CN208337990U - 多层基板以及电子设备 - Google Patents

多层基板以及电子设备 Download PDF

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Publication number
CN208337990U
CN208337990U CN201690001330.5U CN201690001330U CN208337990U CN 208337990 U CN208337990 U CN 208337990U CN 201690001330 U CN201690001330 U CN 201690001330U CN 208337990 U CN208337990 U CN 208337990U
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China
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base plate
multilager base
section
external electrode
stacking direction
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CN201690001330.5U
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用水邦明
马场贵博
真下佳之
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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Abstract

本实用新型提供一种多层基板以及电子设备，能够抑制散热构件容易从基材脱落这一情况。本实用新型所涉及的多层基板的特征在于，具备：基材，具有在层叠方向的一侧设置的安装面；电子部件，内置于基材；和散热构件，贯通从电子部件的层叠方向的一侧的面至安装面之间的绝缘体层，并且未与电子部件的外部电极电连接，其中，该散热构件由具有比绝缘体层的材料的第1导热率高的第2导热率的材料构成，定义在散热构件中与层叠方向正交的第1剖面、以及位于比第1剖面更靠层叠方向的另一侧的位置且在散热构件中与层叠方向正交的第2剖面，从层叠方向观察时，存在第2剖面从第1剖面突出这样的第1剖面与第2剖面的组合。

Description

多层基板以及电子设备
技术领域
本实用新型涉及内置了电子部件的多层基板以及电子设备。
背景技术
作为以往的多层基板有关的发明，例如已知有专利文献1所记载的无线通信模块。图12是专利文献1所记载的无线通信模块500的剖面构造图。
无线通信模块500具备多层基板502以及主基板504。多层基板502 安装在主基板504上。多层基板502包括主体506、无源元件508以及散热板510。主体506是在上下方向上层叠多个电介质层而构成的。无源元件508被收纳在主体506内的空间。散热板510从下侧覆盖无源元件508，使得无源元件508不露出到外部。
在如以上那样的无线通信模块500中，散热板510相对于主基板504 的外部电极而通过焊料进行了接合。因此，无源元件508所产生的热量会经由散热板510而向主基板504传递。
因而，无线通信模块500具有散热板510易于从主体506脱落的问题。
在先技术文献
专利文献
专利文献1：日本特开2003-60523号公报
实用新型内容
实用新型所要解决的课题
因此，本实用新型的目的在于，提供一种能够抑制散热构件容易从基材脱落这一情况的多层基板以及电子设备。
用于解决课题的手段
本实用新型的一形态所涉及的多层基板的特征在于，具备：基材，在层叠方向上层叠多个绝缘体层而构成，其中，该基材具有在该层叠方向的一侧设置的安装面；电子部件，内置于所述基材；和第1散热构件，贯通从所述电子部件的所述层叠方向的一侧的面至所述安装面之间的所述绝缘体层，并且未与该电子部件的外部电极电连接，其中，该第1散热构件具有比所述绝缘体层的第1导热率高的第2导热率，定义在所述第1散热构件中与所述层叠方向正交的第1剖面、以及位于比该第1剖面更靠该层叠方向的另一侧的位置且在该第1散热构件中与该层叠方向正交的第2 剖面，从所述层叠方向观察时，存在所述第2剖面从所述第1剖面突出这样的该第1剖面与该第2剖面的组合。
