CN204719148U - Transport property measuring system - Google Patents
Transport property measuring system Download PDFInfo
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- CN204719148U CN204719148U CN201520219327.8U CN201520219327U CN204719148U CN 204719148 U CN204719148 U CN 204719148U CN 201520219327 U CN201520219327 U CN 201520219327U CN 204719148 U CN204719148 U CN 204719148U
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Abstract
A kind of transport property measuring system, comprise a measuring head and and measure chamber, described measuring head comprises a sample stage, a probe station and one first electrode disk, described probe station is between described sample stage and the first electrode disk, have one second electrode disk in described measurement chamber, described first electrode disk and the second electrode disk have electrode one to one.The utility model relates to the measurement mechanism that utilizes the original position transport property of described transport property measuring system further.
Description
Technical field
The utility model relates to a kind of transport property measuring system.
Background technology
Low-dimensional quantum material is one of field that physics research content is the abundantest.The two-dimensional electron gas of heterogeneous semiconductor junction interface, Graphene, copper base and iron-based superconductor, topological insulator, oxide interface and Transition-metal dichalcogenide stratified material etc. all belong to this kind of system.These systems present some the most magical quantum states of occurring in nature, relate to the important scientific problems that Condensed Matter Physics is main, it is the crucial system of the sub-related question of forceful electric power disclosing the challenge of low dimensional physics most, they probably still cause a class system of the technology significant innovations such as Future Information, clean energy resource, electric power and precision measurement or even revolution, are current global research emphasis.
For the research of this kind of system, not only need accurate laboratory facilities, be more importantly, because they all can refine physically, to be reduced to thickness be one to the accurate two-dimensional system of several atomic layer/unit primitive unit cell, generally directly cannot study under air ambient, need the low-dimensional materials grown in vacuum environment to take out vacuum system, then put in measuring system and measure.The measuring system of prior art under visibility status, by probe and low-dimensional materials electrical contact, to carry out the measurement of transport property to these low-dimensional materials, can only limit the range of application of this measuring system.
Utility model content
In view of this, necessary a kind of non-visibility status is provided under probe array and the electrical contact of low-dimensional materials structure can be made to measure the transport property measuring system of low-dimensional materials structure transport property.
A kind of transport property measuring system, comprise a measuring head and and measure chamber, described measuring head comprises a sample stage, a probe station and one first electrode disk, described probe station is between described sample stage and the first electrode disk, have one second electrode disk in described measurement chamber, described first electrode disk and the second electrode disk have electrode one to one.
Compared with prior art, in the transport property measuring system that the utility model provides, the first electrode disk in measuring head and the second electrode disk measured in chamber have electrode one to one, and probe station can move in space so that the electrode contact in the probe array in probe station and sample stage.Therefore, after can first making probe array contact with electrode alignment, then probe array is made slightly to remove electrode, again electrode and probe array entirety are sent in described measurement chamber, finally make electrode described in described probe array contacts carry out transport property measurement, thus under non-visibility status, probe array and the electrical contact of low-dimensional materials structure can be made, measure the transport property of this low-dimensional materials structure, expand the range of application of transport property measuring system further.
Accompanying drawing explanation
Fig. 1 is the structural representation of the spatial structure of original position transport property measurement mechanism.
Fig. 2 is the cross-sectional view of low-dimensional materials preparation system.
Fig. 3 is the structural representation of the spatial structure of low-dimensional materials disposal system.
Fig. 4 is the spatial structure exploded view of inside, electrode evaporation chamber in low-dimensional materials disposal system.
Fig. 5 delineates process chamber inside and microscopical perspective view in low-dimensional materials disposal system.
Fig. 6 is the spatial structure decomposing schematic representation of transport property measuring system.
Fig. 7 is the cross-sectional view of transport property measuring system middle probe platform.
Fig. 8 is the process flow diagram of low-dimensional materials original position transport property measuring method.
