrated entity with one end of the second displacement body 18026b one-body moldedly.The diapire 18024 of described tubular substrate 18022 has a fourth hole, described second displacement body 18026b arranges one end of probe array 18030, and to stretch into tubular substrate 18022 through this fourth hole internal, and described first displacement body 18026a is positioned at the outside of diapire 18024 of tubular substrate 18022.Described spacing substrate 18020 is positioned at the first displacement body 18026a side away from tubular substrate 18022, and and this first displacement body 18026a interval setting.Described spacing substrate 18020 near the first displacement body 18026a away from the surface of tubular substrate 18022.Described spacing substrate 18020 is respectively provided with multiple piezoelectric ceramics 18028 near the diapire 18024 of the surface of the first displacement body 18026a and described tubular substrate 18022 near the surface of the first displacement body 18026a, and the plurality of piezoelectric ceramics 18028 can move along the axis direction being perpendicular to tubular substrate 18022 with drive displacement platform 18026.Arranging multiple piezoelectric ceramics 18028 on the medial wall of described tubular substrate 18022, the plurality of piezoelectric ceramics 18028 can move along the axis direction of tubular substrate 18022 with drive displacement platform 18026.Described probe array 18030 moves along with the movement of displacement platform 18026, in order to the electrode contact of described miniature carving partition, i.e. realizes probe array 18030 and electrically connects with electrode.Described probe array 18030 is made up of four probes.
Refer to Fig. 8, the present invention further provides a kind of low-dimensional materials transport property measuring method in situ, comprise the following steps:
S1, under vacuum environment, prepares a low-dimensional materials structure 124 in a substrate 122；
S2, under vacuum environment, arranges an electrode in described low-dimensional materials structure 124 away from the part surface of substrate 122；
S3, under vacuum environment, depicts a micro-scored area in described low-dimensional materials structure 124, and described electrode is positioned at this micro-scored area；
S4, under vacuum environment, contacts described electrode by a probe array 18030, carries out the measurement of transport property.
In step S1, the material of described substrate 122 does not limits, and can be STO(strontium titanates SrTiO3).Heating evaporation source 126 makes it be evaporated on the lower surface of the unsettled substrate 122 being arranged in described low-dimensional materials preparation system 12, prepares a low-dimensional materials structure 124.Described evaporation source 126 is Fe(ferrum) source, Se(selenium) source, In(indium) source etc., described vacuum and temperature are adjusted according to actual needs.Described low-dimensional materials structure 124 can be zero dimension, one-dimensional or two-dimensional structure, such as granule, line or film, and this low-dimensional materials structure 124 can be superconducting thin film etc..In the present embodiment, described substrate 122 is the STO of 2 × 10 millimeters, and described low-dimensional materials structure 124 is FeSe thin film, the thickness of this FeSe thin film is a few nanometer, and described evaporation source 126 is Fe source and Se source, and the temperature in Fe source is about 1000 DEG C, the temperature in Se source is about 150 DEG C, and vacuum is about 1 × 10-9Torr(holds in the palm).Wherein, described substrate 122 and low-dimensional materials structure 124 form the first sample.
In step S2, in described low-dimensional materials structure 124, an electrode is set away from the part surface of substrate 122, comprises the following steps:
S21, when being pushed away the first wall 16264 of the first limitting casing 1626 by magnetic bar 1634, described first sample carrier socket 1630 due in described first opening 16260 inclined-plane 16262 and the restriction of described second opening 16282 and move up, leave mask 2 millimeters；
S22, utilize magnetic rod 134 that by low-dimensional materials preparation system 12, described first sample is sent to the first sample carrier socket 1630 of electrode evaporation intracavity in described low-dimensional materials processing system 16, specifically, described first sample is clamped by sample carrier 136, and follows sample carrier 136 and be sent on the first sample carrier socket 1630 of the evaporation intracavity of electrode in low-dimensional materials processing system 16 by magnetic rod 134；
S23, gradually loosen magnetic bar 1634, make magnetic bar 1634 away from described first limitting casing 1626, described first sample carrier socket 1630 moves down under gravity, i.e., first sample carrier socket 1630 is gradually the most close with mask so that in the first sample, low-dimensional materials structure 124 moves closer to until contacting with mask away from the part surface of substrate 122；
S24, adds thermode evaporation source 160, by described mask, electrode is deposited with the low-dimensional materials structure 124 part surface away from substrate 122.In the present embodiment, described electrode evaporation source 160 is gold, and heating-up temperature is 1000 degree, and the evaporation time is 30 minutes, and vacuum is vacuum 10-8torr。
In step S3, a micro-scored area is depicted away from the surface of substrate 122 in described low-dimensional materials structure 124, and described electrode is positioned at the detailed process of this micro-scored area: utilize magnetic rod 134 that through biography sample chamber 164, described first sample is sent to delineation by described electrode evaporation chamber and process on the second sample carrier socket 1666 of intracavity, under the observation of microscope 168, drive fine motion graver 1662, engraving needle 1664 on fine motion graver 1662 is made to delineate this low-dimensional materials structure 124 in low-dimensional materials structure 124 away from the surface of substrate 122, low-dimensional materials structure 124 is delineated a micro-scored area, and described electrode is positioned at this micro-scored area.The shape of described micro-scored area does not limits, and in the present embodiment, described micro-scored area is 100 microns is multiplied by the square of 100 microns.