本实用新型的一形态所涉及的电子设备具备母基板以及安装于该母基板的多层基板，其特征在于，所述多层基板具备：基材，在层叠方向上层叠多个绝缘体层而构成，其中，该基材具有在该层叠方向的一侧设置的安装面；电子部件，内置于所述基材；和第1散热构件，贯通从所述电子部件的所述层叠方向的一侧的面至所述安装面之间的所述绝缘体层，并且未与该电子部件的外部电极电连接，其中，该第1散热构件具有比所述绝缘体层的第1导热率高的第2导热率，所述第1散热构件与所述母基板直接相接，或者经由第2接合构件而与该母基板连接，其中，该第2接合构件具有比所述第1导热率高的第4导热率，定义在所述第1散热构件中与所述层叠方向正交的第1剖面、以及位于比该第1剖面更靠该层叠方向的另一侧的位置且在该第1散热构件中与该层叠方向正交的第2剖面，从所述层叠方向观察时，存在所述第2剖面从所述第1剖面突出这样的该第1 剖面与该第2剖面的组合。
实用新型的效果
根据本实用新型，能够抑制散热构件容易从基材脱落这一情况。
附图说明
图1是本实用新型的一实施方式所涉及的电子设备10的剖面构造图。
图2A是从上侧俯视观察散热构件50的图。
图2B是抽出了图1的电子设备10的散热构件50的剖面构造图。
图3是电子设备10的制造时的剖面构造图。
图4是电子设备10的制造时的剖面构造图。
图5是电子设备10的制造时的剖面构造图。
图6是第1变形例所涉及的电子设备10a的剖面构造图。
图7A是第2变形例所涉及的多层基板20b的剖面构造图。
图7B是第3变形例所涉及的多层基板20c的剖面构造图。
图8是第4变形例所涉及的多层基板20d的剖面构造图。
图9是第5变形例所涉及的多层基板20e的剖面构造图。
图10A是多层基板20f的散热构件50的与前后方向正交的剖面构造图。
图10B是多层基板20f的散热构件50的与左右方向正交的剖面构造图。
图11A是多层基板20f的A-A处的剖面构造图。
图11B是多层基板20f的B-B处的剖面构造图。
图11C是多层基板20f的C-C处的剖面构造图。
图12是专利文献1所记载的无线通信模块500的外观立体图。
具体实施方式
(实施方式)
<多层基板以及电子设备的结构>
以下，边参照附图边说明本实用新型的一实施方式所涉及的多层基板以及电子设备的结构。图1是本实用新型的一实施方式所涉及的电子设备 10的剖面构造图。图2A是从上侧俯视观察散热构件50的图。图2B是抽出了图1的电子设备10的散热构件50的剖面构造图。以下，将多层基板20的层叠方向定义为上下方向。将图1的左右方向定义为左右方向，将图1的纸面的垂直方向定义为前后方向。上下方向、左右方向以及前后方向彼此正交。
电子设备10例如是便携式电话、个人计算机、游戏机、可穿戴终端等。在图1中，仅图示设置在电子设备10内的模块，省略了电子设备10 的壳体、其他结构。如图1所示，电子设备10具备多层基板20、芯片部件60、70以及母基板100。
首先，说明多层基板20。多层基板20是从上侧观察时呈长方形状的板状的柔性基板。如图1所示，多层基板20具备基材22、外部电极24a～ 24e、26a、26b、布线导体层28a～28g、过孔导体v1～v9、半导体集成电路40以及散热构件50。另外，在外部电极24a～24e、26a、26b以外还设置有外部电极，但在图1中省略了外部电极24a～24e、26a、26b以外的外部电极。同样，在布线导体层28a～28g以外还设置有布线导体层，但在图1中省略了布线导体层28a～28g以外的布线导体层。同样，在过孔导体v1～v9以外还设置有过孔导体，但在图1中省略了过孔导体v1～ v9以外的过孔导体。
如图1所示，在从上侧观察时，基材22是呈长方形的可挠性的板状构件。在从上侧观察时，基材22的长边在左右方向上延伸，在从上侧观察时，基材22的短边在前后方向上延伸。基材22是绝缘体片22a～22e (多个绝缘体层的一例)从上侧向下侧按照该顺序层叠而构成的层叠体。基材22具有两个主面。以下，将基材22的上侧(层叠方向的另一侧的一例)的主面称为表面，将基材22的下侧(层叠方向的一侧的一例)的主面称为背面。基材22的背面是在多层基板20的安装时与母基板100对置的安装面。
在从上侧观察时，绝缘体片22a～22e呈长方形状，呈与基材22相同的形状。绝缘体片22a～22e是由包含聚酰亚胺、液晶聚合物等具有可挠性的热可塑性树脂的材料制作的绝缘体层。以下，将绝缘体片22a～22e 的上侧的主面称为表面，将绝缘体片22a～22e的下侧的主面称为背面。
外部电极24a～24e是长方形状的导体层，设置在绝缘体片22a的表面。外部电极24a～24e配置为从左侧向右侧按照该顺序排成一列。
外部电极26a、26b(第2外部电极的一例)是长方形状的导体层，设置在绝缘体片22e的背面(即，安装面)。外部电极26a配置在基材22 的左端附近，外部电极26b配置在基材22的右端附近。
在从上侧观察时，半导体集成电路40是呈长方形状的板状的电子部件，内置于基材22。更详细而言，半导体集成电路40包括主体42以及外部电极44a～44c。在从上侧观察时，主体42呈板状，该板状呈长方形状。以下，将主体42的上侧的主面称为表面，将主体42的下侧的面称为背面。