Main element symbol description
Original position transport property measurement mechanism 10
First connecting pipe 20
Second connecting pipe 22
3rd connecting pipe 24
Low-dimensional materials preparation system 12
Reaction chamber 120
Substrate 122
Low-dimensional materials structure 124
Evaporation source 126
Vacuum pump 128
Vacuum gauge 130
Fast sample chamber 132
Magnetic rod 134
Sample carrier 136
Cantilever lever 138
Low-dimensional materials characterization system 14
Low-dimensional materials disposal system 16
Electrode evaporation source 160
Electrode deposition unit 162
End flange 1620
Support bar 1622
Brace table 1624
First limitting casing 1626
First opening 16260
Inclined-plane 16262
First wall 16264
Second limitting casing 1628
Second opening 16282
First sample carrier socket 1630
Convex excellent 1632
Magnetic bar 1634
Pass sample chamber 164
Delineation processing unit 166
Top flange 1660
Fine motion graver 1662
Engraving needle 1664
Second sample carrier socket 1666
Microscope 168
Transport property measuring system 18
Measuring head 180
Sample stage 1800
Probe station 1802
Spacing substrate 18020
Tubular substrate 18022
Diapire 18024
Displacement platform 18026
First displacement body 18026a
Second displacement body 18026b
Piezoelectric ceramics 18028
Probe array 18030
First electrode disk 1804
Measure chamber 182
Second electrode disk 1820
Following embodiment will further illustrate the utility model in conjunction with above-mentioned accompanying drawing.
Embodiment
Below in conjunction with the accompanying drawings and the specific embodiments the original position transport property measurement mechanism that the utility model provides is described in further detail.
Refer to Fig. 1, the utility model provides a kind of original position transport property measurement mechanism 10, comprises low-dimensional materials preparation system 12, low-dimensional materials characterization system 14, low-dimensional materials disposal system 16 and a transport property measuring system 18.Described low-dimensional materials preparation system 12 is connected with low-dimensional materials characterization system 14 by the first connecting pipe 20, described low-dimensional materials preparation system 12 is connected with low-dimensional materials disposal system 16 by the second connecting pipe 22, and described low-dimensional materials disposal system 16 is connected with transport property measuring system 18 by the 3rd connecting pipe 24.Be appreciated that the first connecting pipe 20, second connecting pipe 22, the 3rd connecting pipe 24 and low-dimensional materials preparation system 12, low-dimensional materials characterization system 14, between low-dimensional materials disposal system 16 and transport property measuring system 18, all pass through Flange joint.
Low-dimensional materials are prepared in the effect of described low-dimensional materials preparation system 12, described low-dimensional materials characterization system 14 carries out test analysis to low-dimensional materials pattern and Electronic Structure, described low-dimensional materials disposal system 16 arranges electrode on the surface of low-dimensional materials and this electrode miniature carving marked, and described transport property measuring system 18 measures the transport property of these low-dimensional materials.Arrange multiple magnetic rod 134 in described low-dimensional materials preparation system 12, low-dimensional materials characterization system 14, low-dimensional materials disposal system 16 and transport property measuring system 18, the plurality of magnetic rod 134 is at low-dimensional materials preparation system 12, low-dimensional materials characterization system 14, transmit sample between low-dimensional materials disposal system 16 and transport property measuring system 18.Described original position transport property measurement mechanism 10 is vacuum environment, and multiple magnetic rod 134 low-dimensional materials preparation system 12, low-dimensional materials characterization system 14, transmit sample between low-dimensional materials disposal system 16 and transport property measuring system 18 process in also keep vacuum environment.Described vacuum environment can vacuumize realization by vacuum pump 128.Be appreciated that, described low-dimensional materials preparation system 12, low-dimensional materials characterization system 14, all realize being connected between two by a connecting pipe and flange between low-dimensional materials disposal system 16 and transport property measuring system 18, this four systems freely can transmit sample by described magnetic rod 134.
The utility model only illustrates the set-up mode of magnetic rod 134 for low-dimensional materials preparation system 12, the mode arranging magnetic rod 134 in low-dimensional materials characterization system 14, low-dimensional materials disposal system 16 and transport property measuring system 18 is similar, repeats no more here.
