CN204130521U - 一种封装导线材料结构 - Google Patents

一种封装导线材料结构 Download PDF

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CN204130521U
CN204130521U CN201420355102.0U CN201420355102U CN204130521U CN 204130521 U CN204130521 U CN 204130521U CN 201420355102 U CN201420355102 U CN 201420355102U CN 204130521 U CN204130521 U CN 204130521U
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tungsten
gold
microns
conductive wire
wire material
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刘伯彦
周斌
钟其龙
王晓靁
刘崇志
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XIAMEN CRYSTAL EMBELLISH PHOTOELECTRIC Co Ltd
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XIAMEN CRYSTAL EMBELLISH PHOTOELECTRIC Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45184—Tungsten (W) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Powder Metallurgy (AREA)

Abstract

本实用新型公开一种封装导线材料结构，由中间线芯和表面镀层组成，中间线芯为钨丝，表面镀层为金。加工方法是：模压，将钨粉挤压成一整根棒；预烧结，将棒放入氢气烧结炉中，高温使金属颗粒凝聚，致密性可到达约60%～70%；在垂熔炉中完全烧结，使钨棒的致密性达到约85％至95％，棒的内部钨晶体开始形成；断电，冷却；挤锻压加工，采用锤锻机捶打，直到直径达到6350到2540微米；再通过拉丝模拉拔，使其直径达到12.7微米，制成钨丝；钨丝镀金：镀金厚度约为2微米，制成具有内钨外金结构的封装导线材料。本实用新型避开了使用铜所衍生的问题，并减少金的使用量，降低成本。