外部电极44a～44c(第1外部电极的一例)是长方形状的导体层，设置在主体42的表面。外部电极44a～44c配置为从左侧向右侧按照该顺序排成一列。另外，在半导体集成电路40还设置有外部电极44a～44c 以外的未图示的外部电极。不过，在主体42的背面未设置外部电极。
在绝缘体片22d，设置有在上下方向上贯通的长方形状的孔。在从上侧观察时，长方形状的孔的形状与主体42的形状大体一致。此外，主体 42的上下方向的厚度与绝缘体片22d的厚度大体一致。因此，半导体集成电路40被收纳在设置于绝缘体片22d的孔。由此，半导体集成电路40 设置在比基材22的表面更靠近背面。
如图2A所示，散热构件50是从上侧观察时呈长方形状的板状的构件。以下，将散热构件50的上侧的主面称为表面，将散热构件50的下侧的面称为背面。在图2A中，实线表示散热构件50的表面的外缘，虚线表示散热构件50的背面的外缘。散热构件50呈四棱锥台形状，具有随着从上侧前往下侧而与上下方向正交的剖面变小的形状。
以下，更详细地说明散热构件50的形状。如图2B所示，在散热构件50中，如以下那样定义剖面S1(第1剖面的一例)以及剖面S2(第2 剖面)。剖面S1是与上下方向正交的剖面。剖面S2是位于比剖面S1更靠上侧(层叠方向的另一侧的一例)的位置且与上下方向正交的剖面。剖面S1、S2在上下方向上的位置是任意的，在图2B中表示了其一例。不过，需要使剖面S2位于比剖面S1更靠上侧的位置。
在散热构件50中，从上侧观察时，存在剖面S2从剖面S1突出这样的剖面S1、S2的组合。存在剖面S1、S2的组合是指，剖面S2从剖面 S1突出这样的剖面S1、S2的组合至少存在1组即可，也可以存在剖面 S2不从剖面S1突出这样的剖面S1、S2的组合。
不过，由于散热构件50呈四棱锥台形状，因此从上侧观察时，剖面 S2从剖面S1突出的关系在所有剖面S1、S2的组合中成立。换而言之，不存在剖面S2不从剖面S1突出这样的剖面S1、S2的组合。而且，剖面 S2的面积比剖面S1的面积大的关系在所有剖面S1、S2的组合中成立。换而言之，不存在剖面S2的面积成为剖面S1的面积以下这样的剖面S1、S2的组合。
此外，散热构件50由具有比绝缘体片22a～22e的材料的导热率E1 (第1导热率的一例)高的导热率E2(第2导热率的一例)的材料构成。在本实施方式中，散热构件50的材料是由铜等材料构成的金属板。不过，散热构件50也可以是由金、铝、银等金属、碳材料等材料构成的板。另外，优选散热构件50不是贯通绝缘体片22e的导体与设置于绝缘体片22e 的导体层等的组合，而是由单一材料构成的单一构件。
散热构件50贯通从半导体集成电路40的背面至基材22的背面之间的绝缘体片22e，并且未与半导体集成电路40的外部电极44a～44c电连接。在本实施方式中，散热构件50设置于绝缘体片22e。此外，在绝缘体片22e，设置有在上下方向上贯通的长方形状的孔。设置于绝缘体片22e 的长方形状的孔的形状在从上侧观察时与散热构件50大体一致。此外，散热构件50的上下方向的厚度与绝缘体片22e的厚度大体一致。因此，散热构件50被收纳在设置于绝缘体片22e的孔。由此，散热构件50的表面与半导体集成电路40的背面直接相接。不过，半导体集成电路40的背面与散热构件50的表面，也可以经由由具有比导热率E1高的导热率E3 (第3导热率的一例)的材料构成的散热润滑脂、导体膏等(第1接合构件的一例)来连接。
此外，由于在主体42的背面未设置外部电极，因此散热构件50的表面未与主体42的外部电极接触。由此，散热构件50保持在浮置状态。浮置状态是指导体未与电源电位等连接的状态。不过，散热构件50无需一定保持在浮置状态，例如也可以与接地电位连接。此外，从半导体集成电路40的散热性的观点出发，优选散热构件50的表面的面积在半导体集成电路40的背面的面积的50％以上。这样，散热构件50比较大，因此是不包含用于连接一般的层间的导体彼此的过孔导体等的概念。
布线导体层28a～28g(布线导体层的一例)是设置在基材22内的线状的导体层。更详细而言，布线导体层28a、28b设置在绝缘体片22b的表面，从左侧向右侧按照该顺序排列。布线导体层28c～28e设置在绝缘体片22c的表面，从左侧向右侧按照该顺序排列。布线导体层28c在左右方向上延伸。在从上侧观察时，布线导体层28c的右端与外部电极44a 重叠。在从上侧观察时，布线导体层28c的左端与外部电极26a重叠。布线导体层28d在前后方向上延伸。布线导体层28e在左右方向上延伸。在从上侧观察时，布线导体层28e的左端与外部电极44c重叠。在从上侧观察时，布线导体层28e的右端与外部电极26b重叠。布线导体层28f设置在绝缘体片22d的表面，配置在比半导体集成电路40更靠左侧。在从上侧观察时，布线导体层28f与布线导体层28c的左端重叠。布线导体层 28g设置在绝缘体片22d的表面，配置在比半导体集成电路40更靠右侧。在从上侧观察时，布线导体层28g与布线导体层28e的右端重叠。