Refer to Fig. 2, described low-dimensional materials preparation system 12 comprises reaction chamber 120, cantilever lever 138, evaporation source 126, vacuum pump 128, magnetic rod 134 and a fast sample chamber 132.Described low-dimensional materials preparation system 12 in use, also comprises a substrate 122.Described cantilever lever 138 has opposite end, and reaction chamber 120 inwall is fixed in one end, and the other end is used for fixing described substrate 122.Described multiple evaporation source 126 is connected with reaction chamber 120, and interval is just to substrate 122.Particularly, described substrate 122 has relative upper surface and lower surface, and this substrate 122 upper surface is connected to the upper side wall of reaction chamber 120 by described cantilever lever 138.Described multiple evaporation source 126 interval is just to the lower surface of substrate 122.Described vacuum pump 128 is connected with described reaction chamber 120, makes to be vacuum environment in reaction chamber 120.One end of described magnetic rod 134 is provided with sample carrier 136 and stretches in described reaction chamber 120, the other end of described magnetic rod 134 is stayed outside reaction chamber 120, to operate this magnetic rod 134, make this magnetic rod 134 that sample carrier 136 can be driven to move or described sample carrier 136 is rotated around magnetic rod 134.Described fast sample chamber 132 is connected with reaction chamber 120, before being convenient to reaction, reaction chamber 120 is put in substrate 122, and is fixed in described cantilever lever 138.
Further, described low-dimensional materials preparation system 12 can also comprise a vacuum gauge 130, and this vacuum gauge 130 is connected with described reaction chamber 120, for measuring the vacuum tightness of reaction chamber 120.And this low-dimensional materials preparation system 12 can also arrange a visual window (drafting), to observe the preparation of low-dimensional materials.Described low-dimensional materials preparation system 12 comprises an opening (drafting) further, so that this low-dimensional materials preparation system 12 passes through Flange joint with described first connecting pipe 20.Described evaporation source 126, vacuum pump 128, vacuum gauge 130 and magnetic rod 134 is Flange joint with the connection of reaction chamber 120.In the present embodiment, described low-dimensional materials preparation system 12 is molecular beam epitaxy (MBE) growing system.
After described low-dimensional materials are prepared in low-dimensional materials preparation system 12, be sent in low-dimensional materials characterization system 14 by described magnetic rod 134, after carrying out the test analysis of low-dimensional materials pattern and Electronic Structure, and then by described magnetic rod 134, be sent to low-dimensional materials disposal system 16 by low-dimensional materials characterization system 14.This low-dimensional materials characterization system 14 is vacuum environment.The kind of described low-dimensional materials characterization system 14 is not limit, as long as the environment characterized is vacuum.In the present embodiment, described low-dimensional materials characterization system 14 is scanning tunnel microscope (STM) 168.Be appreciated that described low-dimensional materials characterization system 14 is optional system, can omit.
Refer to Fig. 3 and Fig. 4, described low-dimensional materials disposal system 16 comprises electrode evaporation source 160, electrode deposition unit 162, and passes sample chamber 164, delineation processing unit 166 and a microscope 168.Described electrode deposition unit 162 comprises an electrode evaporation chamber, and this electrode evaporation chamber has relative two ends, and one end is connected to described biography sample chamber 164, and the other end is connected with described electrode evaporation source 160.Described delineation processing unit 166 comprises a delineation process chamber, and this delineation process chamber has one end, and this one end is connected to described biography sample chamber 164.Described delineation process chamber has an observation window (not shown), and described microscope 168 is positioned at the outside of described delineation process chamber, can by the delineation of this observation window observation delineation process chamber internal electrode measured zone.Preferably, described microscope 168 is positioned at the bottom outside of delineation process chamber.Described electrode evaporation chamber, biography sample chamber 164 and delineation process chamber are vacuum environment, by vacuumizing realization.Described connection all refers to Flange joint.
