CN203850340U - LED structure - Google Patents

LED structure Download PDF

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Publication number
CN203850340U
CN203850340U CN201420223119.0U CN201420223119U CN203850340U CN 203850340 U CN203850340 U CN 203850340U CN 201420223119 U CN201420223119 U CN 201420223119U CN 203850340 U CN203850340 U CN 203850340U
Authority
CN
China
Prior art keywords
substrate
led
type electrode
led structure
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420223119.0U
Other languages
Chinese (zh)
Inventor
林朝晖
邱新旺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
QUANZHOU JINTAIYANG LIGHTING TECHNOLOGY Co Ltd
Original Assignee
QUANZHOU JINTAIYANG LIGHTING TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by QUANZHOU JINTAIYANG LIGHTING TECHNOLOGY Co Ltd filed Critical QUANZHOU JINTAIYANG LIGHTING TECHNOLOGY Co Ltd
Priority to CN201420223119.0U priority Critical patent/CN203850340U/en
Application granted granted Critical
Publication of CN203850340U publication Critical patent/CN203850340U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

The utility model discloses an LED structure. The LED structure includes a substrate and at least one LED chip; one surface of the substrate is provided with a circuit layer and a graphene layer; and the LED chips are arranged on the substrate and electrically connected with the circuit layer. According to the LED structure of the utility model, the graphene layer is arranged on the substrate of the LED structure, so that the heat dissipation performance of grapheme can be well utilized, and therefore, the LED structure can perform heat dissipation greatly; and at the same time, a glass substrate can be adopted as the substrate of the LED structure of the utility model, so that a ceramic substrate or metal substrate which is used at present can be replaced, and therefore, an LED light source can emit light in a large angle, and light emitted by the LED light source can be fully utilized.

Description

A kind of LED structure
Technical field
The utility model relates to LED field, relates in particular to a kind of LED structure.
Background technology
Existing LED lamp bar, because the power density of LED structure is very high, this just needs the designer of LED structure devices and producer to be optimized meter to cooling system at aspects such as structure and materials.
Along with the exploitation gradually of high-power LED chip, also be developed for effectively discharging the hot technology that LED chip produces thereupon, in order more to improve the radiating efficiency of LED chip, existing is generally by strengthening or accelerating substrate and wiring board and realize LED chip and better dispel the heat, so often make the volume and weight of LED increase, therefore its cost also strengthens.
If the heat radiation of LED chip cannot normally realize, as a kind of LED chip of semiconductor device, because heat radiation wavelength changes, thereby the emission efficiency that produces yellowing phenomenon or light can reduce, and while at high temperature operation, the life-span of LED chip can shorten, thereby the radiator structure that the heat that LED chip is produced is effectively discharged improved, and is the core of encapsulating structure and technique.
Summary of the invention
In order to solve the problems of the prior art, the purpose of this utility model is to provide a kind of LED structure, and its heat dispersion can be good, simple in structure.
For achieving the above object, the utility model by the following technical solutions: a kind of LED structure, comprising: substrate and at least one LEDs chip, the one side of described substrate is provided with line layer and graphene layer, described LED chip is located on substrate and with line layer and is electrically connected.
Preferably, on the another side of described substrate, be also provided with graphene layer.
Preferably, described substrate is glass substrate.
Preferably, the top of described LED chip is provided with N-type electrode and P type electrode, and described N-type electrode and P type electrode are electrically connected with described line layer by gold thread respectively.
Preferably, the bottom of described LED chip is provided with N-type electrode and P type electrode, and described N-type electrode and P type electrode are electrically connected with described line layer by scolding tin respectively.
Preferably, the top of described LED chip is provided with P type electrode, and bottom is provided with N-type electrode, and described N-type electrode is electrically connected with described line layer by scolding tin, and described P type electrode is electrically connected with described line layer by gold thread.
The utility model adopts above technical scheme: by graphene layer being set at the substrate of LED structure, well utilized the heat dispersion of Graphene, LED structure can well be dispelled the heat; Meanwhile, the substrate in the utility model can adopt glass substrate, has substituted the ceramic substrate of current use, makes LED light source can wide-angle luminous, and the light sending can be fully utilized.
Brief description of the drawings
Below in conjunction with accompanying drawing, the utility model is described in further detail:
Fig. 1 is the planar structure schematic diagram of the utility model LED structure embodiment mono-;
Fig. 2 is the blast structural representation of Fig. 1;
Fig. 3 is the broken section enlarged diagram of the utility model LED structure embodiment mono-;
Fig. 4 is the blast structural representation of the utility model LED structure embodiment bis-;
Fig. 5 is the broken section enlarged diagram of the utility model LED structure embodiment tri-;
Fig. 6 is the broken section enlarged diagram of the utility model LED structure embodiment tetra-.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
The utility model is specifically as follows in manufacturing process: first, be carved with substrate surface sputter one deck graphene layer of line layer, then graphene layer is carried out to laser ablation, the graphene layer that covers line layer is isolated by the principle of not conducting of wiring board both positive and negative polarity, to avoid the line short of line layer, also can more accurately fully be coated with graphene layer at the logicalnot circuit layer region of substrate, therefore can well utilize graphene layer to take away timely the heat that circuit produces, help LED structure and better dispel the heat.
Embodiment mono-:
As depicted in figs. 1 and 2, LED structure described in the utility model, it comprises: substrate 1 and LED chip 2, the one side of described substrate 1 is provided with line layer 11 and graphene layer 12, described graphene layer 12 is located at logicalnot circuit layer region, described LED chip 2 is located in the one side of substrate 1 and is electrically connected with line layer 11, and described substrate 1 is glass substrate.Glass substrate can make LED packaging body omnibearing luminous.
As shown in Figure 3, the top of described LED chip 2 is provided with N-type electrode 21 and P type electrode 22, and described N-type electrode 21 and P type electrode 22 are electrically connected with described line layer 11 by gold thread 3 respectively.
Embodiment bis-:
As shown in Figure 4, different from embodiment mono-, in the present embodiment, the another side of the substrate 1 of LED structure is also provided with graphene layer 13.Two sides at substrate 1 in the present embodiment is provided with graphene layer simultaneously, has further promoted heat dispersion, has solved the difficult problem of dispelling the heat in current LED industry.
Embodiment tri-:
As shown in Figure 5, different from embodiment mono-, in the present embodiment, the bottom of described LED chip 2 is provided with N-type electrode 21 and P type electrode 22, and described N-type electrode 21 and P type electrode 22 are electrically connected with described line layer 11 by scolding tin 4 respectively.The present embodiment is in conjunction with inverted structure
LED structure, the heat that LED chip is produced better more directly distributes by substrate, has better heat dispersion.
Embodiment tetra-:
As shown in Figure 6, different from embodiment mono-, in the present embodiment, the bottom of described LED chip 2 is provided with N-type electrode 21, top is provided with P type electrode 22, and described N-type electrode 21 is electrically connected with described line layer 11 by scolding tin 5, and described P type electrode 22 is electrically connected with described line layer 11 by gold thread 6.
Substrate in the utility model can adopt glass substrate, has substituted ceramic substrate or the metal substrate of current use, has realized the omnibearing luminous of LED encapsulating structure, has improved the light efficiency of LED structure; Glass wiring board has certain heat-sinking capability in addition, has extended to a certain extent the useful life of LED.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any amendments of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.