过孔导体v1、v2分别在上下方向上贯通绝缘体片22c，从左侧向右侧按照该顺序排列。过孔导体v1、v2呈随着从上侧前往下侧而变粗的形状。过孔导体v1连接布线导体层28c的左端与布线导体层28f。过孔导体v2连接布线导体层28c的右端与外部电极44a。
过孔导体v6、v8分别在上下方向上贯通绝缘体片22d、22e，配置在比半导体集成电路40更靠左侧。过孔导体v6呈随着从上侧前往下侧而直径变粗的形状。过孔导体v8呈随着从上侧前往下侧而变细的形状。过孔导体v6、v8彼此连接，从而构成了一串过孔导体，连接布线导体层28f 与外部电极26a。由此，过孔导体v1、v2、v6、v8(层间连接导体的一例) 以及布线导体层28c、28f构成了连接外部电极44a与外部电极26a的连接部。在本实施方式中，连接部在从外部电极44a向上侧延伸后，向左侧 (与层叠方向正交的正交方向的一例)延伸，进而向下侧延伸，从而与外部电极26a连接。
过孔导体v4、v5分别在上下方向上贯通绝缘体片22c，从左侧向右侧按照该顺序排列。过孔导体v4、v5呈随着从上侧前往下侧而变粗的形状。过孔导体v4连接布线导体层28e的左端与外部电极44c。过孔导体 v5连接布线导体层28e的右端与布线导体层28g。
过孔导体v7、v9分别在上下方向上贯通绝缘体片22d、22e，配置在比半导体集成电路40更靠右侧。过孔导体v7呈随着从上侧前往下侧而直径变粗的形状。过孔导体v9呈随着从上侧前往下侧而变细的形状。过孔导体v7、v9彼此连接，从而构成了一串过孔导体，连接布线导体层28g 与外部电极26b。由此，过孔导体v4、v5、v7、v9以及布线导体层28e、28g构成了连接外部电极44c与外部电极26b的连接部。在本实施方式中，连接部在从外部电极44c向上侧延伸后，向右侧(与层叠方向正交的正交方向的一例)延伸，进而向下侧延伸，从而与外部电极26b连接。
过孔导体v3在上下方向上贯通绝缘体片22c，呈随着从上侧前往下侧而变粗的形状。过孔导体v3连接布线导体层28d与外部电极44b。另外，外部电极44b还经由过孔导体v3以及未图示的过孔导体以及布线导体层而与设置于基材22的背面的未图示的外部电极连接。
布线导体层28a～28g以及外部电极24a～24e、26a、26b的材料例如是铜。不过，布线导体层28a～28g以及外部电极24a～24e、26a、26b的表面被实施了镀锌。此外，过孔导体v1～v9是固化有以铜、锡、银等金属为主要成分的导电性膏的导体。
下面，说明芯片部件60、70。芯片部件60、70是安装在多层基板20 的表面上的电子部件，例如是电容器、电感器等。不过，芯片部件60、 70也可以是半导体集成电路。芯片部件60通过焊料而安装于外部电极 24a、24b。芯片部件70通过焊料而安装于外部电极24c～24e。多层基板 20以及芯片部件60、70构成了部件安装基板。另外，根据用途，也可以不配置芯片部件60、70。即，也可以构成不对部件进行表面安装的多层基板20。
下面，对母基板100进行说明。母基板100是便携式电话等的主板，是大张的电路基板。母基板100基本上是不具有可挠性的硬质基板，但也可以具有可挠性。母基板100包括主体102以及外部电极104a～104c。主体102是从上侧观察时呈长方形状的板状的多层基板。在主体102的内部以及表面形成有电气电路。以下，将主体102的上侧的主面称为表面，将主体102的下侧的主面称为背面。
外部电极104a～104c是长方形状的导体层，设置在主体102的表面。外部电极104a～104c配置为从左侧向右侧按照该顺序排成一列。外部电极104b(第3外部电极的一例)比外部电极104a、104c大，从上侧观察时具有与散热构件50的背面大体一致的形状。另外，在母基板100，还设置有外部电极104a～104c以外的未图示的外部电极。
多层基板20安装于母基板100。更详细而言，相对于外部电极104a、104c而分别通过焊料110a、110c安装了外部电极26a、26b。此外，散热构件50经由焊料110b(第2接合构件的一例)而与外部电极104b连接。焊料110b的材料具有比导热率E1高的导热率E4(第4导热率的一例)。由此，散热构件50的热量经由焊料110b而向外部电极104b传递。也可以取代焊料110b而使用散热润滑脂、导体膏。此外，散热构件50的背面与外部电极104b也可以直接相接。
<电子设备的制造方法>
以下，边参照附图边说明电子设备10的制造方法。图3至图5是电子设备10的制造时的剖面构造图。以下，以制作一个多层基板20的情况为例进行说明，但实际上，大张的绝缘体片被层叠以及剪切，从而同时制作多个多层基板20。
首先，准备由液晶聚合物制作成的绝缘体片22a～22e。进而，在绝缘体片22d、22e，例如通过冲头等进行冲孔来形成在上下方向上贯通的孔h1、h2。