Described electrode deposition unit 162 comprises an end flange 1620, at least two support bar 1622, brace table 1624,1 first limitting casing 1626,1 second limitting casing 1628,1 first sample carrier sockets 1630 and a magnetic bar 1634 further.Flange of the described end 1620 is connected with the bottom in described electrode evaporation chamber, to close the bottom in this electrode evaporation chamber, described electrode evaporation source 160 is connected to this electrode evaporation chamber by this end flange 1620.Described at least two support bars 1622, brace table 1624, first limitting casing 1626, second limitting casing 1628, first sample carrier socket 1630 and magnetic bar 1634 are all arranged at the inside in this electrode evaporation chamber.
Described brace table 1624 is connected on flange of the described end 1620 by least two support bars 1622.This brace table 1624 has one first through hole, and a mask tiling is arranged on the first through hole of this brace table 1624, and lower surface and the described electrode evaporation source 160 of this mask are just right.
Described first limitting casing 1626, second limitting casing 1628 and the first sample carrier socket 1630 are arranged on described brace table 1624.Described first sample carrier socket 1630 has relative two convex excellent 1632, and the effect of this first sample carrier socket 1630 is fixing described sample carriers 136, further fixing described low-dimensional materials.Described second limitting casing 1628 has two relative sidewalls, and these two relative sidewalls have one second opening 16282 respectively.This second opening 16282 have relative two with the side of horizontal plane.Described first sample carrier socket 1630 is arranged in the frame of described second limitting casing 1628, and described two convex excellent 1632 extend from described two the second openings 16282 respectively.Sheathed described first limitting casing 1626 in surface of described second limitting casing 1628, this first limitting casing 1626 has two relative sidewalls, these two relative sidewalls has one first opening 16260 respectively, this first opening 16260 has one and surface level inclined-plane 16262 at angle, and described two convex excellent 1632 are extended two the first openings 16260 respectively.That is, first limitting casing 1626 is set in the outside of the second limitting casing 1628, first sample carrier socket 1630 is positioned at the frame of the second limitting casing 1628, and on the first sample carrier socket 1630 two convex excellent 1632 through described first opening 16260 and the second opening 16282 to frame extension.
Described magnetic bar 1634 is connected with described electrode evaporation chamber, and and the first wall 16264 interval in described first limitting casing 1626 or directly contact, this first wall 16264 is adjacent with the described sidewall being provided with the first opening 16260, and this first wall 16264 is near described inclined-plane 16262.When this magnetic bar 1634 pushes away the first wall 16264 of the first limitting casing 1626, described first sample carrier socket 1630 moves up due to the restriction of inclined-plane 16262 and described second opening 16282 in described first opening 16260; When recalling this magnetic bar 1634, when making magnetic bar 1634 away from described first limitting casing 1626, described first sample carrier socket 1630 moves down under gravity.That is, described first position of sample carrier socket 1630 under gravity to mask is close.
Refer to Fig. 5, described delineation processing unit 166 comprises top flange 1660, fine motion graver 1662 and an one second sample carrier socket 1666 further.Described delineation process chamber is connected with described biography sample chamber 164 by described top flange 1660.It is inner that described fine motion graver 1662 and the second sample carrier socket 1666 are positioned at this delineation process chamber, and be individually fixed on described top flange 1660.The effect of described second sample carrier socket is fixing described sample carrier 136, thus fixing described low-dimensional materials.Described fine motion graver 1662 has an engraving needle 1664, and this fine motion graver 1662 can be driven by piezoelectric ceramics 18028, under the observation of described microscope 168, utilizes engraving needle 1664 delineation of electrode measurement region to be isolated.
Refer to Fig. 6 and Fig. 7, described transport property measuring system 18 comprises a measuring head 180 and and measures chamber 182, described measuring head 180 comprises sample stage 1800, probe station 1802 and one first electrode disk 1804 overlaps, and described probe station 1802 is between described sample stage 1800 and described first electrode disk 1804.The bottom of inside, described measurement chamber 182 has one second electrode disk 1820, and described first electrode disk 1804 and the second electrode disk 1820 have electrode one to one.Described measurement chamber 182 is vacuum environment and is low temperature environment, preferably, can be vacuum, pole low temperature strong magnetic field circumstance.In the present embodiment, described measurement chamber 182 is pole low temperature high-intensity magnetic field Dewar.The method that described sample stage 1800, probe station 1802 and the first electrode disk 1804 are set together is not limit, in the present embodiment, described sample stage 1800, probe station 1802 and the first electrode disk 1804 are fixed together by support column and screw (not shown).
