CN106711324A - Magnetic multilayer film structure development method - Google Patents
Magnetic multilayer film structure development method Download PDFInfo
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- CN106711324A CN106711324A CN201611024304.7A CN201611024304A CN106711324A CN 106711324 A CN106711324 A CN 106711324A CN 201611024304 A CN201611024304 A CN 201611024304A CN 106711324 A CN106711324 A CN 106711324A
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- magnetic
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- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
Abstract
The invention relates to a magnetic multilayer film structure development method. In a vacuum environment, deposition of a magnetic multilayer film structure, real-time and in-situ magnetic characterization and interface regulation and control are integrated. The method has five steps of step1, carrying out magnetic multilayer film customization manufacturing parameter calibration; step2, carrying out film deposition, and according to a demand, carrying out interface regulation and control; step3, researching an interface regulation and control effect; step4, researching a specific function layer effect; and step5, carrying out magnetic multilayer-film magnetic property customization development. By using the method of the invention, continuous, interactive and rapid operation of magnetic multilayer film deposition, characterization and regulation and control can be realized; the above steps are performed in a high vacuum environment so that conditions that a sample is polluted, absorbs water and is oxidized are avoided; and accurate customization of a magnetic multilayer-film magnetic property can be realized.
Description
Technical field
The present invention relates to a kind of magnetic multilayer film structure method of production, it contains the deposition of magnetic multilayer film structure, real
When, magnetic characterization in situ and interface regulation and control.Belong to spinning electron subject basic research technical field.
Background technology
Spinning electron technology is widely regarded as breaking through the pass of electron trade " mole epoch afterwards " this bottleneck problem of power consumption
One of key technology, has developed high frequency spinning microwave device on spin sensor, non-volatile magnetic random memory, piece successively
Etc. a series of applications.Wherein, the preparation of magnetoresistance effect is basis prepared by spin electric device, and figure is carried out on this basis
Change etching, can obtain various types of devices.The precision of magnetic multiplayer film thickness, directly determined into the factor such as film uniformity and impurity
The performance of prepared spin electric device is determined.
Additionally, what some characteristics that many novel spin-correlation effects are all based on magnetoresistance effect were produced, such as interface
Induction magnetic anisotropy, interface spin injection, spin and Dzyaloshinskii-Moriya
Interaction (DMI) effect etc., the mechanism for preferably grasping these effects can improve the heat endurance of self-spining device, work(
The performance indications of the aspects such as consumption, moreover it is possible to realize many novel functions.Therefore, the research to magnetoresistance effect has become certainly
Focus key issue in rotation electronic device research.In this context, what traditional thin magnetic film was prepared, and characterized and regulated and controled
Mode is gradually difficult to meet requirement of the magnetoresistance effect development to efficiency and precision.
In traditional magnetoresistance effect research, the preparation of magnetoresistance effect, regulation and control are mostly separately carried out with sign.Due to big
The control measures such as most thin magnetic film depositional modes and ion irradiation need to carry out in a vacuum, cause magnetic multilayer film structure to need
Continually to pass in and out high vacuum environment.This consumes the substantial amounts of time, while also easily sample surfaces are caused with pickup and oxidation；
Using the ex situ such as ion irradiation interface control methods, can only realize regulating and controlling the interface in the range of certain depth, it is impossible to
Carry out the regulation and control of specific interface.These all reduce the efficiency and precision of magnetoresistance effect research.
The content of the invention
(1) technical problem to be solved
For the problem mentioned in above-mentioned background introduction, the invention discloses a kind of magnetic multilayer film structure method of production,
Developed with realizing that magnetoresistance effect magnetic characteristic is customized, improve the precision and efficiency of magnetic multilayer film structure development.
(2) technical scheme
In order to achieve the above object, the invention discloses a kind of magnetic multilayer film structure method of production, the method is in vacuum
Film deposition equipment, magnetic characterization equipment and interface adjusting device are integrated with environment.It is comprised the following steps：
Step one：Magnetoresistance effect customizes preparation parameter and demarcates.Magnetic multilayer film structure is carried out under vacuum conditions
Thin film deposition, interface regulation and control are carried out using certain parameter, judge now whether magnetic is up to standard by magnetic characterization equipment.If magnetic
It is not up to standard, then thin film deposition and interface regulation and control parameter are adjusted, said process is repeated, until magnetic characterization result is up to standard, obtain
Calibrated thin film deposition and interface regulation and control parameter.