其次，在绝缘体片22a～22e的一个主面的整个面形成铜箔。具体而言，在绝缘体片22a～22d的表面贴附铜箔。在绝缘体片22e的背面贴附铜箔。进而，对绝缘体片22a～22e的铜箔的表面例如实施用于防锈的镀锌，并进行平滑化。另外，也可以使用铜箔以外的金属箔。
接着，通过对绝缘体片22a的表面上形成的铜箔进行图案化，从而如图3所示，在绝缘体片22a的表面上形成外部电极24a～24e、未图示的外部电极以及布线导体层。具体而言，在绝缘体片22a的表面的铜箔上，印刷与图3所示的外部电极24a～24e、未图示的外部电极以及布线导体层相同形状的抗蚀剂。然后，通过对铜箔实施蚀刻处理，从而除去未被抗蚀剂覆盖的部分的铜箔。而后，喷涂洗涤液(抗蚀剂除去液)来除去抗蚀剂。由此，在绝缘体片22a的表面上通过光刻工序形成如图3所示的外部电极24a～24e、未图示的外部电极以及布线导体层。
其次，如图3所示，在绝缘体片22b～22d的表面上分别形成布线导体层28a～28g。此外，如图3所示，在绝缘体片22e的背面上形成外部电极26a、26b以及未图示的外部电极。另外，布线导体层28a～28g、外部电极26a、26b以及未图示的外部电极的形成工序，与外部电极24a～24e、未图示的外部电极以及布线导体层的形成工序相同，因此省略说明。另外，在存在未图示的电容器导体层等导体层的情况下，通过与外部电极 24a～24e、未图示的外部电极以及布线导体层的形成工序同样的形成工序来形成该导体层。
接着，通过向绝缘体片22a～22e的形成过孔导体v1～v9以及未图示的过孔导体的位置照射激光束来形成贯通孔。然后，向贯通孔填充以铜、锡、银等金属为主要成分的导电性膏。
其次，在绝缘体片22d的孔h1内配置半导体集成电路40。进而，在绝缘体片22e的孔h2内配置散热构件50。此时，相对于孔h2而将散热构件50从上侧插入。
接着，通过热压接而形成多层基板20。具体而言，如图3所示，层叠了绝缘体片22a～22e之后，对绝缘体片22a～22e实施加压处理以及加热处理(即，热压接)。加压处理通过从上下方向夹持绝缘体片22a～22e 来进行。通过对绝缘体片22a～22e实施加压处理以及加热处理，从而绝缘体片22a～22e软化，并且贯通孔内的导电性膏固化。由此，绝缘体片22a～22e被接合，并且形成过孔导体v1～v9。进而，通过加压处理以及加热处理而绝缘体片22a～22e的热可塑性树脂流动，由此孔h1、h2的内周面与半导体集成电路40以及散热构件50的形状匹配地进行密接。通过以上的工序，如图4所示，完成多层基板20。
其次，如图5所示，通过焊料将芯片部件60、70安装到多层基板20。由此，完成部件安装基板。
最后，如图1所示，通过焊料将多层基板20安装到母基板100。然后，将母基板100搭载至壳体，由此完成电子设备10。
<效果>
根据本实施方式所涉及的多层基板20以及电子设备10，能够获得高的散热性。更详细而言，散热构件50贯通从半导体集成电路40的背面至基材22的背面之间的绝缘体片22e。由此，在将多层基板20安装到母基板100时，能够使散热构件50的背面与母基板100直接相接，或者，使散热构件50的背面与母基板100经由由具有比导热率E1高的导热率的材料构成的散热润滑脂而连接。其结果，热量经由散热构件50而从半导体集成电路40向母基板100直线地传递。即，使得在半导体集成电路40 中产生的热量以短的路径向母基板100传递。如以上，根据多层基板20 以及电子设备10，能够获得高的散热性。
特别是，在多层基板20以及电子设备10中，半导体集成电路40设置在比基材22的表面更靠近背面。因此，使得在半导体集成电路40中产生的热量以更短的路径向母基板100传递。因此，根据多层基板20以及电子设备10，能够获得更高的散热性。
此外，根据多层基板20以及电子设备10，能够抑制散热构件50容易从基材22脱落这一情况。以下，作为多层基板20的比较例所涉及的多层基板，列举包含并非四棱锥台形状而呈长方体状的散热构件的多层基板为例来进行说明。比较例所涉及的多层基板的其他结构与多层基板20相同。因此，关于比较例所涉及的多层基板的参照符号，沿用多层基板20的参照符号。
在比较例所涉及的多层基板中，散热构件50贯通从半导体集成电路 40的背面至基材22的背面之间的绝缘体片22e。进而，散热构件50的剖面形状是长方形状。因此，通过散热构件50的侧面与绝缘体片22e的孔的内周面密接，从而散热构件50被保持在基材22。因此，若对比较例所涉及的多层基板施加了强的冲击等，则散热构件50有可能从基材22脱落。
因此，在多层基板20以及电子设备10中，从上侧观察时，存在剖面 S2从剖面S1突出这样的剖面S1、S2的组合。由此使得：即便散热构件 50想要从基材22向下侧脱落，剖面S2也会被绝缘体片22e的孔的内周面卡住。其结果，可抑制散热构件50从基材22脱落。