Described sample stage 1800 can fix described sample carrier 136, and described sample carrier 136 is for clamped sample.Described sample is the low-dimensional materials structure 124 be arranged in substrate 122, and the surface away from substrate 122 of low-dimensional materials structure 124 is provided with electrode, and electrode is positioned at a miniature carving partition.Described low-dimensional materials structure 124 refers to zero dimension, one dimension or two-dimensional structure.
Described probe station 1802 comprises spacing substrate 18020, tubular substrate 18022 and a displacement platform 18026.The shape of described displacement platform 18026 is T-shaped, particularly, this displacement platform 18026 is made up of one first displacement body 18026a and one second displacement body 18026b, this second displacement body 18026b has relative two ends, the centre of described first displacement body 18026a is connected with one end of the second displacement body 18026b, to be formed T-shaped, the other end of described second displacement body 18026b arranges a probe array 18030.Preferably, the centre of described first displacement body 18026a and one end of the second displacement body 18026b link into an integrated entity one-body moldedly.The diapire 18024 of described tubular substrate 18022 has a fourth hole, tubular substrate 18022 inside is stretched into through this fourth hole in one end that described second displacement body 18026b arranges probe array 18030, and described first displacement body 18026a is positioned at the outside of the diapire 18024 of tubular substrate 18022.Also be, defining described diapire 18024 away from the side of the inside of tubular substrate 18022 is outside, tubular substrate 18022 inside is stretched into through this fourth hole in one end that described second displacement body 18026b arranges probe array 18030, and the other end of described second displacement body 18026b stays the outside of described diapire 18024.Described spacing substrate 18020 is positioned at the side of the first displacement body 18026a away from tubular substrate 18022, and and this first displacement body 18026a interval arrange.Described spacing substrate 18020 is near the surface of the first displacement body 18026a away from tubular substrate 18022.Described spacing substrate 18020 all arranges multiple piezoelectric ceramics 18028 near the diapire 18024 of the surface of the first displacement body 18026a and described tubular substrate 18022 near the surface of the first displacement body 18026a, and the plurality of piezoelectric ceramics 18028 can move along the axis direction perpendicular to tubular substrate 18022 by drive displacement platform 18026.The madial wall of described tubular substrate 18022 arranges multiple piezoelectric ceramics 18028, and the plurality of piezoelectric ceramics 18028 can move along the axis direction of tubular substrate 18022 by drive displacement platform 18026.Described probe array 18030 moves along with the movement of displacement platform 18026, so as with the electrode contact of described miniature carving partition, namely realize probe array 18030 and be electrically connected with electrode.Described probe array 18030 is made up of four probes.
Refer to Fig. 8, the utility model provides a kind of low-dimensional materials original position transport property measuring method further, comprises the following steps:
S1, under vacuum environment, a substrate 122 is prepared a low-dimensional materials structure 124;
S2, under vacuum environment, arranges an electrode in described low-dimensional materials structure 124 away from the part surface of substrate 122;
S3, under vacuum environment, described low-dimensional materials structure 124 depicts a micro-scored area, and described electrode is positioned at this micro-scored area;
S4, under vacuum environment, contacts described electrode by a probe array 18030, carries out the measurement of transport property.