Claims (6)

1. a LED structure, is characterized in that, comprising: substrate and at least one LEDs chip, and the one side of described substrate is provided with line layer and graphene layer, and described LED chip is located on substrate and with line layer and is electrically connected.
2. LED structure according to claim 1, is characterized in that: on the another side of described substrate, be also provided with graphene layer.
3. LED structure according to claim 1, is characterized in that: described substrate is glass substrate.
4. LED structure according to claim 1, is characterized in that: the top of described LED chip is provided with N-type electrode and P type electrode, and described N-type electrode is connected with described line layer by gold thread respectively with P type electrode.
5. LED structure according to claim 1, is characterized in that: the bottom of described LED chip is provided with N-type electrode and P type electrode, and described N-type electrode and P type electrode are electrically connected with described line layer by scolding tin respectively.
6. LED structure according to claim 1, it is characterized in that: the top of described LED chip is provided with P type electrode, bottom is provided with N-type electrode, and described N-type electrode is electrically connected with described line layer by scolding tin, and described P type electrode is electrically connected with described line layer by gold thread.
CN201420223119.0U 2014-05-04 2014-05-04 LED structure Expired - Fee Related CN203850340U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420223119.0U CN203850340U (en) 2014-05-04 2014-05-04 LED structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420223119.0U CN203850340U (en) 2014-05-04 2014-05-04 LED structure

Publications (1)

Publication Number Publication Date
CN203850340U true CN203850340U (en) 2014-09-24

Family

ID=51563320

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420223119.0U Expired - Fee Related CN203850340U (en) 2014-05-04 2014-05-04 LED structure

Country Status (1)

Country Link
CN (1) CN203850340U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394026A (en) * 2016-05-17 2017-11-24 湖南国盛石墨科技有限公司 A kind of LED with graphene heat-conducting layer
CN107910423A (en) * 2017-11-08 2018-04-13 铜陵市宏达家电有限责任公司 A kind of high-color development LED quartz wafer, quartz wafer stent and crystal filament and preparation method thereof
CN108281539A (en) * 2018-01-18 2018-07-13 深圳市光脉电子有限公司 A kind of flexible LED light structure and production method based on graphene material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107394026A (en) * 2016-05-17 2017-11-24 湖南国盛石墨科技有限公司 A kind of LED with graphene heat-conducting layer
CN107910423A (en) * 2017-11-08 2018-04-13 铜陵市宏达家电有限责任公司 A kind of high-color development LED quartz wafer, quartz wafer stent and crystal filament and preparation method thereof
CN108281539A (en) * 2018-01-18 2018-07-13 深圳市光脉电子有限公司 A kind of flexible LED light structure and production method based on graphene material

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140924

Termination date: 20200504