此外，根据多层基板20以及电子设备10，能够更有效地抑制散热构件50容易从基材22脱落这一情况。由于散热构件50呈四棱锥台形状，因此在从上侧观察时，剖面S2从剖面S1突出的关系在所有剖面S1、S2 的组合中成立。由此，散热构件50变得一点也不能向下侧移动。其结果，根据多层基板20以及电子设备10，能够更有效地抑制散热构件50容易从基材22脱落这一情况。
此外，根据多层基板20以及电子设备10，能够更有效地抑制散热构件50容易从基材22脱落这一情况。由于散热构件50呈四棱锥台形状，因此剖面S2的面积比剖面S1的面积大的关系在所有剖面S1、S2的组合中成立。由此，剖面S2从剖面S1突出的量变大。其结果，根据多层基板20以及电子设备10，能够更有效地抑制散热构件50容易从基材22脱落这一情况。
此外，根据多层基板20以及电子设备10，通过以下的理由而能够获得更高的散热性。更详细而言，散热构件50经由焊料110b而与外部电极 104b连接。由此，可抑制在散热构件50与外部电极104b之间形成间隙。其结果，使得从散热构件50向外部电极104b效率良好地传递热量。
此外，根据多层基板20以及电子设备10，通过以下的理由而能够获得更高的散热性。更详细而言，若散热构件50经由散热润滑脂等而与半导体集成电路40连接，则可抑制在散热构件50与半导体集成电路40之间形成间隙。其结果，使得从半导体集成电路40向散热构件50效率良好地传递热量。
此外，根据多层基板20以及电子设备10，可降低在外部电极44a、 44c与外部电极26a、26b之间流动的信号、电源电流等受到热量的影响。以下，列举从外部电极44a至外部电极26a的连接为例来进行说明。过孔导体v1、v2、v6、v8以及布线导体层28c、28f构成了连接外部电极44a 与外部电极26a的连接部。连接部在从外部电极44a向上侧延伸后，向左侧延伸，进而向下侧延伸，从而与外部电极26a连接。由此，使得连接部避开散热构件50。其结果，可降低在外部电极44a与外部电极26a之间流动的信号、电源电流等受到热量的影响。
此外，根据电子设备10，散热构件50的侧面是平滑的倾斜面。因此，绝缘体片22e易于与散热构件50的侧面密接。其结果，可更有效地抑制散热构件50从基材22脱落。
(第1变形例)
以下，边参照附图边说明第1变形例所涉及的多层基板20a以及电子设备10a。图6是第1变形例所涉及的电子设备10a的剖面构造图。
多层基板20a在还包含散热构件50a、50b、布线导体层28h～28j、过孔导体v10、v11以及绝缘体片22f这一点上与多层基板20不同。以下，以该不同点为中心来说明多层基板20a。
基材22通过从上侧向下侧按照该顺序层叠绝缘体片22a～22f而构成。布线导体层28h设置在绝缘体片22f的表面。在从上侧观察时，布线导体层28h与布线导体层28a的左端重叠，并与过孔导体v8的下端连接。过孔导体v10在上下方向上贯通绝缘体片22f，连接布线导体层28h与外部电极26a。
布线导体层28i设置在绝缘体片22f的表面。在从上侧观察时，布线导体层28j与布线导体层28e的右端重叠，并与过孔导体v9的下端连接。过孔导体v11在上下方向上贯通绝缘体片22f，连接布线导体层28j与外部电极26b。
散热构件50a、50b贯通从半导体集成电路40的背面至基材22的背面之间的绝缘体片22e、22f，并且未与半导体集成电路40的外部电极 44a～44c电连接。散热构件50a、50b从左侧向右侧按照该顺序隔开间隔来配置。布线导体层28i在左右方向(正交方向的一例)上设置在散热构件50a(第1散热构件的一例)与散热构件50b(第2散热构件的一例) 之间。散热构件50a、50b的形状与散热构件50同样为四棱锥形状。不过，散热构件50a、50b比散热构件50细。散热构件50a、50b通过例如由铜构成的板状构件或块状构件而构成。另外，散热构件50a、50b的其他结构与散热构件50相同，因此省略说明。
在如以上那样的多层基板20a以及电子设备10a中，也能发挥与多层基板20以及电子设备10相同的作用效果。
此外，在多层基板20a以及电子设备10a中，多层基板20a的设计的自由度变高。更详细而言，在多层基板20a的背面附近，布线导体层的密度变高。因此，在多层基板20a中，散热构件50分离成两个散热构件50a、 50b。由此，能够设置布线导体层的空间变宽，因此多层基板20a的设计的自由度变高。
(第2变形例)
以下，边参照附图边说明第2变形例所涉及的多层基板20b。图7A 是第2变形例所涉及的多层基板20b的剖面构造图。
多层基板20b在散热构件50的形状上与多层基板20不同。以下，以该不同点为中心来说明多层基板20b。
在多层基板20b中，散热构件50的侧面具有阶梯。更详细而言，在从上侧观察时，散热构件50的上半部分比散热构件50的下半部分稍大，并且从散热构件50的下半部分向前后方向以及左右方向突出。
在如以上那样的多层基板20b中，也能发挥与多层基板20相同的作用效果。