In step S1, the material of described substrate 122 is not limit, and can be STO (strontium titanates SrTiO
3).Heating evaporation source 126 makes, on its lower surface being evaporated to the unsettled substrate 122 be arranged in described low-dimensional materials preparation system 12, to prepare a low-dimensional materials structure 124.Described evaporation source 126 is Fe (iron) source, Se (selenium) source, In (indium) source etc., and described vacuum tightness and temperature adjust according to actual needs.Described low-dimensional materials structure 124 can be zero dimension, one dimension or two dimension, such as particle, line or film, and this low-dimensional materials structure 124 can be superconducting thin film etc.In the present embodiment, described substrate 122 is the STO of 2 × 10 millimeters, and described low-dimensional materials structure 124 is FeSe film, the thickness of this FeSe film is a few nanometer, and described evaporation source 126 is Fe source and Se source, and the temperature in Fe source is about 1000 DEG C, the temperature in Se source is about 150 DEG C, and vacuum tightness is about 1 × 10
-9torr (holder).Wherein, described substrate 122 and low-dimensional materials structure 124 form the first sample.
In step S2, in described low-dimensional materials structure 124, an electrode is set away from the part surface of substrate 122, comprises the following steps:
S21, when pushing away the first wall 16264 of the first limitting casing 1626 by magnetic bar 1634, described first sample carrier socket 1630 moves up due to the restriction of inclined-plane 16262 and described second opening 16282 in described first opening 16260, leaves mask 2 millimeters;
S22, utilize magnetic rod 134 that described first sample is sent to the first sample carrier socket 1630 in described low-dimensional materials disposal system 16 in electrode evaporation chamber by low-dimensional materials preparation system 12, particularly, described first sample is clamped by sample carrier 136, and follows sample carrier 136 and be sent on the first sample carrier socket 1630 in low-dimensional materials disposal system 16 in electrode evaporation chamber by magnetic rod 134;
S23, loosen magnetic bar 1634 gradually, make magnetic bar 1634 away from described first limitting casing 1626, described first sample carrier socket 1630 moves down under gravity, namely, first sample carrier socket 1630 is close with mask gradually under gravity, makes low-dimensional materials structure 124 in the first sample close until contact gradually with mask away from the part surface of substrate 122;
S24, heating electrode evaporation source 160, by described mask by electrode evaporation to the part surface of low-dimensional materials structure 124 away from substrate 122.In the present embodiment, described electrode evaporation source 160 is gold, and heating-up temperature is 1000 degree, and the evaporation time is 30 minutes, and vacuum tightness is vacuum tightness 10
-8torr.
In step S3, a micro-scored area is depicted away from the surface of substrate 122 in described low-dimensional materials structure 124, and the detailed process that described electrode is positioned at this micro-scored area is: utilize magnetic rod 134 to be sent to second sample carrier socket 1666 of delineation process chamber on by described electrode evaporation chamber through passing sample chamber 164 by described first sample, under the observation of microscope 168, drive fine motion graver 1662, the engraving needle 1664 on fine motion graver 1662 is made to delineate this low-dimensional materials structure 124 in low-dimensional materials structure 124 away from the surface of substrate 122, low-dimensional materials structure 124 delineates a micro-scored area, and described electrode is positioned at this micro-scored area.The shape of described micro-scored area is not limit, and in the present embodiment, described micro-scored area is 100 microns of squares being multiplied by 100 microns.
In step S4, the first sample drawing process through miniature carving is sent in described transport property measuring system 18, electrode in described micro-scored area is first docked under the observation of a focal length microscope 168 with the probe array 18030 on described measuring head 180, then probe array 18030 is made slightly to remove electrode, again electrode and probe array 18030 entirety are sent in described measurement chamber 182, finally make described probe array 18030 contact described electrode, carry out the measurement of transport property.Concrete steps are:
Step S41, described the first sample drawing process through miniature carving is fixed by sample carrier 136, and be sent on the sample stage 1800 in described transport property measuring system 18 by magnetic rod 134, this sample stage 1800 has a through hole, described first sample is fixed in this through hole, further, described low-dimensional materials structure 124 is away from the probe array 18030 of surface on described probe station 1802 of substrate 122;
Step S42, described many group piezoelectric ceramics 18028 are utilized to drive described spacing substrate 18020 and tubular substrate 18022, described displacement platform 18026 is moved along the axis direction perpendicular to tubular substrate 18022 with the axis direction being parallel to tubular substrate 18022, described probe array 18030 moves along with the movement of displacement platform 18026, probe array 18030 is docked with the electrode in described micro-scored area, this process can be observed and carrying out under focal length microscope 168 (not shown), and what guarantee probe array 18030 docked with electrode carries out smoothly;
Step S43, utilize described many group piezoelectric ceramics 18028 to drive described spacing substrate 18020, displacement platform 18026 is moved slightly towards the direction away from sample stage 1800, and probe array 18030 removes electrode slightly in company with displacement platform 18026;
Step S44, utilizes magnetic rod 134 sample stage 1800 and probe station 1802 entirety to be sent to and measures in chamber 182, and the electrode in described first electrode disk 1804 is docked with the electrode measured in chamber 182 in second electrode disk 1820;
Step S45, traveling probe array 18030 slightly, probe array 18030 is docked again with the electrode being arranged in micro-scored area, namely makes probe array 18030 be electrically connected away from the electrode in micro-scored area on the surface of substrate 122 with low-dimensional materials, carry out the measurement of transport property.