Step 2：Thin film deposition simultaneously carries out interface regulation and control as needed.According to the preparation parameter obtained in step one, carry out
Magnetoresistance effect thin film deposition, and interface regulation and control are carried out as needed, complete the magnetic multiplayer film preparation of a fixed structure.
Step 3：Interface regulating and controlling effect research.By magnetic characterization equipment, by by the magnetic multiplayer before and after the regulation and control of interface
The magnetism characteristic of film is contrasted, influence of the research interface regulation and control to magnetoresistance effect magnetism characteristic.
Step 4：Particular functional layer Effect study.First certain magnetoresistance effect knot is prepared by film deposition equipment
Structure layer, characterizes by magnetic characterization equipment to its magnetism characteristic, proceeds thin film deposition, increases particular functional layer, enters
Row magnetic characterization.Analysis contrast increases the change of magnetism characteristic before and after particular functional layer, and research particular functional layer is to magnetic multiplayer
The influence of film magnetic property.The particular functional layer includes：Coating, cushion and pinning layer.
Step 5：Magnetoresistance effect magnetic characteristic is customized to be developed.The conclusion that obtains according to step one to step 4 and to magnetic
Property multilayer film magnetic characteristic customization requirement, design magnetic multilayer film structure and prepare scheme, carry out thin film deposition and according to need
Carry out specific interface regulation and control.Magnetic characterization is carried out again and obtains its magnetism characteristic, verify whether its magnetic characteristic reaches customization and want
Ask, complete magnetic multilayer film structure development.
(3) beneficial effect
A kind of magnetic multilayer film structure method of production, develops mode and compares, due in high vacuum with traditional magnetic multilayer film
Under be integrated with magnetic multilayer film structure deposition, regulation and control and characterize, with advantages below：
(1) can realize that magnetoresistance effect magnetic characteristic customizes development.
(2) high vacuum is integrated, is capable of achieving the continuous, interactive, fast of magnetoresistance effect deposition, interface regulation and control and magnetic characterization
Speed operation, improves development efficiency；
(3) the whole development processes of are in high vacuum environment, it is to avoid the pickup of sample, water suction and aoxidize；
(4) can realize the regulation and control to specific interface in magnetic multilayer film structure.
Brief description of the drawings
Fig. 1 is a kind of magnetic multilayer film structure method of production flow chart of the invention, contains of the invention five big steps.
Fig. 2 is a kind of magnetic multilayer film structure method of production specific implementation structural representation of the invention.
Fig. 3 is that step one interface of the present invention regulates and controls parameter calibration flow chart, and vacuum interconnection hop is eliminated in figure.
Fig. 4 is that step 2 specific interface of the present invention regulates and controls microcosmic schematic diagram, and wherein Fig. 4 (a) is to show before target interface regulates and controls
It is intended to, Fig. 4 (b) is schematic diagram after target interface regulation and control, Fig. 4 (c) is to continue depositing subsequent film layer after target interface regulates and controls to illustrate
Figure.
Fig. 5 is that step 5 magnetic multilayer film structure of the present invention develops flow chart, and vacuum interconnection hop is eliminated in figure.
401 is sample substrate；
402 is deposition and atomic A；
403 is deposition and atomic B；
404 is deposition and atomic C.
Specific embodiment
With reference to the accompanying drawings, technical scheme is further illustrated.Accompanying drawing is signal and flow chart.It is directed to
Each functional layer and area size and the non-actual size of shape.The embodiment disclosed herein, its specific CONSTRUCTED SPECIFICATION and function are thin
Section is only the purpose for describing specific embodiment, therefore, it can implement the present invention in many selectable forms, and the present invention is not
The example embodiment for being limited only to herein propose is should be understood that, but fall within the scope of the present invention all should be covered
Change, equivalent and refill.
With reference to Fig. 2, Transmission system is interconnected by vacuum, the thin film deposition used during magnetoresistance effect is developed, interface are adjusted
Control, magnetic characterization and Sample Room are integrated in vacuum environment so that sample can be passed in vacuum environment between each functional areas
It is defeated.The equipment that the inventive method is applied is a kind of ultra-thin film preparation, Characterization on Interface and regulation and control integrated system, integrated system master
To be made up of multigroup many power magnetron sputtering apparatus, time resolution magneto-optical kerr measuring instrument in situ, multi-angle ion irradiation equipment.