In step S4, the first sample drawing process through miniature carving is sent to described transport property and measures in system 18, the electrode in described micro-scored area is made first to dock under the observation of a long focusing microscope 168 with the probe array 18030 in described measurement 180, then probe array 18030 is made slightly to remove electrode, again electrode and probe array 18030 entirety are sent in described measurement chamber 182, finally make described probe array 18030 contact described electrode, carry out the measurement of transport property.Comprise the concrete steps that:
Step S41, described draw the first sample of process through miniature carving and fixed by sample carrier 136, and be sent on the sample stage 1800 that described transport property is measured in system 18 by magnetic rod 134, this sample stage 1800 has a through hole, described first sample is fixed in this through hole, further, described low-dimensional materials structure 124 is away from probe array 18030 on described probe station 1802 of the surface of substrate 122；
Step S42, described many group piezoelectric ceramics 18028 are utilized to drive described spacing substrate 18020 and tubular substrate 18022, described displacement platform 18026 is moved along the axis direction being perpendicular to tubular substrate 18022 with the axis direction being parallel to tubular substrate 18022, described probe array 18030 moves along with the movement of displacement platform 18026, probe array 18030 is docked with the electrode in described micro-scored area, this process can a long focusing microscope 168(figure depending on) under observe and carrying out, what guarantee probe array 18030 docked with electrode is smoothed out, described docking refers to probe array 18030 and the electrode contact in described micro-scored area；
Step S43, utilizes described many group piezoelectric ceramics 18028 to drive described spacing substrate 18020, makes displacement platform 18026 slightly move away from the direction of sample stage 1800, and probe array 18030 slightly removes electrode in company with displacement platform 18026；
Step S44, utilizes magnetic rod 134 to be sent to sample stage 1800 and probe station 1802 entirety measure in chamber 182, makes the electrode in described first electrode disk 1804 dock with the electrode in the second electrode disk 1820 in measurement chamber 182；
Step S45, slightly traveling probe array 18030, the electrode making probe array 18030 and be positioned in micro-scored area docks again, namely makes probe array 18030 electrically connect away from the electrode in micro-scored area on the surface of substrate 122 with low-dimensional materials, carries out the measurement of transport property.
Described probe array 18030 is made slightly to remove electrode, again electrode and probe array 18030 entirety are sent in described measurement chamber 182, finally make described probe array 18030 contact described electrode and carry out the purpose of transport property measurement to be: make sample stage 1800 and probe station 1802 entirety will not damage probe when being sent in the measurement chamber 182 that vacuum is not visible.Described not visible referring to measure chamber 182 for airtight opaque structure, when being sent to sample stage 1800 and probe station 1802 entirety measure in chamber 182, operator can't see situation about measuring within chamber 182.
It is appreciated that and at this point it is possible to described low-dimensional materials structure 124 need not be delineated in described low-dimensional materials structure 124 away from whole surface configuration one electrode of substrate 122, directly a probe array 18030 can be contacted described electrode, carry out the measurement of transport property.
Described low-dimensional materials in situ transport property measuring method farther includes one before described low-dimensional materials structure 124 arranges electrode away from the part surface of substrate 122, and pattern and Electronic Structure to this low-dimensional materials structure 124 carry out test analysis.Detailed process is: after described low-dimensional materials are prepared in low-dimensional materials preparation system 12, magnetic rod 134 be sent to low-dimensional materials and characterize in system 14, carry out the test analysis of low-dimensional materials pattern and Electronic Structure.It it is optional step the step for of being appreciated that.
Original position transport property measurement apparatus 10 and original position transport property measuring method that the present invention provides have the advantage that first, the original position transport property measurement apparatus 10 that the present invention provides is by by low-dimensional materials preparation system 12, low-dimensional materials processing system 16 and transport property are measured system 18 and are connected by magnetic rod 134, and to keep this whole device be vacuum environment, described low-dimensional materials are in invariable vacuum environment during being prepared into measurement transport property, ensure that low-dimensional materials do not result in pollution, the transport property of low-dimensional materials intrinsic can be recorded, improve the accuracy of transport property measuring method in situ；Second, the setting in described electrode evaporation chamber 162, can be at low-dimensional materials away from the surface electrode evaporation of substrate 122, and then by the way of electrode contacts, measure the transport property of low-dimensional materials with probe array 18030, measure compared with transport property with prior art utilizing probe directly contact low-dimensional materials, the transport property of low-dimensional materials is measured with probe array 18030 by the way of electrode contacts, it is possible not only to avoid low-dimensional materials to be destroyed by probe array 18030, and electrode is effective with what probe array 18030 made electrical contact with, the sensitivity that transport property is measured can be improved；3rd, the first sample carrier socket the 1630, second limitting casing the 1628, first limitting casing 1626 and set-up mode of magnetic bar 1634 in described electrode evaporation chamber 162 so that low-dimensional materials will not be destroyed when low-dimensional materials are away from the surface electrode evaporation of substrate 122；4th, described delineation processes the setting in chamber 166, make described low-dimensional materials before carrying out transport property measurement, first delineate out by the micro-scored area residing for electrode, also will the other parts isolation of this micro-scored area and low-dimensional materials, the measurement that can make the transport property of the low-dimensional materials of this micro-scored area is interference-free, improves the accuracy that transport property is measured；5th, described sample stage 1800 and the setting of probe station 1802, when low-dimensional materials can be made to be transferred into measurement chamber 182, probe array 18030 will not destroy low-dimensional materials；6th, described measurement 180, the setting in measurement chamber 182, can make the measurement of low-dimensional materials transport property carry out under extremely low temperature high-intensity magnetic field, expand the research field of low-dimensional materials.