The described probe array 18030 that makes removes electrode slightly, electrode and probe array 18030 entirety are sent in described measurement chamber 182, object that described electrode carries out transport property measurement is finally to make described probe array 18030 contact: can not damage probe when sample stage 1800 and probe station 1802 entirety are sent in the not visible measurement chamber 182 of vacuum again.Described not visible referring to measures chamber 182 for airtight opaque structure, and when sample stage 1800 and probe station 1802 entirety being sent in measurement chamber 182, operator can't see the situation measuring inside, chamber 182.
Be appreciated that and in described low-dimensional materials structure 124, an electrode can be set away from the whole surface of substrate 122, now, described low-dimensional materials structure 124 can be delineated, directly a probe array 18030 be contacted described electrode, carry out the measurement of transport property.
Described low-dimensional materials original position transport property measuring method comprised one further before described low-dimensional materials structure 124 arranges electrode away from the part surface of substrate 122, carried out test analysis to the pattern of this low-dimensional materials structure 124 and Electronic Structure.Detailed process is: after described low-dimensional materials are prepared in low-dimensional materials preparation system 12, is sent in low-dimensional materials characterization system 14, carries out the test analysis of low-dimensional materials pattern and Electronic Structure by magnetic rod 134.Be appreciated that this step is optional step.
The original position transport property measurement mechanism 10 that the utility model provides has the following advantages: the original position transport property measurement mechanism 10 that the first, the utility model provides passes through low-dimensional materials preparation system 12, low-dimensional materials disposal system 16 to be connected by magnetic rod 134 with transport property measuring system 18, and keep this whole device to be vacuum environment, described low-dimensional materials are made all to be in invariable vacuum environment from the process being prepared into measurement transport property, ensure that low-dimensional materials can not pollute, the transport property of the most intrinsic of low-dimensional materials can be recorded, second, the setting of described electrode deposition unit 162, can at the surperficial electrode evaporation of low-dimensional materials away from substrate 122, and then the transport property of low-dimensional materials is measured by the mode that electrode contacts with probe array 18030, directly contacting low-dimensional materials with utilizing probe in prior art measures compared with transport property, the mode contacted with probe array 18030 by electrode measures the transport property of low-dimensional materials, low-dimensional materials not only can be avoided to be destroyed by probe array 18030, and electrode and probe array 18030 electrical contact is effective, the sensitivity that transport property is measured can be improved, three, the set-up mode of the first sample carrier socket 1630, second limitting casing 1628, first limitting casing 1626 and magnetic bar 1634 in described electrode evaporation chamber, makes can not destroy low-dimensional materials when the surperficial electrode evaporation of low-dimensional materials away from substrate 122, four, the setting of described delineation processing unit 166, make described low-dimensional materials before carrying out transport property measurement, first the micro-scored area residing for electrode is delineated out, also the other parts by this micro-scored area and low-dimensional materials are isolated, the measurement of the transport property of the low-dimensional materials of this micro-scored area can be made interference-free, improve the accuracy that transport property is measured, five, the setting of described sample stage 1800 and probe station 1802, when low-dimensional materials can be made to be transferred into measurement chamber 182, probe array 18030 can not destroy low-dimensional materials, six, the setting in described measuring head 180, measurement chamber 182, can make the measurement of low-dimensional materials transport property carry out under the low temperature high-intensity magnetic field of pole, expand the research field of low-dimensional materials, seven, described transport property measuring system under non-visibility status, can make probe array and the electrical contact of low-dimensional materials structure, to measure the transport property of this low-dimensional materials structure, expands the range of application of transport property measuring system further.
