CN207637785U - 新型高频微波大功率限幅器焊接组装结构 - Google Patents

新型高频微波大功率限幅器焊接组装结构 Download PDF

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CN207637785U
CN207637785U CN201721890165.6U CN201721890165U CN207637785U CN 207637785 U CN207637785 U CN 207637785U CN 201721890165 U CN201721890165 U CN 201721890165U CN 207637785 U CN207637785 U CN 207637785U
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lead
copper substrate
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tungsten copper
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魏跃雄
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Chengdu Wick Microwave Technology Co Ltd
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Chengdu Wick Microwave Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H01L2224/85805—Soldering or alloying involving forming a eutectic alloy at the bonding interface

Abstract

本实用新型公开了一种新型高频微波大功率限幅器焊接组装结构，包括钨铜基片、芯片和引线，所述钨铜基片作为基板，钨铜基片与芯片通过焊片焊接，所述引线呈M型，引线的中部底面与芯片的中部顶面焊接，所述钨铜基片、芯片和引线采用一体化共晶焊接形成通用模块。本实用新型采用将引线、芯片和钨铜基片一体化共晶焊接形成通用模块，解决了焊线形变问题，提高了产品的通过功率，并能适应不同的基板和盒体材料，提高了产品的通用性和产品的可靠性。

Description

新型高频微波大功率限幅器焊接组装结构
技术领域
本实用新型属于微波焊接技术领域，具体涉及一种新型高频微波大功率限幅器焊接组装结构。
背景技术
为了实现PIN二极管芯片器件与基片的膨胀系数良好匹配，需要选择不同的基板材料，选取钨铜合金做基板材料成本高，加工工艺复杂；选取铜做基板材料，热膨胀系统不好匹配，容易影响产品的可靠性；选取金丝或硅铝丝做基板材料，在与芯片焊接时需要采用超声波焊接工艺，焊接成本较高；同时芯片与基片的焊接大多采用合金焊片或锡膏共晶焊接工艺，根据不同的产品，需要匹配不同的盒体后再进行焊接，这种制作方式使得产品的生产效率和可靠性降低，不利于企业长期发展。
发明内容
本实用新型所要解决的技术问题便是针对上述现有技术的不足，提供一种新型高频微波大功率限幅器焊接组装结构，该焊接组装结构能形成通用模块结构，提高了生产效率及产品的可靠性。
本实用新型所采用的技术方案是：一种新型高频微波大功率限幅器焊接组装结构，包括钨铜基片、芯片和引线，所述钨铜基片作为基板，钨铜基片与芯片通过焊片焊接，所述引线呈M型，引线的中部底面与芯片的中部顶面焊接，所述钨铜基片、芯片和引线采用一体化共晶焊接形成通用模块。
作为优选，所述钨铜基片与芯片的中心线位于同一竖直线上。
作为优选，所述引线采用铜线或银线制成。
作为优选，还包括盒体，所述钨铜基片底部与盒体的安装槽顶面通过焊片焊接，引线的两端与盒体的线路表面焊接。
作为优选，还包括印制线路板，所述钨铜基片底部与印制线路板的安装槽顶面通过焊片焊接，引线的两端与印制线路板的线路表面焊接。
本实用新型的有益效果在于：
(1)通过将引线、芯片和钨铜基片一体化共晶焊接形成通用模块，解决了焊线形变问题，提高了产品的通过功率，并能适应不同的基板和盒体材料，提高了产品的通用性和产品的可靠性；
(2)操作简单、不需要使用超声波焊线设备，大大节约了生产的成本。
附图说明
图1为本实用新型的结构示意图；
图2为本实用新型实施例2的结构示意图；
图3为本实用新型实施例3的结构示意图。
图中：1、钨铜基片；2、芯片；3、引线；4、焊片；5、盒体；6、印制线路板。
具体实施方式
下面将结合附图及具体实施例对本实用新型作进一步详细说明。
实施例1
如图1所示，本实施例提供的新型高频微波大功率限幅器焊接组装结构包括钨铜基片1、芯片2和引线3，所述钨铜基片1作为基板，钨铜基片1与芯片2通过焊片4焊接，焊接后钨铜基片1与芯片2的中心线位于同一竖直线上，所述引线3采用铜线或银线制成，且引线3呈M型，引线3的中部底面与芯片2的中部顶面焊接，所述钨铜基片1、芯片2和引线3采用一体化共晶焊接形成通用模块。
实施例2
如图2所示，本实施例在实施例1的基础上还包括盒体5，所述钨铜基片1底部与盒体5的安装槽顶面通过焊片4焊接，引线3的两端与盒体5的线路表面焊接。
实施例3
如图3所示，本实施例在实施例1的基础上还包括印制线路板6，所述钨铜基片1底部与印制线路板6的安装槽顶面通过焊片4焊接，引线3的两端与印制线路板6的线路表面焊接。
本实用新型先采用铜线或银线制成引线3，然后再将引线3、芯片2和钨铜基片1采用一体化共晶焊接形成通用模块，最后将通用模块与盒体5或印制线路板6一体化焊接。
以上所述仅是本实用新型优选的实施方式，但本实用新型的保护范围并不局限于此，任何基于本实用新型所提供的技术方案和发明构思进行的改造和替换都应涵盖在本实用新型的保护范围内。

Claims (5)

1.一种新型高频微波大功率限幅器焊接组装结构，其特征在于：包括钨铜基片(1)、芯片(2)和引线(3)，所述钨铜基片(1)作为基板，钨铜基片(1)与芯片(2)通过焊片(4)焊接，所述引线(3)呈M型，引线(3)的中部底面与芯片(2)的中部顶面焊接，所述钨铜基片(1)、芯片(2)和引线(3)采用一体化共晶焊接形成通用模块。
2.根据权利要求1所述的新型高频微波大功率限幅器焊接组装结构，其特征在于：所述钨铜基片(1)与芯片(2)的中心线位于同一竖直线上。
3.根据权利要求1所述的新型高频微波大功率限幅器焊接组装结构，其特征在于：所述引线(3)采用铜线或银线制成。
4.根据权利要求1所述的新型高频微波大功率限幅器焊接组装结构，其特征在于：还包括盒体(5)，所述钨铜基片(1)底部与盒体(5)的安装槽顶面通过焊片(4)焊接，引线(3)的两端与盒体(5)的线路表面焊接。
5.根据权利要求1所述的新型高频微波大功率限幅器焊接组装结构，其特征在于：还包括印制线路板(6)，所述钨铜基片(1)底部与印制线路板(6)的安装槽顶面通过焊片(4)焊接，引线(3)的两端与印制线路板(6)的线路表面焊接。
CN201721890165.6U 2017-12-29 2017-12-29 新型高频微波大功率限幅器焊接组装结构 Active CN207637785U (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110011016A (zh) * 2019-05-08 2019-07-12 合肥博元电子科技有限公司 一种防损耗微波限幅器
CN114083169A (zh) * 2021-12-13 2022-02-25 上海无线电设备研究所 射频同轴转微带的软连接工艺方法及工装
CN110011016B (zh) * 2019-05-08 2024-05-14 合肥博元电子科技有限公司 一种防损耗微波限幅器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110011016A (zh) * 2019-05-08 2019-07-12 合肥博元电子科技有限公司 一种防损耗微波限幅器
CN110011016B (zh) * 2019-05-08 2024-05-14 合肥博元电子科技有限公司 一种防损耗微波限幅器
CN114083169A (zh) * 2021-12-13 2022-02-25 上海无线电设备研究所 射频同轴转微带的软连接工艺方法及工装

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