It addition, those skilled in the art also can do other changes, certainly, these changes done according to present invention spirit in spirit of the present invention, within all should being included in scope of the present invention.
Claims (10)
1. an original position transport property measuring method, comprises the following steps:
In one first vacuum environment, a substrate is prepared a membrane structure；
In one second vacuum environment, at this membrane structure away from surface configuration one electrode of substrate, and drawing process at described membrane structure away from carrying out miniature carving on the surface of substrate, depict a micro-scored area, described electrode is positioned at this micro-scored area；And
In one the 3rd vacuum environment, by electrode described in a probe array contacts, measure the transport property of this membrane structure,
Wherein, described first vacuum environment, the second vacuum environment, the 3rd vacuum environment are a continuous print vacuum environment.
2. transport property measuring method in situ as claimed in claim 1, it is characterised in that utilize multiple magnetic rod to transmit described membrane structure in described first vacuum environment, the second vacuum environment, the 3rd vacuum environment.
3. transport property measuring method in situ as claimed in claim 2, it is characterised in that providing an original position transport property to measure system, this original position transport property is measured system and included a low-dimensional materials preparation system, is used for preparing described membrane structure；One low-dimensional materials processing system, at membrane structure surface configuration electrode with carry out miniature carving and draw process；And one transport property measure system, for measuring the transport property of membrane structure, the plurality of magnetic rod is used for transmitting described membrane structure between described low-dimensional materials preparation system, low-dimensional materials processing system and transport property measurement system, and described original position transport property measurement system is vacuum environment.
4. transport property measuring method in situ as claimed in claim 1, it is characterised in that at described membrane structure away from surface configuration one electrode of substrate, comprise the following steps:
Make described membrane structure close until described membrane structure contacts with this mask away from the surface of substrate to a mask under the effect of self gravitation；And
Heat an electrode evaporation source, electrode is deposited with the membrane structure surface away from substrate.
5. transport property measuring method in situ as claimed in claim 4, it is characterised in that make described membrane structure rely on self gravitation near this mask apart from the position of described mask 2 millimeters.
6. transport property measuring method in situ as claimed in claim 1, it is characterized in that, a micro-scored area is depicted away from the surface of substrate at described membrane structure, and described electrode is positioned at the method for this micro-scored area: under a microscopical observation, drive a fine motion graver being provided with engraving needle, make described engraving needle delineate this membrane structure at membrane structure away from the surface of substrate, membrane structure is delineated a micro-scored area, and described electrode is positioned at this micro-scored area.
7. transport property measuring method in situ as claimed in claim 3, it is characterised in that electrode described in probe array contacts is carried out the measurement of transport property, comprises the following steps:
Described transport property is measured system and is included that a measurement head and measures chamber, this measurement head includes a probe array, the membrane structure and electrode of drawing process through miniature carving are sent in described transport property measurement system, the electrode in described micro-scored area is made first to dock with the probe array on described measurement head, then probe array is made slightly to remove electrode, again electrode and probe array entirety are sent in described measurement chamber, finally make electrode described in described probe array contacts, carry out the measurement of transport property.
8. transport property measuring method in situ as claimed in claim 7, it is characterized in that, under a microscopical observation, make described probe array and described electrode contact, then make probe array slightly remove electrode, finally electrode and probe array entirety are sent in a vacuum environment.
9. transport property measuring method in situ as claimed in claim 1, it is characterised in that farther included the pattern of a pair this membrane structure before described membrane structure is away from the surface configuration electrode of substrate and Electronic Structure carries out the step of test analysis.
10. an original position transport property measuring method, comprises the following steps:
There is provided a low-dimensional materials preparation system, for preparation one membrane structure；
One low-dimensional materials processing system is provided, for the surface configuration electrode at described membrane structure, and delineates this membrane structure, make electrode be in a micro-scored area；And
A transport property is provided to measure system, for measuring the transport property of described membrane structure；
Described low-dimensional materials preparation system is connected by magnetic rod with low-dimensional materials processing system, described low-dimensional materials processing system and transport property are measured system and are connected by magnetic rod, and are a continuous print vacuum environment in described low-dimensional materials preparation system, low-dimensional materials processing system, transport property measurement system and magnetic rod.
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