In addition, those skilled in the art also can do other changes in the utility model spirit, and certainly, these changes done according to the utility model spirit, all should be included within the utility model scope required for protection.
Claims (10)
1. a transport property measuring system, comprise a measuring head and and measure chamber, it is characterized in that, described measuring head comprises a sample stage, a probe station and one first electrode disk, described probe station is between described sample stage and the first electrode disk, have one second electrode disk in described measurement chamber, described first electrode disk and the second electrode disk have electrode one to one.
2. transport property measuring system as claimed in claim 1, it is characterized in that, described measurement chamber is vacuum environment.
3. transport property measuring system as claimed in claim 1, is characterized in that, described second electrode disk is positioned at the bottom measuring chamber.
4. transport property measuring system as claimed in claim 1, it is characterized in that, the displacement platform that described probe station comprises a spacing substrate, a tubular substrate and is provided with probe array, described spacing substrate and tubular substrate are used for described displacement platform is moved, and described probe array is moved.
5. transport property measuring system as claimed in claim 4, it is characterized in that, described displacement platform is made up of one first displacement body and one second displacement body, this second displacement body has relative two ends, the centre of described first displacement body is connected with one end of the second displacement body, and the other end of described second displacement body arranges described probe array.
6. transport property measuring system as claimed in claim 5, it is characterized in that, described tubular substrate has a diapire, this diapire has a fourth hole, and to define this diapire away from the side of the inside of tubular substrate be outside, tubular base internal is stretched into through this fourth hole in one end that described second displacement body arranges probe array, and the other end of described second displacement body stays the outside of described diapire.
7. transport property measuring system as claimed in claim 6, it is characterized in that, described spacing substrate is positioned at the side of the first displacement body away from tubular substrate, and and this first displacement body interval arrange.
8. transport property measuring system as claimed in claim 7, it is characterized in that, described spacing substrate all arranges multiple piezoelectric ceramics near the diapire of the surface of the first displacement body and described tubular substrate near the surface of the first displacement body, and described in the plurality of Piezoelectric Ceramic, displacement platform moves along the axis direction perpendicular to tubular substrate.
9. transport property measuring system as claimed in claim 7, it is characterized in that, the madial wall of described tubular substrate arranges multiple piezoelectric ceramics, and described in the plurality of Piezoelectric Ceramic, displacement platform moves along the axis direction of tubular substrate.
10. transport property measuring system as claimed in claim 1, it is characterized in that, described measurement chamber is airtight and opaque.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520219327.8U CN204719148U (en) | 2015-04-13 | 2015-04-13 | Transport property measuring system |
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|---|---|---|---|
| CN201520219327.8U CN204719148U (en) | 2015-04-13 | 2015-04-13 | Transport property measuring system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104749470A (en) * | 2015-04-13 | 2015-07-01 | 清华大学 | Transport property measuring system |
| CN108504992A (en) * | 2018-06-12 | 2018-09-07 | 清华大学 | Electrode evaporation coating device |
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2015
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104749470A (en) * | 2015-04-13 | 2015-07-01 | 清华大学 | Transport property measuring system |
| CN104749470B (en) * | 2015-04-13 | 2017-08-11 | 清华大学 | Transport property measuring system |
| CN108504992A (en) * | 2018-06-12 | 2018-09-07 | 清华大学 | Electrode evaporation coating device |
| CN108504992B (en) * | 2018-06-12 | 2023-10-03 | 清华大学 | Electrode vapor deposition device |
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