此外，散热构件50在侧面具有阶梯。由此，在散热构件50由金属板、金属块制作成的情况下，能够容易地对散热构件50进行加工。
(第3变形例)
以下，边参照附图边说明第3变形例所涉及的多层基板20c。图7B 是第3变形例所涉及的多层基板20c的剖面构造图。
在多层基板20c中，散热构件50跨绝缘体片22e、22f来设置。更详细而言，多层基板20c的散热构件50如与多层基板20b的散热构件50 同样地在侧面具有阶梯。不过，在多层基板20c中，散热构件50的上半部分被收纳在设置于绝缘体片22e的孔，散热构件50的下半部分被收纳在设置于绝缘体片22f的孔。
在如以上那样的多层基板20c中，也能发挥与多层基板20相同的作用效果。此外，在多层基板20c中，与多层基板20b不同，无需在绝缘体片22e的孔的内周面设置阶梯。因此，能够比多层基板20b更容易地制作多层基板20c。
(第4变形例)
以下，边参照附图边说明第4变形例所涉及的多层基板20d。图8是第4变形例所涉及的多层基板20d的剖面构造图。
多层基板20d在散热构件50的形状上与多层基板20不同。以下，以该不同点为中心来说明多层基板20d。
在多层基板20d中，在散热构件50的上下方向的中央，散热构件50 的与上下方向正交的剖面变大。并且，随着靠近散热构件50的表面以及背面而剖面变小。即便是这样形状的散热构件50，在从上侧观察时也存在剖面S2从剖面S1突出这样的剖面S1、S2的组合。因此，多层基板20d 也能发挥与多层基板20相同的作用效果。
(第5变形例)
以下，边参照附图边说明第5变形例所涉及的多层基板20e。图9是第5变形例所涉及的多层基板20e的剖面构造图。
多层基板20e在散热构件50的形状上与多层基板20不同。以下，以该不同点为中心来说明多层基板20e。
在多层基板20e中，在散热构件50的上下方向的中央，散热构件50 的与上下方向正交的剖面最小。并且，随着靠近散热构件50的表面以及背面而剖面变大。即便是这样形状的散热构件50，在从上侧观察时也存在剖面S2从剖面S1突出这样的剖面S1、S2的组合。因此，多层基板20e 也能发挥与多层基板20相同的作用效果。
(第6变形例)
以下，边参照附图边说明第6变形例所涉及的多层基板20f。图10A 是多层基板20f的散热构件50的与前后方向正交的剖面构造图。图10B 是多层基板20f的散热构件50的与左右方向正交的剖面构造图。图11A 是多层基板20f的A-A处的剖面构造图。图11B是多层基板20f的B-B 处的剖面构造图。图11C是多层基板20f的C-C处的剖面构造图。
在多层基板20f的散热构件50中，与上下方向正交的剖面(以下仅称为剖面)的大小以及形状固定，与散热构件50的上下方向的位置无关。更详细而言，散热构件50的剖面如图11A～图11C所示呈椭圆形状。不过，在散热构件50的背面，散热构件50的剖面如图11A所示呈具有与左右方向平行的长轴的椭圆。并且，散热构件50的椭圆形状的剖面随着从下侧前往上侧而逆时针旋转。而且，在散热构件50的表面，如图11C 所示呈具有与前后方向平行的长轴的椭圆。由此，在从上侧观察时，剖面 S2从剖面S1突出的关系在所有剖面S1、S2的组合中成立。其结果，多层基板20f能够起到与多层基板20相同的作用效果。
如以上那样，若存在剖面S2从剖面S1突出这样的剖面S1、S2的组合，则如图11A至图11C所示，在所有剖面S1、S2的组合中剖面S1与剖面S2可以相等，虽未图示，但在所有剖面S1、S2的组合中剖面S1也可以比剖面S2大。
(其他实施方式)
本实用新型所涉及的多层基板以及电子设备并不限于所述多层基板20、20a～20f以及电子设备10、10a，能够在其主旨的范围内进行变更。
另外，也可以将多层基板20、20a～20f以及电子设备10、10a的结构任意地进行组合。
另外，也可以对散热构件50、50a、50b的背面实施镀覆。此外，还可以通过在基材22的背面设置外部电极来覆盖散热构件50、50a、50b 的背面。若散热构件50、50a、50b的背面被外部电极覆盖，则可更有效地抑制散热构件50、50a、50b从基材22脱落。如以上的镀膜、外部电极，作为对散热构件50、50a、50b与外部电极104b的连接进行中介的接合构件而发挥作用。
产业上的可利用性
如以上那样，本实用新型在多层基板以及电子设备中是有用的，更详细而言，在能够抑制散热构件容易从基材脱落这一点上是优异的。
符号说明
10、10a：电子设备；
20、20a～20f：多层基板；
22：基材；
22a～22e：绝缘体片；
24a～24e、26a、26b、44a～44c：外部电极；
28a～28j：布线导体层；
40：半导体集成电路；
42：主体；
50、50a、50b：散热构件；
60、70：芯片部件；
100：母基板；
102：主体；
104a～104c：外部电极；
110a～110c：焊料；
S1、S2：剖面；
v1～v11：过孔导体。

Claims (20)