Above-mentioned three groups of equipment is carried out by ultrahigh vacuum interconnect device integrated, magnetic multiplayer film preparation, Characterization on Interface, tune are carried out successively
Control；
Wherein, described ultrahigh vacuum interconnect device includes multiple vacuum chambers and multistage vacuum interconnection span line, for inciting somebody to action
All devices carry out integrated；
Wherein, described multigroup many power magnetron sputtering apparatus, concrete structure is：Multiple is integrated with single vacuum chamber
Sputtering target, is divided into multigroup, and every group of sputtering target is located on same swinging rotating disk, and every group respectively by independent direct current or radio frequency electrical
Source drives；Rotary elevating platform is provided with the vacuum cavity, sample is moved to the finger of multigroup sputtering target by rotary elevating platform
Positioning is put；Sample can be with uniform rotation simultaneously；
Wherein, described multi-angle ion irradiation equipment, employs the design of three-level differential extraction precisely poly- with ion beam
Jiao's design, concrete scheme is as follows：
Three-level differential extraction is designed：Ion irradiation apparatus cavity is divided into the first pumping cells i.e. ion source chamber, second
Pumping cells are magnet chamber, lens and deflecting plates region, and the 3rd pumping cells are that three pumpings of irradiation sample chamber are single
Unit, is separated between each pumping cells with the ultrahigh vacuum flange of different pore size, wherein the first pumping cells and the second pumping are single
Separated with the ultrahigh vacuum flange of the first aperture between unit, with the between the second pumping cells and the 3rd pumping cells
The ultrahigh vacuum flange of two apertures separates；
The accurate focusing design of ion beam：Ion gun, definition diaphragm and center are disposed with ion source chamber room fixed
Position plate, for being positioned the ion beam projected from ion gun, being focused on；In magnet chamber, lens and deflecting plates region according to
It is secondary to be provided with deflected ion beam magnet, lens and deflecting plates；
Wherein, described ultrahigh vacuum interconnect device, concrete structure includes：
Sample Room, the Sample Room is the transitional cavity that sample enters vacuum environment from air, is connected with multistage pump, is capable of achieving
It is not less than 10-6The vacuum of Pa；
Vacuum interconnects span line, and the connection Sample Room vacuum interconnection span line different with terminal device can be divided into main span line
With multi-branch transport section, main span line and multi-branch transport section intersection are provided with transition chamber thereof；Span line is interconnected in different vacuum
The slide valve of all-metal sealing is installed, the interconnection and isolation of different span lines are capable of achieving by controlling the switch of slide valve；
The sample transmission rod mechanical arm of retractable, mechanical arm tail end has sample carrier, for supporting sample；Mechanical arm is in main biography
Defeated section and connection equipment multi-branch transport section in respectively have one.
By above-mentioned integrated system, the customization development of magnetic multilayer film structure can be carried out, with reference to Fig. 1, have five big
Step.Vacuum interconnection transmission link is eliminated in described below：
Step one：Magnetoresistance effect customizes preparation parameter and demarcates.With reference to Fig. 3, magnetic multiplayer is carried out under vacuum conditions
The thin film deposition of membrane structure, interface regulation and control are carried out using certain parameter, judge now whether magnetic reaches by magnetic characterization equipment
Mark.If magnetic is not up to standard, change thin film deposition and interface regulate and control parameter used, and re-start thin film deposition, interface regulation and control
With magnetic characterization.Above step is repeated, until magnetic characterization is up to standard, calibrated interface regulation and control parameter is obtained.The parameter bag
Include regulation and control time, annealing temperature, ion irradiation intermediate ion energy and incident angle.
Step 2：Thin film deposition and specific interface regulate and control.With reference to Fig. 4, thin film deposition is carried out first, obtain such as Fig. 4 (a) institutes
The film layer structure for showing.Secondly according to regulation and control parameter in calibrated interface in upper step one, interface regulation and control are carried out to sample, obtain as
The film layer structure after regulation and control shown in Fig. 4 (b).Subsequent thin film deposition is carried out on this basis, can obtain the film shown in Fig. 4 (c)
Rotating fields.As can be seen that only lower interface receives regulation and control from Fig. 4 (c), and upper interface is not by the shadow of interface regulation and control
Ring, realize the control accurate to magnetoresistance effect deposition and specific interface.
Step 3：Interface regulating and controlling effect research.By magnetic characterization equipment, by the magnetic of magnetoresistance effect before and after the regulation and control of interface
Learn characteristic to be contrasted, influence of the research interface regulation and control to magnetoresistance effect magnetism characteristic.