Description

一种封装导线材料结构
技术领域
本实用新型涉及半导体及LED后段封装技术，特别与一种封装导线材料的结构有关。
背景技术
集成电路(Integrated Circuit；IC)封装内部接合方式，可分为打线接合、卷带式自动接合与覆晶接合，其中，打线接合由于制程成熟、成本低、布线弹性高，是目前应用最广的接合技术，约占所有封装产品90%。
打线接合使用的导线，分为金线、铜线与铝线，目前以金线为主流，原因在于金具备稳定性高、质软、延展性佳等物理特性优势，用于IC封装打线接合时，其良率、生产效率及线径微细化等表现，皆相当不错。然而，自1999年来，国际金价即一路走高，甚至在2009年金价突破每盎司1,000美元价位。金价高涨，使半导体封测业者与IC设计业者不得不正视金线高昂的成本，而积极投入其他金属打线技术研发，并计划导入量产。而铜打线技术发源于1980年代，除成本考虑外，铜的导电性、导热性及强韧度皆较金为佳，因此自2001年起，即大量应用于大功率组件及离散组件等线径粗、电负载量大的半导体产品。但受制于铜的硬度高于金，铜打线应用在IC封装时，由于电路复杂、结构脆弱、接脚细且密，导致打线技术难度大增、研发与认证投资不易回收。
众所皆知，铜线非常容易氧化，包括贮存及运输均必须特别留意隔绝空气，在打线接合过程更需要极严格的惰性气体保护；更严重的是由于铜线的易氧化及腐蚀特性，将会导致打线接合产品的可靠度偏低，另一方面因为铜线的强度与硬度较高，使其焊线作业参数较窄、速度较慢及良率较差，尤其在最近相当热门的迭球打线接合封装，铜线遭遇极大困难，迫使封装厂不得不采用“金铜混打”的变通方案，可是仍然不能完全克服迭球在金/铜界面所出现的质量不佳问题。
因应上述现存技术的缺点，本发明人对封装导线材料进行改进，本案由此产生。
实用新型内容
本实用新型的目的在于提供一种封装导线材料结构，以避开了使用铜所衍生的问题，并减少金的使用量，降低成本。
为了达成上述目的，本实用新型的技术方案是：
一种封装导线材料结构，由中间线芯和表面镀层组成，中间线芯为钨丝，表面镀层为金，由此形成内钨外金的结构。
其中，中间线芯的钨丝直径为12.7微米，表面镀层的厚度为2微米。
采用上述方案后，本实用新型使用钨线镀金的方式来解决现有技术中的缺点，利用钨的耐高温、高韧性及延展性，高抗氧化能力（在常压下，要达到400～500℃，才会产生氧化反应，但反应的生成物WO3会形成一表面保护膜，阻止氧化深入内部），低电子迁移率，在高温下加工，可以制造出比金线更细之钨丝，但由于其高电阻值问题，故佐以表面镀金以减少电阻，提高电子传输的能力，并且钨丝镀金后，其将更为耐高温，抗腐蚀，热膨胀系数低。由于本实用新型主要使用钨丝为封装打线接合材料，大大减少金的使用量，也避开了使用铜所衍生的问题，达到降低成本，并改善现存技术的缺点。
附图说明
图1是本封装导线材料的结构示意图；
图2是本封装导线材料的加工方法流程图。
具体实施方式
如图1所示，本实用新型揭示的一种封装导线材料结构，由中间线芯1和表面镀层2组成，中间线芯1为钨丝，钨丝直径优选为12.7微米，表面镀层2为金，表面镀层的厚度优选为2微米，由此形成内钨外金的结构。
如图2所示，本实用新型揭示的一种封装导线材料是按如下步骤加工而成。
第一步，模压。
将固定重量的钨粉放进不锈钢模具中，挤压成一整根棒。
第二步，预烧结。
将第一步的这根易碎的棒放置在难熔金属器皿中，并放入氢气烧结炉中，高温1200～1600℃使金属颗粒不断地凝聚在一起；这一过程中，致密性可到达约60%～70%，粒度不会增加。
第三步，完全烧结。
将钨棒的两端垂直夹持在垂熔炉的上下夹头肩，采用低电压、高电流供电(电压9-12V，电流8000-12000A)，使钨坯条自身升温。通过增大电流提高烧结温度，烧结温度最高达3000℃左右，而产生的热量会使钨棒的致密性达到约85％至95％，与此同时，棒的内部钨晶体开始形成；断电，通入循环水对上、下夹头进行冷却。
第四步，挤锻压加工。
第三步的钨棒是比较结实的，但在常温下还是比较脆的。本实用新型通过提高它的温度到1200℃到1500℃，钨棒可以变得更有韧性。在这一温度下，采用锤锻机捶打钨棒，钨棒被挤压。锤锻机是通过一种模具每分钟10000次有规律地捶打钨棒来减少钨棒的直径的装置。通常，每捶打一次钨棒的直径会减少12%。通过挤锻压，使晶体结构拉成变成纤维结构。但要使成品的强度和柔韧性得到改善，钨棒必须不断地被重新加热到1800～2500℃，且捶打要一直持续到钨棒的直径达到6350 到 2540微米。
第五步，拉拔。
第四步挤锻压过的钨棒直径偏粗，接下来要通过拉丝模拉拔使其直径变得更细。丝被通过硬质合金拉丝模或金刚石拉丝模润滑和拉拔，使其直径达到12.7微米，制成钨丝。
第六步，钨丝镀金。
对第五步已完成的钨丝进行镀金，镀金厚度约为2微米，制成具有内钨外金结构的封装导线材料。

Claims (2)

1.一种封装导线材料结构，其特征在于：由中间线芯和表面镀层组成，中间线芯为钨丝，表面镀层为金，由此形成内钨外金的结构。
2.如权利要求1所述的一种封装导线材料结构，其特征在于：中间线芯的钨丝直径为12.7微米，表面镀层的厚度为2微米。
CN201420355102.0U 2014-06-30 2014-06-30 一种封装导线材料结构 Expired - Fee Related CN204130521U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134645B (zh) * 2014-06-30 2017-06-27 厦门润晶光电集团有限公司 一种封装导线材料结构及其加工方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104134645B (zh) * 2014-06-30 2017-06-27 厦门润晶光电集团有限公司 一种封装导线材料结构及其加工方法

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