1.一种多层基板，其特征在于，具备：
基材，在层叠方向上层叠多个绝缘体层而构成，其中，该基材具有在该层叠方向的一侧设置的安装面；
电子部件，内置于所述基材；和
第1散热构件，贯通从所述电子部件的所述层叠方向的一侧的面至所述安装面之间的所述绝缘体层，并且未与该电子部件的外部电极电连接，其中，该第1散热构件具有比所述绝缘体层的第1导热率高的第2导热率，
定义在所述第1散热构件中与所述层叠方向正交的第1剖面、以及位于比该第1剖面更靠该层叠方向的另一侧的位置且在该第1散热构件中与该层叠方向正交的第2剖面，
从所述层叠方向观察时，存在所述第2剖面从所述第1剖面突出这样的该第1剖面与该第2剖面的组合。
2.根据权利要求1所述的多层基板，其特征在于，
在所述电子部件的所述层叠方向的一侧的面，未设置外部电极。
3.根据权利要求1或2所述的多层基板，其特征在于，
在所述电子部件的所述层叠方向的另一侧的面，设置有第1外部电极。
4.根据权利要求3所述的多层基板，其特征在于，
所述多层基板还具备：
第2外部电极，设置于所述安装面；和
连接部，连接所述第1外部电极和所述第2外部电极、且由层间连接导体以及布线导体层构成。
5.根据权利要求4所述的多层基板，其特征在于，
所述连接部设置于所述基材。
6.根据权利要求4或5所述的多层基板，其特征在于，
所述连接部在从所述第1外部电极向所述层叠方向的另一侧延伸后，向与该层叠方向正交的正交方向延伸，进而向该层叠方向的一侧延伸，从而与所述第2外部电极连接。
7.根据权利要求1或2所述的多层基板，其特征在于，
从所述层叠方向观察时，所述第2剖面从所述第1剖面突出的关系在所有的所述第1剖面与所述第2剖面的组合中成立。
8.根据权利要求1或2所述的多层基板，其特征在于，
所述第2剖面比所述第1剖面大的关系在所有的所述第1剖面与所述第2剖面的组合中成立。
9.根据权利要求1或2所述的多层基板，其特征在于，
所述电子部件在所述基材中设置在比所述层叠方向的另一侧的面更靠近所述安装面。
10.根据权利要求1或2所述的多层基板，其特征在于，
所述第1散热构件是金属板或金属块。
11.根据权利要求1或2所述的多层基板，其特征在于，
所述多层基板具备：第2散热构件，贯通从所述电子部件的所述层叠方向的一侧的面至所述安装面之间的所述绝缘体层，并且未与该电子部件的外部电极电连接，其中，该第2散热构件具有比所述绝缘体层的导热率高的导热率，
所述第1散热构件与所述第2散热构件在与所述层叠方向正交的正交方向上隔开间隔来配置。
12.根据权利要求11所述的多层基板，其特征在于，
所述多层基板还具备：布线导体层，在所述正交方向上设置在所述第1散热构件与所述第2散热构件之间。
13.根据权利要求1或2所述的多层基板，其特征在于，
所述第1散热构件经由第1接合构件而与所述电子部件连接，其中，该第1接合构件具有比所述第1导热率高的第3导热率。
14.根据权利要求1或2所述的多层基板，其特征在于，
所述多个绝缘体层是通过热可塑性树脂制作的绝缘体层。
15.一种电子设备，具备母基板以及安装于该母基板的多层基板，其特征在于，
所述多层基板具备：
基材，在层叠方向上层叠多个绝缘体层而构成，其中，该基材具有在该层叠方向的一侧设置的安装面；
电子部件，内置于所述基材；和
第1散热构件，贯通从所述电子部件的所述层叠方向的一侧的面至所述安装面之间的所述绝缘体层，并且未与该电子部件的外部电极电连接，其中，该第1散热构件具有比所述绝缘体层的第1导热率高的第2导热率，
所述第1散热构件与所述母基板直接相接，或者经由第2接合构件而与该母基板连接，其中，该第2接合构件具有比所述第1导热率高的第4导热率，
定义在所述第1散热构件中与所述层叠方向正交的第1剖面、以及位于比该第1剖面更靠该层叠方向的另一侧的位置且在该第1散热构件中与该层叠方向正交的第2剖面，
从所述层叠方向观察时，存在所述第2剖面从所述第1剖面突出这样的该第1剖面与该第2剖面的组合。
16.根据权利要求15所述的电子设备，其特征在于，
在所述电子部件的所述层叠方向的另一侧的面，设置有第1外部电极。
17.根据权利要求16所述的电子设备，其特征在于，
所述多层基板还具备：
第2外部电极，设置于所述安装面；和
连接部，连接所述第1外部电极和所述第2外部电极、且由层间连接导体以及布线导体层构成。
18.根据权利要求17所述的电子设备，其特征在于，
所述连接部设置于所述基材。
19.根据权利要求15至18的任一项所述的电子设备，其特征在于，
所述母基板具备第3外部电极，
所述第1散热构件与所述第3外部电极直接相接，或者经由所述第2接合构件而与该第3外部电极连接。
20.根据权利要求15至18的任一项所述的电子设备，其特征在于，
所述多个绝缘体层是通过热可塑性树脂制作的绝缘体层。
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