Step 4：Particular functional layer Effect study.First certain magnetoresistance effect knot is deposited by film deposition equipment
Structure layer, characterizes by magnetic characterization equipment to its magnetism characteristic.Proceed thin film deposition, increase particular functional layer, enter
Row magnetic characterization.Analysis contrast increases the change of magnetism characteristic before and after particular functional layer, and research particular functional layer is to magnetic multiplayer
The influence of film magnetic property.The particular functional layer includes：Coating, cushion and pinning layer.
Step 5：Magnetoresistance effect magnetic characteristic is customized to be developed.According to the result of step one to step 4, boundary can be demarcated
Face regulates and controls parameter, carries out specific interface regulation and control, assay surface regulation and control and add a cover particular functional layer to magnetoresistance effect magnetism characteristic
Influence.With reference to Fig. 5, magnetic multilayer film structure is designed according to conclusions, carry out thin film deposition and specific interface regulation and control.Most
Afterwards, in the case where vacuum is not destroyed, the sample to being made carries out magnetic characterization, and whether checking magnetoresistance effect magnetic property is full
Foot is customized and required, completes magnetic multilayer film structure development.
Claims (2)
1. a kind of magnetic multilayer film structure method of production, is integrated with the deposition of magnetic multilayer film structure in vacuum environment, in real time,
Magnetic characterization in situ and interface regulate and control, and it has five big steps：
Step one：Magnetoresistance effect customizes preparation parameter and demarcates, and the film of magnetic multilayer film structure is carried out under vacuum conditions
Deposition, interface regulation and control are carried out using certain parameter, judge now whether magnetic is up to standard by magnetic characterization equipment, if magnetic does not reach
Mark, then adjust thin film deposition and interface regulation and control parameter, repeats said process, until magnetic characterization result is up to standard, is demarcated
Thin film deposition afterwards and interface regulation and control parameter；
Step 2：Thin film deposition simultaneously carries out interface regulation and control as needed, according to the preparation parameter obtained in step one, carries out magnetic
Multilayer film thin film deposition, and interface regulation and control are carried out as needed, complete the magnetic multiplayer film preparation of a fixed structure；
Step 3：Interface regulating and controlling effect research, by magnetic characterization equipment, by by the magnetoresistance effect before and after the regulation and control of interface
Magnetism characteristic is contrasted, influence of the research interface regulation and control to magnetoresistance effect magnetism characteristic；
Step 4：Particular functional layer Effect study, prepares certain magnetic multilayer film structure layer by film deposition equipment first,
Its magnetism characteristic is characterized by magnetic characterization equipment, proceeds thin film deposition, increase particular functional layer, carry out magnetic
Characterize, analysis contrast increases the change of magnetism characteristic before and after particular functional layer, and research particular functional layer is to magnetoresistance effect magnetics
The influence of property, the particular functional layer includes：Coating, cushion and pinning layer；
Step 5：Magnetoresistance effect magnetic characteristic is customized to be developed, the conclusion that obtains according to step one to step 4 and many to magnetic
The customization requirement of tunic magnetic characteristic, design magnetic multilayer film structure and preparation scheme, carry out thin film deposition and enter as needed
Row specific interface regulates and controls, then carries out magnetic characterization and obtain its magnetism characteristic, verifies whether its magnetic characteristic reaches customization and require, complete
Into magnetic multilayer film structure development.
2. a kind of magnetic multilayer film structure method of production according to claim 1, it is characterised in that：Collect under vacuum conditions
Thin film deposition, interface regulation and control and magnetic characterization needed for being developed into magnetic multilayer film structure；
The film deposition equipment includes：Physical deposition method and chemical deposition, such as magnetron sputtering, molecular beam epitaxy, from
Beamlet deposition, ald；The interface adjusting device includes：Ion irradiation, annealing；The magnetic characterization equipment includes：
Time resolution magneto-optical kerr measuring instrument, magneto-optical kerr measuring instrument, nuclear magnetic resonance, vibrating specimen magnetometer, alternating gradient magnetometer,
Superconducting quantum interference device (SQUID).
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| CN201611024304.7A CN106711324A (en) | 2016-11-18 | 2016-11-18 | Magnetic multilayer film structure development method |
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| CN201611024304.7A CN106711324A (en) | 2016-11-18 | 2016-11-18 | Magnetic multilayer film structure development method |
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Cited By (1)
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| CN110660425A (en) * | 2019-09-10 | 2020-01-07 | 北京航空航天大学 | Spin random access memory and method of use |
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Application publication date: 20170524 |